SOT-323 Plastic-Encapsulate Transistors MMST3904 = TRANSISTOR =[ NPN} FEATURES Power dissipation Pom: Oe W {Tamb=25 0 | Collector current ase kent 0.2 A Collactor-base voltage Vinriceo i 60 VW Operating and storage junction temperature range Ty, Teg $50 to +1500 1.BASE OT-323 2. EMIMTER J.COLLECTOR Lire ELECTRICAL CHARACTERISTICS ( Tamb=25 C unless ae otherwise specified) Parameter Symbal Teal conditions MIN MAX UNIT Collector-base breakdown voltage Vierecen k=10 pA, k=O 60 yV Collector-emitter breakdown vollage Viewcen k=tmaA, In=O 40 yV Emitier-base break down voltage Vieweno ke 10yA, k=O 5 yV Collector cut-off curremt leer Vee= GOV, eed o4 aw Collector cut-off currerit leeo Woes 40, [ped of aA Emitter cut-off current [esses Vee SV, feed of aw her Weee iV k= 10mA 100 300 De current gain her ia Vee 1 k= S0mA 60 Collector-emitter saturation vollage Vee sath Ees0 mA, lee Sma o.4 yV Base-emilter saturation vollage Vest sal) Eesti mA, Be SmA 0.35 Vv Transition frequency fi, ae 20V, b= 10mA 250 MHz Output Capacitance Gi ko 4 pF Delay time ty Von=3V, Vee=0.5V a5 ns Rise lime t ib=10mA4 , le=Im4 3 ns Storage time ts Veo=3V, n= Oma 200 ns Fall time th kv= l= Im 50 ns | Marking: K2N