1CY7C1350F CY7C1350F 4-Mb (128K x 36) Pipelined SRAM with NoblTM Architecture Functional Description[1] Features * Pin compatible and functionally equivalent to ZBTTM devices * Internally self-timed output buffer control to eliminate the need to use OE * Byte Write capability * 128K x 36 common I/O architecture * Single 3.3V power supply * 2.5V/3.3V I/O Operation The CY7C1350F is a 3.3V, 128K x 36 synchronous-pipelined Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1350F is equipped with the advanced No Bus LatencyTM (NoBLTM) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of the SRAM, especially in systems that require frequent Write/Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (CEN) signal, which, when deasserted, suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 2.8 ns (200-MHz device) * Fast clock-to-output times -- 2.6 ns (for 250-MHz device) -- 2.6 ns (for 225-MHz device) -- 2.8 ns (for 200-MHz device) -- 3.5 ns (for 166-MHz device) Write operations are controlled by the four Byte Write Select (BW[A:D]) and a Write Enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. -- 4.0 ns (for 133-MHz device) -- 4.5 ns (for 100-MHz device) * Clock Enable (CEN) pin to suspend operation * JEDEC-standard 100 TQFP and 119 BGA packages Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. In order to avoid bus contention, the output drivers are synchronously three-stated during the data portion of a write sequence. * Burst Capability--linear or interleaved burst order . * Synchronous self-timed writes * Asynchronous output enable (OE) * "ZZ" Sleep mode option Logic Block Diagram A0, A1, A ADDRESS REGISTER 0 A1 A1' D1 Q1 A0 A0' BURST D0 Q0 LOGIC MODE CLK CEN ADV/LD C C WRITE ADDRESS REGISTER 1 WRITE ADDRESS REGISTER 2 S E N S E ADV/LD WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC BWA BWB BWC BWD MEMORY ARRAY WRITE DRIVERS A M P S WE O U T P U T R E G I S T E R S S T E E R I N G E INPUT REGISTER 1 OE CE1 CE2 CE3 ZZ E O U T P U T D A T A INPUT REGISTER 0 B U F F E R S DQs DQPA DQPB DQPC DQPD E E READ LOGIC SLEEP CONTROL Note: 1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05305 Rev. *A * 3901 North First Street * San Jose, CA 95134 * 408-943-2600 Revised January 19, 2004 CY7C1350F . Selection Guide 250 MHz 225 MHz 200 MHz 166 MHz 133 MHz 100 MHz Unit 2.6 325 40 2.6 290 40 2.8 265 40 3.5 240 40 4.0 225 40 4.5 205 40 ns mA mA Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current Shaded area contains advance information. Please contact your local Cypress sales representative for availability of these parts. VDD VSS CLK WE CEN OE ADV/LD 92 91 90 89 88 87 86 85 A CE3 93 A BWA 94 81 BWB 95 82 BWC 96 NC / 9M BWD 97 83 CE2 98 84 A CE1 99 A 1 80 DQC 2 79 3 DQB DQC 78 VDDQ 4 DQB 77 5 VDDQ VSS 76 6 VSS DQC 75 DQC 7 DQB 74 DQC 8 DQB 73 DQC 9 DQB 72 10 DQB VSS 71 VDDQ 11 VSS 70 12 VDDQ DQC 69 13 DQB DQC 68 NC 14 DQB 67 15 VSS VDD 66 NC NC 16 65 VSS 17 64 VDD ZZ DQD 18 63 19 DQA DQD 62 VDDQ 20 DQA 61 21 VDDQ VSS 60 DQD 22 VSS 59 23 DQA DQD 58 24 DQA DQD 57 DQD 25 DQA 56 26 DQA VSS 55 VDDQ 27 VSS 54 28 VDDQ DQD 53 DQD 29 DQA 52 DQPD 30 DQA 51 DQPA Document #: 38-05305 Rev. *A 49 50 A 43 A 42 NC / 72M NC / 36M 48 41 VDD A 40 VSS 47 39 NC / 144M 46 38 A0 NC / 288M A 37 A1 A 36 A 45 35 44 34 A A 33 A 32 CY7C1350F A MODE 31 BYTE D DQPC A BYTE C 100 100-Pin TQFP NC / 18M Pin Configuration DQPB BYTE B BYTE A Page 2 of 16 CY7C1350F Pin Configuration (continued) 119-Ball Bump BGA 1 2 3 4 5 6 7 A B C D E F G H J K L M N P VDDQ A A NC / 18M A A VDDQ NC CE2 A A A DQPC A VSS A VSS CE3 A DQPB NC NC DQC ADV/LD VDD NC R T U NC DQB DQC DQC VSS CE1 VSS DQB DQB VDDQ DQC VSS OE VSS DQB VDDQ DQC DQC VDDQ DQD DQC DQC VDD DQD BWC VSS VSS VSS NC / 9M BWB VSS VSS VSS DQB DQB VDD DQA DQB DQB VDDQ DQA DQD VDDQ DQD DQD BWD VSS BWA VSS DQA DQA DQA VDDQ DQD DQD VSS CEN A1 VSS DQA DQA DQD DQPD VSS A0 VSS DQPA DQA NC A MODE VDD NC A NC NC NC / 72M A A A NC / 36M ZZ VDDQ NC NC NC NC NC VDDQ WE VDD CLK NC Pin Definitions Name 119BGA TQFP I/O Description P4,N4,A2, A3,A5,A6, B3,B5,C2, C3,C5,C6, R2,R6,T3, T4,T5 37,38,32, 33,34,35, 44,45,46, 47,48,49, 50,81,82, 99,10 InputSynchronous Address Inputs used to select one of the 128K address locations. Sampled at the rising edge of the CLK. A[1:0] are fed to the two-bit burst counter. L5,G5, G3,L3 93,94, 95,96 InputSynchronous Byte Write Inputs, active LOW. Qualified with WE to conduct writes to the SRAM. Sampled on the rising edge of CLK. WE H4 88 InputSynchronous Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This signal must be asserted LOW to initiate a write sequence. ADV/LD B4 85 InputSynchronous Advance/Load Input. Used to advance the on-chip address counter or load a new address. When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new address can be loaded into the device for an access. After being deselected, ADV/LD should be driven LOW in order to load a new address. CLK K4 89 Input-Clock Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN. CLK is only recognized if CEN is active LOW. CE1 E4 98 InputSynchronous Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 and CE3 to select/deselect the device. CE2 B2 97 InputSynchronous Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3 to select/deselect the device. CE3 B6 92 InputSynchronous Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device. A0, A1, A BW[A:D] Document #: 38-05305 Rev. *A Page 3 of 16 CY7C1350F Pin Definitions Name 119BGA TQFP OE F4 86 InputOutput Enable, asynchronous input, active LOW. Combined with Asynchronous the synchronous logic block inside the device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected state, when the device has been deselected. CEN M4 87 InputSynchronous ZZ T7 64 InputZZ "sleep" Input. This active HIGH input places the device in a Asynchronous non-time critical "sleep" condition with data integrity preserved. During normal operation, this pin can be connected to Vss or left floating. K6,K7,L6, L7,M6,N6, N7,P7,D7, E6,E7,F6, G6,G7,H6, H7,D1,E1, E2,F2,G1, G2,H1,H2, K1,K2,L1, L2,M2,N1, N2,P1 52,53,56, 57,58,59, 62,63,68, 69,72,73, 74,75,78, 79,2,3,6, 7,8,9,12, 13,18,19, 22,23,23, 24,25,28, 29 I/OSynchronous Bidirectional Data I/O Lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the address during the clock rise of the read cycle. The direction of the pins is controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave as outputs. When HIGH, DQs and DQPX are placed in a three-state condition. The outputs are automatically three-stated during the data portion of a write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of OE. P6,D6, D2,P2 51,80, 1,30 I/OSynchronous Bidirectional Data Parity I/O Lines. Functionally, these signals are identical to DQs. During write sequences, DQP[A:D] is controlled by BW[A:D] correspondingly. R3 31 Input Strap pin Mode Input. Selects the burst order of the device. When tied to GND selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. C4,J2, J4,J6,R4 15,16,41, 65,66,91 Power Supply DQs DQP[A:D] MODE VDD I/O VDDQ A1,A7,F1, 4,11,14, F7,J1,J7, 20,27,54, M1,M7,U1, 61,70 U7 I/O Power Supply VSS D3,D5,E3, 5,10,17,2 E5,F3,F5 1,26,40,5 H3,H5,J3, 5,60,67, J5,K3,K5, 71,76,90 M3,M5,N3, N5,P3,P5 Ground NC A4,B1,B7, C1,C7,D4, G4,L4,R1, R5,R7,T1, T2,T6,U6 38,39,42, 43,83,84 Document #: 38-05305 Rev. *A Description Clock Enable Input, active LOW. When asserted LOW the Clock signal is recognized by the SRAM. When deasserted HIGH the Clock signal is masked. Since deasserting CEN does not deselect the device, CEN can be used to extend the previous cycle when required. Power supply inputs to the core of the device. Power supply for the I/O circuitry. Ground for the device. No Connects. Not internally connected to the die. 9M, 18M, 36M, 72M, 144M and 288M are address expansion pins in this device and will be used as address pins in their respective densities. Page 4 of 16 CY7C1350F Introduction Functional Overview The CY7C1350F is a synchronous-pipelined Burst SRAM designed specifically to eliminate wait states during Write/Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock signal is qualified with the Clock Enable input signal (CEN). If CEN is HIGH, the clock signal is not recognized and all internal states are maintained. All synchronous operations are qualified with CEN. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 2.8 ns (200-MHz device). Accesses can be initiated by asserting all three Chip Enables (CE1, CE2, CE3) active at the rising edge of the clock. If Clock Enable (CEN) is active LOW and ADV/LD is asserted LOW, the address presented to the device will be latched. The access can either be a read or write operation, depending on the status of the Write Enable (WE). BW[A:D] can be used to conduct Byte Write operations. Write operations are qualified by the Write Enable (WE). All writes are simplified with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) simplify depth expansion. All operations (Reads, Writes, and Deselects) are pipelined. ADV/LD should be driven LOW once the device has been deselected in order to load a new address for the next operation. Single Read Accesses A read access is initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, (3) the Write Enable input signal WE is deasserted HIGH, and (4) ADV/LD is asserted LOW. The address presented to the address inputs is latched into the Address Register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the rising edge of the next clock the requested data is allowed to propagate through the output register and onto the data bus, provided OE is active LOW. After the first clock of the read access the output buffers are controlled by OE and the internal control logic. OE must be driven LOW in order for the device to drive out the requested data. During the second clock, a subsequent operation (Read/Write/Deselect) can be initiated. Deselecting the device is also pipelined. Therefore, when the SRAM is deselected at clock rise by one of the chip enable signals, its output will three-state following the next clock rise. Burst Read Accesses The CY7C1350F has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Reads without reasserting the address inputs. ADV/LD must be driven LOW in order to load a new address into the SRAM, as described in the