Micron Serial NOR Flash Memory
1.8V, Multiple I/O, 4KB Sector Erase
N25Q128A
Features
• SPI-compatible serial bus interface
• 108 MHz (MAX) clock frequency
• 1.7–2.0V single supply voltage
• Dual/quad I/O instruction provides increased
throughput up to 432 MHz
• Supported protocols
– Extended SPI, dual I/O, and quad I/O
• Execute-in-place (XIP) mode for all three protocols
– Configurable via volatile or nonvolatile registers
– Enables memory to work in XIP mode directly af-
ter power-on
• PROGRAM/ERASE SUSPEND operations
• Continuous read of entire memory via a single com-
mand
– Fast read
– Quad or dual output fast read
– Quad or dual I/O fast read
• Flexible to fit application
– Configurable number of dummy cycles
– Output buffer configurable
• Software reset
• 64-byte, user-lockable, one-time programmable
(OTP) dedicated area
• Erase capability
– Subsector erase 4KB uniform granularity blocks
– Sector erase 64KB uniform granularity blocks
– Full-chip erase
• Write protection
– Software write protection applicable to every
64KB sector via volatile lock bit
– Hardware write protection: protected area size
defined by five nonvolatile bits (BP0, BP1, BP2,
BP3, and TB)
– Additional smart protections, available upon re-
quest
• Electronic signature
– JEDEC-standard 2-byte signature (BB18h)
– Unique ID code (UID): 17 read-only bytes, in-
cluding:
• Two additional extended device ID (EDID)
bytes to identify device factory options
• Customized factory data (14 bytes)
• Minimum 100,000 ERASE cycles per sector
• More than 20 years data retention
• Packages JEDEC standard, all RoHS compliant
– F7 = V-PDFN-8 6mm x 5mm Sawn (MLP8 6mm x
5mm)
– F8 = V-PDFN-8 8mm x 6mm (MLP8 8mm x 6mm)
– 12 = T-PBGA-24b05 6mm x 8mm
– SF = SOP2-16 300 mils body width (SO16W)
– SE = SOP2-8 208 mils body width (SO8W)
128Mb, Multiple I/O Serial Flash Memory
Features
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Products and specifications discussed herein are subject to change by Micron without notice.
Contents
Device Description ........................................................................................................................................... 6
Features ....................................................................................................................................................... 6
Operating Protocols ...................................................................................................................................... 6
XIP Mode ..................................................................................................................................................... 6
Device Configurability .................................................................................................................................. 7
Signal Assignments ........................................................................................................................................... 8
Signal Descriptions ......................................................................................................................................... 10
Memory Organization .................................................................................................................................... 12
Memory Configuration and Block Diagram .................................................................................................. 12
Memory Map – 128Mb Density ....................................................................................................................... 13
Device Protection ........................................................................................................................................... 14
Serial Peripheral Interface Modes .................................................................................................................... 17
SPI Protocols .................................................................................................................................................. 19
Nonvolatile and Volatile Registers ................................................................................................................... 20
Status Register ............................................................................................................................................ 21
Nonvolatile and Volatile Configuration Registers .......................................................................................... 22
Enhanced Volatile Configuration Register .................................................................................................... 25
Flag Status Register ..................................................................................................................................... 26
Command Definitions .................................................................................................................................... 28
READ REGISTER and WRITE REGISTER Operations ........................................................................................ 30
READ STATUS REGISTER or FLAG STATUS REGISTER Command ................................................................ 30
READ NONVOLATILE CONFIGURATION REGISTER Command ................................................................... 30
READ VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command .................................. 31
WRITE STATUS REGISTER Command ......................................................................................................... 31
WRITE NONVOLATILE CONFIGURATION REGISTER Command ................................................................. 32
WRITE VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command ................................. 32
READ LOCK REGISTER Command .............................................................................................................. 33
WRITE LOCK REGISTER Command ............................................................................................................ 34
CLEAR FLAG STATUS REGISTER Command ................................................................................................ 35
READ IDENTIFICATION Operations ............................................................................................................... 36
READ ID and MULTIPLE I/O READ ID Commands ...................................................................................... 36
READ SERIAL FLASH DISCOVERY PARAMETER Command ......................................................................... 37
READ MEMORY Operations ............................................................................................................................ 40
PROGRAM Operations .................................................................................................................................... 44
WRITE Operations .......................................................................................................................................... 49
WRITE ENABLE Command ......................................................................................................................... 49
WRITE DISABLE Command ........................................................................................................................ 49
ERASE Operations .......................................................................................................................................... 51
SUBSECTOR ERASE Command ................................................................................................................... 51
SECTOR ERASE Command ......................................................................................................................... 51
BULK ERASE Command ............................................................................................................................. 52
PROGRAM/ERASE SUSPEND Command ..................................................................................................... 53
PROGRAM/ERASE RESUME Command ...................................................................................................... 55
RESET Operations .......................................................................................................................................... 56
RESET ENABLE and RESET MEMORY Command ........................................................................................ 56
RESET Conditions ...................................................................................................................................... 56
ONE TIME PROGRAMMABLE Operations ....................................................................................................... 57
READ OTP ARRAY Command ...................................................................................................................... 57
PROGRAM OTP ARRAY Command .............................................................................................................. 57
XIP Mode ....................................................................................................................................................... 60
128Mb, Multiple I/O Serial Flash Memory
Features
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Activate or Terminate XIP Using Volatile Configuration Register ................................................................... 60
Activate or Terminate XIP Using Nonvolatile Configuration Register ............................................................. 60
Confirmation Bit Settings Required to Activate or Terminate XIP .................................................................. 61
Terminating XIP After a Controller and Memory Reset ................................................................................. 62
Power-Up and Power-Down ............................................................................................................................ 63
Power-Up and Power-Down Requirements .................................................................................................. 63
Power Loss Rescue Sequence ...................................................................................................................... 64
AC Reset Specifications ................................................................................................................................... 65
Absolute Ratings and Operating Conditions ..................................................................................................... 70
DC Characteristics and Operating Conditions .................................................................................................. 72
AC Characteristics and Operating Conditions .................................................................................................. 73
Package Dimensions ....................................................................................................................................... 75
Part Number Ordering Information ................................................................................................................. 80
Revision History ............................................................................................................................................. 82
Rev. Q – 11/2014 ......................................................................................................................................... 82
Rev. P – 05/2014 .......................................................................................................................................... 82
Rev. O – 2/2014 ........................................................................................................................................... 82
Rev. N – 1/2014 ........................................................................................................................................... 82
Rev. M – 6/2013 .......................................................................................................................................... 82
Rev. L – 1/2013 ............................................................................................................................................ 82
Rev. K – 6/2012 ........................................................................................................................................... 82
Rev. J – 2/2012 ............................................................................................................................................ 82
Rev. I – 12/2011 .......................................................................................................................................... 82
Rev. H – 8/2011 ........................................................................................................................................... 82
Rev. G – 7/2011 ........................................................................................................................................... 82
Rev. F – 2/2011 ........................................................................................................................................... 83
Rev. E – 1/2011 ........................................................................................................................................... 83
Rev. D – 10/2010 ......................................................................................................................................... 83
Rev. C – 2/2010 ........................................................................................................................................... 83
Rev. B – 5/2009 ........................................................................................................................................... 83
Rev. A – 1/2009 ........................................................................................................................................... 83
128Mb, Multiple I/O Serial Flash Memory
Features
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List of Figures
Figure 1: Logic Diagram ................................................................................................................................... 7
Figure 2: 8-Pin, VDFPN8 – MLP8 and SOP2 – SO8W (Top View) ......................................................................... 8
Figure 3: 16-Pin, Plastic Small Outline – SO16 (Top View) .................................................................................. 8
Figure 4: 24-Ball TBGA (Balls Down) ................................................................................................................ 9
Figure 5: Block Diagram ................................................................................................................................ 12
Figure 6: Bus Master and Memory Devices on the SPI Bus ............................................................................... 18
Figure 7: SPI Modes ....................................................................................................................................... 18
Figure 8: Internal Configuration Register ........................................................................................................ 20
Figure 9: READ REGISTER Command ............................................................................................................ 30
Figure 10: WRITE REGISTER Command ......................................................................................................... 32
Figure 11: READ LOCK REGISTER Command ................................................................................................. 34
Figure 12: WRITE LOCK REGISTER Command ............................................................................................... 35
Figure 13: READ ID and MULTIPLE I/O Read ID Commands .......................................................................... 37
Figure 14: READ Command ........................................................................................................................... 41
Figure 15: FAST READ Command ................................................................................................................... 41
Figure 16: DUAL OUTPUT FAST READ ........................................................................................................... 42
Figure 17: DUAL INPUT/OUTPUT FAST READ Command .............................................................................. 42
Figure 18: QUAD OUTPUT FAST READ Command ......................................................................................... 43
Figure 19: QUAD INPUT/OUTPUT FAST READ Command ............................................................................. 43
Figure 20: PAGE PROGRAM Command .......................................................................................................... 45
Figure 21: DUAL INPUT FAST PROGRAM Command ...................................................................................... 46
Figure 22: EXTENDED DUAL INPUT FAST PROGRAM Command ................................................................... 46
Figure 23: QUAD INPUT FAST PROGRAM Command ..................................................................................... 47
Figure 24: EXTENDED QUAD INPUT FAST PROGRAM Command ................................................................... 48
Figure 25: WRITE ENABLE and WRITE DISABLE Command Sequence ............................................................ 50
Figure 26: SUBSECTOR and SECTOR ERASE Command .................................................................................. 52
Figure 27: BULK ERASE Command ................................................................................................................ 53
Figure 28: RESET ENABLE and RESET MEMORY Command ........................................................................... 56
Figure 29: READ OTP Command .................................................................................................................... 57
Figure 30: PROGRAM OTP Command ............................................................................................................ 59
Figure 31: XIP Mode Directly After Power-On .................................................................................................. 61
Figure 32: Power-Up Timing .......................................................................................................................... 63
Figure 33: Reset AC Timing During PROGRAM or ERASE Cycle ........................................................................ 66
Figure 34: Reset Enable ................................................................................................................................. 66
Figure 35: Serial Input Timing ........................................................................................................................ 66
Figure 36: Write Protect Setup and Hold During WRITE STATUS REGISTER Operation (SRWD = 1) ................... 67
Figure 37: Hold Timing .................................................................................................................................. 68
Figure 38: Output Timing .............................................................................................................................. 68
Figure 39: VPPH Timing .................................................................................................................................. 69
Figure 40: AC Timing Input/Output Reference Levels ...................................................................................... 71
Figure 41: V-PDFN-8 6mm x 5mm Sawn (MLP8) – Package Code: F7 ................................................................ 75
Figure 42: V-PDFN-8 8mm x 6mm (MLP8) – Package Code: F8 ........................................................................ 76
Figure 43: T-PBGA-24b05 6mm x 8mm – Package Code: 12 .............................................................................. 77
Figure 44: SOP2-16 (300 mils body width) – Package Code: SF ......................................................................... 78
Figure 45: SOP2-8 (208 mils body width) – Package Code: SE ........................................................................... 79
128Mb, Multiple I/O Serial Flash Memory
Features
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List of Tables
Table 1: Signal Descriptions ........................................................................................................................... 10
Table 2: Sectors[255:0] ................................................................................................................................... 13
Table 3: Data Protection using Device Protocols ............................................................................................. 14
Table 4: Memory Sector Protection Truth Table .............................................................................................. 14
Table 5: Protected Area Sizes – Upper Area ..................................................................................................... 14
Table 6: Protected Area Sizes – Lower Area ...................................................................................................... 15
Table 7: SPI Modes ........................................................................................................................................ 17
Table 8: Extended, Dual, and Quad SPI Protocols ............................................................................................ 19
Table 9: Status Register Bit Definitions ........................................................................................................... 21
Table 10: Nonvolatile Configuration Register Bit Definitions ........................................................................... 22
Table 11: Volatile Configuration Register Bit Definitions .................................................................................. 23
Table 12: Sequence of Bytes During Wrap ....................................................................................................... 25
Table 13: Supported Clock Frequencies .......................................................................................................... 25
Table 14: Enhanced Volatile Configuration Register Bit Definitions .................................................................. 25
Table 15: Flag Status Register Bit Definitions .................................................................................................. 26
Table 16: Command Set ................................................................................................................................. 28
Table 17: Lock Register .................................................................................................................................. 33
Table 18: Data/Address Lines for READ ID and MULTIPLE I/O READ ID Commands ....................................... 36
Table 19: Read ID Data Out ............................................................................................................................ 36
Table 20: Extended Device ID, First Byte ......................................................................................................... 36
Table 21: Serial Flash Discovery Parameter – Header Structure ........................................................................ 38
Table 22: Parameter ID .................................................................................................................................. 38
Table 23: Command/Address/Data Lines for READ MEMORY Commands ....................................................... 40
Table 24: Data/Address Lines for PROGRAM Commands ................................................................................ 44
Table 25: Suspend Parameters ....................................................................................................................... 54
Table 26: Operations Allowed/Disallowed During Device States ...................................................................... 55
Table 27: Reset Command Set ........................................................................................................................ 56
Table 28: OTP Control Byte (Byte 64) .............................................................................................................. 58
Table 29: XIP Confirmation Bit ....................................................................................................................... 61
Table 30: Effects of Running XIP in Different Protocols .................................................................................... 61
Table 31: Power-Up Timing and VWI Threshold ............................................................................................... 64
Table 32: AC RESET Conditions ...................................................................................................................... 65
Table 33: Absolute Ratings ............................................................................................................................. 70
Table 34: Operating Conditions ...................................................................................................................... 70
Table 35: Input/Output Capacitance .............................................................................................................. 70
Table 36: AC Timing Input/Output Conditions ............................................................................................... 71
Table 37: DC Current Characteristics and Operating Conditions ...................................................................... 72
Table 38: DC Voltage Characteristics and Operating Conditions ...................................................................... 72
Table 39: AC Characteristics and Operating Conditions ................................................................................... 73
Table 40: Part Number Information ................................................................................................................ 80
Table 41: Package Details ............................................................................................................................... 80
128Mb, Multiple I/O Serial Flash Memory
Features
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Device Description
The N25Q is the first high-performance multiple input/output serial Flash memory de-
vice manufactured on 65nm NOR technology. It features execute-in-place (XIP) func-
tionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus
interface. The innovative, high-performance, dual and quad input/output instructions
enable double or quadruple the transfer bandwidth for READ and PROGRAM opera-
tions.
Features
The memory is organized as 256 (64KB) main sectors that are further divided into 16
subsectors each (4096 subsectors in total). The memory can be erased one 4KB subsec-
tor at a time, 64KB sectors at a time, or as a whole.
The memory can be write protected by software through volatile and nonvolatile pro-
tection features, depending on the application needs. The protection granularity is of
64KB (sector granularity) for volatile protections
The device has 64 one-time programmable (OTP) bytes that can be read and program-
med with the READ OTP and PROGRAM OTP commands. These 64 bytes can also be
permanently locked with a PROGRAM OTP command.
The device also has the ability to pause and resume PROGRAM and ERASE cycles by us-
ing dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.
Operating Protocols
The memory can be operated with three different protocols:
• Extended SPI (standard SPI protocol upgraded with dual and quad operations)
• Dual I/O SPI
• Quad I/O SPI
The standard SPI protocol is extended and enhanced by dual and quad operations. In
addition, the dual SPI and quad SPI protocols improve the data access time and
throughput of a single I/O device by transmitting commands, addresses, and data
across two or four data lines.
XIP Mode
XIP mode requires only an address (no instruction) to output data, improving random
access time and eliminating the need to shadow code onto RAM for fast execution.
All protocols support XIP operation. For flexibility, multiple XIP entry and exit methods
are available. For applications that must enter XIP mode immediately after powering
up, XIP mode can be set as the default mode through the nonvolatile configuration reg-
ister bits.
128Mb, Multiple I/O Serial Flash Memory
Device Description
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Device Configurability
The N25Q family offers additional features that are configured through the nonvolatile
configuration register for default and/or nonvolatile settings. Volatile settings can be
configured through the volatile and volatile-enhanced configuration registers. These
configurable features include the following:
• Number of dummy cycles for the fast READ commands
• Output buffer impedance
• SPI protocol types (extended SPI, DIO-SPI, or QIO-SPI)
• Required XIP mode
• Enabling/disabling HOLD (RESET function)
• Enabling/disabling wrap mode
Figure 1: Logic Diagram
VCC
DQ0
C
S#
VPP/W#/DQ2
HOLD#/DQ3
VSS
DQ1
Note: 1. Reset functionality is available in devices with a dedicated part number. See Part Num-
ber Ordering Information for more details.
