BCV29 - NXP SEMICONDUCTORS - Datasheet.Directory

DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 08 2004 Dec 06

DISCRETE SEMICONDUCTORS

BCV29; BCV49

NPN Darlington transistors

ook, halfpage

M3D109

2004 Dec 06 2

NXP Semiconductors Product data sheet

NPN Darlington transistors BCV29; BCV49

FEATURES

•High current (max. 500 mA)

•Low voltage (max. 60 V)

•High DC current gain (min. 20 000).

APPLICATIONS

•Preamplifier input applications.

DESCRIPTION

NPN small-signal Darlingto n transistor in a su rface mount

SOT89 plastic package. PNP complements: BCV28 and

BCV48.

MARKING

PINNING

TYPE NUMBER MARKING CODE

BCV29 EF

BCV49 EG

PIN DESCRIPTION

1emitter

2collector

3base

321

sym08

TR1 TR2

Fig.1 Simplified outline (SOT89) and sy mbol.

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BCV29 SC-62 plastic surface mounted package; collector pad for good heat

transfer; 3 leads SOT89

BCV49

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NPN Darlington transistors BCV29; BCV49

LIMITING VALUES

In accordance with the A bsolute Maximum Rating System (IEC 60134).

Note

1. Device mounted on a pr inted-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

THERMAL CHARACTE RISTICS

Note

1. Device mounted on a pr inted-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volt a ge open emitter

BCV29 −40 V

BCV49 −80 V

VCES collector-emitter voltage VBE = 0 V

BCV29 −30 V

BCV49 −60 V

VEBO emitter-base voltage open collector −10 V

ICcollector current (DC) −500 mA

ICM peak collector current −1 A

IBM peak base current −200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −1.3 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 96 K/W

Rth(j-s) thermal resistance from junction to soldering point 16 K/W

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NPN Darlington transistors BCV29; BCV49

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current

BCV29 IE = 0 A; VCB = 30 V − − 100 nA

BCV49 IE = 0 A; VCB = 60 V − − 100 nA

IEBO emitter-base cu t-off current IC = 0 A; VEB = 10 V − − 100 nA

hFE DC current gain VCE = 5 V; see Fig.2

BCV29 IC = 1 mA 4 000 − −

IC = 10 mA 10 000 − −

IC = 100 mA 20 000 − −

IC = 500 mA 4 000 − −

DC current gain VCE = 5 V; see Fig.2

BCV49 IC = 1 mA 2 000 − −

IC = 10 mA 4 000 − −

IC = 100 mA 10 000 − −

IC = 500 mA 2 000 − −

VCEsat collector-emitte r sa turation v oltage IC = 100 mA; IB = 0.1 mA − − 1 V

VBEsat base-emitt er saturation voltage IC = 100 mA; IB = 0.1 mA − − 1.5 V

VBEon base-emitter on-state voltage IC = 10 mA; VCE = 5 V − − 1.4 V

fTtransition freque ncy IC = 30 mA; VCE = 5 V; f = 100 MHz −220 −MHz

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NPN Darlington transistors BCV29; BCV49

Fig.2 DC current gain; typical values.

handbook, full pagewidth

60000

80000

20000

40000

MGD837

10−11IC (mA)

hFE

10 102 103

VCE = 2 V.

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NPN Darlington transistors BCV29; BCV49

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 04-08-03

06-03-16

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

2004 Dec 06 7

NXP Semiconductors Pr oduct dat a shee t

NPN Darlington transistors BCV29; BCV49

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

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warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificat ion.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other cond itions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the tech nical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/06/pp8 Date of release: 2004 Dec 06 Document orde r number: 9397 750 13863