Single Read Access section above. The sequence of the burst counter is determined by the MODE input signal. A LOW input on MODE selects a linear burst mode, a HIGH selects an interleaved burst sequence. Both burst counters use A0 and A1 in the burst sequence, and will wrap around when incremented sufficiently. A HIGH input on Document #: 38-05305 Rev. *A ADV/LD will increment the internal burst counter regardless of the state of chip enables inputs or WE. WE is latched at the beginning of a burst cycle. Therefore, the type of access (Read or Write) is maintained throughout the burst sequence. Single Write Accesses Write accesses are initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, and (3) the Write signal WE is asserted LOW. The address presented to the address inputs is loaded into the Address Register. The write signals are latched into the Control Logic block. On the subsequent clock rise the data lines are automatically three-stated regardless of the state of the OE input signal. This allows the external logic to present the data on DQs and DQP[A:D]. In addition, the address for the subsequent access (Read/Write/Deselect) is latched into the Address Register (provided the appropriate control signals are asserted). On the next clock rise the data presented to DQs and DQP[A:D] (or a subset for Byte Write operations, see Write Cycle Description table for details) inputs is latched into the device and the write is complete. The data written during the Write operation is controlled by BW[A:D] signals. The CY7C1350F provides byte write capability that is described in the Write Cycle Description table. Asserting the Write Enable input (WE) with the selected Byte Write Select (BW[A:D]) input will selectively write to only the desired bytes. Bytes not selected during a Byte Write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. Byte write capability has been included in order to greatly simplify Read/Modify/Write sequences, which can be reduced to simple byte write operations. Because the CY7C1350F is a common I/O device, data should not be driven into the device while the outputs are active. The Output Enable (OE) can be deasserted HIGH before presenting data to the DQs and DQP[A:D] inputs. Doing so will tri-state the output drivers. As a safety precaution, DQs and DQP[A:D] are automatically three-stated during the data portion of a write cycle, regardless of the state of OE. Burst Write Accesses The CY7C1350F has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Write operations without reasserting the address inputs. ADV/LD must be driven LOW in order to load the initial address, as described in the Single Write Access section above. When ADV/LD is driven HIGH on the subsequent clock rise, the chip enables (CE1, CE2, and CE3) and WE inputs are ignored and the burst counter is incremented. The correct BW[A:D] inputs must be driven in each cycle of the burst write in order to write the correct bytes of data. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation "sleep" mode. Two clock cycles are required to enter into or exit from this "sleep" mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the "sleep" mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the "sleep" mode. CE1, CE2, and CE3, must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Page 5 of 16 CY7C1350F Linear Burst Address Table (MODE = GND) Interleaved Burst Address Table (MODE = Floating or VDD) First Address A1, A0 Second Address A1, A0 Third Address A1, A0 Fourth Address A1, A0 First Address A1, A0 Second Address A1, A0 Third Address A1, A0 Fourth Address A1, A0 00 01 10 11 00 01 10 11 01 00 11 10 01 10 11 00 10 11 00 01 10 11 00 01 11 10 01 00 11 00 01 10 Truth Table[2, 3, 4, 5, 6, 7, 8] Operation Address Used CE ZZ ADV/LD WE BWx Deselect Cycle None H L L X X X OE L CEN L-H CLK Three-State DQ Continue Deselect Cycle None X L H X X X L L-H Three-State Read Cycle (Begin Burst) External L L L H X L L L-H Data Out (Q) Read Cycle (Continue Burst) Next X L H X X L L L-H Data Out (Q) NOP/Dummy Read (Begin Burst) External L L L H X H L L-H Three-State Dummy Read (Continue Burst) Next X L H X X H L L-H Three-State Write Cycle (Begin Burst) External L L L L L X L L-H Data In (D) Write Cycle (Continue Burst) Next X L H X L X L L-H Data In (D) NOP/WRITE ABORT (Begin Burst) None L L L L H X L L-H Three-State WRITE ABORT (Continue Burst) Next X L H X H X L L-H Three-State IGNORE CLOCK EDGE (Stall) Current X L X X X X H L-H -- SNOOZE MODE None X H X X X X X X Three-State Notes: 2. X ="Don't Care." H = Logic HIGH, L = Logic LOW. CE stands for ALL Chip Enables active. BWx = 0 signifies at least one Byte Write Select is active, BWx = Valid signifies that the desired byte write selects are asserted, see Write Cycle Description table for details. 3. Write is defined by BW[A:D], and WE. See Write Cycle Descriptions table. 4. When a write cycle is detected, all DQs are three-stated, even during byte writes. 5. The DQ and DQP pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 6. CEN = H, inserts wait states. 7. Device will power-up deselected and the DQs in a three-state condition, regardless of OE. 8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQs and DQP[A:D] = Three-state when OE is inactive or when the device is deselected, and DQs and DQP[A:D] = data when OE is active. Document #: 38-05305 Rev. *A Page 6 of 16 CY7C1350F Partial Truth Table for Read/Write[2, 3, 9] Function WE H BWD X BWC X BWB X BWA X Write - No bytes written L H H H H Write Byte A - (DQA and DQPA) L H H H L Write Byte B - (DQB and DQPB) L H H L H Write Bytes A, B L H H L L Write Byte C - (DQC and DQPC) L H L H H Write Bytes C,A L H L H L Write Bytes C, B L H L L H Write Bytes C, B, A L H L L L Write Byte D - (DQD and DQPD) L L H H H Write Bytes D, A L L H H L Write Bytes D, B L L H L H Write Bytes D, B, A L L H L L Write Bytes D, C L L L H H Write Bytes D, C, A L L L H L Write Bytes D, C, B L L L L H Write All Bytes L L L L L Read Note: 9. Table only lists a partial listing of the byte write combinations. Any combination of BW[A:D] is valid. Appropriate write will be done on which byte write is active. ZZ Mode Electrical Characteristics Parameter Description Test Conditions IDDZZ Snooze mode standby current ZZ > VDD - 0.2V tZZS Device operation to ZZ ZZ > VDD - 0.2V tZZREC ZZ recovery time ZZ < 0.2V tZZI ZZ active to snooze current This parameter is sampled tRZZI ZZ inactive to exit snooze current This parameter is sampled Document #: 38-05305 Rev. *A Min. Max. Unit 40 mA 2tCYC ns 2tCYC ns 2tCYC 0 ns ns Page 7 of 16 CY7C1350F Maximum Ratings Current into Outputs (LOW)......................................... 