2N6038G - ON Semiconductor L.L.C.

September, 2008 − Rev. 14

1Publication Order Number:

2N6035/D

(PNP) 2N6034, 2N6035,

2N6036; (NPN) 2N6038,

2N6039

Plastic Darlington

Complementary Silicon

Power Transistors

Plastic Darlington complementary silicon power transistors are

designed for general purpose amplifier and low−speed switching

applications.

Features

•ESD Ratings: Machine Model, C; > 400 V

Human Body Model, 3B; > 8000 V

•Epoxy Meets UL 94 V−0 @ 0.125 in

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage 2N6034

2N6035, 2N6038

2N6036, 2N6039

VCEO 40

Vdc

Collector−Base Voltage 2N6034

2N6035, 2N6038

2N6036, 2N6039

VCBO 40

Vdc

Emitter−Base Voltage VEBO 5.0 Vdc

Collector Current Continuous

Peak

IC4.0

8.0

Adc

Apk

Base Current IB100 mAdc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD40

320

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD1.5

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg – 65 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 3.12 °C/W

Thermal Resistance, Junction−to−Ambient RqJA 83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

4.0 AMPERES DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

40, 60, 80 VOLTS, 40 WATTS

Y = Year

WW = Work Week

2N603x = Device Code

x = 4, 5, 6, 8, 9

G=Pb−Free Package

TO−225AA

CASE 77

STYLE 1

MARKING DIAGRAM

YWW

N603xG

321

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

COLLECTOR 2,4

BASE

EMITTER 1

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0) 2N6034

2N6035, 2N6038

2N6036, 2N6039

VCEO(sus)

−

Vdc

Collector−Cutoff Current

(VCE = 40 Vdc, IB = 0) 2N6034

(VCE = 60 Vdc, IB = 0) 2N6035, 2N6038

(VCE = 80 Vdc, IB = 0) 2N6036, 2N6039

ICEO

−

100

Collector−Cutoff Current

(VCE = 40 Vdc, VBE(off) = 1.5 Vdc) 2N6034

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6035, 2N6038

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N6036, 2N6039

(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N6034

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N6035, 2N6038

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N6036, 2N6039

ICEX

−

100

500

Collector−Cutoff Current

(VCB = 40 Vdc, IE = 0) 2N6034

(VCB = 60 Vdc, IE = 0) 2N6035, 2N6038

(VCB = 80 Vdc, IE = 0) 2N6036, 2N6039

ICBO

−

0.5

mAdc

Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO −2.0 mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.5 Adc, VCE = 3.0 Vdc)

(IC = 2.0 Adc, VCE = 3.0 Vdc)

(IC = 4.0 Adc, VCE = 3.0 Vdc)

hFE

500

750

100

−

15,000

−

Collector−Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 8.0 mAdc)

(IC = 4.0 Adc, IB = 40 mAdc)

VCE(sat) −

−2.0

3.0

Vdc

Base−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 40 mAdc)

VBE(sat) −4.0 Vdc

Base−Emitter On Voltage

(IC = 2.0 Adc, VCE = 3.0 Vdc)

VBE(on) −2.8 Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current−Gain

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

|hfe| 25 − −

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6034, 2N6035, 2N6036

2N6038, 2N6039

Cob

−

200

100

*Indicates JEDEC Registered Data.

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039

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Figure 1. Switching Times Test Circuit

4.0

0.04

Figure 2. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)μ

2.0

1.0

0.6

0.2 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0

0.4

0.8

PNP

NPN

td @ VBE(off) = 0

approx

+8.0 V

approx

-12 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 ms

51 D1

+4.0 V

VCC

-30 V

TUT

≈ 8.0 k ≈ 60

SCOPE

for td and tr, D1 is disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

Figure 3. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE,

NORMALIZED

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 100

500

qJC(t) = r(t) qJC

qJC = 3.12°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02 0.03 0.3 3.0 30 300

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039

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ACTIVE−REGION SAFE−OPERATING AREA

1.0

5.0

Figure 4. 2N6035, 2N6036

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

7.0

5.0

3.0

2.0

0.1 7.0 10 30 50 100

BONDING WIRE LIMITED

THERMALLY LIMITED

1.0

IC, COLLECTOR CURRENT (AMP)

TJ = 150°C

1.0ms 100 ms

Figure 5. 2N6038, 2N6039

0.7

0.5

0.2

2N6036

2N6035

0.3

1.0

5.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

7.0

5.0

3.0

2.0

0.1 7.0 10 30 50 10070

1.0

IC, COLLECTOR CURRENT (AMP)

0.7

0.5

0.2

2N6039

2N6038

0.3

5.0ms

@ TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

100 ms

1.0ms

5.0ms

BONDING WIRE LIMITED

THERMALLY LIMITED

TJ = 150°C

@ TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 4 and 5 is based on TJ(pk) = 150_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150_C. TJ(pk) may be calculated from the data in Figure 3.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

200

0.04

VR, REVERSE VOLTAGE (VOLTS)

10 0.4 0.6 1.0 2.0 404.00.06 0.1 0.2

C, CAPACITANCE (pF)

100

TC = 25°C

Cib

Cob

PNP

NPN

Figure 6. Capacitance

6.0 10 20

6.0 k

0.04

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

300 0.06 0.1 0.2 0.6 1.0 4.0

600

800

400

hFE, DC CURRENT GAIN

1.0 k

2.0 k

VCE = 3.0 V

0.4 2.0

PNP

2N6034, 2N6035, 2N6036

NPN

2N6038, 2N6039

4.0 k

3.0 k

TC = 125°C

25°C

-55°C

6.0 k

0.04

IC, COLLECTOR CURRENT (AMP)

300 0.06 0.1 0.2 0.6 1.0 4.0

600

800

400

hFE, DC CURRENT GAIN

1.0 k

2.0 k

VCE = 3.0 V

0.4 2.0

4.0 k

3.0 k

TJ = 125°C

25°C

-55°C

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039

http://onsemi.com

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 8. Collector Saturation Region

3.4

0.1

IB, BASE CURRENT (mA)

0.6 0.2 1.0 2.0 10 100

2.2

1.8

IC =

0.5 A

TJ = 25°C

1.0 A

2.6

3.0

0.5 5.0

2.2

0.04

IC, COLLECTOR CURRENT (AMP)

0.06 0.1 0.2 0.4 0.6 2.0 4.0

1.8

1.4

1.0

0.6

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 9. “On” Voltages

VBE @ VCE = 3.0 V

1.0

20 50

1.4

1.0

2.0 A 4.0 A

3.4

0.1

IB, BASE CURRENT (mA)

0.6 0.2 1.0 2.0 10 10

2.2

1.8

IC =

0.5 A

TJ = 25°C

1.0 A

2.6

3.0

0.5 5.0 20 50

1.4

1.0

2.0 A 4.0 A

IC, COLLECTOR CURRENT (AMP)

2.2

0.04 0.06 0.1 0.2 0.4 0.6 2.0 4.0

1.8

1.4

1.0

0.6

0.2

V, VOLTAGE (VOLTS)

1.0

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V

ORDERING INFORMATION

Device Package Shipping

2N6034 TO−225AA

500 Units / Box

2N6034G TO−225AA

(Pb−Free)

2N6035 TO−225AA

2N6035G TO−225AA

(Pb−Free)

2N6036 TO−225AA

2N6036G TO−225AA

(Pb−Free)

2N6038 TO−225AA

2N6038G TO−225AA

(Pb−Free)

2N6039 TO−225AA

2N6039G TO−225AA

(Pb−Free)

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039

http://onsemi.com

PACKAGE DIMENSIONS

TO−225AA

CASE 77−09

ISSUE Z

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077-01 THRU -08 OBSOLETE, NEW STANDARD

077-09.

−B−

−A−M

132

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.065 1.15 1.65

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 --- 1.02 ---

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2N6035/D

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