Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm 6.90.1 (4.0) 2.50.1 (0.8) Features * High forward current transfer ratio hFE * Low collector-emitter saturation voltage VCE(sat) * Allowing supply with the radial taping (0.8) (1.0) 3.50.1 (0.7) 14.50.5 (0.85) 0.65 max. Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 100 mA Peak collector current ICP 200 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 0.45+0.10 -0.05 0.45+0.10 -0.05 1.050.05 2.50.5 1 2.50.5 2 1: Emitter 2: Collector 3: Base MT-1-A1 Package 3 Electrical Characteristics Ta = 25C 3C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 A, IC = 0 7 Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 Forward current transfer ratio hFE1 * VCE = 10 V, IC = 2 mA 160 hFE2 VCE = 2 V, IC = 100 mA 90 VCE(sat) IC = 100 mA, IB = 10 mA 0.1 VCB = 10 V, IE = -2 mA, f = 200 MHz 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF Collector-emitter saturation voltage Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ Max Unit V 1 A 1 A 460 0.3 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S No rank hFE1 160 to 260 210 to 340 290 to 460 160 to 460 Product of no-rank classification is not marked. Publication date: April 2003 SJC00234BED 1 2SD1991A PC Ta IC VCE 60 Ta = 25C 1 000 200 100 40 120 A 100 A 30 80 A 60 A 20 0 80 120 160 0 2 4 120 25C -25C 40 160 120 80 40 0.4 0.8 1.2 1.6 0 2.0 0 Base-emitter voltage VBE (V) 200 Forward current transfer ratio hFE 500 Ta = 75C 25C 300 -25C 200 100 0 0.1 1 10 Collector current IC (mA) 1 000 800 1 000 100 Ta = 125C 75C 25C -25C 200 0 0.1 1 10 100 Collector current IC (mA) SJC00234BED 1.0 IC / IB = 10 1 25C 0.1 Ta = 75C -25C 0.01 0.1 1 10 100 fT I E 800 400 0.8 Collector current IC (mA) 300 VCE = 5 V 600 0.6 10 hFE IC VCE = 10 V 400 600 0.4 100 Base current IB (A) hFE IC 600 400 0.2 Base-emitter voltage VBE (V) Transition frequency fT (MHz) 0 0 VCE(sat) IC 200 80 0 10 VCE = 10 V Ta = 25C Collector current IC (mA) Collector current IC (mA) 8 IC I B 160 0 6 240 VCE = 10 V Ta = 75C 400 Collector-emitter voltage VCE (V) IC VBE 200 600 200 20 A Collector-emitter saturation voltage VCE(sat) (V) 40 800 40 A 10 0 Base current IB (A) 300 140 A Ambient temperature Ta (C) Forward current transfer ratio hFE VCE = 10 V Ta = 25C 50 400 0 2 IB VBE 1 200 IB = 160 A Collector current IC (mA) Collector power dissipation PC (mW) 500 1 000 VCB = 10 V Ta = 25C 240 180 120 60 0 - 0.1 -1 -10 Emitter current IE (mA) -100 2SD1991A NV IC 240 10 200 8 6 4 160 VCE = 5 V f = 270 Hz 10 Rg = 100 k 120 80 hfe (x 100) 1 22 k hoe (10-1 S) hre (x 10-4) 4.7 k 40 2 h parameter IC 100 VCE = 10 V Ta = 25C Function = FLAT h Parameter IE = 0 f = 1 MHz Ta = 25C Noise voltage NV (mV) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 12 hie (x 10 k) 0 1 10 Collector-base voltage VCB (V) 100 0 10 100 Collector current IC (A) SJC00234BED 1 000 1 0.1 1 10 Collector current IC (mA) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL