Si4800BDY
Vishay Siliconix
Document Number: 72124
S-41524—Rev. D, 16-Aug-04
www.vishay.com
1
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
30
0.0185 @ VGS = 10 V 9
30
0.030 @ VGS = 4.5 V 7
SD
SD
SD
GD
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
G
D
S
Ordering Information: Si4800BDY
Si4800BDY-T1 (with Tape and Reel)
Si4800BDY—E3 (Lead (Pb)-Free)
Si4800BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "25 V
Continuous Drain Current (TJ = 150
_
C)a, b
TA = 25_C
ID
9 6.5
Continuous Drain Current (TJ = 150_C)a,
b
TA = 70_CID7.0 5.0
A
Pulsed Drain Current (10 ms Pulse Width) IDM 40 A
Continuous Source Current (Diode Conduction)a, bIS2.3
Maximum Power Dissipationa, b
TA = 25_C
PD
2.5 1.3
W
Maximum Power Dissipationa,
b
TA = 70_CPD1.6 0.8 W
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C
THERMAL RESISTANCE RATINGS
Limits
Parameter S
y
mbol Typ Max Unit
Mi J ti tAbit
a
t v 10 sec
R
40 50
Maximum Junction-to-Ambienta
Steady-State RthJA 70 95 _C/W
Maximum Junction-to-Foot (Drain) Steady-State RthJF 24 30
C/W
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Si4800BDY
Vishay Siliconix
www.vishay.com
2Document Number: 72124
S-41524—Rev. D, 16-Aug-04
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.8 1.8 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V 1
mA
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 55_C 5 mA
On-State Drain CurrentaID(on) VDS w 5 V, VGS = 10 V30 A
Drain
-
Source On
-
State Resistance
a
rDS(on)
VGS = 10 V, I D = 9 A 0.0155 0.0185
W
D
ra
i
n-
S
ource
O
n-
St
a
t
e
R
es
i
s
t
ance
a
rDS(on) VGS = 4.5 V, ID = 7 A 0.023 0.030
W
Forward Transconductanceagfs VDS = 15 V, ID = 9 A 16 S
Diode Forward VoltageaVSD IS = 2.3 A, VGS = 0 V 0.75 1.2 V
Dynamicb
Total Gate Charge Qg8.7 13
Gate-Source Charge Qgs VDS = 15 V, VGS = 5.0 V, ID = 9 A 1.5 nC
Gate-Drain Charge Qgd 3.5
Gate Resistance Rg0.5 1.4 2.2 W
Turn-On Delay Time td(on) 7 15
Rise Time trVDD = 15 V, RL = 15 W12 20
Turn-Off Delay Time td(off)
,
ID ^ 1 A, VGEN = 10 V, Rg = 6 W32 50 ns
Fall Time tf14 25
Source-Drain Reverse Recovery Time trr IF = 2.3 A, di/dt = 100 A/ms 30 60
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Si4800BDY
Vishay Siliconix
Document Number: 72124
S-41524—Rev. D, 16-Aug-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
200
400
600
800
1000
1200
048121620
0
5
10
15
20
25
30
35
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
5
10
15
20
25
30
35
40
012345
VGS = 10 thru 5 V TC = −55_C
125_C
25_C
Output Characteristics Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
− Drain Current (A)ID
VGS − Gate-to-Source Voltage (V)
− Drain Current (A)ID
3 V
− On-Resistance (rDS(on) W)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−50 −25 0 25 50 75 100 125 150
0
1
2
3
4
5
6
0246810
0.000
0.008
0.016
0.024
0.032
0.040
0 5 10 15 20 25 30
VDS − Drain-to-Source Voltage (V)
Crss
VDS = 15 V
ID = 9 A
ID − Drain Current (A)
VGS = 10 V
ID = 9 A
VGS = 10 V
VGS = 4.5 V
Gate Charge
− Gate-to-Source Voltage (V)
Q
g
− Total Gate Charge (nC)
C − Capacitance (pF)
VGS
Capacitance
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
Coss
Ciss
4 V
On-Resistance vs. Drain Current
rDS(on) − On-Resiistance
(Normalized)
Si4800BDY
Vishay Siliconix
www.vishay.com
4Document Number: 72124
S-41524—Rev. D, 16-Aug-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0246810
TJ = 150_C
ID = 9 A
50
1
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
− On-Resistance (rDS(on) W)
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
− Source Current (A)IS
−0.8
−0.6
−0.4
−0.2
−0.0
0.2
0.4
−50 −25 0 25 50 75 100 125 150
ID = 250 mA
Threshold Voltage
Variance (V)VGS(th)
TJ − Temperature (_C)
Safe Operating Area, Junction-to-Foot
VDS − Drain-to-Source Voltage (V)
100
1
0.1 1 10 100
0.01
10
100 ms
− Drain Current (A)ID
0.1
Limited
by rDS(on)
TC = 25_C
Single Pulse
1 s
10 s
dc
10
TJ = 25_C
10 ms
1 ms
0
90
150
30
60
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
120
11010−1
10−2
10−3
Si4800BDY
Vishay Siliconix
Document Number: 72124
S-41524—Rev. D, 16-Aug-04
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10−310−211010−1
10−4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
10−310−21 10 60010−1
10−4100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 70_C/W
3. TJM − TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM