MBR20100CTW
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – 100
FORWARD CURRENT – 20 Amperes
FEATURES
•
Metal of silicon rectifier, majority carrier conduction
•
Guard ring for transient protection
•
Low power loss, high efficiency
•
High surge¤t capability, low VF
•
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
•
Case: TO-220AB molded plastic
•
Polarity : As marked on the body
•
Weight : 0.08 ounces, 2.24 grams
•
Mounting position: Any
•
Max. mounting torque=0.5 N.m (5.1 Kgf.cm)
•
Case Material: “Green” molding compound, UL flammability
classification 94V-0, (No Br. Sb. Cl.)
• Terminal finish : Matted plating
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER SYMBOL
MBR20100CTW UNIT
Maximum Repetitive Peak Reverse Voltage V
RRM
100 V
Maximum RMS Voltage V
RMS
70 V
Maximum DC Blocking Voltage V
DC(AV)
100 V
Average Rectified Output Current @Tc=110°C I
F
20 A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load I
FSM
150 A
Maximum Forward Voltage
Note(1)
IF=10A@
IF=10A@
IF=20A@
IF=20A@
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
F
0.85
0.75
0.95
0.85
V
Maximum DC Reverse Current at Rated DC
Blocking Voltage
Tj=25°C
Tj=125°C IR 0.01
10 mA
Typical thermal resistance Junction to Case (Note 3) R
Θ
JC
2.5 °C/W
Typical thermal resistance Junction to Lead (Note 3) R
Θ
JL
2.5 °C/W
Typical Thermal Resistance (Note 2) C
J
250 pF
Operating junction temperature range T
J
-55 to +150 °C
Storage temperature range T
STG
-55 to +150 °C
Note : REV. 2, Feb-2012, KTHC96
(1) 300us Pulse Width, 2% Duty Cycle.
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 V
DC
.
(3) Thermal Resistance test performed in accordance with JESD-51. Unit mounted on 0.75t glass-epoxy substrate with 75 x 75 x 2 copper plate
heatsink, pad.