Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.030 @ VGS = 4.5 V 7 SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4800BDY Si4800BDY-T1 (with Tape and Reel) Si4800BDY--E3 (Lead (Pb)-Free) Si4800BDY-T1--E3 (Lead (Pb)-Free with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "25 TA = 25_C Continuous Drain Current (TJ = 150_C)a, b TA = 70_C Pulsed Drain Current (10 ms Pulse Width) 9 IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 6.5 7.0 IDM Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b ID Unit 5.0 40 A 2.3 2.5 1.3 1.6 0.8 TJ, Tstg -55 to 150 W _C THERMAL RESISTANCE RATINGS Limits Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady-State Steady-State RthJA RthJF Typ Max 40 50 70 95 24 30 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 72124 S-41524--Rev. D, 16-Aug-04 www.vishay.com 1 Si4800BDY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.8 Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ Max Unit 1.8 V VDS = 0 V, VGS = "20 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea rDS(on) VDS w 5 V, VGS = 10 V 30 mA A VGS = 10 V, ID = 9 A 0.0155 0.0185 VGS = 4.5 V, ID = 7 A 0.023 0.030 gfs VDS = 15 V, ID = 9 A 16 VSD IS = 2.3 A, VGS = 0 V 0.75 1.2 8.7 13 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 5.0 V, ID = 9 A 1.5 nC 3.5 1.4 2.2 td(on) 7 15 tr 12 20 32 50 14 25 30 60 td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 0.5 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W IF = 2.3 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72124 S-41524--Rev. D, 16-Aug-04 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 5 V 35 Transfer Characteristics 40 4V 25_C 30 I D - Drain Current (A) 30 I D - Drain Current (A) TC = -55_C 35 25 20 3V 15 10 5 25 125_C 20 15 10 5 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 On-Resistance vs. Drain Current 2.0 2.5 3.0 3.5 4.0 4.5 Capacitance 0.040 1200 1000 0.032 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 1.5 VGS - Gate-to-Source Voltage (V) VGS = 4.5 V 0.024 VGS = 10 V 0.016 Ciss 800 600 400 Coss 0.008 200 Crss 0.000 0 0 5 10 15 20 25 30 0 4 ID - Drain Current (A) 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 6 1.8 VDS = 15 V ID = 9 A 5 1.6 rDS(on) - On-Resiistance (Normalized) V GS - Gate-to-Source Voltage (V) 8 4 3 2 1 VGS = 10 V ID = 9 A 1.4 1.2 1.0 0.8 0 0 2 4 6 8 Qg - Total Gate Charge (nC) Document Number: 72124 S-41524--Rev. D, 16-Aug-04 10 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.06 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 50 TJ = 150_C 10 0.05 0.04 ID = 9 A 0.03 0.02 0.01 TJ = 25_C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) Threshold Voltage 6 8 10 Single Pulse Power, Junction-to-Ambient 0.4 150 0.2 120 ID = 250 mA -0.0 90 Power (W) V GS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) -0.2 60 -0.4 30 -0.6 -0.8 -50 -25 0 25 50 75 100 125 0 10-3 150 10-2 TJ - Temperature (_C) 10-1 1 10 Time (sec) 100 Safe Operating Area, Junction-to-Foot Limited by rDS(on) I D - Drain Current (A) 10 1 ms 1 0.1 10 ms 100 ms 1s 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72124 S-41524--Rev. D, 16-Aug-04 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 Normalized Effective Transient Thermal Impedance 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 10-1 1 Square Wave Pulse Duration (sec) Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 Document Number: 72124 S-41524--Rev. D, 16-Aug-04 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5