128Mb, Multiple I/O Serial Flash Memory
Device Description
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Signal Assignments
Figure 2: 8-Pin, VDFPN8 – MLP8 and SOP2 – SO8W (Top View)
1
2
3
4
8
7
6
5
S#
DQ1
W#/VPP/DQ2
VSS
VCC
RESET#/HOLD#/DQ3
C
DQ0
Notes: 1. On the underside of the MLP8 package, there is an exposed central pad that is pulled
internally to VSS and must not be connected to any other voltage or signal line on the
PCB.
2. Reset functionality is available in devices with a dedicated part number. See Part Num-
ber Ordering Information for complete package names and details.
Figure 3: 16-Pin, Plastic Small Outline – SO16 (Top View)
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
C
DQ0
DNU
DNU
DNU
DNU
VSS
W#/VPP/DQ2
HOLD#/DQ3
VCC
DNU
DNU
DNU
DNU
S#
DQ1
Note: 1. Reset functionality is available in devices with a dedicated part number. See Part Num-
ber Ordering Information for complete package names and details.
128Mb, Multiple I/O Serial Flash Memory
Signal Assignments
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Figure 4: 24-Ball TBGA (Balls Down)
A
B
C
D
E
NC
NC
NC
NC
NC
NC
VCC
W#/VPP/DQ2
HOLD#/DQ3
NC
NC
VSS
NC
DQ0
NC
NC
C
S#
DQ1
NC
NC
NC
NC
NC
54321
Note: 1. See Part Number Ordering Information for complete package names and details.
128Mb, Multiple I/O Serial Flash Memory
Signal Assignments
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Signal Descriptions
The signal description table below is a comprehensive list of signals for the N25 family
devices. All signals listed may not be supported on this device. See Signal Assignments
for information specific to this device.
Table 1: Signal Descriptions
Symbol Type Description
C Input Clock: Provides the timing of the serial interface. Commands, addresses, or data present at se-
rial data inputs are latched on the rising edge of the clock. Data is shifted out on the falling
edge of the clock.
S# Input Chip select: When S# is HIGH, the device is deselected and DQ1 is at High-Z. When in exten-
ded SPI mode, with the device deselected, DQ1 is tri-stated. Unless an internal PROGRAM,
ERASE, or WRITE STATUS REGISTER cycle is in progress, the device enters standby power mode
(not deep power-down mode). Driving S# LOW enables the device, placing it in the active pow-
er mode. After power-up, a falling edge on S# is required prior to the start of any command.
DQ0 Input
and I/O
Serial data: Transfers data serially into the device. It receives command codes, addresses, and
the data to be programmed. Values are latched on the rising edge of the clock. DQ0 is used for
input/output during the following operations: DUAL OUTPUT FAST READ, QUAD OUTPUT FAST
READ, DUAL INPUT/OUTPUT FAST READ, and QUAD INPUT/OUTPUT FAST READ. When used for
output, data is shifted out on the falling edge of the clock.
In DIO-SPI, DQ0 always acts as an input/output.
In QIO-SPI, DQ0 always acts as an input/output, with the exception of the PROGRAM or ERASE
cycle performed with VPP. The device temporarily enters the extended SPI protocol and then re-
turns to QIO-SPI as soon as VPP goes LOW.
DQ1 Output
and I/O
Serial data:Transfers data serially out of the device. Data is shifted out on the falling edge of
the clock. DQ1 is used for input/output during the following operations: DUAL INPUT FAST
PROGRAM, QUAD INPUT FAST PROGRAM, DUAL INPUT EXTENDED FAST PROGRAM, and QUAD
INPUT EXTENDED FAST PROGRAM. When used for input, data is latched on the rising edge of
the clock.
In DIO-SPI, DQ1 always acts as an input/output.
In QIO-SPI, DQ1 always acts as an input/output, with the exception of the PROGRAM or ERASE
cycle performed with the enhanced program supply voltage (VPP). In this case the device tem-
porarily enters the extended SPI protocol and then returns to QIO-SPI as soon as VPP goes LOW.
DQ2 Input
and I/O
DQ2: When in QIO-SPI mode or in extended SPI mode using QUAD FAST READ commands, the
signal functions as DQ2, providing input/output.
All data input drivers are always enabled except when used as an output. Micron recommends
customers drive the data signals normally (to avoid unnecessary switching current) and float
the signals before the memory device drives data on them.
DQ3 Input
and I/O
DQ3: When in quad SPI mode or in extended SPI mode using quad FAST READ commands, the
signal functions as DQ3, providing input/output. HOLD# is disabled and RESET# is disabled if
the device is selected.
RESET# Control
Input
RESET: This is a hardware RESET# signal. When RESET# is driven HIGH, the memory is in the
normal operating mode. When RESET# is driven LOW, the memory enters reset mode and out-
put is High-Z. If RESET# is driven LOW while an internal WRITE, PROGRAM, or ERASE operation
is in progress, data may be lost.
128Mb, Multiple I/O Serial Flash Memory
Signal Descriptions
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Table 1: Signal Descriptions (Continued)
Symbol Type Description
HOLD# Control
Input
HOLD: Pauses any serial communications with the device without deselecting the device. DQ1
(output) is High-Z. DQ0 (input) and the clock are "Don't Care." To enable HOLD, the device
must be selected with S# driven LOW.
HOLD# is used for input/output during the following operations: QUAD OUTPUT FAST READ,
QUAD INPUT/OUTPUT FAST READ, QUAD INPUT FAST PROGRAM, and QUAD INPUT EXTENDED
FAST PROGRAM.
In QIO-SPI, HOLD# acts as an I/O (DQ3 functionality), and the HOLD# functionality is disabled
when the device is selected. When the device is deselected (S# is HIGH) in parts with RESET#
functionality, it is possible to reset the device unless this functionality is not disabled by means
of dedicated registers bits.
The HOLD# functionality can be disabled using bit 4 of the NVCR or bit 4 of the VECR.
On devices that include DTR mode capability, the HOLD# functionality is disabled as soon as a
DTR operation is recognized.
W# Control
Input
Write protect: W# can be used as a protection control input or in QIO-SPI operations. When in
extended SPI with single or dual commands, the WRITE PROTECT function is selectable by the
voltage range applied to the signal. If voltage range is low (0V to VCC), the signal acts as a
write protection control input. The memory size protected against PROGRAM or ERASE opera-
tions is locked as specified in the status register block protect bits 3:0.
W# is used as an input/output (DQ2 functionality) during QUAD INPUT FAST READ and QUAD
INPUT/OUTPUT FAST READ operations and in QIO-SPI.
VPP Power Supply voltage: If VPP is in the voltage range of VPPH, the signal acts as an additional power
supply, as defined in the AC Measurement Conditions table.
During QIFP, QIEFP, and QIO-SPI PROGRAM/ERASE operations, it is possible to use the addition-
al VPP power supply to speed up internal operations. However, to enable this functionality, it is
necessary to set bit 3 of the VECR to 0.
In this case, VPP is used as an I/O until the end of the operation. After the last input data is shif-
ted in, the application should apply VPP voltage to VPP within 200ms to speed up the internal
operations. If the VPP voltage is not applied within 200ms, the PROGRAM/ERASE operations
start at standard speed.
The default value of VECR bit 3 is 1, and the VPP functionality for quad I/O modify operations is
disabled.
VCC Power Device core power supply: Source voltage.
VSS Ground Ground: Reference for the VCC supply voltage.
DNU – Do not use.
NC – No connect.
128Mb, Multiple I/O Serial Flash Memory
Signal Descriptions
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Memory Organization
Memory Configuration and Block Diagram
Each page of memory can be individually programmed. Bits are programmed from one
through zero. The device is subsector, sector, or bulk-erasable, but not page-erasable.
Bits are erased from zero through one. The memory is configured as 16,777,216 bytes (8
bits each); 256 sectors (64KB each); 4096 subsectors (4KB each); and 65,536 pages (256
bytes each); and 64 OTP bytes are located outside the main memory array.
Figure 5: Block Diagram
HOLD#
S#
W#/VPP Control logic High voltage
generator
I/O shift register
Address register
and counter
256 byte
data buffer
256 bytes (page size)
X decoder
Y decoder
C
Status
register
0000000h
00FFFFFF
00000FFh
64 OTP bytes
DQ0
DQ1
DQ2
DQ3
128Mb, Multiple I/O Serial Flash Memory
Memory Organization
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Memory Map – 128Mb Density
Table 2: Sectors[255:0]
Sector Subsector
Address Range
Start End
255 4095 00FF F000h 00FF FFFFh
⋮ ⋮ ⋮
4080 00FF 0000h 00FF 0FFFh
⋮ ⋮ ⋮ ⋮
127 2047 007F F000h 007F FFFFh
⋮ ⋮ ⋮
2032 007F 0000h 007F 0FFFh
⋮ ⋮ ⋮ ⋮
63 1023 003F F000h 003F FFFFh
⋮ ⋮ ⋮
1008 003F 0000h 003F 0FFFh
⋮ ⋮ ⋮ ⋮
0 15 0000 F000h 0000 FFFFh
⋮ ⋮ ⋮
0 0000 0000h 0000 0FFFh
128Mb, Multiple I/O Serial Flash Memory
Memory Map – 128Mb Density
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Device Protection
Table 3: Data Protection using Device Protocols
Note 1 applies to the entire table
Protection by: Description
Power-on reset and internal timer Protects the device against inadvertent data changes while the power supply is out-
side the operating specification.
Command execution check Ensures that the number of clock pulses is a multiple of one byte before executing a
PROGRAM or ERASE command, or any command that writes to the device registers.
WRITE ENABLE operation Ensures that commands modifying device data must be preceded by a WRITE ENABLE
command, which sets the write enable latch bit in the status register.
Note: 1. Extended, dual, and quad SPI protocol functionality ensures that device data is protec-
ted from excessive noise.
Table 4: Memory Sector Protection Truth Table
Note 1 applies to the entire table
Sector Lock Register
Memory Sector Protection Status
Sector Lock
Down Bit
Sector Write Lock
Bit
0 0 Sector unprotected from PROGRAM and ERASE operations. Protection status re-
versible.
0 1 Sector protected from PROGRAM and ERASE operations. Protection status rever-
sible.
1 0 Sector unprotected from PROGRAM and ERASE operations. Protection status not
reversible except by power cycle or reset.
1 1 Sector protected from PROGRAM and ERASE operations. Protection status not
reversible except by power cycle or reset.
Note: 1. Sector lock register bits are written to when the WRITE TO LOCK REGISTER command is
executed. The command will not execute unless the sector lock down bit is cleared (see
the WRITE TO LOCK REGISTER command). The sector lock register is programmed to
have all protection registers activated at power-up.
Table 5: Protected Area Sizes – Upper Area
Note 1 applies to the entire table
Status Register Content Memory Content
Top/
Bottom
Bit BP3 BP2 BP1 BP0 Protected Area Unprotected Area
0 0 0 0 0 None All sectors
0 0 0 0 1 Upper 256th Sectors (0 to 254)
0 0 0 1 0 Upper 128th Sectors (0 to 253)
0 0 0 1 1 Upper 64th Sectors (0 to 251)
0 0 1 0 0 Upper 32th Sectors (0 to 247)
128Mb, Multiple I/O Serial Flash Memory
Device Protection
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Table 5: Protected Area Sizes – Upper Area (Continued)
Note 1 applies to the entire table
Status Register Content Memory Content
Top/
Bottom
Bit BP3 BP2 BP1 BP0 Protected Area Unprotected Area
0 0 1 0 1 Upper 16nd Sectors (0 to 239)
0 0 1 1 0 Upper 8th Sectors (0 to 223)
0 0 1 1 1 Upper quarter Sectors (0 to 191)
0 1 0 0 0 Upper half Sectors (0 to 127)
0 1 0 0 1 All sectors None
0 1 0 1 0 All sectors None
0 1 0 1 1 All sectors None
0 1 1 0 0 All sectors None
0 1 1 0 1 All sectors None
0 1 1 1 0 All sectors None
0 1 1 1 1 All sectors None
Note: 1. See the Status Register for details on the top/bottom bit and the BP 3:0 bits.
Table 6: Protected Area Sizes – Lower Area
Note 1 applies to the entire table
Status Register Content Memory Content
Top/
Bottom
Bit BP3 BP2 BP1 BP0 Protected Area Unprotected Area
1 0 0 0 0 None All sectors
1 0 0 0 1 Lower 256th Sectors (1 to 255)
1 0 0 1 0 Lower 128th Sectors (2 to 255)
1 0 0 1 1 Lower 64th Sectors (4 to 255)
1 0 1 0 0 Lower 32th Sectors (8 to 255)
1 0 1 0 1 Lower 16nd Sectors (16 to 255)
1 0 1 1 0 Lower 8th Sectors (32 to 255)
1 0 1 1 1 Lower quarter Sectors (64 to 255)
1 1 0 0 0 Lower half Sectors (128 to 255)
1 1 0 0 1 All sectors None
1 1 0 1 0 All sectors None
1 1 0 1 1 All sectors None
1 1 1 0 0 All sectors None
1 1 1 0 1 All sectors None
1 1 1 1 0 All sectors None
128Mb, Multiple I/O Serial Flash Memory
Device Protection
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Table 6: Protected Area Sizes – Lower Area (Continued)
Note 1 applies to the entire table
Status Register Content Memory Content
Top/
Bottom
Bit BP3 BP2 BP1 BP0 Protected Area Unprotected Area
1 1 1 1 1 All sectors None
Note: 1. See the Status Register for details on the top/bottom bit and the BP 3:0 bits.
128Mb, Multiple I/O Serial Flash Memory
Device Protection
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Serial Peripheral Interface Modes
The device can be driven by a microcontroller while its serial peripheral interface is in
either of the two modes shown here. The difference between the two modes is the clock
polarity when the bus master is in standby mode and not transferring data. Input data is
latched in on the rising edge of the clock, and output data is available from the falling
edge of the clock.
Table 7: SPI Modes
Note 1 applies to the entire table
SPI Modes Clock Polarity
CPOL = 0, CPHA = 0 C remains at 0 for (CPOL = 0, CPHA = 0)
CPOL = 1, CPHA = 1 C remains at 1 for (CPOL = 1, CPHA = 1)
Note: 1. The listed SPI modes are supported in extended, dual, and quad SPI protocols.
Shown below is an example of three memory devices in extended SPI protocol in a sim-
ple connection to an MCU on an SPI bus. Because only one device is selected at a time,
that one device drives DQ1, while the other devices are High-Z.
Resistors ensure the device is not selected if the bus master leaves S# High-Z. The bus
master might enter a state in which all input/output is High-Z simultaneously, such as
when the bus master is reset. Therefore, the serial clock must be connected to an exter-
nal pull-down resistor so that S# is pulled HIGH while the serial clock is pulled LOW.
This ensures that S# and the serial clock are not HIGH simultaneously and that tSHCH
is met. The typical resistor value of 100kΩ, assuming that the time constant R × Cp (Cp =
parasitic capacitance of the bus line), is shorter than the time the bus master leaves the
SPI bus in High-Z.
Example: Cp = 50pF, that is R × Cp = 5μs. The application must ensure that the bus mas-
ter never leaves the SPI bus High-Z for a time period shorter than 5μs. W# and HOLD#
should be driven either HIGH or LOW, as appropriate.
128Mb, Multiple I/O Serial Flash Memory
Serial Peripheral Interface Modes
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Figure 6: Bus Master and Memory Devices on the SPI Bus
SPI bus master
SPI memory
device
SDO
SDI
SCK
C
DQ1 DQ0
SPI memory
device
C
DQ1 DQ0
SPI memory
device
C
DQ1 DQ0
S#
CS3 CS2 CS1
SPI interface:
(CPOL, CPHA) =
(0, 0) or (1, 1)
W# HOLD# S# W# HOLD# S# W# HOLD#
R R R
VCC
VCC VCC VCC
VSS
VSS VSS VSS
R
Figure 7: SPI Modes
C
C
DQ0
DQ1
CPHA
0
1
CPOL
0
1
MSB
MSB
128Mb, Multiple I/O Serial Flash Memory
Serial Peripheral Interface Modes
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SPI Protocols
Table 8: Extended, Dual, and Quad SPI Protocols
Protocol
Name
Com-
mand
Input
Address
Input
Data
Input/Output Description
Extended DQ0 Multiple DQn
lines, depending
on the command
Multiple DQn
lines, depending
on the command
Device default protocol from the factory. Additional com-
mands extend the standard SPI protocol and enable address
or data transmission on multiple DQn lines.
Dual DQ[1:0] DQ[1:0] DQ[1:0] Volatile selectable: When the enhanced volatile configu-
ration register bit 6 is set to 0 and bit 7 is set to 1, the de-
vice enters the dual SPI protocol immediately after the
WRITE ENHANCED VOLATILE CONFIGURATION REGISTER
command. The device returns to the default protocol after
the next power-on. In addition, the device can return to de-
fault protocol using the rescue sequence or through new
WRITE ENHANCED VOLATILE CONFIGURATION REGISTER
command, without power-off or power-on.
