BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M
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Rev. 1.8, 20-Feb-18 1Document Number: 86029
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Avalanche Sinterglass Diode
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Fast rectification and switching diode
949539
click logo to get started
Available
Models
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYT52M BYT52M-TR 5000 per 10" tape and reel 25 000
BYT52M BYT52M-TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYT52A VR = 50 V; IF(AV) = 1.4 A SOD-57
BYT52B VR = 100 V; IF(AV) = 1.4 A SOD-57
BYT52D VR = 200 V; IF(AV) = 1.4 A SOD-57
BYT52G VR = 400 V; IF(AV) = 1.4 A SOD-57
BYT52J VR = 600 V; IF(AV) = 1.4 A SOD-57
BYT52K VR = 800 V; IF(AV) = 1.4 A SOD-57
BYT52M VR = 1000 V; IF(AV) = 1.4 A SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse voltage See electrical characteristics
BYT52A VR = VRRM 50 V
BYT52B VR = VRRM 100 V
BYT52D VR = VRRM 200 V
BYT52G VR = VRRM 400 V
BYT52J VR = VRRM 600 V
BYT52K VR = VRRM 800 V
BYT52M VR = VRRM 1000 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 50 A
Average forward current l = 10 mm IF(AV) 1.4 A
On PC board IF(AV) 0.85 A
Non repetitive reverse avalanche energy I(BR)R = 0.4 A
BYT52J ER10 mJ
BYT52K ER10 mJ
BYT52M ER10 mJ
Junction and storage temperature range Tj = Tstg -55 to +175 °C
BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M
www.vishay.com Vishay Semiconductors
Rev. 1.8, 20-Feb-18 2Document Number: 86029
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, TL = constant RthJA 45 K/W
On PC board with spacing 25 mm RthJA 100 K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 1 A VF--1.3V
Reverse current VR = VRRM IR--5μA
VR = VRRM, Tj = 150 °C IR- - 150 μA
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 200 ns
0
20
40
80
60
100
120
151050 202530
RthJA - Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
949552
ll
TL = constant
IF - Forward Current (A)
0.001
0.01
0.1
1
10
0 0.5 1.0 1.5 2.0 3.02.5
VF - Forward Voltage (V)
16328
Tj = 25 °C
Tj = 175 °C
16329
I
FAV
- Average Forward Current (A)
0 20 40 60 80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
1.6
1.2
1.4
1.0
0.8
0.6
0.4
0.2
0
VR = VRRM
half sinewave
RthJA = 100 K/W
PCB: d = 25 mm
RthJA = 45 K/W
I = 10 mm
1
10
100
1000
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16330
I
R
- Reverse Current (μA)
VR = VRRM
BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M
www.vishay.com Vishay Semiconductors
Rev. 1.8, 20-Feb-18 3Document Number: 86029
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
50
250
100
300
150
350
200
450
400
500
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16331
P
R
- Reverse Power Dissipation (mW)
PR-Limit
at 100 % VR
PR-Limit
at 80 % VR
VR = VRRM
0
5
10
15
25
35
20
30
40
0.1 1 10 100
VR - Reverse Voltage (V)
16332
CD - Diode Capacitance (pF)
f = 1 MHz
20543
3.6 (0.142) max.
26 (1.024) min. 4 (0.157) max. 26 (1.024) min.
0.82 (0.032) max.
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Revision: 08-Feb-17 1Document Number: 91000
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