20 mA (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ..................................... -65C to +150C Ambient Temperature with Power Applied.................................................. -55C to +125C Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current .................................................... >200 mA Operating Range Supply Voltage on VDD Relative to GND.........-0.5V to +4.6V DC Voltage Applied to Outputs in Three-State ..........................................-0.5V to VDDQ + 0.5V DC Input Voltage ....................................... -0.5V to VDD + 0.5V Range Ambient Temperature (TA) VDD VDDQ 0C to +70C 3.3V - 5%/+10% 2.5V - 5% to VDD Com'l -40C to +85C Ind'l Electrical Characteristics Over the Operating Range[10, 11] Parameter Description VDD Power Supply Voltage VDDQ I/O Supply Voltage VOH Output HIGH Voltage VOL Output LOW Voltage VIH Input HIGH Voltage[10] VIL Input LOW Voltage[10] IX Input Load Current except ZZ and MODE Test Conditions Min. Max. Unit 3.135 3.6 V 2.375 VDD V VDDQ = 3.3V, VDD = Min., IOH = -4.0 mA 2.4 VDDQ = 2.5V, VDD = Min., IOH = -1.0 mA 2.0 VDDQ = 3.3V, VDD = Min., IOL = 8.0 mA VDDQ = 2.5V, VDD = Min., IOL = 1.0 mA 0.4 V V VDDQ = 2.5V 1.7 VDD + 0.3V V VDDQ = 3.3V -0.3 0.8 V VDDQ = 2.5V -0.3 0.7 V -5 5 A GND VI VDDQ -30 5 GND VI VDDQ, Output Disabled IDD VDD Operating Supply Current VDD = Max., IOUT = 0 mA, f = fMAX = 1/tCYC VDD = Max, Device Deselected, VIN VIH or VIN VIL f = fMAX = 1/tCYC A A 30 A 5 A 4-ns cycle, 250 MHz 325 mA 4.4-ns cycle, 225 MHz 290 mA 5-ns cycle, 200 MHz 265 mA Input = VDD Output Leakage Current A -5 Input = VSS IOZ Automatic CE Power-Down Current--TTL Inputs V VDD + 0.3V Input = VDD ISB1 V 0.4 2.0 VDDQ = 3.3V Input Current of MODE Input = VSS Input Current of ZZ V -5 6-ns cycle, 166 MHz 240 mA 7.5-ns cycle, 133 MHz 225 mA 10-ns cycle, 100MHz 205 mA 4-ns cycle, 250 MHz 120 mA 4.4-ns cycle, 225 MHz 115 mA 5-ns cycle, 200 MHz 110 mA 6-ns cycle, 166 MHz 100 mA 7.5-ns cycle, 133 MHz 90 mA 10-ns cycle, 100 MHz 80 mA Shaded areas contain advance information. Notes: 10. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> -2V (Pulse width less than tCYC/2). 11. TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD. Document #: 38-05305 Rev. *A Page 8 of 16 CY7C1350F Electrical Characteristics Over the Operating Range[10, 11](continued) Max. Unit ISB2 Parameter Automatic CE VDD = Max, Device Deselected, Power-Down VIN 0.3V or VIN > VDDQ - 0.3V, Current--CMOS Inputs f = 0 All speeds 40 mA ISB3 Automatic CE VDD = Max, Device Deselected, or Power-Down VIN 0.3V or VIN > VDDQ - 0.3V Current--CMOS Inputs f = fMAX = 1/tCYC 4-ns cycle, 250 MHz 105 mA 4.4-ns cycle, 225 MHz 100 mA 5-ns cycle, 200 MHz 95 mA 6-ns cycle, 166 MHz 85 mA 7.5-ns cycle, 133 MHz 75 mA 10-ns cycle, 100 MHz 65 mA All speeds 45 mA ISB4 Description Automatic CE Power-Down Current--TTL Inputs Test Conditions VDD = Max, Device Deselected, VIN VIH or VIN VIL, f = 0 Min. AC Test Loads and Waveforms 3.3V I/O Test Load R = 317 3.3V OUTPUT OUTPUT RL = 50 Z0 = 50 GND 5 pF R = 351 INCLUDING JIG AND SCOPE 90% 10% 90% 10% 1 ns 1 ns VL = 1.5V (a) ALL INPUT PULSES VDD (c) (b) 2.5V I/O Test Load R = 1667 2.5V OUTPUT OUTPUT RL = 50 Z0 = 50 GND 5 pF R =1538 VL = 1.25V INCLUDING JIG AND SCOPE (a) ALL INPUT PULSES VDD 90% 10% 90% 10% 1 ns 1 ns (c) (b) Thermal Resistance[12] Parameter Description JA Thermal Resistance (Junction to Ambient) JC Thermal Resistance (Junction to Case) Test Conditions TQFP Package BGA Package Units 41.83 47.63 C/W 9.99 11.71 C/W TQFP Package BGA Package Unit 5 5 pF 5 7 pF Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA / JESD51. Capacitance[12] Parameter Description CIN Input Capacitance CI/O Input/Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VDD = 3.3V, VDDQ = 3.3V Note: 12. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05305 Rev. *A Page 9 of 16 CY7C1350F Switching Characteristics Over the Operating Range[17, 18] 250 MHz Parameter tPOWER Description VDD (typical) to the first Access[13] 225 MHz 200 MHz 166 MHz 133 MHz 100 MHz Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit 1 1 1 1 1 1 ms Clock tCYC Clock Cycle Time 4.0 4.4 5.0 6.0 7.5 10 ns tCH Clock HIGH 1.7 2.0 2.0 2.5 3.0 3.5 ns tCL Clock LOW 1.7 2.0 2.0 2.5 3.0 3.5 ns Output Times tCO Data Output Valid After CLK Rise tDOH Data Output Hold After CLK Rise tCLZ Clock to Low-Z[14, 15, 16] tCHZ Clock to High-Z[14, 15, 16] tOEV OE LOW to Output Valid OE LOW to Output Low-Z[14, 15, 16] tOELZ 2.6 1.0 2.6 1.0 0 2.6 OE HIGH to Output High-Z[14, 15, 16] Set-up Times 2.6 2.8 ns 4.0 0 3.5 ns ns 0 4.0 3.5 0 4.5 2.0 0 3.5 2.8 0 4.0 2.0 0 2.8 2.6 0 3.5 2.0 0 2.6 2.6 0 tOEHZ 1.0 0 2.6 2.8 4.5 ns 4.5 ns 0 ns 4.0 4.5 ns tAS Address Set-up Before CLK Rise 0.8 1.2 1.2 1.5 1.5 1.5 ns tALS ADV/LD Set-up Before CLK Rise 0.8 1.2 1.2 1.5 1.5 1.5 ns tWES GW, BW[A:D] Set-Up Before CLK Rise 0.8 1.2 1.2 1.5 1.5 1.5 ns tCENS CEN Set-up Before CLK Rise Data Input Set-up Before CLK Rise 0.8 1.2 1.2 1.5 1.5 1.5 ns tDS 0.8 1.2 1.2 1.5 1.5 1.5 ns tCES Chip Enable Set-Up Before CLK Rise 0.8 1.2 1.2 1.5 1.5 1.5 ns Address Hold After CLK Rise 0.4 0.5 0.5 0.5 0.5 0.5 ns ADV/LD Hold after CLK Rise GW, BW[A:D] Hold After CLK Rise 0.4 0.5 0.5 0.5 0.5 0.5 ns 0.4 0.5 0.5 0.5 0.5 0.5 ns 0.4 CEN Hold After CLK Rise Data Input Hold After CLK Rise 0.4 0.5 0.5 0.5 0.5 0.5 ns 0.5 0.5 0.5 0.5 0.5 ns Chip Enable Hold After CLK Rise 0.5 0.5 0.5 0.5 0.5 ns Hold Times tAH tALH tWEH tCENH tDH tCEH 0.4 Shaded areas contain advance information. Notes: 13. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD minimum initially before a Read or Write operation can be initiated. 14. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured 200 mV from steady-state voltage. 15. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve Three-state prior to Low-Z under the same system conditions 16. This parameter is sampled and not 100% tested. 17. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V. 18. Test conditions shown in (a) of AC Test Loads unless otherwise noted. Document #: 38-05305 Rev. *A Page 10 of 16 CY7C1350F Switching Waveforms Read/Write Timing[19, 20, 21] 1 2 3 t CYC 4 5 6 A3 A4 7 8 9 A5 A6 A7 10 CLK tCENS tCENH tCH tCL CEN tCES tCEH CE ADV/LD WE BW[A:D] A1 ADDRESS A2 tCO tAS tDS tAH Data In-Out (DQ) tDH D(A1) tCLZ D(A2) D(A2+1) tDOH Q(A3) tOEV Q(A4) tCHZ Q(A4+1) D(A5) Q(A6) tOEHZ tDOH tOELZ OE WRITE D(A1) WRITE D(A2) BURST WRITE D(A2+1) READ Q(A3) READ Q(A4) DON'T CARE BURST READ Q(A4+1) WRITE D(A5) READ Q(A6) WRITE D(A7) DESELECT UNDEFINED Notes: 19. For this waveform ZZ is tied LOW. 20. When CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH, CE1 is HIGH or CE2 is LOW or CE3 is HIGH. 21. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional. Document #: 38-05305 Rev. *A Page 11 of 16 CY7C1350F Switching Waveforms (continued) NOP, STALL, and DESELECT Cycles[19, 20, 22] 1 2 A1 A2 3 4 5 A3 A4 6 7 8 9 10 CLK CEN CE ADV/LD WE BW[A:D] ADDRESS A5 tCHZ D(A1) Data In-Out (DQ) WRITE D(A1) READ Q(A2) STALL READ Q(A3) DON'T CARE Q(A2) D(A4) Q(A3) WRITE D(A4) STALL NOP READ Q(A5) Q(A5) DESELECT CONTINUE DESELECT UNDEFINED ZZ Mode Timing[23, 24] CLK t ZZ ZZ I t ZZREC t ZZI SUPPLY I DDZZ t RZZI ALL INPUTS (except ZZ) Outputs (Q) DESELECT or READ Only High-Z DON'T CARE Notes: 22. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrates CEN being used to create a pause. A write is not performed during this cycle. 23. Device must be deselected when entering ZZ mode. See cycle description table for all possible signal conditions to deselect the device. 24. DQs are in high-Z when exiting ZZ sleep mode. Document #: 38-05305 Rev. *A Page 12 of 16 CY7C1350F Ordering Information Speed (MHz) 250 Ordering Code CY7C1350F-250AC CY7C1350F-250BGC CY7C1350F-250AI CY7C1350F-250BGI 225 CY7C1350F-225AC CY7C1350F-225BGC CY7C1350F-225AI CY7C1350F-225BGI 200 CY7C1350F-200AC CY7C1350F-200BGC CY7C1350F-200AI CY7C1350F-200BGI 166 CY7C1350F-166AC CY7C1350F-166BGC CY7C1350F-166AI CY7C1350F-166BGI 133 CY7C1350F-133AC CY7C1350F-133BGC CY7C1350F-133AI CY7C1350F-133BGI 100 CY7C1350F-100AC CY7C1350F-100BGC CY7C1350F-100AI CY7C1350F-100BGI Package Name Package Type Operating Range A101 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack Commercial BG119 A101 BG119 A101 BG119 A101 BG119 A101 BG119 A101 BG119 A101 BG119 A101 BG119 A101 BG119 A101 BG119 A101 BG119 A101 BG119 119-Ball BGA (14 x 22 x 2.4mm) 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack Industrial 119-Ball BGA (14 x 22 x 2.4mm) 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack Commercial 119-Ball BGA (14 x 22 x 2.4mm) 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack Industrial 119-Ball BGA (14 x 22 x 2.4mm) 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack Commercial 119-Ball BGA (14 x 22 x 2.4mm) 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack Industrial 119-Ball BGA (14 x 22 x 2.4mm) 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack Commercial 119-Ball BGA (14 x 22 x 2.4mm) 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack Industrial 119-Ball BGA (14 x 22 x 2.4mm) 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack Commercial 119-Ball BGA (14 x 22 x 2.4mm) 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack Industrial 119-Ball BGA (14 x 22 x 2.4mm) 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack Commercial 119-Ball BGA (14 x 22 x 2.4mm) 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack Industrial 119-Ball BGA (14 x 22 x 2.4mm) Shaded areas contain advance information. Please contact your local Cypress sales representative to order parts that are not listed in the ordering information table. Document #: 38-05305 Rev. *A Page 13 of 16 CY7C1350F Package Diagram 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101 51-85050-*A 51-85050-*A Document #: 38-05305 Rev. *A Page 14 of 16 CY7C1350F Package Diagram 119-Lead BGA (14 x 22 x 2.4 mm) BG119 51-85115-*B NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device Technology. All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05305 Rev. *A Page 15 of 16 (c) Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C1350F Document History Page Document Title: CY7C1350F 4-Mb (128K x 36) Pipelined SRAM with NoblTM Architecture Document Number: 38-05305 REV. ECN NO. Orig. of Issue Date Change Description of Change ** 119828 12/11/02 HGK New Data Sheet *A 200662 See ECN REF Final Data Sheet Document #: 38-05305 Rev. *A Page 16 of 16