TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. IIIIIIIIIIIIIIIIIIII IIIIII I IIII III I III II IIII III III III IIIIIIIIIIIIIIIIIIII IIIIII IIII III IIII III III III IIIIII IIII III IIII III III III IIIIII IIII III IIII III III III IIIIII IIII IIIIIIIIII III III IIII III III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIII IIII IIIIIIIIII III IIIIIIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIII III IIIIIIIIIIIII IIII III III IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII III III IIIIIIIIIIIII IIII III III IIIIIIIIIIIII IIII III III http://onsemi.com MAXIMUM RATINGS Rating Symbol TIP29 9 TIP30 Collector-Emitter Voltage VCEO 40 60 80 100 Vdc Collector-Base Voltage VCB 40 60 80 100 Vdc Emitter-Base Voltage VEB Collector Current Continuous Peak TIP29A 9 TIP30A TIP29B 9 TIP30B TIP29C 9C TIP30C Unit 5.0 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, 80-100 VOLTS 30 WATTS Vdc IC MARKING DIAGRAM 4 Adc 1.0 3.0 Base Current IB Total Power Dissipation @ TC = 25C Derate above 25C PD Total Power Dissipation @ TA = 25C Derate above 25C PD Unclamped Inductive Load Energy (Note 1) Operating and Storage Junction Temperature Range 0.4 Adc 30 0.24 AYWW TIPxxx Watts W/C 1 2 3 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 2.0 0.016 Watts W/C TO-220AB CASE 221A-09 STYLE 1 E 32 mJ xxx TJ, Tstg -65 to +150 C A Y WW THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Ambient Characteristic RJA 62.5 C/W Thermal Resistance, Junction-to-Case RJC 4.167 C/W = Specific Device Code: 29, 29A, 29B, 29C, 30, 30A, 30B, 30C = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 1. This rating based on testing with LC = 20 mH, RBE = 100 , VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz. Semiconductor Components Industries, LLC, 2002 June, 2002 - Rev. 7 1 Publication Order Number: TIP29B/D TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Collector-Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2) TIP29, TIP30 TIP29A, TIP30A TIP29B, TIP30B TIP29C, TIP30C VCEO(sus) Unit 40 60 80 100 - - - - - - 0.3 0.3 - - - - 200 200 200 200 IEBO - 1.0 mAdc hFE 40 15 - 75 - Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc) VCE(sat) - 0.7 Vdc Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc) VBE(on) - 1.3 Vdc Current-Gain -- Bandwidth Product (Note 3) (IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 - MHz Small-Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 - - OFF CHARACTERISTICS Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Vdc ICEO TIP29, TIP29A, TIP30, TIP30A TIP29B, TIP29C, TIP30B, TIP30C Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) (VCE = 60 Vdc, VEB = 0) (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) mAdc Adc ICES TIP29, TIP30 TIP29A, TIP30A TIP29B, TIP30B TIP29C, TIP30C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 3. fT = hfe* ftest. ORDERING INFORMATION Device Package Shipping TO 220AB TO-220AB 50 Units/Rail TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C http://onsemi.com 2 TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) 3.0 2.0 500 TJ = 150C VCE = 2.0 V 25C 100 70 50 t, TIME (s) hFE, DC CURRENT GAIN 300 -55C 30 10 7.0 5.0 0.03 1.0 0.7 0.5 0.3 0.2 0.05 0.07 0.1 0.5 0.7 1.0 0.3 IC, COLLECTOR CURRENT (AMP) 0.03 0.03 3.0 VCC t1 t3 APPROX +11 V t2 TURN-OFF PULSE 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 2.0 RC SCOPE 0.7 0.5 RB Cjd << Ceb t1 7.0 ns 100 < t2 < 500 s t3 < 15 ns Vin -4.0 V DUTY CYCLE 2.0% APPROX -9.0 V 0.3 0.1 0.07 0.05 0.03 0.02 0.03 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. 1 ms dc SECOND BREAKDOWN LIMITED THERMALLY LIMITED @ TC = 25C BONDING WIRE LIMITED TIP29, 30 CURVES APPLY BELOW TIP29A, 30A RATED VCEO TIP29B, 30B TIP29C, 30C 0.1 1.0 4.0 20 40 10 VCE, COLLECTOR-EMITTER VOLTAGE, (VOLTS) tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB(off) = 2.0 V 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TJ = 150C 3.0 IC/IB = 10 TJ = 25C Figure 4. Turn-On Time Figure 3. Switching Time Equivalent Circuit IC, COLLECTOR CURRENT (AMPS) tf @ VCC = 10 V Figure 2. Turn-Off Time 1.0 Vin Vin 0 0.1 tf @ VCC = 30 V IC, COLLECTOR CURRENT (AMP) t, TIME (s) TURN-ON PULSE APPROX +11 V 10 ts 0.1 0.07 0.05 Figure 1. DC Current Gain VEB(off) IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C 5 ms 100 Figure 5. Active Region Safe Operating Area http://onsemi.com 3 TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 A Q 1 2 3 U H K Z L R V J G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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