BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor MMBT4401
Document number: BL/SSSTC073 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 B40 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6
V
Collector cut-off current ICBO VCB=50V,IE=0 0.1 μA
Collector cut-off current ICEO VCE=35V,IE=0 0.1 μA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA
DC current gain hFE
VCE=1V,IC=0.1mA
VCE=1V,IC=1.0mA
VCE=1V,IC=10mA
VCE=1V,IC=150mA
VCE=2V,IC=500mA
20
40
80
100
40
300
Collector-emitter saturation voltage VCE(sat)
IC=150mA, IB=15mA B
IC=500mA, IB=50mA B
0.4
0.75
V
Base-emitter saturation voltage VBE(sat)
IC=150mA, IB=15mA B
IC=500mA, IB=50mA B
0.75
0.95
1.2
V
Transition frequency fT
VCE=10V, IC= 20mA
f=100MHz 250 MHz
Collector output capacitance Cob VCB=5V,IE=0,f=1MHz 6.5 pF