Nonvolatile selectable: When nonvolatile configuration
register bit 2 is set, the device enters the dual SPI protocol
after the next power-on. Once this register bit is set, the de-
vice defaults to the dual SPI protocol after all subsequent
power-on sequences until the nonvolatile configuration
register bit is reset to 1.
Quad1DQ[3:0] DQ[3:0] DQ[3:0] Volatile selectable: When the enhanced volatile configu-
ration register bit 7 is set to 0, the device enters the quad
SPI protocol immediately after the WRITE ENHANCED VOL-
ATILE CONFIGURATION REGISTER command. The device re-
turns to the default protocol after the next power-on. In ad-
dition, the device can return to default protocol using the
rescue sequence or through new WRITE ENHANCED VOLA-
TILE CONFIGURATION REGISTER command, without power-
off or power-on.
Nonvolatile selectable: When nonvolatile configuration
register bit 3 is set to 0, the device enters the quad SPI pro-
tocol after the next power-on. Once this register bit is set,
the device defaults to the quad SPI protocol after all subse-
quent power-on sequences until the nonvolatile configura-
tion register bit is reset to 1.
Note: 1. In quad SPI protocol, all command/address input and data I/O are transmitted on four
lines except during a PROGRAM and ERASE cycle performed with VPP. In this case, the
device enters the extended SPI protocol to temporarily allow the application to perform
a PROGRAM/ERASE SUSPEND operation or to check the write-in-progress bit in the sta-
tus register or the program/erase controller bit in the flag status register. Then, when
VPP goes LOW, the device returns to the quad SPI protocol.
128Mb, Multiple I/O Serial Flash Memory
SPI Protocols
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Nonvolatile and Volatile Registers
The device features the following volatile and nonvolatile registers that users can access
to store device parameters and operating configurations:
• Status register
• Nonvolatile and volatile configuration registers
• Enhanced volatile configuration register
• Flag status register
• Lock register
Note: The lock register is defined in READ LOCK REGISTER Command.
In addition to these user-accessible registers, the working condition of memory is set by
an internal configuration register that is not directly accessible to users. As shown be-
low, parameters in the internal configuration register are loaded from the nonvolatile
configuration register during each device boot phase or power-on reset. In this sense,
then, the nonvolatile configuration register contains the default settings of memory.
Also, during the life of an application, each time a WRITE VOLATILE or ENHANCED
VOLATILE CONFIGURATION REGISTER command executes to set configuration pa-
rameters in these respective registers, these new settings are copied to the internal con-
figuration register. Therefore, memory settings can be changed in real time. However, at
the next power-on reset, the memory boots according to the memory settings defined
in the nonvolatile configuration register parameters.
Figure 8: Internal Configuration Register
Register download is executed only during
the power-on phase or after a reset,
overwriting configuration register settings
on the internal configuration register.
Register download is executed after a
WRITE VOLATILE OR ENHANCED VOLATILE
CONFIGURATION REGISTER command,
overwriting configuration register
settings on the internal configuration register.
Nonvolatile configuration register
Internal configuration
register
Device behavior
Volatile configuration register and
enhanced volatile configuration register
128Mb, Multiple I/O Serial Flash Memory
Nonvolatile and Volatile Registers
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Status Register
Table 9: Status Register Bit Definitions
Note 1 applies to entire table
Bit Name Settings Description Notes
7 Status register
write enable/disable
0 = Enabled
1 = Disabled
Nonvolatile bit: Used with the W#/VPP signal to enable or
disable writing to the status register.
2
5 Top/bottom 0 = Top
1 = Bottom
Nonvolatile bit: Determines whether the protected mem-
ory area defined by the block protect bits starts from the
top or bottom of the memory array.
3
6, 4:2 Block protect 3–0 See Protected Area
Sizes – Upper Area
and Lower Area
tables in Device
Protection
Nonvolatile bit: Defines memory to be software protec-
ted against PROGRAM or ERASE operations. When one or
more block protect bits is set to 1, a designated memory
area is protected from PROGRAM and ERASE operations.
3
1 Write enable latch 0 = Cleared (Default)
1 = Set
Volatile bit: The device always powers up with this bit
cleared to prevent inadvertent WRITE STATUS REGISTER,
PROGRAM, or ERASE operations. To enable these opera-
tions, the WRITE ENABLE operation must be executed first
to set this bit.
4
0 Write in progress 0 = Ready
1 = Busy
Volatile bit: Indicates if one of the following command cy-
cles is in progress:
WRITE STATUS REGISTER
WRITE NONVOLATILE CONFIGURATION REGISTER
PROGRAM
ERASE
4
Notes: 1. Bits can be read from or written to using READ STATUS REGISTER or WRITE STATUS REG-
ISTER commands, respectively.
2. The status register write enable/disable bit, combined with the W#/VPP signal as descri-
bed in the Signal Descriptions, provides hardware data protection for the device as fol-
lows: When the enable/disable bit is set to 1, and the W#/VPP signal is driven LOW, the
status register nonvolatile bits become read-only and the WRITE STATUS REGISTER oper-
ation will not execute. The only way to exit this hardware-protected mode is to drive
W#/VPP HIGH.
3. See Protected Area Sizes tables in Device Protection. The BULK ERASE command is exe-
cuted only if all bits are 0.
4. Volatile bits are cleared to 0 by a power cycle or reset.
128Mb, Multiple I/O Serial Flash Memory
Nonvolatile and Volatile Registers
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Nonvolatile and Volatile Configuration Registers
Table 10: Nonvolatile Configuration Register Bit Definitions
Note 1 applies to entire table
Bit Name Settings Description Notes
15:12 Number of
dummy clock
cycles
0000 (identical to 1111)
0001
0010
.
.
1101
1110
1111
Sets the number of dummy clock cycles subse-
quent to all FAST READ commands.
The default setting targets the maximum al-
lowed frequency and guarantees backward com-
patibility.
2, 3
11:9 XIP mode at
power-on re-
set
000 = XIP: Fast Read
001 = XIP: Dual Output Fast Read
010 = XIP: Dual I/O Fast Read
011 = XIP: Quad Output Fast Read
100 = XIP: Quad I/O Fast Read
101 = Reserved
110 = Reserved
111 = Disabled (Default)
Enables the device to operate in the selected XIP
mode immediately after power-on reset.
8:6 Output driver
strength
000 = Reserved
001 = 90 Ohms
010 = 60 Ohms
011 = 45 Ohms
100 = Reserved
101 = 20 Ohms
110 = 15 Ohms
111 = 30 (Default)
Optimizes impedance at VCC/2 output voltage.
5 Reserved X "Don't Care."
4 Reset/hold 0 = Disabled
1 = Enabled (Default)
Enables or disables hold or reset.
(Available on dedicated part numbers.)
3 Quad I/O pro-
tocol
0 = Enabled
1 = Disabled (Default, Extended SPI prot-
cocol)
Enables or disables quad I/O protocol. 4
2 Dual I/O pro-
tocol
0 = Enabled
1 = Disabled (Default, Extended SPI pro-
tocol)
Enables or disables dual I/O protocol. 4
1:0 Reserved X "Don't Care."
1:0 Reserved X "Don't Care."
1 Reserved X "Don't Care."
0 Lock
nonvolatile
configuration
register
0 = Disabled
1 = Enabled (Default)
When this bit is set to 0, the nonvolatile configu-
ration register becomes permanently write pro-
tected and any WRITE NONVOLATILE CONFIGU-
RATION REGISTER command is ignored.
Notes: 1. Settings determine device memory configuration after power-on. The device ships from
the factory with all bits erased to 1 (FFFFh). The register is read from or written to by
128Mb, Multiple I/O Serial Flash Memory
Nonvolatile and Volatile Registers
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READ NONVOLATILE CONFIGURATION REGISTER or WRITE NONVOLATILE CONFIGURA-
TION REGISTER commands, respectively.
2. The 0000 and 1111 settings are identical in that they both define the default state,
which is the maximum frequency of fc = 108 MHz. This ensures backward compatibility.
3. If the number of dummy clock cycles is insufficient for the operating frequency, the
memory reads wrong data. The number of cycles must be set according to and sufficient
for the clock frequency, which varies by the type of FAST READ command, as shown in
the Supported Clock Frequencies table.
4. If bits 2 and 3 are both set to 0, the device operates in quad I/O. When bits 2 or 3 are
reset to 0, the device operates in dual I/O or quad I/O respectively, after the next power-
on.
Table 11: Volatile Configuration Register Bit Definitions
Note 1 applies to entire table
Bit Name Settings Description Notes
7:4 Number of dum-
my clock cycles
0000 (identical to 1111)
0001
0010
.
.
1101
1110
1111
Sets the number of dummy clock cycles subsequent to
all FAST READ commands.
The default setting targets maximum allowed frequen-
cy and guarantees backward compatibility.
2, 3
3 XIP 0 = Enable
1 = Disable (default)
Enables or disables XIP. For device part numbers with
feature digit equal to 2 or 4, this bit is always "Don’t
Care," so the device operates in XIP mode without set-
ting this bit.
2 Reserved X = Default 0b = Fixed value.
1:0 Wrap 00 = 16-byte boundary
aligned
16-byte wrap: Output data wraps within an aligned 16-
byte boundary starting from the 3-byte address issued
after the command code.
4
01 = 32-byte boundary
aligned
32-byte wrap: Output data wraps within an aligned 32-
byte boundary starting from the 3-byte address issued
after the command code.
10 = 64-byte boundary
aligned
64-byte wrap: Output data wraps within an aligned 64-
byte boundary starting from the 3-byte address issued
after the command code.
11 = sequential (default) Continuous reading (default): All bytes are read se-
quentially.
Notes: 1. Settings determine the device memory configuration upon a change of those settings by
the WRITE VOLATILE CONFIGURATION REGISTER command. The register is read from or
written to by READ VOLATILE CONFIGURATION REGISTER or WRITE VOLATILE CONFIGU-
RATION REGISTER commands respectively.
2. The 0000 and 1111 settings are identical in that they both define the default state,
which is the maximum frequency of fc = 108 MHz. This ensures backward compatibility.
3. If the number of dummy clock cycles is insufficient for the operating frequency, the
memory reads wrong data. The number of cycles must be set according to and be suffi-
cient for the clock frequency, which varies by the type of FAST READ command, as
shown in the Supported Clock Frequencies table.
128Mb, Multiple I/O Serial Flash Memory
Nonvolatile and Volatile Registers
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4. See the Sequence of Bytes During Wrap table.
128Mb, Multiple I/O Serial Flash Memory
Nonvolatile and Volatile Registers
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Table 12: Sequence of Bytes During Wrap
Starting Address 16-Byte Wrap 32-Byte Wrap 64-Byte Wrap
0 0-1-2- . . . -15-0-1- . . 0-1-2- . . . -31-0-1- . . 0-1-2- . . . -63-0-1- . .
1 1-2- . . . -15-0-1-2- . . 1-2- . . . -31-0-1-2- . . 1-2- . . . -63-0-1-2- . .
15 15-0-1-2-3- . . . -15-0-1- . . 15-16-17- . . . -31-0-1- . . 15-16-17- . . . -63-0-1- . .
31 31-16-17- . . . -31-16-17- . . 31-0-1-2-3- . . . -31-0-1- . . 31-32-33- . . . -63-0-1- . .
63 63-48-49- . . . -63-48-49- . . 63-32-33- . . . -63-32-33- . . 63-0-1- . . . -63-0-1- . .
Table 13: Supported Clock Frequencies
Note 1 applies to entire table
Number of
Dummy
Clock Cycles FAST READ
DUAL OUTPUT
FAST READ
DUAL I/O FAST
READ
QUAD OUTPUT
FAST READ
QUAD I/O FAST
READ Unit
1 90 80 50 43 30
MHz
2 100 90 70 60 40
3 108 100 80 75 50
4 108 105 90 90 60
5 108 108 100 100 70
6 108 108 105 105 80
7 108 108 108 108 86
8 108 108 108 108 95
9 108 108 108 108 105
10 108 108 108 108 108
Note: 1. Values are guaranteed by characterization and not 100% tested in production.
Enhanced Volatile Configuration Register
Table 14: Enhanced Volatile Configuration Register Bit Definitions
Note 1 applies to entire table
Bit Name Settings Description Notes
7 Quad I/O protocol 0 = Enabled
1 = Disabled (Default,
extended SPI protocol)
Enables or disables quad I/O protocol. 2
6 Dual I/O protocol 0 = Enabled
1 = Disabled (Default,
extended SPI protocol)
Enables or disables dual I/O protocol. 2
5 Reserved X = Default 0b = Fixed value.
4 Reset/hold 0 = Disabled
1 = Enabled (Default)
Enables or disables hold or reset.
(Available on dedicated part numbers.)
128Mb, Multiple I/O Serial Flash Memory
Nonvolatile and Volatile Registers
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Table 14: Enhanced Volatile Configuration Register Bit Definitions (Continued)
Note 1 applies to entire table
Bit Name Settings Description Notes
3 VPP accelerator 0 = Enabled
1 = Disabled (Default)
Enables or disables VPP acceleration for QUAD
INPUT FAST PROGRAM and QUAD INPUT EX-
TENDED FAST PROGRAM OPERATIONS.
2:0 Output driver strength 000 = Reserved
001 = 90 Ohms
010 = 60 Ohms
011 = 45 Ohms
100 = Reserved
101 = 20 Ohms
110 = 15 Ohms
111 = 30 (Default)
Optimizes impedance at VCC/2 output voltage.
Notes: 1. Settings determine the device memory configuration upon a change of those settings by
the WRITE ENHANCED VOLATILE CONFIGURATION REGISTER command. The register is
read from or written to in all protocols by READ ENHANCED VOLATILE CONFIGURATION
REGISTER or WRITE ENHANCED VOLATILE CONFIGURATION REGISTER commands, respec-
tively.
2. If bits 6 and 7 are both set to 0, the device operates in quad I/O. When either bit 6 or 7 is
reset to 0, the device operates in dual I/O or quad I/O, respectively, following the next
WRITE ENHANCED VOLATILE CONFIGURATION command.
Flag Status Register
Table 15: Flag Status Register Bit Definitions
Note 1 applies to entire table
Bit Name Settings Description Notes
7 Program or
erase
controller
0 = Busy
1 = Ready
Status bit: Indicates whether a PROGRAM, ERASE,
WRITE STATUS REGISTER, or WRITE NONVOLATILE CON-
FIGURATION command cycle is in progress.
2, 3
6 Erase suspend 0 = Not in effect
1 = In effect
Status bit: Indicates whether an ERASE operation has
been or is going to be suspended.
3
5 Erase 0 = Clear
1 = Failure or protection error
Error bit: Indicates whether an ERASE operation has
succeeded or failed.
4, 5
4 Program 0 = Clear
1 = Failure or protection error
Error bit: Indicates whether a PROGRAM operation has
succeeded or failed. Also indicates an attempt to pro-
gram a 0 to a 1 when VPP = VPPH and the data pattern is
a multiple of 64 bits.
4, 5
3 VPP 0 = Enabled
1 = Disabled (Default)
Error bit: Indicates an invalid voltage on VPP during a
PROGRAM or ERASE operation.
4, 5
2 Program
suspend
0 = Not in effect
1 = In effect
Status bit: Indicates whether a PROGRAM operation
has been or is going to be suspended.
3
128Mb, Multiple I/O Serial Flash Memory
Nonvolatile and Volatile Registers
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Table 15: Flag Status Register Bit Definitions (Continued)
Note 1 applies to entire table
Bit Name Settings Description Notes
1 Protection 0 = Clear
1 = Failure or protection error
Error bit: Indicates whether an ERASE or a PROGRAM
operation has attempted to modify the protected array
sector, or whether a PROGRAM operation has attemp-
ted to access the locked OTP space.
4, 5
0 Reserved Reserved Reserved
Notes: 1. Register bits are read by READ FLAG STATUS REGISTER command. All bits are volatile.
2. These program/erase controller settings apply only to PROGRAM or ERASE command cy-
cles in progress, or to the specific WRITE command cycles in progress as shown here.
3. Status bits are reset automatically.
4. Error bits must be reset by CLEAR FLAG STATUS REGISTER command.
5. Typical errors include operation failures and protection errors caused by issuing a com-
mand before the error bit has been reset to 0.
