MJD47G - ON Semiconductor - Datasheet.Directory

 Semiconductor Components Industries, LLC, 2012

February, 2012 − Rev. 13

1Publication Order Number:

MJD47/D

MJD47, NJVMJD47T4G,

MJD50

High Voltage Power

Transistors

DPAK For Surface Mount Applications

Designed for line operated audio output amplifier, switchmode supply

drivers and other switching applications.

Features

Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

Electrically Similar to Popular TIP47, and TIP50

250 and 400 V (Min) − VCEO(sus)

1 A Rated Collector Current

Epoxy Meets UL 94 V−0 @ 0.125 in

ESD Ratings:

Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

These are Pb−Free Packages*

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector−Emitter Voltage

MJD47, NJVMJD47T4G

MJD50

VCEO 250

400

Vdc

Collector−Base Voltage

MJD47, NJVMJD47T4G

MJD50

VCB 350

500

Vdc

Emitter−Base Voltage VEB 5 Vdc

Collector Current

Continuous

Peak

IC1

Adc

Base Current IB0.6 Adc

Total Power Dissipation

@ TC = 25C

Derate above 25C

PD15

0.12

W/C

Total Power Dissipation (Note 1)

@ TA = 25C

Derate above 25C

PD1.56

0.0125

W/C

Operating and Storage Junction

Temperature Range

TJ, Tstg −65 to + 150 C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

NPN SILICON POWER

TRANSISTORS

1 AMPERE

250, 400 VOLTS, 15 WATTS

DPAK

CASE 369C

STYLE 1

MARKING DIAGRAM

A = Assembly Location

Y = Year

WW = Work Week

Jxx = Device Code

xx = 47 or 50

G=Pb−Free Package

AYWW

JxxG

http://onsemi.com

Device Package Shipping†

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MJD47G 369C

(Pb−Free)

75 Units/Rail

MJD47T4G 369C

(Pb−Free)

2,500/Tape & Reel

NJVMJD47T4G 369C

(Pb−Free)

2,500/Tape & Reel

MJD50G 369C

(Pb−Free)

75 Units/Rail

MJD50T4G 369C

(Pb−Free)

2,500/Tape & Reel

MJD47, NJVMJD47T4G, MJD50

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance Junction−to−Case RqJC 8.33 C/W

Thermal Resistance Junction−to−Ambient (Note 2) RqJA 80 C/W

Lead Temperature for Soldering Purpose TL260 C

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 3)

MJD47, NJVMJD47T4G

(IC = 30 mAdc, IB = 0) MJD50

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

250

400

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0) MJD47, NJVMJD47T4G

(VCE = 300 Vdc, IB = 0) MJD50

ÎÎÎÎ

ICEO

ÎÎÎÎ

−

ÎÎÎÎ

0.2

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 350 Vdc, VBE = 0) MJD47, NJVMJD47T4G

(VCE = 500 Vdc, VBE = 0) MJD50

ÎÎÎÎ

ICES

ÎÎÎÎ

−

ÎÎÎÎ

0.1

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.3 Adc, VCE = 10 Vdc)

(IC = 1 Adc, VCE = 10 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

150

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 1 Adc, VCE = 10 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

−

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain — Bandwidth Product

(IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz)

ÎÎÎÎ

−

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

−

ÎÎÎ

−

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

MJD47, NJVMJD47T4G, MJD50

http://onsemi.com

Figure 1. Power Derating

T, TEMPERATURE (C)

050 75 100 125 150

PD, POWER DISSIPATION (WATTS)

Figure 2. Switching Time Equivalent Circuit

APPROX

+11 V

-4 V

SCOPE

VCC RC

RB and RC VARIED TO OBTAIN

DESIRED CURRENT LEVELS.

2.5

1.5

0.5

TATC

DUTY CYCLE  2%

APPROX -9 V

t1  7 ns

10 < t2 < 500 ms

t3 < 15 ns

Vin 0

Cjd << Ceb

Vin

APPROX

+11 V

Vin

TURN-ON PULSE

TA (SURFACE MOUNT)

VEB(off)

TURN-OFF PULSE

TYPICAL CHARACTERISTICS

0.02

IC, COLLECTOR CURRENT (AMPS)

0.8

V, VOLTAGE (VOLTS)

1.4

1.2

0.4

0.6

0.2

VBE(sat) @ IC/IB = 5

VBE(on) @ VCE = 4 V

VCE(sat) @ IC/IB = 5

0.02

IC, COLLECTOR CURRENT (AMPS)

20.06 0.2 2

100

hFE, DC CURRENT GAIN

VCE = 10 V

TJ = 150C

0.1 0.6

25C

-55C

0.04 0.4 1

200

Figure 3. DC Current Gain

t, TIME (ms)

0.01

1 k

0.3

0.2

0.07

r(t), TRANSIENT THERMAL

RqJC(t) = r(t) RqJC

RqJC = 8.33C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.01

RESISTANCE (NORMALIZED)

Figure 4. “On” Voltages

0.7

Figure 5. Thermal Response

0.5

0.1

0.05

0.03

0.02

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.06 0.2 20.1 0.6

0.04 0.4 1

0.2

SINGLE PULSE

D = 0.5

0.05

TJ = 25C

0.1

0.02

0.01

MJD47, NJVMJD47T4G, MJD50

http://onsemi.com

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.005 500

0.2

0.05

0.02

SECOND BREAKDOWN LIMIT

THERMAL LIMIT @ 25C

WIRE BOND LIMIT

20 20010

TC  25C

100ms

1ms

0.01

0.1

0.5

Figure 6. Active Region Safe Operating Area

10050 300

CURVES APPLY BELOW

RATED VCEO MJD50

MJD47

500ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in

Figure 5. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

0.02 0.2 20.1

0.05 0.5 1

IC, COLLECTOR CURRENT (AMPS)

TJ = 25C

VCC = 200 V

IC/IB = 5

t, TIME (s)

0.5

0.2

0.1

0.05

Figure 7. Turn−On Time Figure 8. Turn-Off Time

IC, COLLECTOR CURRENT (AMPS)

0.01

t, TIME (s)

0.5

0.1

0.05

0.02

0.02 0.2 20.1

0.05 0.5 1

TJ = 25C

VCC = 200 V

IC/IB = 5

0.2

MJD47, NJVMJD47T4G, MJD50

http://onsemi.com

PACKAGE DIMENSIONS

DPAK

CASE 369C

ISSUE D

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

5.80

0.228

2.58

0.101

1.6

0.063

6.20

0.244

3.0

0.118

6.172

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.030 0.045 0.76 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

12 3

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.108 REF 2.74 REF

L2 0.020 BSC 0.51 BSC

DETAIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

MJD47/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative