ZVN4525G
Datasheet Number: DS33383 Rev. 2 - 2
1 of 7
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March 2015
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ZVN4525G
NEW PR O D U C T
250V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
Max R
DS(on)
Max I
D
T
A
= +25°
°°
°C
250V 8.5Ω @ V
GS
= 10V 310mA
Description and Applications
This 250V enhancement mode N-Channel MOSFET provides users
with a competitive specification offering efficient power handling
capability, high impedance and is free from thermal runaway and
thermally induced secondary breakdown. Applications benefiting from
this device include a variety of telecommunication and general high
voltage circuits.
SOT89 and SOT23-6 versions are also available.
• Earth Recall and Dialing Switches
• Electronic Hook Switches
• High Voltage Power MOSFET Drivers
• Telecom Call Routers
• Solid State Relays
Features and Benefits
• High Voltage
• Low On-Resistance
• Fast Switching Speed
• Low Gate Drive
• Low Threshold
• Complementary P-Channel Type ZVP4525G
• SOT223 Package
• Lead-Free Finish; RoHS Compliant (Notes 1& 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram Below
• Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (Approximate)
Ordering Information
(Note 4)
Part Number
REEL SIZE
(inches)
TAPE WIDTH (mm)
Packaging
ZVN4525GTA 7 8mm Embossed 1,000
ZVN4525GTC 13 8mm Embossed 4,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
Top View Pin Out Top-View
Equivalent Circuit
SOT
2
23
D
S
G
YWW
ZVN
4525
ZVN 4525 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
Green
ZVN4525G
Datasheet Number: DS33383 Rev. 2 - 2
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March 2015
© Diodes Incorporated
ZVN4525G
NEW PR O D U C T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage V
DSS
250 V
Gate-Source Voltage V
GS
±40 V
Continuous Drain Current, V
GS
= 10V (Note 5) T
A
= +25°C I
D
310
248 mA
T
A
= +70°C
Pulsed Drain Current (Note 7) I
DM
1.44 A
Continuous Source Current (Body Diode) I
S
1.1 A
Pulsed Source Current (Body Diode) I
SM
1.44 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation at T
A
= +25°C (Note 5)
Linear Derating Factor
P
D
2
16
W
mW/°C
Junction to Ambient (Note 5) R
θJA
63
°C/W
Junction to Ambient (Note 6) R
θJA
26
°C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t ≤ 5 seconds.
7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to voltage spacing between conductors.
ZVN4525G
Datasheet Number: DS33383 Rev. 2 - 2
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ZVN4525G
NEW PR O D U C T
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Co
ndition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
250 285 — V I
D
= 1mA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
— 35 500 nA V
DS
= 250V, V
GS
= 0V
Gate-Body Leakage I
GSS
— ±1 ±100 nA V
GS
= ±40V, V
DS
= 0V
Gate-Source Threshold Voltage V
GS(th)
0.8 1.4 1.8 V I
D
= 1mA, V
DS
= V
GS
On-State Drain Current (Note 8)
I
D
(on)
3 — — A V
DS
= 25V, V
GS
= 10V
Static Drain-Source On-State Resistance (Note 8)
R
DS (ON)
— 5.6 8.5
Ω
V
GS
= 10V, I
D
= 500mA
— 5.9 9 V
GS
= 4.5V, I
D
= 360mA
— 6.4 9.5 V
GS
= 2.5V, I
D
= 20mA
Forward Transconductance (Note 10)
g
fs
0.3 0.475 — S V
DS
= 10V, I
D
= 0.3A
Diode Forward Voltage (Note 8) V
SD
— 0.97 V I
S
= 360mA, V
GS
= 0V,
T
J
= +25°C
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
C
is
s
— 72 — pF V
DS
= 25 V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
—
11
— pF
Reverse Transfer Capacitance C
rss
—
3.6
— pF
Total Gate Charge Q
g
— 2.6 3.65
nC
VDS = 25V, VGS = 10V,
ID = 360mA (refer to
test circuit)
Gate-Source Charge Q
gs
— 0.2 0.28
Gate-Drain Charge Q
gd
— 0.5 0.70
Turn-On Delay Time (Note 9) t
d
(on)
—
1.25
—
ns
V
DD
=
30V, I
D
= 360mA,
R
G
= 50Ω, V
GS
= 10V (refer to
test circuit)
Rise Time (Note 9) t
r
—
1.7
—
Turn-Off Delay Time (Note 9) t
d(off)
—
11.4
—
Fall Time (Note 9) t
f
—
3.5
—
Reverse Recovery Time t
rr
— 186 260 ns IF = 360mA, di/dt = 100A/µs,
TJ = +25°C
Reverse Recovery Charge Q
rr
— 34 48 nC
Notes: 8. Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZVN4525G
Datasheet Number: DS33383 Rev. 2 - 2
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© Diodes Incorporated
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NEW PR O D U C T
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT223
Dim
Min
Max
Typ
A
1.55 1.65 1.60
A1
0.010
0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
- - 4.60
e1
- - 2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
C2
8.00
A1A
7
°
7°
D
b
e
e1
b1 C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
XC
C1 Y2
ZVN4525G
Datasheet Number: DS33383 Rev. 2 - 2
7 of 7
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March 2015
© Diodes Incorporated
ZVN4525G
NEW PR O D U C T
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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