128Mb, Multiple I/O Serial Flash Memory
Nonvolatile and Volatile Registers
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Command Definitions
Table 16: Command Set
Note 1 applies to entire table
Command Code Extended
Dual
I/O
Quad
I/O
Data
Bytes Notes
RESET Operations
RESET ENABLE 66h Yes Yes Yes 0 2
RESET MEMORY 99h
IDENTIFICATION Operations
READ ID 9E/9Fh Yes No No 1 to 20 2
MULTIPLE I/O READ ID AFh No Yes Yes 1 to 3 2
READ SERIAL FLASH
DISCOVERY PARAMETER
5Ah Yes Yes Yes 1 to ∞3
READ Operations
READ 03h Yes No No 1 to ∞4
FAST READ 0Bh Yes Yes Yes 5
DUAL OUTPUT FAST READ 3Bh Yes Yes No 1 to ∞5
DUAL INPUT/OUTPUT FAST READ 0Bh
3Bh
BBh
Yes Yes No 5, 6
QUAD OUTPUT FAST READ 6Bh Yes No Yes 1 to ∞5
QUAD INPUT/OUTPUT FAST READ 0Bh
6Bh
EBh
Yes No Yes 5, 7
WRITE Operations
WRITE ENABLE 06h Yes Yes Yes 0 2
WRITE DISABLE 04h
REGISTER Operations
READ STATUS REGISTER 05h Yes Yes Yes 1 to ∞2
WRITE STATUS REGISTER 01h 1 2, 8
READ LOCK REGISTER E8h Yes Yes Yes 1 to ∞4
WRITE LOCK REGISTER E5h 1 4, 8
READ FLAG STATUS REGISTER 70h Yes Yes Yes 1 to ∞2
CLEAR FLAG STATUS REGISTER 50h 0
READ NONVOLATILE
CONFIGURATION REGISTER
B5h Yes Yes Yes 2 2
WRITE NONVOLATILE
CONFIGURATION REGISTER
B1h 2, 8
READ VOLATILE
CONFIGURATION REGISTER
85h Yes Yes Yes 1 to ∞2
WRITE VOLATILE
CONFIGURATION REGISTER
81h 1 2, 8
128Mb, Multiple I/O Serial Flash Memory
Command Definitions
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Table 16: Command Set (Continued)
Note 1 applies to entire table
Command Code Extended
Dual
I/O
Quad
I/O
Data
Bytes Notes
READ ENHANCED VOLATILE
CONFIGURATION REGISTER
65h Yes Yes Yes 1 to ∞2
WRITE ENHANCED VOLATILE
CONFIGURATION REGISTER
61h 1 2, 8
PROGRAM Operations
PAGE PROGRAM 02h Yes Yes Yes 1 to 256 4, 8
DUAL INPUT FAST PROGRAM A2h Yes Yes No 1 to 256 4, 8
EXTENDED DUAL INPUT
FAST PROGRAM
02h
A2h
D2h
Yes Yes No 4, 6, 8
QUAD INPUT FAST PROGRAM 32h Yes No Yes 1 to 256 4, 8
EXTENDED QUAD INPUT
FAST PROGRAM
02h
32h
12h
Yes No Yes 4, 7, 8
ERASE Operations
SUBSECTOR ERASE 20h Yes Yes Yes 0 4, 8
SECTOR ERASE D8h 4, 8
BULK ERASE C7h 2, 8
PROGRAM/ERASE RESUME 7Ah Yes Yes Yes 0 2, 8
PROGRAM/ERASE SUSPEND 75h
ONE-TIME PROGRAMMABLE (OTP) Operations
READ OTP ARRAY 4Bh Yes Yes Yes 1 to 64 5
PROGRAM OTP ARRAY 42h 4
Deep Power-Down
Deep power-down B9h Yes Yes Yes 0 2
Release from deep power-down ABh
Notes: 1. Yes in the protocol columns indicates that the command is supported and has the same
functionality and command sequence as other commands marked Yes.
2. Address bytes = 0. Dummy clock cycles = 0.
3. Address bytes = 3. Dummy clock cycles default = 8.
4. Address bytes default = 3. Dummy clock cycles = 0.
5. Address bytes default = 3. Dummy clock cycles default = 8. Dummy clock cycles default =
10 (when quad SPI protocol is enabled). Dummy clock cycles is configurable by the user.
6. When the device is in dual SPI protocol, the command can be entered with any of these
three codes. The different codes enable compatibility between dual SPI and extended
SPI protocols.
7. When the device is in quad SPI protocol, the command can be entered with any of these
three codes. The different codes enable compatibility between quad SPI and extended
SPI protocols.
8. The WRITE ENABLE command must be issued first before this command can be execu-
ted.
128Mb, Multiple I/O Serial Flash Memory
Command Definitions
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READ REGISTER and WRITE REGISTER Operations
READ STATUS REGISTER or FLAG STATUS REGISTER Command
To initiate a READ STATUS REGISTER command, S# is driven LOW. For extended SPI
protocol, the command code is input on DQ0, and output on DQ1. For dual SPI proto-
col, the command code is input on DQ[1:0], and output on DQ[1:0]. For quad SPI proto-
col, the command code is input on DQ[3:0], and is output on DQ[3:0]. The operation is
terminated by driving S# HIGH at any time during data output.
The status register can be read continuously and at any time, including during a PRO-
GRAM, ERASE, or WRITE operation.
The flag status register can be read continuously and at any time, including during an
ERASE or WRITE operation.
If one of these operations is in progress, checking the write in progress bit or P/E con-
troller bit is recommended before executing the command.
Figure 9: READ REGISTER Command
High-Z
DQ1
7 8 910 11 12 13 14 15
0
C
MSB
DQ0
LSB
Command
3 4 5 6 7
0
C
MSB
DQ[1:0]
LSB
Command
MSB
DOUT DOUT DOUT DOUT DOUT
LSB
Extended
MSB
DOUT DOUT DOUT DOUT DOUT
LSB
DOUT DOUT DOUT DOUT
Dual
Quad 1 2 3
0
C
MSB
DQ[3:0]
LSB
Command
MSB
DOUT DOUT DOUT
LSB
Don’t Care
Notes: 1. Supports all READ REGISTER commands except READ LOCK REGISTER.
2. A READ NONVOLATILE CONFIGURATION REGISTER operation will output data starting
from the least significant byte.
READ NONVOLATILE CONFIGURATION REGISTER Command
To execute a READ NONVOLATILE CONFIGURATION REGISTER command, S# is driv-
en LOW. For extended SPI protocol, the command code is input on DQ0, and output on
DQ1. For dual SPI protocol, the command code is input on DQ[1:0], and output on
128Mb, Multiple I/O Serial Flash Memory
READ REGISTER and WRITE REGISTER Operations
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DQ[1:0]. For quad SPI protocol, the command code is input on DQ[3:0], and is output
on DQ[3:0]. The operation is terminated by driving S# HIGH at any time during data
output.
The nonvolatile configuration register can be read continuously. After all 16 bits of the
register have been read, a 0 is output. All reserved fields output a value of 1.
READ VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command
To execute a READ VOLATILE CONFIGURATION REGISTER command or a READ EN-
HANCED VOLATILE CONFIGURATION REGISTER command, S# is driven LOW. For ex-
tended SPI protocol, the command code is input on DQ0, and output on DQ1. For dual
SPI protocol, the command code is input on DQ[1:0], and output on DQ[1:0]. For quad
SPI protocol, the command code is input on DQ[3:0], and is output on DQ[3:0]. The op-
eration is terminated by driving S# HIGH at any time during data output.
When the register is read continuously, the same byte is output repeatedly.
WRITE STATUS REGISTER Command
To issue a WRITE STATUS REGISTER command, the WRITE ENABLE command must be
executed to set the write enable latch bit to 1. S# is driven LOW and held LOW until the
eighth bit of the last data byte has been latched in, after which it must be driven HIGH.
For extended SPI protocol, the command code is input on DQ0, followed by the data
bytes. For dual SPI protocol, the command code is input on DQ[1:0], followed by the da-
ta bytes. For quad SPI protocol, the command code is input on DQ[3:0], followed by the
data bytes. When S# is driven HIGH, the operation, which is self-timed, is initiated; its
duration is tW.
This command is used to write new values to status register bits 7:2, enabling software
data protection. The status register can also be combined with the W#/VPP signal to
provide hardware data protection. The WRITE STATUS REGISTER command has no ef-
fect on status register bits 1:0.
When the operation is in progress, the write in progress bit is set to 1. The write enable
latch bit is cleared to 0, whether the operation is successful or not. The status register
and flag status register can be polled for the operation status. When the operation com-
pletes, the write in progress bit is cleared to 0, whether the operation is successful or
not.
128Mb, Multiple I/O Serial Flash Memory
READ REGISTER and WRITE REGISTER Operations
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Figure 10: WRITE REGISTER Command
7 8 9 10 11 12 13 14 15
0
C
MSB
DQ0
LSB
Command
3 4 5 6 7
0
C
MSB
DQ[1:0]
LSB
Command
MSB
DIN DIN DIN DIN DIN
LSB
Extended
MSB
LSB
DIN DIN DIN DIN DIN
DIN DIN DIN DIN
Dual
Quad 1 2 3
0
C
MSB
DQ[3:0]
LSB
Command
MSB
DIN DIN DIN
LSB
Notes: 1. Supports all WRITE REGISTER commands except WRITE LOCK REGISTER.
2. Waveform must be extended for each protocol, to 23 for extended, 11 for dual, and 5
for quad.
3. A WRITE NONVOLATILE CONFIGURATION REGISTER operation requires data being sent
starting from least significant byte.
WRITE NONVOLATILE CONFIGURATION REGISTER Command
To execute the WRITE NONVOLATILE CONFIGURATION REGISTER command, the
WRITE ENABLE command must be executed to set the write enable latch bit to 1. S# is
driven LOW and held LOW until the 16th bit of the last data byte has been latched in,
after which it must be driven HIGH. For extended SPI protocol, the command code is
input on DQ0, followed by two data bytes. For dual SPI protocol, the command code is
input on DQ[1:0], followed by the data bytes. For quad SPI protocol, the command code
is input on DQ[3:0], followed by the data bytes. When S# is driven HIGH, the operation,
which is self-timed, is initiated; its duration is tWNVCR.
When the operation is in progress, the write in progress bit is set to 1. The write enable
latch bit is cleared to 0, whether the operation is successful or not. The status register
and flag status register can be polled for the operation status. When the operation com-
pletes, the write in progress bit is cleared to 0, whether the operation is successful or
not. If S# is not driven HIGH, the command is not executed, flag status register error
bits are not set, and the write enable latch remains set to 1.
WRITE VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command
To execute a WRITE VOLATILE CONFIGURATION REGISTER command or a WRITE
ENHANCED VOLATILE CONFIGURATION REGISTER command, the WRITE ENABLE
command must be executed to set the write enable latch bit to 1. S# is driven LOW and
held LOW until the eighth bit of the last data byte has been latched in, after which it
must be driven HIGH. For extended SPI protocol, the command code is input on DQ0,
followed by the data bytes. For dual SPI protocol, the command code is input on
DQ[1:0], followed by the data bytes. For quad SPI protocol, the command code is input
on DQ[3:0], followed by the data bytes.
128Mb, Multiple I/O Serial Flash Memory
READ REGISTER and WRITE REGISTER Operations
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If S# is not driven HIGH, the command is not executed, the flag status register error bits
are not set and the write enable latch remains set to 1. Reserved bits are not affected by
this command.
READ LOCK REGISTER Command
To execute the READ LOCK REGISTER command, S# is driven LOW. For extended SPI
protocol, the command code is input on DQ0, followed by three address bytes that
point to a location in the sector. For dual SPI protocol, the command code is input on
DQ[1:0]. For quad SPI protocol, the command code is input on DQ[3:0]. Each address
bit is latched in during the rising edge of the clock. For extended SPI protocol, data is
shifted out on DQ1 at a maximum frequency fC during the falling edge of the clock. For
dual SPI protocol, data is shifted out on DQ[1:0], and for quad SPI protocol, data is shif-
ted out on DQ[3:0]. The operation is terminated by driving S# HIGH at any time during
data output.
When the register is read continuously, the same byte is output repeatedly. Any READ
LOCK REGISTER command that is executed while an ERASE, PROGRAM, or WRITE cy-
cle is in progress is rejected with no affect on the cycle in progress.
Table 17: Lock Register
Note 1 applies to entire table
Bit Name Settings Description
7:2 Reserved 0 Bit values are 0.
1 Sector lock down 0 = Cleared (Default)
1 = Set
Volatile bit: the device always powers-up with this bit cleared,
which means sector lock down and sector write lock bits can be
set.
When this bit set, neither of the lock register bits can be written
to until the next power cycle.
0 Sector write lock 0 = Cleared (Default)
1 = Set
Volatile bit: the device always powers-up with this bit cleared,
which means that PROGRAM and ERASE operations in this sector
can be executed and sector content modified.
When this bit is set, PROGRAM and ERASE operations in this sec-
tor will not be executed.
Note: 1. Sector lock register bits 1:0 are written to by the WRITE LOCK REGISTER command. The
command will not execute unless the sector lock down bit is cleared.
128Mb, Multiple I/O Serial Flash Memory
READ REGISTER and WRITE REGISTER Operations
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Figure 11: READ LOCK REGISTER Command
MSB
DQ[0]
LSB
Command
A[MAX]
A[MIN]
7 8 Cx
0
C
3 4 Cx
0
C
MSB
DQ[1:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DOUT DOUT DOUT DOUT DOUT
LSB
1 2 Cx
0
C
MSB
DQ[3:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DOUT DOUT DOUT
LSB
Extended
Dual
Quad
High-Z
DQ1
MSB
DOUT DOUT DOUT DOUT DOUT
LSB
DOUT DOUT DOUT DOUT
Don’t Care
Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1).
For dual SPI protocol, Cx = 3 + ((A[MAX] + 1)/2).
For quad SPI protocol, Cx = 1 + ((A[MAX] + 1)/4).
WRITE LOCK REGISTER Command
To initiate the WRITE LOCK REGISTER command, the WRITE ENABLE command must
be executed to set the write enable latch bit to 1. S# is driven LOW and held LOW until
the eighth bit of the last data byte has been latched in, after which it must be driven
HIGH. The command code is input on DQn, followed by three address bytes that point
to a location in the sector, and then one data byte that contains the desired settings for
lock register bits 0 and 1. Each address bit is latched in during the rising edge of the
clock.
When execution is complete, the write enable latch bit is cleared within tSHSL2 and no
error bits are set. Because lock register bits are volatile, change to the bits is immediate.
WRITE LOCK REGISTER can be executed when an ERASE SUSPEND operation is in ef-
fect. If S# is not driven HIGH, the command is not executed, flag status register error
bits are not set, and the write enable latch remains set to 1.
128Mb, Multiple I/O Serial Flash Memory
READ REGISTER and WRITE REGISTER Operations
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Figure 12: WRITE LOCK REGISTER Command
7 8 Cx
0
C
MSB
DQ0
LSB
Command
A[MAX]
A[MIN]
MSB
DIN DIN DIN DIN DIN
LSB
DIN DIN DIN DIN
3 4 Cx
0
C
MSB
DQ[1:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DIN DIN DIN DIN DIN
LSB
1 2 Cx
0
C
MSB
DQ[3:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DIN DIN DIN
LSB
Extended
Dual
Quad
Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1).
For dual SPI protocol, Cx = 3 + ((A[MAX] + 1)/2).
For quad SPI protocol, Cx = 1 + ((A[MAX] + 1)/4).
CLEAR FLAG STATUS REGISTER Command
To execute the CLEAR FLAG STATUS REGISTER command and reset the error bits
(erase, program, and protection), S# is driven LOW. For extended SPI protocol, the com-
mand code is input on DQ0. For dual SPI protocol, the command code is input on
DQ[1:0]. For quad SPI protocol, the command code is input on DQ[3:0]. The operation
is terminated by driving S# HIGH at any time.
128Mb, Multiple I/O Serial Flash Memory
READ REGISTER and WRITE REGISTER Operations
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READ IDENTIFICATION Operations
READ ID and MULTIPLE I/O READ ID Commands
To execute the READ ID or MULTIPLE I/O READ ID commands, S# is driven LOW and
the command code is input on DQn. The device outputs the information shown in the
tables below. If an ERASE or PROGRAM cycle is in progress when the command is exe-
cuted, the command is not decoded and the command cycle in progress is not affected.
When S# is driven HIGH, the device goes to standby. The operation is terminated by
driving S# HIGH at any time during data output.
Table 18: Data/Address Lines for READ ID and MULTIPLE I/O READ ID Commands
Command Name Data In Data Out
Unique ID
is Output Extended Dual Quad
READ ID DQ0 DQ0 Yes Yes No No
MULTIPLE I/O READ ID DQ[3:0] DQ[1:0] No No Yes Yes
Note: 1. Yes in the protocol columns indicates that the command is supported and has the same
functionality and command sequence as other commands marked Yes.
Table 19: Read ID Data Out
Size
(Bytes) Name Content Value Assigned by
1Manufacturer ID 20h JEDEC
2Device ID
Memory Type BBh Manufacturer
Memory Capacity 18h (128Mb)
17 Unique ID
1 Byte: Length of data to follow 10h Factory
2 Bytes: Extended device ID and device
configuration information
ID and information such as uniform
architecture, and HOLD
or RESET functionality
14 Bytes: Customized factory data Unique ID code (UID) (n read-only bytes)
Note: 1. The 17 bytes of information in the unique ID is read by the READ ID command, but can-
not be read by the MULTIPLE I/O READ ID command.
Table 20: Extended Device ID, First Byte
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
Reserved Reserved 1 = Reserved
0 = Standard BP
scheme
Volatile configuration
register, XIP bit setting:
0 = Required
1 = Not required
HOLD#/RESET#:
0 = HOLD
1 = RESET
Addressing:
0 = by byte
Architecture:
00 = Uniform
128Mb, Multiple I/O Serial Flash Memory
READ IDENTIFICATION Operations
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Figure 13: READ ID and MULTIPLE I/O Read ID Commands
UID
Device
identification
Manufacturer
identification
High-Z
DQ1
MSB MSB
DOUT DOUT DOUT DOUT
LSB
LSB
7 8 15 16 32
31
0
C
MSB
DQ0
LSB
Command
MSB
DOUT DOUT
LSB
Extended (READ ID)
Dual (MULTIPLE I/O READ ID )
Quad (MULTIPLE I/O READ ID )
Don’t Care
3 4 7815
0
C
MSB
DQ[1:0]
LSB
Command
Device
identification
Manufacturer
identification
MSB MSB
DOUT DOUT DOUT DOUT
LSB
LSB
1 2 347
0
C
MSB
DQ[3:0]
LSB
Command
Device
identification
Manufacturer
identification
MSB MSB
DOUT DOUT DOUT DOUT
LSB
LSB
Note: 1. The READ ID command is represented by the extended SPI protocol timing shown first.
The MULTIPLE I/O READ ID command is represented by the dual and quad SPI protocols
are shown below extended SPI protocol.
READ SERIAL FLASH DISCOVERY PARAMETER Command
To execute READ SERIAL FLASH DISCOVERY PARAMETER command, S# is driven
LOW. The command code is input on DQ0, followed by three address bytes and 8 dum-
my clock cycles in extended or dual SPI protocol, 10 dummy clock cycles in quad SPI
protocol. The device outputs the information starting from the specified address. When
the 2048-byte boundary is reached, the data output wraps to address 0 of the serial
Flash discovery parameter table. The operation is terminated by driving S# HIGH at any
time during data output.
The operation always executes in continuous mode so the read burst wrap setting in the
volatile configuration register does not apply.
Note: Data to be stored in the serial Flash discovery parameter area is still in the defini-
tion phase.
128Mb, Multiple I/O Serial Flash Memory
READ IDENTIFICATION Operations
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Table 21: Serial Flash Discovery Parameter – Header Structure
Description
Byte
Address Bits
Data
128Mb
SFDP signature 00h 7:0 53h
01h 7:0 46h
02h 7:0 44h
03h 7:0 50h
SFDP revision Minor 04h 7:0 00h
Major 05h 7:0 01h
Number of parameter headers 06h 7:0 00h
Unused 07h 7:0 FFh
Parameter ID (0) 08h 7:0 00h
Parameter minor revision 09h 7:0 00h
Parameter major revision 0Ah 7:0 01h
Parameter length (in DW) 0Bh 7:0 09h
Parameter table pointer 0Ch 7:0 30h
0Dh 7:0 00h
0Eh 7:0 00h
Unused 0Fh 7:0 FFh
Note: 1. Locations 10h to 2Fh contain FFh.
Table 22: Parameter ID
Description
Byte
Address Bits
Data
128Mb
Minimum block/sector erase sizes 30h 1:0 01b
Write granularity 2 1
WRITE ENABLE command required for writing to volatile status
registers
3 0
WRITE ENABLE command code select for writing to volatile status
register
4 0
Unused 7:5 111b
4KB ERASE command code 31h 7:0 20h
Supports 1-1-2 fast read 32h 0 1
Address bytes 2:1 00b
Supports double transfer rate clocking 3 0
Supports 1-2-2 fast read 4 1
Supports 1-4-4 fast read 5 1
Supports 1-1-4 fast read 6 1
Unused 7 1
Reserved 33h 7:0 FFh
128Mb, Multiple I/O Serial Flash Memory
READ IDENTIFICATION Operations
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Table 22: Parameter ID (Continued)
Description
Byte
Address Bits
Data
128Mb
Flash size (in bits) 34h 7:0 FFh
35h 7:0 FFh
36h 7:0 FFh
37h 7:0 07h
1-4-4 FAST READ DUMMY cycle count 38h 4:0 01001b
1-4-4 fast read number of mode bits 7:5 001b
1-4-4 FAST READ command code 39h 7:0 EBh
1-1-4 FAST READ DUMMY cycle count 3Ah 4:0 00111b
1-1-4 fast read number of mode bits 7:5 001b
1-1-4 FAST READ command code 3Bh 7:0 6Bh
1-1-2 FAST READ DUMMY cycle count 3Ch 4:0 01000b
1-1-2 fast read number of mode bits 7:5 000b
1-1-2 FAST READ command code 3Dh 7:0 3Bh
1-2-2 FAST READ DUMMY cycle count 3Eh 4:0 00111b
1-2-2 fast read number of mode bits 7:5 001b
1-2-2 Instruction opcode 3Fh 7:0 BBh
Supports 2-2-2 fast read 40h 0 1
Reserved 3:1 111b
Supports 4-4-4 fast read 4 1
Reserved 7:5 111b
Reserved 43:41h FFFFFFh FFFFFFh
Reserved 45:44h FFFFh FFFFh
2-2-2 FAST READ DUMMY cycle count 46h 4:0 00111b
2-2-2 fast read number of mode bits 7:5 001b
2-2-2 FAST READ command code 47h 7:0 BBh
Reserved 49:48h FFFFh FFFFh
4-4-4 FAST READ DUMMY cycle count 4Ah 4:0 01001b
4-4-4 fast read number of mode bits 7:5 001b
4-4-4 FAST READ command code 4Bh 7:0 EBh
Sector type 1 size 4Ch 7:0 0Ch
Sector type 1 command code 4Dh 7:0 20h
Sector type 2 size 4Eh 7:0 10h
Sector type 2 command code 4Fh 7:0 D8h
Sector type 3 size 50h 7:0 00h
Sector type 3 command code 51h 7:0 00h
Sector type 4 size 52h 7:0 00h
Sector type 4 command code 53h 7:0 00h
128Mb, Multiple I/O Serial Flash Memory
READ IDENTIFICATION Operations
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READ MEMORY Operations
The device supports default reading and writing to an A[MAX:MIN] of A[23:0].
To execute READ MEMORY commands, S# is driven LOW. The command code is input
on DQn, followed by input on DQn of three address bytes. Each address bit is latched in
during the rising edge of the clock. The addressed byte can be at any location, and the
address automatically increments to the next address after each byte of data is shifted
out; therefore, the entire memory can be read with a single command. The operation is
terminated by driving S# HIGH at any time during data output.
Table 23: Command/Address/Data Lines for READ MEMORY Commands
Note 1 applies to entire table
Command Name
READ
FAST
READ
DUAL OUTPUT
FAST READ
DUAL
INPUT/OUTPUT
FAST READ
QUAD OUTPUT
FAST READ
QUAD
INPUT/OUTPUT
FAST READ
03 0B 3B BB 6B EB
Extended SPI Protocol
Supported Yes Yes Yes Yes Yes Yes
Command Input DQ0 DQ0 DQ0 DQ0 DQ0 DQ0
Address Input DQ0 DQ0 DQ0 DQ[1:0] DQ0 DQ[3:0]
Data Output DQ1 DQ1 DQ[1:0] DQ[1:0] DQ[3:0] DQ[3:0]
Dual SPI Protocol
Supported No Yes Yes Yes No No
Command Input – DQ[1:0] DQ[1:0] DQ[1:0] – –
Address Input – DQ[1:0] DQ[1:0] DQ[1:0] – –
Data Output – DQ[1:0] DQ[1:0] DQ[1:0] – –
Quad SPI Protocol
Supported No Yes No No Yes Yes
Command Input – DQ[3:0] – – DQ[3:0] DQ[3:0]
Address Input – DQ[3:0] – – DQ[3:0] DQ[3:0]
Data Output – DQ[3:0] – – DQ[3:0] DQ[3:0]
Notes: 1. Yes in the "Supported" row for each protocol indicates that the command in that col-
umn is supported; when supported, a command's functionality is identical for the entire
column regardless of the protocol. For example, a FAST READ functions the same for all
three protocols even though its data is input/output differently depending on the pro-
tocol.
2. FAST READ is similar to READ, but requires dummy clock cycles following the address
bytes and can operate at a higher frequency (fC).
128Mb, Multiple I/O Serial Flash Memory
READ MEMORY Operations
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Figure 14: READ Command
Don’t Care
MSB
DQ[0]
LSB
Command
A[MAX]
A[MIN]
7 8 Cx
0
C
Extended
High-Z
DQ1
MSB
DOUT DOUT DOUT DOUT DOUT
LSB
DOUT DOUT DOUT DOUT
Note: 1. Cx = 7 + (A[MAX] + 1).
Figure 15: FAST READ Command
7 8 Cx
0
C
MSB
DQ0
LSB
Command
A[MAX]
A[MIN]
3 4 Cx
0
C
MSB
DQ[1:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DOUT DOUT DOUT DOUT DOUT
LSB
Dummy cycles
1 2 Cx
0
C
MSB
DQ[3:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DOUT DOUT DOUT
LSB
Dummy cycles
Extended
MSB
DOUT DOUT DOUT DOUT DOUT
LSB
DOUT DOUT DOUT DOUT
Dummy cycles
Dual
Quad
DQ1 High-Z
Don’t Care
Note: 1. For extended protocol, Cx = 7 + (A[MAX] + 1); For dual protocol, Cx = 3 + (A[MAX] + 1)/2;
For quad protocol, Cx = 1 + (A[MAX] + 1)/4.
128Mb, Multiple I/O Serial Flash Memory
READ MEMORY Operations
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Figure 16: DUAL OUTPUT FAST READ
7 8 Cx
0
C
MSB
DQ0
LSB
Command DOUT
LSB
DQ1 DOUT
A[MAX]
High-Z
A[MIN]
DOUT
MSB
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
Dummy cycles
DQ[1:0]
Dual
Extended
3 4 Cx
0
C
MSB
LSB
Command
A[MAX]
A[MIN]
MSB
DOUT DOUT DOUT DOUT DOUT
LSB
Dummy cycles
Note: 1. Cx = 7 + (A[MAX] + 1).
Figure 17: DUAL INPUT/OUTPUT FAST READ Command
7 8 Cx
0
C
MSB
DQ0
LSB
Command DOUT
LSB
DQ1 DOUT
High-Z
A[MIN]
DOUT
MSB
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
A[MAX]
Dummy cycles
3 4 Cx
0
C
MSB
DQ[1:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DOUT DOUT DOUT DOUT DOUT
LSB
Dummy cycles
Dual
Extended
Note: 1. Cx = 7 + (A[MAX] + 1)/2.
128Mb, Multiple I/O Serial Flash Memory
READ MEMORY Operations
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Figure 18: QUAD OUTPUT FAST READ Command
Dummy cycles
7 8 Cx
0
C
MSB
DQ0
LSB
Command DOUT
LSB
DQ[2:1] DOUT
A[MAX]
High-Z
A[MIN]
DOUT
DOUT
DOUT
DOUT
DQ3 DOUT
‘1’
MSB
DOUT DOUT
1 2 Cx
0
C
MSB
DQ[3:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DOUT DOUT DOUT
LSB
Dummy cycles
Quad
Extended
Note: 1. Cx = 7 + (A[MAX] + 1).
Figure 19: QUAD INPUT/OUTPUT FAST READ Command
Dummy cycles
7 8 Cx
0
C
MSB
DQ0
LSB
Command DOUT
LSB
DQ[2:1] DOUT
High-Z
A[MIN]
DOUT
DOUT
DOUT
DOUT
DQ3 DOUT
‘1’
MSB
DOUT DOUT
A[MAX]
1 2 Cx
0
C
MSB
DQ[3:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DOUT DOUT DOUT
LSB
Dummy cycles
Quad
Extended
Note: 1. Cx = 7 + (A[MAX] + 1)/4.
128Mb, Multiple I/O Serial Flash Memory
READ MEMORY Operations
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PROGRAM Operations
PROGRAM commands are initiated by first executing the WRITE ENABLE command to
set the write enable latch bit to 1. S# is then driven LOW and held LOW until the eighth
bit of the last data byte has been latched in, after which it must be driven HIGH. The
command code is input on DQ0, followed by input on DQ[n] of address bytes and at
least one data byte. Each address bit is latched in during the rising edge of the clock.
When S# is driven HIGH, the operation, which is self-timed, is initiated; its duration is
tPP.
If the bits of the least significant address, which is the starting address, are not all zero,
all data transmitted beyond the end of the current page is programmed from the start-
ing address of the same page. If the number of bytes sent to the device exceed the maxi-
mum page size, previously latched data is discarded and only the last maximum page-
size number of data bytes are guaranteed to be programmed correctly within the same
page. If the number of bytes sent to the device is less than the maximum page size, they
are correctly programmed at the specified addresses without any effect on the other
bytes of the same page.
When the operation is in progress, the write in progress bit is set to 1. The write enable
latch bit is cleared to 0, whether the operation is successful or not. The status register
and flag status register can be polled for the operation status. An operation can be
paused or resumed by the PROGRAM/ERASE SUSPEND or PROGRAM/ERASE RESUME
command, respectively. When the operation completes, the write in progress bit is
cleared to 0.
If the operation times out, the write enable latch bit is reset and the program fail bit is
set to 1. If S# is not driven HIGH, the command is not executed, flag status register error
bits are not set, and the write enable latch remains set to 1. When a command is applied
to a protected sector, the command is not executed, the write enable latch bit remains
set to 1, and flag status register bits 1 and 4 are set.
Table 24: Data/Address Lines for PROGRAM Commands
Note 1 applies to entire table
Command Name Data In Address In Extended Dual Quad
PAGE PROGRAM DQ0 DQ0 Yes Yes Yes
DUAL INPUT FAST PROGRAM DQ[1:0] DQ0 Yes Yes No
EXTENDED DUAL INPUT
FAST PROGRAM
DQ[1:0] DQ[1:0] Yes Yes No
QUAD INPUT FAST PROGRAM DQ[3:0] DQ0 Yes No Yes
EXTENDED QUAD INPUT
FAST PROGRAM
DQ[3:0] DQ[3:0] Yes No Yes
Note: 1. Yes in the protocol columns indicates that the command is supported and has the same
functionality and command sequence as other commands marked Yes.
128Mb, Multiple I/O Serial Flash Memory
PROGRAM Operations
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Figure 20: PAGE PROGRAM Command
7 8 Cx
0
C
MSB
DQ0
LSB
Command
A[MAX]
A[MIN]
MSB
DIN DIN DIN DIN DIN
LSB
DIN DIN DIN DIN
3 4 Cx
0
C
MSB
DQ[1:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DIN DIN DIN DIN DIN
LSB
1 2 Cx
0
C
MSB
DQ[3:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DIN DIN DIN
LSB
Extended
Dual
Quad
Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1).
For dual SPI protocol, Cx = 3 + (A[MAX] + 1)/2.
For quad SPI protocol, Cx = 1 + (A[MAX] + 1)/4.
128Mb, Multiple I/O Serial Flash Memory
PROGRAM Operations
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Figure 21: DUAL INPUT FAST PROGRAM Command
Extended
Dual 3 4 Cx
0
C
MSB
DQ[1:0]
LSB
Command DIN
LSB
A[MAX]
A[MIN]
MSB
DIN DIN DIN DIN
7 8 Cx
0
C
MSB
DQ0
LSB
Command DIN
LSB
DQ1 DIN
A[MAX]
High-Z
A[MIN]
DIN
MSB
DIN
DIN
DIN
DIN
DIN
DIN
DIN
Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1).
For dual SPI protocol, Cx = 3 + (A[MAX] + 1)/2.
Figure 22: EXTENDED DUAL INPUT FAST PROGRAM Command
Extended
Dual 3 4 Cx
0
C
MSB
DQ[1:0]
LSB
Command DIN
LSB
A[MAX]
A[MIN]
MSB
DIN DIN DIN DIN
7 8 Cx
0
C
MSB
DQ0
LSB
Command DIN
LSB
DQ1 DIN
High-Z
A[MIN]
A[MAX]
DIN
MSB
DIN
DIN
DIN
DIN
DIN
DIN
DIN
Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1)/2.
For dual SPI protocol, Cx = 3 + (A[MAX] + 1)/2.
128Mb, Multiple I/O Serial Flash Memory
PROGRAM Operations
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Figure 23: QUAD INPUT FAST PROGRAM Command
7 8 Cx
0
C
MSB
DQ0
LSB
Command DIN
LSB
DQ[3:1] DIN
A[MAX]
High-Z
A[MIN]
DIN
MSB
DIN
DIN
DIN
Extended
Quad 1 2 Cx
0
C
MSB
DQ[3:0]
LSB
Command DIN
LSB
A[MAX]
A[MIN]
MSB
DIN DIN
Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1)/4.
For quad SPI protocol, Cx = 1 + (A[MAX] + 1)/4.
128Mb, Multiple I/O Serial Flash Memory
PROGRAM Operations
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Figure 24: EXTENDED QUAD INPUT FAST PROGRAM Command
7 8 Cx
0
C
MSB
DQ0
LSB
Command DIN
LSB
DQ[2:1] DIN
High-Z
A[MIN]
A[MAX]
DIN
DIN
DIN
DIN
DQ3 DIN
‘1’
MSB
DIN DIN
Extended
Quad 1 2 Cx
0
C
MSB
DQ[3:0]
LSB
Command DIN
LSB
A[MAX]
A[MIN]
MSB
DIN DIN
Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1)/4.
For quad SPI protocol, Cx = 1 + (A[MAX] + 1)/4.
128Mb, Multiple I/O Serial Flash Memory
PROGRAM Operations
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WRITE Operations
WRITE ENABLE Command
The WRITE ENABLE operation sets the write enable latch bit. To execute a WRITE ENA-
BLE command, S# is driven LOW and held LOW until the eighth bit of the command
code has been latched in, after which it must be driven HIGH. The command code is
input on DQ0 for extended SPI protocol, on DQ[1:0] for dual SPI protocol, and on
DQ[3:0] for quad SPI protocol.
The write enable latch bit must be set before every PROGRAM, ERASE, and WRITE com-
mand. If S# is not driven HIGH after the command code has been latched in, the com-
mand is not executed, flag status register error bits are not set, and the write enable
latch remains cleared to its default setting of 0.
WRITE DISABLE Command
The WRITE DISABLE operation clears the write enable latch bit. To execute a WRITE
DISABLE command, S# is driven LOW and held LOW until the eighth bit of the com-
mand code has been latched in, after which it must be driven HIGH. The command
code is input on DQ0 for extended SPI protocol, on DQ[1:0] for dual SPI protocol, and
on DQ[3:0] for quad SPI protocol.
If S# is not driven HIGH after the command code has been latched in, the command is
not executed, flag status register error bits are not set, and the write enable latch re-
mains set to 1.
128Mb, Multiple I/O Serial Flash Memory
WRITE Operations
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Figure 25: WRITE ENABLE and WRITE DISABLE Command Sequence
DQ0
MSB
LSB
Dual
Don’t Care
Command Bits
DQ0
01 2 4 53 76
C
Extended
High-Z
DQ1
MSB
LSB
0 0 0 0 0 011
Command Bits
S#
S#
0 0 1 0
MSB
1
0
C
LSB
DQ1
DQ2
Quad
Command Bits
S#
0
0
DQ3 0 0
DQ0 0 0
1
1
DQ1 0 0 0 1
1 2
0
C
3
Note: 1. Shown here is the WRITE ENABLE command code, which is 06h or 0000 0110 binary. The
WRITE DISABLE command sequence is identical, except the WRITE DISABLE command
code is 04h or 0000 0100 binary.
128Mb, Multiple I/O Serial Flash Memory
WRITE Operations
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ERASE Operations
SUBSECTOR ERASE Command
To execute the SUBSECTOR ERASE command (and set the selected subsector bits set to
FFh), the WRITE ENABLE command must be issued to set the write enable latch bit to
1. S# is driven LOW and held LOW until the eighth bit of the last data byte has been
latched in, after which it must be driven HIGH. The command code is input on DQ0,
followed by three address bytes; any address within the subsector is valid. Each address
bit is latched in during the rising edge of the clock. When S# is driven HIGH, the opera-
tion, which is self-timed, is initiated; its duration is tSSE. The operation can be suspen-
ded and resumed by the PROGRAM/ERASE SUSPEND and PROGRAM/ERASE RESUME
commands, respectively.
If the write enable latch bit is not set, the device ignores the SUBSECTOR ERASE com-
mand and no error bits are set to indicate operation failure.
When the operation is in progress, the write in progress bit is set to 1. The write enable
latch bit is cleared to 0, whether the operation is successful or not. The status register
and flag status register can be polled for the operation status. When the operation com-
pletes, the write in progress bit is cleared to 0.
If the operation times out, the write enable latch bit is reset and the erase error bit is set
to 1. If S# is not driven HIGH, the command is not executed, flag status register error
bits are not set, and the write enable latch remains set to 1. When a command is applied
to a protected subsector, the command is not executed. Instead, the write enable latch
bit remains set to 1, and flag status register bits 1 and 5 are set.
SECTOR ERASE Command
To execute the SECTOR ERASE command (and set selected sector bits to FFh), the
WRITE ENABLE command must be issued to set the write enable latch bit to 1. S# is
driven LOW and held LOW until the eighth bit of the last data byte has been latched in,
after which it must be driven HIGH. The command code is input on DQ0, followed by
three address bytes; any address within the sector is valid. Each address bit is latched in
during the rising edge of the clock. When S# is driven HIGH, the operation, which is
self-timed, is initiated; its duration is tSE. The operation can be suspended and resumed
by the PROGRAM/ERASE SUSPEND and PROGRAM/ERASE RESUME commands, re-
spectively.
If the write enable latch bit is not set, the device ignores the SECTOR ERASE command
and no error bits are set to indicate operation failure.
When the operation is in progress, the write in progress bit is set to 1 and the write ena-
ble latch bit is cleared to 0, whether the operation is successful or not. The status regis-
ter and flag status register can be polled for the operation status. When the operation
completes, the write in progress bit is cleared to 0.
If the operation times out, the write enable latch bit is reset and erase error bit is set to
1. If S# is not driven HIGH, the command is not executed, flag status register error bits
are not set, and the write enable latch remains set to 1. When a command is applied to a
protected sector, the command is not executed. Instead, the write enable latch bit re-
mains set to 1, and flag status register bits 1 and 5 are set.
128Mb, Multiple I/O Serial Flash Memory
ERASE Operations
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Figure 26: SUBSECTOR and SECTOR ERASE Command
7 8 Cx
0
C
MSB
DQ0
LSB
Command
A[MAX]
A[MIN]
3 4 Cx
0
C
MSB
DQ0[1:0]
LSB
Command
A[MAX]
A[MIN]
1 2 Cx
0
C
MSB
DQ0[3:0]
LSB
Command
A[MAX]
A[MIN]
Extended
Dual
Quad
Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1).
For dual SPI protocol, Cx = 3 + (A[MAX] + 1)/2.
For quad SPI protocol, Cx = 1 + (A[MAX] + 1)/4.
BULK ERASE Command
To initiate the BULK ERASE command, the WRITE ENABLE command must be issued
to set the write enable latch bit to 1. S# is driven LOW and held LOW until the eighth bit
of the last data byte has been latched in, after which it must be driven HIGH. The com-
mand code is input on DQ0. When S# is driven HIGH, the operation, which is self-
timed, is initiated; its duration is tBE.
If the write enable latch bit is not set, the device ignores the BULK ERASE command
and no error bits are set to indicate operation failure.
When the operation is in progress, the write in progress bit is set to 1 and the write ena-
ble latch bit is cleared to 0, whether the operation is successful or not. The status regis-
ter and flag status register can be polled for the operation status. When the operation
completes, the write in progress bit is cleared to 0.
If the operation times out, the write enable latch bit is reset and erase error bit is set to
1. If S# is not driven HIGH, the command is not executed, the flag status register error
bits are not set, and the write enable latch remains set to 1.
The command is not executed if any sector is locked. Instead, the write enable latch bit
remains set to 1, and flag status register bits 1 and 5 are set.
128Mb, Multiple I/O Serial Flash Memory
ERASE Operations
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Figure 27: BULK ERASE Command
7
0
C
MSB
DQ0
LSB
Command
3
0
C
MSB
DQ0[1:0]
LSB
Command
1
0
C
MSB
DQ0[3:0]
LSB
Command
Extended
Dual
Quad
PROGRAM/ERASE SUSPEND Command
To initiate the PROGRAM/ERASE SUSPEND command, S# is driven LOW. The com-
mand code is input on DQ0. The operation is terminated by the PROGRAM/ERASE RE-
SUME command.
PROGRAM/ERASE SUSPEND command enables the memory controller to interrupt
and suspend an array PROGRAM or ERASE operation within the program/erase latency.
If a SUSPEND command is issued during a PROGRAM operation, then the flag status
register bit 2 is set to 1. After erase/program latency time, the flag status register bit 7 is
also set to 1, showing the device to be in a suspended state, waiting for any operation
(see the Operations Allowed/Disallowed During Device States table).
If a SUSPEND command is issued during an ERASE operation, then the flag status regis-
ter bit 6 is set to 1. After erase/program latency time, the flag status register bit 7 is also
set to 1, showing that device to be in a suspended state, waiting for any operation (see
the Operations Allowed/Disallowed During Device States table).
If the time remaining to complete the operation is less than the suspend latency, the de-
vice completes the operation and clears the flag status register bits 2 or 6, as applicable.
Because the suspend state is volatile, if there is a power cycle, the suspend state infor-
mation is lost and the flag status register powers up as 80h.
During an ERASE SUSPEND operation, a PROGRAM or READ operation is possible in
any sector except the one in a suspended state. Reading from a sector that is in a sus-
pended state will output indeterminate data. The device ignores a PROGRAM com-
mand to a sector that is in an ERASE SUSPEND state; it also sets the flag status register
bit 4 to 1: program failure/protection error, and leaves the write enable latch bit un-
changed. The commands allowed during an erase suspend state include the WRITE
LOCK REGISTER command, the WRITE VOLATILE CONFIGURATION REGISTER com-
128Mb, Multiple I/O Serial Flash Memory
ERASE Operations
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mand, and the WRITE ENHANCED VOLATILE CONFIGURATION REGISTER command.
When the ERASE operation resumes, it does not check the new lock status of the WRITE
LOCK REGISTER command.
During a PROGRAM SUSPEND operation, a READ operation is possible in any page ex-
cept the one in a suspended state. Reading from a page that is in a suspended state will
output indeterminate data. The commands allowed during a program suspend state in-
clude the WRITE VOLATILE CONFIGURATION REGISTER command and the WRITE
ENHANCED VOLATILE CONFIGURATION REGISTER command.
It is possible to nest a PROGRAM/ERASE SUSPEND operation inside a PROGRAM/
ERASE SUSPEND operation just once. Issue an ERASE command and suspend it. Then
issue a PROGRAM command and suspend it also. With the two operations suspended,
the next PROGRAM/ERASE RESUME command resumes the latter operation, and a sec-
ond PROGRAM/ERASE RESUME command resumes the former (or first) operation.
Table 25: Suspend Parameters
Parameter Condition Typ Max Units Notes
Erase to suspend Sector erase or erase resume to erase suspend 150 – µs 1
Program to suspend Program resume to program suspend 5 – µs 1
Subsector erase to sus-
pend
Subsector erase or subsector erase resume to erase sus-
pend
50 – µs 1
Suspend latency Program 7 – µs 2
Suspend latency Subsector erase 15 – µs 2
Suspend latency Erase 15 – µs 3
Notes: 1. Timing is not internally controlled.
2. Any READ command accepted.
3. Any command except the following are accepted: SECTOR, SUBSECTOR, or BULK ERASE;
WRITE STATUS REGISTER; WRITE NONVOLATILE CONFIGURATION REGISTER; and PRO-
GRAM OTP.
128Mb, Multiple I/O Serial Flash Memory
ERASE Operations
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Table 26: Operations Allowed/Disallowed During Device States
Note 1 applies to entire table
Operation
Standby
State
Program or
Erase State
Subsector Erase Suspend or
Program Suspend State
Erase Suspend
State Notes
READ Yes No Yes Yes 2
PROGRAM Yes No No Yes/No 3
ERASE Yes No No No 4
WRITE Yes No No No 5
WRITE Yes No Yes Yes 6
READ Yes Yes Yes Yes 7
SUSPEND No Yes No No 8
Notes: 1. The device can be in only one state at a time. Depending on the state of the device,
some operations are allowed (Yes) and others are not (No). For example, when the de-
vice is in the standby state, all operations except SUSPEND are allowed in any sector. For
all device states except the erase suspend state, if an operation is allowed or disallowed
in one sector, it is allowed or disallowed in all other sectors. In the erase suspend state, a
PROGRAM operation is allowed in any sector except the one in which an ERASE opera-
tion has been suspended.
2. All READ operations except READ STATUS REGISTER and READ FLAG REGISTER. When is-
sued to a sector or subsector that is simultaneously in an erase suspend state, the READ
operation is accepted, but the data output is not guaranteed until the erase has comple-
ted.
3. All PROGRAM operations except PROGRAM OTP. In the erase suspend state, a PROGRAM
operation is allowed in any sector (Yes) except the sector (No) in which an ERASE opera-
tion has been suspended.
4. Applies to the SECTOR ERASE or SUBSECTOR ERASE operation.
5. Applies to the following operations: WRITE STATUS REGISTER, WRITE NONVOLATILE
CONFIGURATION REGISTER, PROGRAM OTP, and BULK ERASE.
6. Applies to the following operations: WRITE ENABLE, WRITE DISABLE, CLEAR FLAG STA-
TUS REGISTER, WRITE LOCK REGISTER, WRITE VOLATILE, and ENHANCED VOLATILE CON-
FIGURATION REGISTER.
7. Applies to the READ STATUS REGISTER or READ FLAG STATUS REGISTER operation.
8. Applies to the PROGRAM SUSPEND or ERASE SUSPEND operation.
PROGRAM/ERASE RESUME Command
To initiate the PROGRAM/ERASE RESUME command, S# is driven LOW. The command
code is input on DQ0. The operation is terminated by driving S# HIGH.
When this command is executed, the status register write in progress bit is set to 1, and
the flag status register program erase controller bit is set to 0. This command is ignored
if the device is not in a suspended state.
128Mb, Multiple I/O Serial Flash Memory
ERASE Operations
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RESET Operations
Table 27: Reset Command Set
Command Command Code (Binary) Command Code (Hex) Address Bytes
RESET ENABLE 0110 0110 66 0
RESET MEMORY 1001 1001 99 0
RESET ENABLE and RESET MEMORY Command
To reset the device, the RESET ENABLE command must be followed by the RESET
MEMORY command. To execute each command, S# is driven LOW. The command code
is input on DQ0. A minimum de-selection time of tSHSL2 must come between the RE-
SET ENABLE and RESET MEMORY commands or a reset is not guaranteed. When these
two commands are executed and S# is driven HIGH, the device enters a power-on reset
condition. A time of tSHSL3 is required before the device can be re-selected by driving
S# LOW. It is recommended that the device exit XIP mode before executing these two
commands to initiate a reset.
If a reset is initiated while a WRITE, PROGRAM, or ERASE operation is in progress or
suspended, the operation is aborted and data may be corrupted.
Figure 28: RESET ENABLE and RESET MEMORY Command
C
S#
DQ0
01234567 01234567
Reset enable Reset memory
Note: 1. The number of lines and rate for transmission varies with extended, dual, or quad SPI.
RESET Conditions
All volatile lock bits, the volatile configuration register, and the enhanced volatile con-
figuration register are reset to the power-on reset default condition. The power-on reset
condition depends on settings in the nonvolatile configuration register.
128Mb, Multiple I/O Serial Flash Memory
RESET Operations
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ONE TIME PROGRAMMABLE Operations
READ OTP ARRAY Command
To initiate a READ OTP ARRAY command, S# is driven LOW. The command code is in-
put on DQ0, followed by three bytes and dummy clock cycles. Each address bit is latch-
ed in during the rising edge of C. Data is shifted out on DQ1, beginning from the speci-
fied address and at a maximum frequency of fC (MAX) on the falling edge of the clock.
The address increments automatically to the next address after each byte of data is shif-
ted out. There is no rollover mechanism; therefore, if read continuously, after location
40h, the device continues to output data at location 40h. The operation is terminated by
driving S# HIGH at any time during data output.
Figure 29: READ OTP Command
7 8 Cx
0
C
MSB
DQ0
LSB
Command
A[MAX]
A[MIN]
3 4 Cx
0
C
MSB
DQ[1:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DOUT DOUT DOUT DOUT DOUT
LSB
Dummy cycles
1 2 Cx
0
C
MSB
DQ[3:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DOUT DOUT DOUT
LSB
Dummy cycles
Extended
MSB
DOUT DOUT DOUT DOUT DOUT
LSB
DOUT DOUT DOUT DOUT
Dummy cycles
Dual
Quad
DQ1 High-Z
Don’t Care
Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1).
For dual SPI protocol, Cx = 3 + (A[MAX] + 1)/2.
For quad SPI protocol, Cx = 1 + (A[MAX] + 1)/4.
PROGRAM OTP ARRAY Command
To initiate the PROGRAM OTP ARRAY command, the WRITE ENABLE command must
be issued to set the write enable latch bit to 1; otherwise, the PROGRAM OTP ARRAY
command is ignored and flag status register bits are not set. S# is driven LOW and held
LOW until the eighth bit of the last data byte has been latched in, after which it must be
driven HIGH. The command code is input on DQ0, followed by three bytes and at least
one data byte. Each address bit is latched in during the rising edge of the clock. When S#
is driven HIGH, the operation, which is self-timed, is initiated; its duration is tPOTP.
There is no rollover mechanism; therefore, after a maximum of 65 bytes are latched in
and subsequent bytes are discarded.
128Mb, Multiple I/O Serial Flash Memory
ONE TIME PROGRAMMABLE Operations
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PROGRAM OTP ARRAY programs, at most, 64 bytes to the OTP memory area and one
OTP control byte. When the operation is in progress, the write in progress bit is set to 1.
The write enable latch bit is cleared to 0, whether the operation is successful or not, and
the status register and flag status register can be polled for the operation status. When
the operation completes, the write in progress bit is cleared to 0.
If the operation times out, the write enable latch bit is reset and the program fail bit is
set to 1. If S# is not driven HIGH, the command is not executed, flag status register error
bits are not set, and the write enable latch remains set to 1.
The OTP control byte (byte 64) is used to permanently lock the OTP memory array.
Table 28: OTP Control Byte (Byte 64)
Bit Name Settings Description
0 OTP control byte 0 = Locked
1 = Unlocked
(Default)
Used to permanently lock the OTP array (byte 64). When bit 0 = 1, the
OTP array can be programmed. When bit 0 = 0, the OTP array is read only.
Once bit 0 has been programmed to 0, it can no longer be changed to 1.
PROGRAM OTP ARRAY is ignored, write enable latch bit remains set, and
flag status register bits 1 and 4 are set.
128Mb, Multiple I/O Serial Flash Memory
ONE TIME PROGRAMMABLE Operations
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Figure 30: PROGRAM OTP Command
7 8 Cx
0
C
MSB
DQ0
LSB
Command
A[MAX]
A[MIN]
MSB
DIN DIN DIN DIN DIN
LSB
DIN DIN DIN DIN
3 4 Cx
0
C
MSB
DQ[1:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DIN DIN DIN DIN DIN
LSB
1 2 Cx
0
C
MSB
DQ[3:0]
LSB
Command
A[MAX]
A[MIN]
MSB
DIN DIN DIN
LSB
Extended
Dual
Quad
Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1).
For dual SPI protocol, Cx = 3 + (A[MAX] + 1)/2.
For quad SPI protocol, Cx = 1 + (A[MAX] + 1)/4.
128Mb, Multiple I/O Serial Flash Memory
ONE TIME PROGRAMMABLE Operations
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XIP Mode
Execute-in-place (XIP) mode allows the memory to be read by sending an address to the
device and then receiving the data on one, two, or four pins in parallel, depending on
the customer requirements. XIP mode offers maximum flexibility to the application,
saves instruction overhead, and reduces random access time.
Activate or Terminate XIP Using Volatile Configuration Register
Applications that boot in SPI and must switch to XIP use the volatile configuration reg-
ister. XIP provides faster memory READ operations by requiring only an address to exe-
cute, rather than a command code and an address.
To activate XIP requires two steps. First, enable XIP by setting volatile configuration reg-
ister bit 3 to 0. Next, drive the XIP confirmation bit to 0 during the next FAST READ op-
eration. XIP is then active. Once in XIP, any command that occurs after S# is toggled re-
quires only address bits to execute; a command code is not necessary, and device oper-
ations use the SPI protocol that is enabled. XIP is terminated by driving the XIP confir-
mation bit to 1. The device automatically resets volatile configuration register bit 3 to 1.
Note: For devices with basic XIP, indicated by a part number feature set digit of 2 or 4, it
is not necessary to set the volatile configuration register bit 3 to 0 to enable XIP. Instead,
it is enabled by setting the XIP confirmation bit to 0 during the first dummy clock cycle
after any FAST READ command.
Activate or Terminate XIP Using Nonvolatile Configuration Register
Applications that must boot directly in XIP use the nonvolatile configuration register. To
enable a device to power-up in XIP using the nonvolatile configuration register, set non-
volatile configuration register bits [11:9]. Settings vary according to protocol, as ex-
plained in the Nonvolatile Configuration Register section. Because the device boots di-
rectly in XIP, the confirmation bit is already set to 0, and after the next power cycle, XIP
is active. Once in XIP, a command code is unnecessary, and device operations use the
SPI protocol currently enabled. XIP is terminated by driving the XIP confirmation bit to
1.
128Mb, Multiple I/O Serial Flash Memory
XIP Mode
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Figure 31: XIP Mode Directly After Power-On
C
VCC
S#
DQ0
DQ[3:1]
DOUT
Xb DOUT DOUT DOUT DOUT
DOUT DOUT DOUT DOUT DOUT
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
tVSI (<100µ)
NVCR check:
XIP enabled
Dummy cycles
Mode 3
Mode 0
A[MAX] MSB
A[MIN] LSB
Note: 1. Xb is the XIP confirmation bit and should be set as follows: 0 to keep XIP state; 1 to exit
XIP mode and return to standard read mode.
Confirmation Bit Settings Required to Activate or Terminate XIP
The XIP confirmation bit setting activates or terminates XIP after it has been enabled or
disabled. This bit is the value on DQ0 during the first dummy clock cycle in the FAST
READ operation. XIP requires at least one additional clock cycle to send the XIP confir-
mation bit to the memory on DQ0 during the first dummy clock cycle.
Table 29: XIP Confirmation Bit
Bit Value Description
0 Activates XIP: While this bit is 0, XIP remains activated.
1 Terminates XIP: When this bit is set to 1, XIP is terminated and the device returns to SPI.
Table 30: Effects of Running XIP in Different Protocols
Protocol Effect Notes
Extended I/O,
Dual I/O
In a device with a dedicated part number where RST# is enabled, a LOW pulse on RST#
resets XIP and the device to the state it was in previous to the last power-up, as defined
by the nonvolatile configuration register.
Dual I/O Values of DQ1 during the first dummy clock cycle are "Don't Care."
Quad I/O Values of DQ[3:1] during the first dummy clock cycle are "Don't Care."
In a device with a dedicated part number where RST# is enabled, a LOW pulse on RST#
resets XIP and the device to the state it was in previous to the last power-up, as defined
by the nonvolatile configuration register.
1
Note: 1. In a device with a dedicated part number, memory can be reset only when the device is
deselected.
128Mb, Multiple I/O Serial Flash Memory
XIP Mode
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Terminating XIP After a Controller and Memory Reset
The system controller and the device can become out of synchronization if, during the
life of the application, the system controller is reset without the device being reset. In
such a case, the controller can reset the memory to power-on reset if the memory has
reset functionality. (Reset is available in devices with a dedicated part number.)
If reset functionality is not available, has been disabled, or is not supported by the con-
troller, the controller must execute the following sequence to terminate XIP in the
memory device. In quad I/O protocol, drive DQ0 = 1 with S# held LOW for seven clock
cycles; S# must driven HIGH before the eighth clock cycle. In dual I/O protocol, drive
DQ0 = 1 with S# held LOW for 13 clock cycles; S# must driven HIGH before the four-
teenth clock cycle. If the device is in extended protocol, drive DQ0 = 1 with S# held LOW
for 25 clock cycles; S# must driven HIGH before the twenty-sixth clock cycle.
These sequences cause the controller to set the XIP confirmation bit to 1, thereby termi-
nating XIP. However, it does not reset the device or interrupt PROGRAM/ERASE opera-
tions that may be in progress. After terminating XIP, the controller must execute RESET
ENABLE and RESET MEMORY to implement a software reset and reset the device.
128Mb, Multiple I/O Serial Flash Memory
XIP Mode
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Power-Up and Power-Down
Power-Up and Power-Down Requirements
At power-up and power-down, the device must not be selected; that is, S# must follow
the voltage applied on VCC until VCC reaches the correct values: VCC,min at power-up and
VSS at power-down.
To avoid data corruption and inadvertent WRITE operations during power-up, a power-
on reset circuit is included. The logic inside the device is held to RESET while VCC is less
than the power-on reset threshold voltage shown here; all operations are disabled, and
the device does not respond to any instruction. During a standard power-up phase, the
device ignores all commands except READ STATUS REGISTER and READ FLAG STATUS
REGISTER. These operations can be used to check the memory internal state. After
power-up, the device is in standby power mode; the write enable latch bit is reset; the
write in progress bit is reset; and the lock registers are configured as: (write lock bit, lock
down bit) = (0,0).
Normal precautions must be taken for supply line decoupling to stabilize the VCC sup-
ply. Each device in a system should have the VCC line decoupled by a suitable capacitor
(typically 100nF) close to the package pins. At power-down, when VCC drops from the
operating voltage to below the power-on-reset threshold voltage shown here, all opera-
tions are disabled and the device does not respond to any command.
Note: If power-down occurs while a WRITE, PROGRAM, or ERASE cycle is in progress,
data corruption may result.
VPPH must be applied only when VCC is stable and in the VCC,min to VCC,max voltage
range.
Figure 32: Power-Up Timing
V
CC
V
CC,min
V
WI
Chip
reset
Chip selection not allowed
Polling allowed
t
VTW =
t
VTR
Time
Device fully accessible
V
CC,max
SPI protocol Starting protocol
defined by NVCR
WIP = 1
WEL = 0
WIP = 0
WEL = 0
128Mb, Multiple I/O Serial Flash Memory
Power-Up and Power-Down
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Table 31: Power-Up Timing and VWI Threshold
Note 1 applies to entire table
Symbol Parameter Min Max Unit
tVTR VCC,min to read – 150 µs
tVTW VCC,min to device fully accessible – 150 µs
VWI Write inhibit voltage 1.3 1.5 V
Note: 1. Parameters listed are characterized only.
Power Loss Rescue Sequence
If a power loss occurs during a WRITE NONVOLATILE CONFIGURATION REGISTER
command, after the next power-on, the device might begin in an undetermined state
(XIP mode or an unnecessary protocol). If this happens, until the next power-up, a res-
cue sequence must reset the device to a fixed state (extended SPI protocol without XIP).
After the rescue sequence, the issue should be resolved by running the WRITE NONVO-
LATILE CONFIGURATION REGISTER command again. The rescue sequence is com-
posed of two parts that must be run in the correct order. During the entire sequence,
tSHSL2 must be at least 50ns. The first part of the sequence is DQ0 (PAD DATA) and
DQ3 (PAD HOLD) equal to 1 for the situations listed below:
• 7 clock cycles within S# LOW (S# becomes HIGH before 8th clock cycle)
• + 13 clock cycles within S# LOW (S# becomes HIGH before 14th clock cycle)
• + 25 clock cycles within S# LOW (S# becomes HIGH before 26th clock cycle)
The second part of the sequence is exiting from dual or quad SPI protocol by using the
following FFh sequence: DQ0 and DQ3 equal to 1 for 8 clock cycles within S# LOW; S#
becomes HIGH before 9th clock cycle.
After this two-part sequence the extended SPI protocol is active.
128Mb, Multiple I/O Serial Flash Memory
Power-Up and Power-Down
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AC Reset Specifications
Table 32: AC RESET Conditions
Note 1 applies to entire table
Parameter Symbol Conditions Min Typ Max Unit
Reset pulse
width
tRLRH2 50 – – ns
Reset recovery
time
tRHSL Device deselected (S# HIGH) and is in XIP mode – – 40 ns
Device deselected (S# HIGH) and is in standby mode – – 40 ns
Device deselected (S# HIGH) and is in deep power-down
mode
– – 30 µs
Commands are being decoded and any READ operation
or WRITE operation to volatile registers is in progress
– – 40 ns
Any device array PROGRAM/ERASE/SUSPEND/RESUME,
PROGRAM OTP, NONVOLATILE SECTOR LOCK, and ERASE
NONVOLATILE SECTOR LOCK ARRAY operations are in
progress
– – 30 µs
WRITE STATUS REGISTER operation is in progress – tW – ms
WRITE NONVOLATILE CONFIGURATION REGISTER opera-
tion is in progress
–tWNVCR – ms
On completion or suspension of a SUBSECTOR ERASE op-
eration
–tSSE – s
Software reset
recovery time
tSHSL3 Device deselected (S# HIGH) and is in standby mode – – 90 ns
Device deselected (S# HIGH) and is in deep power-down
mode
30 µs
On completion of any device array PROGRAM/ERASE/
SUSPEND/RESUME, SECTOR ERASE, PROGRAM OTP, PAGE
PROGRAM, DUAL INPUT FAST PROGRAM, EXTENDED
DUAL INPUT FAST PROGRAM, QUAD INPUT FAST PRO-
GRAM, or EXTENDED QUAD INPUT FAST PROGRAM op-
eration
– – 30 µs
On completion or suspension of a WRITE STATUS REGIS-
TER operation
–tW – ms
On completion or suspension of a WRITE NONVOLATILE
CONFIGURATION REGISTER operation
–tWNVCR – ms
On completion or suspension of a SUBSECTOR ERASE op-
eration
–tSSE – s
S# deselect to
reset valid
tSHRV Deselect to reset valid in quad output or in QIO-SPI 2 – – ns
Notes: 1. Values are guaranteed by characterization; not 100% tested.
2. The device reset is possible but not guaranteed if tRLRH < 50ns.
128Mb, Multiple I/O Serial Flash Memory
AC Reset Specifications
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Figure 33: Reset AC Timing During PROGRAM or ERASE Cycle
tSHRH
tRLRH
tRHSL
S#
RESET#
Don’t Care
Figure 34: Reset Enable
C
S#
DQ0
01234567 01234567
Reset enable Reset memory
Figure 35: Serial Input Timing
tSLCH
tCHSL
tDVCH tCHDX tCLCH
tCHCL
tCHSH tSHCH
tSHSL
S#
C
DQ0
DQ1 High-Z High-Z
MSB in LSB in
Don’t Care
128Mb, Multiple I/O Serial Flash Memory
AC Reset Specifications
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Figure 36: Write Protect Setup and Hold During WRITE STATUS REGISTER Operation (SRWD = 1)
Don’t Care
High-Z High-Z
W#/VPP
S#
C
DQ0
DQ1
tWHSL tSHWL
128Mb, Multiple I/O Serial Flash Memory
AC Reset Specifications
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Figure 37: Hold Timing
tHLCH
tCHHL tHHCH
tHLQZ
tCHHH
tHHQX
S#
C
DQ0
DQ1
HOLD#
Don’t Care
Figure 38: Output Timing
tCL tCH
S#
C
DQ0
DQ1
LSB out
Address
LSB in
Don’t Care
tCLQX tCLQX tSHQZ
tCLQV tCLQV
128Mb, Multiple I/O Serial Flash Memory
AC Reset Specifications
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Figure 39: VPPH Timing
S#
C
DQ0
tVPPHSL
End of command
(identified by WIP polling)
VPPH
VPP
128Mb, Multiple I/O Serial Flash Memory
AC Reset Specifications
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Absolute Ratings and Operating Conditions
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only. Exposure to absolute maximum rating and operating conditions for
extended periods may adversely affect reliability. Stressing the device beyond the abso-
lute maximum ratings may cause permanent damage.
Table 33: Absolute Ratings
Symbol Parameter Min Max Units Notes
TSTG Storage temperature –65 150 °C
TLEAD Lead temperature during soldering – See note 1 °C
VCC Supply voltage –0.6 2.4 V
VPP Fast program/erase voltage –0.2 10 V
VIO Input/output voltage with respect to ground –0.6 VCC + 0.6 V 2
VESD Electrostatic discharge voltage
(human body model)
–2000 2000 V 3
Notes: 1. Compliant with JEDEC Standard J-STD-020C (for small-body, Sn-Pb or Pb assembly),
RoHS, and the European directive on Restrictions on Hazardous Substances (RoHS)
2002/95/EU.
2. For periods of less than 2ns, VIL can undershoot to –1.0V and VIH can overshoot to VCC
+1.0V.
3. JEDEC Standard JESD22-A114A (C1 = 100pF, R1 = 1500Ω, R2 = 500Ω).
Table 34: Operating Conditions
Symbol Parameter Min Max Units
VCC Supply voltage 1.7 2.0 V
VPPH Supply voltage on VPP 8.5 9.5 V
TAAmbient operating temperature –40 85 °C
TAAmbient operating temperature, automotive –40 125 °C
Table 35: Input/Output Capacitance
Note 1 applies to entire table
Symbol Description Test Condition Min Max Units
CIN/OUT Input/output capacitance
(DQ0/DQ1/DQ2/DQ3)
VOUT = 0V – 8 pF
CIN Input capacitance (other pins) VIN = 0V – 6 pF
Note: 1. These parameters are sampled only, not 100% tested. TA = 25°C at 54 MHz.
128Mb, Multiple I/O Serial Flash Memory
Absolute Ratings and Operating Conditions
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Table 36: AC Timing Input/Output Conditions
Symbol Description Min Max Units Notes
CLLoad capacitance 30 30 pF 1
– Input rise and fall times – 5 ns
Input pulse voltages 0.2VCC to 0.8VCC V 2
Input timing reference voltages 0.3VCC to 0.7VCC V
Output timing reference voltages VCC/2 VCC/2 V
Notes: 1. Output buffers are configurable by user.
2. For quad/dual operations: 0V to VCC.
Figure 40: AC Timing Input/Output Reference Levels
0.8VCC
0.2VCC
0.7VCC
0.5VCC
0.3VCC
Input levels1I/O timing
reference levels
Note: 1. 0.8VCC = VCC for dual/quad operations; 0.2VCC = 0V for dual/quad operations.
128Mb, Multiple I/O Serial Flash Memory
Absolute Ratings and Operating Conditions
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DC Characteristics and Operating Conditions
Table 37: DC Current Characteristics and Operating Conditions
Parameter Symbol Test Conditions Min Max Unit
Input leakage current ILI – ±2 µA
Output leakage current ILO – ±2 µA
Standby current ICC1 S = VCC, VIN = VSS or VCC – 100 µA
Deep power-down current ICC2 S = VCC, VIN = VSS or VCC – 10 µA
Operating current
(fast-read extended I/O)
ICC3 C = 0.1VCC/0.9VCC at 108 MHz, DQ1
= open
– 15 mA
C = 0.1VCC/0.9VCC at 54 MHz, DQ1
= open
– 6 mA
Operating current (fast-read dual I/O) C = 0.1VCC/0.9VCC at 108 MHz – 18 mA
Operating current (fast-read quad I/O) C = 0.1VCC/0.9VCC at 108 MHz – 20 mA
Operating current (program) ICC4 S# = VCC – 20 mA
Operating current (write status regis-
ter)
ICC5 S# = VCC – 20 mA
Operating current (erase) ICC6 S# = VCC – 20 mA
Table 38: DC Voltage Characteristics and Operating Conditions
Parameter Symbol Conditions Min Max Unit Notes
Input low voltage VIL –0.5 0.3VCC V 1
Input high voltage VIH 0.7VCC VCC + 0.4 V 1
Output low voltage VOL IOL = 1.6mA – 0.4 V
Output high voltage VOH IOH = –100µA VCC - 0.2 – V
Note: 1. For periods of less than 2ns, VIL can undershoot to –1.0V and VIH can overshoot to VCC
+1.0V.
128Mb, Multiple I/O Serial Flash Memory
DC Characteristics and Operating Conditions
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AC Characteristics and Operating Conditions
Table 39: AC Characteristics and Operating Conditions
Parameter Symbol Min Typ2Max Unit Notes
Clock frequency for all commands other than
READ (SPI-ER, QIO-SPI protocol)
fC DC – 108 MHz
Clock frequency for READ commands fR DC – 54 MHz
Clock HIGH time tCH 4 – – ns 1
Clock LOW time tCL 4 – – ns 2
Clock rise time (peak-to-peak) tCLCH 0.1 – – V/ns 3, 4
Clock fall time (peak-to-peak) tCHCL 0.1 – – V/ns 3, 4
S# active setup time (relative to clock) tSLCH 4 – – ns
S# not active hold time (relative to clock) tCHSL 4 – – ns
Data in setup time tDVCH 2 – – ns
Data in hold time tCHDX 3 – – ns
S# active hold time (relative to clock) tCHSH 4 – – ns
S# not active setup time (relative to clock) tSHCH 4 – – ns
S# deselect time after a READ command tSHSL1 20 – – ns
S# deselect time after a nonREAD command tSHSL2 50 – – ns
Output disable time tSHQZ – – 8 ns 3
Clock LOW to output valid under 30pF tCLQV – – 7 ns
Clock LOW to output valid under 10pF – – 5 ns
Output hold time (clock LOW) tCLQX 1 – – ns
Output hold time (clock HIGH) tCHQX 1 – – ns
HOLD command setup time (relative to clock) tHLCH 4 – – ns
HOLD command hold time (relative to clock) tCHHH 4 – – ns
HOLD command setup time (relative to clock) tHHCH 4 – – ns
HOLD command hold time (relative to clock) tCHHL 4 – – ns
HOLD command to output Low-Z tHHQX – – 8 ns 3
HOLD command to output High-Z tHLQZ – – 8 ns 3
Write protect setup time tWHSL 20 – – ns 5
Write protect hold time tSHWL 100 – – ns 5
Enhanced VPPH HIGH to S# LOW for extended
and dual I/O page program
tVPPHSL 200 – – ns 6
WRITE STATUS REGISTER cycle time tW – 1.3 8 ms
Write NONVOLATILE CONFIGURATION REGIS-
TER cycle time
tWNVCR – 0.2 3 s
CLEAR FLAG STATUS REGISTER cycle time tCFSR – 40 – ns
WRITE VOLATILE CONFIGURATION REGISTER
cycle time
tWVCR – 40 – ns
WRITE VOLATILE ENHANCED CONFIGURATION
REGISTER cycle time
tWRVECR – 40 – ns
128Mb, Multiple I/O Serial Flash Memory
AC Characteristics and Operating Conditions
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Table 39: AC Characteristics and Operating Conditions (Continued)
Parameter Symbol Min Typ2Max Unit Notes
PAGE PROGRAM cycle time (256 bytes) tPP – 0.5 5 ms 7
PAGE PROGRAM cycle time (n bytes) – int(n/8) ×
0.0158
5 ms 7
PAGE PROGRAM cycle time, VPP = VPPH (256
bytes)
– 0.4 5 ms 7
PROGRAM OTP cycle time (64 bytes) – 0.2 – ms 7
Subsector ERASE cycle time tSSE – 0.25 0.8 s
Sector ERASE cycle time tSE – 0.7 3 s
Sector ERASE cycle time (with VPP = VPPH) – 0.6 3 s
Bulk ERASE cycle time tBE – 120 240 s
Bulk ERASE cycle time (with VPP = VPPH) – 100 240 s
S# to deep power-down tDP – – 3 µs
S# HIGH to standby tRDP – – 30 µs
Notes: 1. tCH + tCL must add up to 1/fC.
2. Typical values given for TA = 25 °C.
3. Value guaranteed by characterization; not 100% tested.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRITE STATUS REGISTER command when STATUS
REGISTER WRITE is set to 1.
6. VPPH should be kept at a valid level until the PROGRAM or ERASE operation has comple-
ted and its result (success or failure) is known.
7. When using the PAGE PROGRAM command to program consecutive bytes, optimized
timings are obtained with one sequence including all the bytes versus several sequences
of only a few bytes (1 < n < 256).
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4
int(15.3) = 16.
128Mb, Multiple I/O Serial Flash Memory
AC Characteristics and Operating Conditions
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Package Dimensions
Figure 41: V-PDFN-8 6mm x 5mm Sawn (MLP8) – Package Code: F7
0.20 TYP
Seating plane
Leads coplinarity
Pin 1 ID
laser marking
1.27
TYP
3.00 ±0.20
0.6 +0.15
-0.1
0.02 +0.03
-0.02
0.40 +0.08
-0.05
3.00 ±0.20
0.80 ±0.10
C
6 TYP
Pin 1 ID
Pin 1 ID
option
5 TYP
0.08 C
0.1 C
Notes: 1. All dimensions are in millimeters.
2. See Part Number Ordering Information for complete package names and details.
128Mb, Multiple I/O Serial Flash Memory
Package Dimensions
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Figure 42: V-PDFN-8 8mm x 6mm (MLP8) – Package Code: F8
8.00 TYP
6.00 TYP 4.80 TYP
5.16 TYP
0.2
MIN
0.50 -0.05
+0.10
(NE - 1) × 1.27 TYP
Pin 1 ID
Ø0.3
1.27
TYP
8
7
6
5
1
2
3
4
0.05 MAX
0.40 +0.08
-0.05
0.85 TYP/
1 MAX
Pin 1 ID R 0.20
ddd C
bbb C
M
eee C A B
aaa CA
B
aaa C
M
fff C
Notes: 1. All dimensions are in millimeters.
2. See Part Number Ordering Information for complete package names and details.
128Mb, Multiple I/O Serial Flash Memory
Package Dimensions
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Figure 43: T-PBGA-24b05 6mm x 8mm – Package Code: 12
Ball A1 ID
1.20 MAX
6 ±0.10
0.20 MIN
1.00 TYP
1.00 TYP
8 ±0.10
4.00
Ball A1 ID
4.00
0.79 TYP
Seating
plane
0.1 A
A
24X Ø0.40 ±0.05
5 4 3 2 1
A
B
C
D
E
Notes: 1. All dimensions are in millimeters.
2. See Part Number Ordering Information for complete package names and details.
128Mb, Multiple I/O Serial Flash Memory
Package Dimensions
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Figure 44: SOP2-16 (300 mils body width) – Package Code: SF
16
0.23 MIN/
0.32 MAX
18
9
0.40 MIN/
1.27 MAX
0.20 ±0.1
2.5 ±0.15
10.30 ±0.20
7.50 ±0.10
10.00 MIN/
10.65 MAX
0.33 MIN/
0.51 MAX
0.1 Z
0° MIN/8° MAX
1.27 TYP
h x 45°
Z
Notes: 1. All dimensions are in millimeters.
2. See Part Number Ordering Information for complete package names and details.
128Mb, Multiple I/O Serial Flash Memory
Package Dimensions
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Figure 45: SOP2-8 (208 mils body width) – Package Code: SE
0.1 MAX
1
1.70 MIN/
1.91 MAX 1.78 MIN/
2.16 MAX 0.15 MIN/
0.25 MAX
5.08 MIN/
5.49 MAX
5.08 MIN/
5.49 MAX
0.5 MIN/
0.8 MAX
0.05 MIN/
0.25 MAX 0º MIN/
10º MAX
7.70 MIN/
8.10 MAX
0.36 MIN/
0.48 MAX
1.27 TYP
Notes: 1. All dimensions are in millimeters.
2. See Part Number Ordering Information for complete package names and details.
128Mb, Multiple I/O Serial Flash Memory
Package Dimensions
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Part Number Ordering Information
Micron Serial NOR Flash devices are available in different configurations and densities.
Verify valid part numbers by using Micron’s part catalog search at micron.com. To com-
pare features and specifications by device type, visit micron.com/products. Contact the
factory for devices not found.
For more information on how to identify products and top-side marking by the process
identification letter, refer to technical note TN-12-24, "Serial Flash Memory Device
Marking for the M25P, M25PE, M25PX, and N25Q Product Families."
Table 40: Part Number Information
Part Number
Category Category Details Notes
Device type N25Q = Serial NOR Flash memory, Multiple Input/Output (Single, Dual, Quad I/O), XIP
Density 128 = 128Mb
Technology A = 65nm
Feature set 1 = Byte addressability; HOLD pin; Micron XIP
2 = Byte addressability; HOLD pin; Basic XIP
3 = Byte addressability; RST# pin; Micron XIP
4 = Byte addressability; RST# pin; Basic XIP
Operating voltage 1 = VCC = 1.7 to 2.0V
Block structure E = Uniform (64KB and 4KB)
Package
(RoHS-compliant)
F7 = V-PDFN-8 6mm x 5mm Sawn (MLP8 6mm x 5mm)
F8 = V-PDFN-8 8mm x 6mm (MLP8 8mm x 6mm)
12 = T-PBGA-24b05 6mm x 8mm
SF = SOP2-16 300 mils body width (SO16W)
SE = SOP2-8 208 mils body width (SO8W)
Temperature and
test flow
4 = IT: –40°C to +85°C; Device tested with standard test flow
A = Automotive temperature range: –40 to +125°C; Device tested with high reliability cer-
tified test flow
H = IT: –40°C to +85°C; Device tested with high reliability certified test flow
Security features 0 = Default 1
Shipping material E = Tray
F = Tape and reel
G = Tube
Note: 1. Additional secure options are available upon customer request.
Table 41: Package Details
Micron SPI
and JEDEC
Category
Shortened
Package
Name Package Description
M25P
M45PE
Symbol
N25Q
Symbol
M25P
M45PE Pack-
age Names
Alternate
Package Name
V-PDFN-8
6mm x 5mm
Sawn
DFN/6mm x
5mm
Sawn
Very thin, plastic small-out-
line, 8 terminal pads (no
leads), 6mm x 5mm Sawn
MS F7 MLP8, DFN8,
VDFPN8,
VFQFPN8
V-PSON1-8/6mm
x 5mm Sawn,
VSON
128Mb, Multiple I/O Serial Flash Memory
Part Number Ordering Information
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Table 41: Package Details (Continued)
Micron SPI
and JEDEC
Category
Shortened
Package
Name Package Description
M25P
M45PE
Symbol
N25Q
Symbol
M25P
M45PE Pack-
age Names
Alternate
Package Name
V-PDFN-8
8mm x 6mm
DFN/8mm x
6mm
Very thin, plastic small out-
line, 8 terminal pads (no
leads), 8mm x 6mm
ME F8 MLP8, VDFPN8 V-PSON1-8/8mm
x 6mm, VSON
T-PBGA-
24b05/6mm x
8mm
TBGA 24 Thin plastic ball grid array, 24
balls, 6mm x 8mm
ZM 12 TBGA24 6x8mm
SOP2- 16/300
mil
SO16W Small-outline integrated cir-
cuit, 16 pins, wide (300 mil)
MF SF SO16 wide 300
mil body width
SOIC-16/300 mil,
SOP 16L 300 mil
SOP2- 8/208
mil
SO8W Small-outline integrated cir-
cuit, 8-pins, wide (208 mil)
MW SE SO8 wide 208
mil body width
128Mb, Multiple I/O Serial Flash Memory
Part Number Ordering Information
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Revision History
Rev. Q – 11/2014
• Reviewed the SFDP table
Rev. P – 05/2014
• Added to volatile configuration register, XIP settings column: description of Enable
and Disable
Rev. O – 2/2014
• Added footnote to Absolute Ratings and DC Voltage Characteristics and Operating
Conditions tables, stating that VIL and VIH can exceed minimum and maximum val-
ues for periods of less than 2ns
Rev. N – 1/2014
• Corrected RESET ENABLE and RESET MEMORY command timing diagram
Rev. M – 6/2013
• Updated VDFPN8 signal assignment figure by adding RESET#
Rev. L – 1/2013
• Updated SOP2-8 (208 mils body width) - Package Code: SE in Package Dimensions
• Updated the READ ID Operation figure in READ ID Operations
• Updated ERASE Operations
• Added link to part number chart in Part Number Ordering Information
• Updated part numbers in Features
Rev. K – 6/2012
• Updated tSSE specification in AC Reset Conditions table
Rev. J – 2/2012
• Added deep power-down to AC Reset specifications
Rev. I – 12/2011
• Updated note for Read ID Data Out table
Rev. H – 8/2011
• Updated SOP2-8 (208 mils body width) - Package Code: SE in Package Dimensions
• Updated value of tSSE in AC Characteristics and Operating Conditions
Rev. G – 7/2011
• Micron rebrand
128Mb, Multiple I/O Serial Flash Memory
Revision History
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Rev. F – 2/2011
• Updated order information
Rev. E – 1/2011
• Updated functionality
Rev. D – 10/2010
• Added the following packages: F6 = VDFPN8 6 x 5 mm (MLP 6 x 5) (RoHS compliant);
SE = SO8W (SO8 208 mils body width) (RoHS compliant)
• Changed the Typical specification for Erase to Suspend and Subsector
• Erase to Suspend in Operations Allowed / Disallowed During Device States
• Added tBE with VPP = VPPH and tSE with sector erase VPP = VPPH, TYP = 0.6s, MAX = 3s
to AC Characteristics
• Made miscellaneous text edits
Rev. C – 2/2010
• Corrected typographical error “iA” to “uA” for VOH in DC Characteristics
• Made the following specification changes in AC Characteristics: tW: changed MAX
from 15s to 8ms; tWNVCR: changed TYP from 1 to 0.2 and MAX from 15 to 3; tPP:
changed TYP from int(n/8) x 0.025 to int(n/8) x 0.015; tSSE: changed TYP from 150ms
to 0.2s and MAX from 500ms to 2s; tSE: changed TYP from 1s to 0.7s; tBE: changed
TYP from 256s to 170s and MAX from 770s to 250s
Rev. B – 5/2009
• Added the TBGA ballout and package information
• Updated PROGRAM/ERASE/SUSPEND operations; Device Protection; Read and Write
Volatile Configuration Register; Fast POR; Power-Up Timing graphics; Order Informa-
tion
Rev. A – 1/2009
• Initial release
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000
www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
128Mb, Multiple I/O Serial Flash Memory
Revision History
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