Semiconductor Components Industries, LLC, 2012
February, 2012 Rev. 13
1Publication Order Number:
MJD47/D
MJD47, NJVMJD47T4G,
MJD50
High Voltage Power
Transistors
DPAK For Surface Mount Applications
Designed for line operated audio output amplifier, switchmode supply
drivers and other switching applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Electrically Similar to Popular TIP47, and TIP50
250 and 400 V (Min) VCEO(sus)
1 A Rated Collector Current
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These are PbFree Packages*
MAXIMUM RATINGS
Rating Symbol Max Unit
CollectorEmitter Voltage
MJD47, NJVMJD47T4G
MJD50
VCEO 250
400
Vdc
CollectorBase Voltage
MJD47, NJVMJD47T4G
MJD50
VCB 350
500
Vdc
EmitterBase Voltage VEB 5 Vdc
Collector Current
Continuous
Peak
IC1
2
Adc
Base Current IB0.6 Adc
Total Power Dissipation
@ TC = 25C
Derate above 25C
PD15
0.12
W
W/C
Total Power Dissipation (Note 1)
@ TA = 25C
Derate above 25C
PD1.56
0.0125
W
W/C
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to + 150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
NPN SILICON POWER
TRANSISTORS
1 AMPERE
250, 400 VOLTS, 15 WATTS
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
Jxx = Device Code
xx = 47 or 50
G=PbFree Package
AYWW
JxxG
http://onsemi.com
Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MJD47G 369C
(PbFree)
75 Units/Rail
MJD47T4G 369C
(PbFree)
2,500/Tape & Reel
NJVMJD47T4G 369C
(PbFree)
2,500/Tape & Reel
MJD50G 369C
(PbFree)
75 Units/Rail
MJD50T4G 369C
(PbFree)
2,500/Tape & Reel
MJD47, NJVMJD47T4G, MJD50
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance JunctiontoCase RqJC 8.33 C/W
Thermal Resistance JunctiontoAmbient (Note 2) RqJA 80 C/W
Lead Temperature for Soldering Purpose TL260 C
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Sustaining Voltage (Note 3)
MJD47, NJVMJD47T4G
(IC = 30 mAdc, IB = 0) MJD50
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
250
400
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0) MJD47, NJVMJD47T4G
(VCE = 300 Vdc, IB = 0) MJD50
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ICEO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
0.2
0.2
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 350 Vdc, VBE = 0) MJD47, NJVMJD47T4G
(VCE = 500 Vdc, VBE = 0) MJD50
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ICES
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
0.1
0.1
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
IEBO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1 Adc, VCE = 10 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
hFE
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
30
10
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
150
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCE(sat)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BaseEmitter On Voltage
(IC = 1 Adc, VCE = 10 Vdc)
ÎÎÎÎ
ÎÎÎÎ
VBE(on)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1.5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain — Bandwidth Product
(IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
fT
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
10
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SmallSignal Current Gain
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
hfe
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
25
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
MJD47, NJVMJD47T4G, MJD50
http://onsemi.com
3
25
25
Figure 1. Power Derating
T, TEMPERATURE (C)
050 75 100 125 150
20
15
10
5
PD, POWER DISSIPATION (WATTS)
Figure 2. Switching Time Equivalent Circuit
APPROX
+11 V
RB
-4 V
t1
SCOPE
VCC RC
51
RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
2.5
0
2
1.5
1
0.5
TATC
TC
DUTY CYCLE 2%
APPROX -9 V
t1 7 ns
10 < t2 < 500 ms
t3 < 15 ns
Vin 0
Cjd << Ceb
Vin
t2
t3
APPROX
+11 V
Vin
TURN-ON PULSE
TA (SURFACE MOUNT)
VEB(off)
TURN-OFF PULSE
TYPICAL CHARACTERISTICS
0.02
IC, COLLECTOR CURRENT (AMPS)
1
0.8
V, VOLTAGE (VOLTS)
1.4
1.2
0.4
0
0.6
0.2
VBE(sat) @ IC/IB = 5
VBE(on) @ VCE = 4 V
VCE(sat) @ IC/IB = 5
0.02
IC, COLLECTOR CURRENT (AMPS)
20.06 0.2 2
40
10
100
hFE, DC CURRENT GAIN
VCE = 10 V
TJ = 150C
60
0.1 0.6
25C
-55C
20
0.04 0.4 1
200
4
6
Figure 3. DC Current Gain
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
r(t), TRANSIENT THERMAL
RqJC(t) = r(t) RqJC
RqJC = 8.33C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
RESISTANCE (NORMALIZED)
Figure 4. “On” Voltages
0.7
Figure 5. Thermal Response
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
0.06 0.2 20.1 0.6
0.04 0.4 1
0.2
SINGLE PULSE
D = 0.5
0.05
TJ = 25C
0.1
0.02
0.01
MJD47, NJVMJD47T4G, MJD50
http://onsemi.com
4
IC, COLLECTOR CURRENT (AMP)
5
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.005 500
1
0.2
0.05
0.02
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ 25C
WIRE BOND LIMIT
20 20010
TC 25C
100ms
1ms
dc
0.01
0.1
0.5
2
5
Figure 6. Active Region Safe Operating Area
10050 300
CURVES APPLY BELOW
RATED VCEO MJD50
MJD47
500ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.02 0.2 20.1
0.05 0.5 1
5
IC, COLLECTOR CURRENT (AMPS)
TJ = 25C
VCC = 200 V
IC/IB = 5
t, TIME (s)
2
1
0.5
0.2
0.1
0.05
Figure 7. TurnOn Time Figure 8. Turn-Off Time
IC, COLLECTOR CURRENT (AMPS)
0.01
t, TIME (s)
1
0.5
0.1
0.05
0.02
0.02 0.2 20.1
0.05 0.5 1
tr
td
ts
tf
TJ = 25C
VCC = 200 V
IC/IB = 5
0.2
MJD47, NJVMJD47T4G, MJD50
http://onsemi.com
5
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE D
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
b
D
E
b3
L3
L4
b2
eM
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
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MJD47/D
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