DMN2016LHAB-7 - DIODES INC - Datasheet.Directory

DMN2016LHAB

Document number: DS36133 Rev. 5 - 2

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www.diodes.com

July 2014

DMN2016LHAB

ADVANCE INFORMATION

NEW PRODUCT

Gate Protection

Diode

Gate Protection

Diode

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS R

DS(on)max ID

= +25°C

20V

15.5mΩ @ VGS = 4.5V 7.5A

16.5mΩ @ VGS = 4.0V 7.3A

19mΩ @ VGS = 3.1V 6.9A

20mΩ @ VGS = 2.5V 6.7A

30mΩ @ VGS = 1.8V 5.4A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (RDS(ON)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• Power Management Functions

• Battery Pack

• Load Switch

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

• Case: U-DFN2030-6

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.012 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN2016LHAB-7 U-DFN2030-6 3,000 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

ESD PROTECTED TO 2kV

26W = Product Type Marking Code

YYWW = Date Code Marking

YY = Last digit of year (ex: 12 for 2012)

WW = Week code (01 to 53)

Top View

Pin Configuration

G2 S2 S2

G1 S1 S1

Bottom Drain Contact

D1/D2

26W

YYWW

Bottom View

D1/D2

U-DFN2030-6

DMN2016LHAB

Document number: DS36133 Rev. 5 - 2

2 of 6

www.diodes.com

July 2014

DMN2016LHAB

ADVANCE INFORMATION

NEW PRODUCT

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Drain-Source Voltage VDSS 20 V

Gate-Source Voltage VGSS ±12 V

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C ID 7.5

5.8 A

t < 10s TA = +25°C

TA = +70°C ID 7.7

6.0 A

Pulsed Drain Current (10μs pulse, duty cycle = 1% ) IDM 45 A

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5) TA = +25°C PD 1.2 W

TA = +70°C 0.75

Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 106 °C/W

t < 10s 100

Total Power Dissipation (Note 6) TA = +25°C PD 1.65 W

TA = +70°C 1

Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 78

°C/W

t < 10s 72

Thermal Resistance, Junction to Case RθJC 11.4

Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage BVDSS 20 — — V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 μA VDS = 20V, VGS = 0V

Gate-Source Leakage IGSS — — ±10 μA VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage VGS

(

)

0.5 0.71 1.1 V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance RDS(ON) —

13 15.5

mΩ

VGS = 4.5V, ID = 4.0A

13.5 16.5 VGS = 4.0V, ID = 4.0A

14 19 VGS = 3.1V, ID = 4.0A

15 20 VGS = 2.5V, ID = 4.0A

21 30 VGS = 1.8V, ID = 3.5A

Forward Transfer Admittance |Yfs| — 25 — S

VDS = 5V, ID = 6A

Diode Forward Voltage VSD — 0.75 1.0 V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance Ciss — 1550 — pF VDS = 10V, VGS = 0V,

f = 1.0MHz

Output Capacitance Coss — 166 — pF

Reverse Transfer Capacitance Crss — 145 — pF

Gate Resistance R

— 1.37 — Ω V

DS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 2.5V) Q

— 8.4 — nC

VDS = 10V, ID = 6A

Total Gate Charge (VGS = 4.5V) Q

— 16 — nC

Gate-Source Charge Q

s — 2.3 — nC

Gate-Drain Charge Q

d — 2.5 — nC

Turn-On Delay Time tD

(

)

— 6.9 — ns

VDD = 10V, RL = 1.7Ω,

VGS = 5.0V, RG = 3Ω

Turn-On Rise Time t

— 15.5 — ns

Turn-Off Delay Time tD

(

off

)

— 40.9 — ns

Turn-Off Fall Time tf — 12 — ns

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad

7. Repetitive rating, pulse width limited by junction temperature

8. Guaranteed by design. Not subject to product testing

DMN2016LHAB

Document number: DS36133 Rev. 5 - 2

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July 2014

DMN2016LHAB

ADVANCE INFORMATION

NEW PRODUCT

0 0.5 1.0 1.5 2.0

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristic

I, D

(A)

V= 1.2V

V= 1.5V

V= 1.8V

V= 2.5V

V = 3.0V

V = 3.5V

V = 4.0V

V = 4.5V

V = 10V

0 0.5 1.0 1.5 2.0

V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

I, D

(A)

V = 5.0V

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

0.004

0.006

0.008

0.012

0.014

0.016

0.018

0 5 10 15 20 25 30

0.010

I , DRAIN-SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

, D

AIN-S

N-

ESISTANCE ( )

DS(ON)

V = 2.5V

V = 4.5V

0.005

0.015

0 5 10 15 20

0.010

0.020

I , DRAIN CURRENT (A)

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

, D

AIN-S

N-

ESISTANCE ( )

DS(ON)

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = 4.5V

0.6

0.8

1.0

1.2

1.4

1.8

, D

-S

ON-RESISTANCE (NORMALIZED)

DS(ON)

1.6

-50-25 0 255075100125150

T , JUNCTION TEMPERATURE ( C)

Figure 5 On-Resistance Variation with Temperature

V=.5V

I= 1A

V= V

I= 3A

3.6

V= V

I= 5A

4.5

0.004

0.006

0.008

0.012

0.014

0.016

0.018

0.010

0.020

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

, D

AIN-S

N-

ESIS

E ( )

DS(ON)

V= V

I= 1A

2.5

V= V

I= 3A

3.6

V = 4.5V

I= 5A

DMN2016LHAB

Document number: DS36133 Rev. 5 - 2

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July 2014

DMN2016LHAB

ADVANCE INFORMATION

NEW PRODUCT

0 2 4 6 8 10 1214 161820

1,000

, J

E (p

)

100

1,000

V , DRAIN-SOURCE VOLTAGE (V)

Figure 7 Typical Junction Capacitance

iss

oss

rss

f = 1MHz

0 5 10 15 20 25 30 35 40

Q(nC)

, TOTAL GATE CHARGE

Figure 8 Gate Charge

LD V

E (V)

V= 10V

I=A

0.1 1 10 100

V , DRAIN-SOURCE VOLTAGE (V)

Figure 9 SOA, Safe Operation Area

100

I, D

(A)

0.1

0.01

Limited

DS(on)

T = 150°C

T = 25°C

J(max)

V = 12V

Single Pulse

DUT on 1 * MRP Board

P = 10s

P = 1s

P = 100ms

P = 10ms

P = 1ms

P = 100µs

0.1 1 10 100

V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 SOA, Safe Operation Area

100

I, D

(A)

0.1

0.01

Limited

DS(on)

T = 150°C

T = 60°C

J(max)

V = 12V

Single Pulse

DUT on 1 * MRP Board

P = 10s

P = 1s

P = 100ms

P = 10ms

P = 1ms

P = 100µs

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

t1, PULSE DURATION TIME (sec)

Figure 11 Transient Thermal Resistance

0.001

r(t),

ANSIEN

MAL

ESIS

0.01

0.1

R (t) = r(t) * R

R = 100°C/W

Duty Cycle, D = t1/ t2

θθ

JA JA

D = 0.5

D = 0.7

D = 0.9

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

DMN2016LHAB

Document number: DS36133 Rev. 5 - 2

5 of 6

www.diodes.com

July 2014

DMN2016LHAB

ADVANCE INFORMATION

NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

U-DFN2030-6

Type B

Dim Min Max Typ

A 0.55 0.65 0.60

A1 0 0.05 0.02

A3 - - 0.15

b 0.25 0.35 0.30

D 1.95 2.05 2.00

D2 1.40 1.60 1.50

E 2.95 3.05 3.00

E2 1.74 1.94 1.84

e - - 0.65

L 0.28 0.38 0.33

Z - - 0.20

All Dimensions in mm

Dimensions Value

(in mm)

C 0.650

G 0.150

X 0.400

X1 1.600

X2 1.700

Y 0.530

Y1 1.940

Y2 3.300

A1 A3

(Pin #1 ID)

Seating Plane

Z (4x)

DMN2016LHAB

Document number: DS36133 Rev. 5 - 2

6 of 6

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July 2014

DMN2016LHAB

ADVANCE INFORMATION

NEW PRODUCT

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

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failure of the life support device or to affect its safety or effectiveness.

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