15. MISCELLA NOUS TRANSISTORS IN ORDER OF: (1)CATEGORY,(2)TYPE NO. as mac DESCRIPTION 2N3033 2N3034 2N3035 Pi-3O0OmW;BVCBO-T60V max:IC-TOA peak:tr-2nsec max:td-3nsec max. Pt-30O0mW;BVCBO-120V max;IC-10A peak:tr-2nsec max:td-3nsec max. Pt-300mW;BVCBO-90V max;IC-10A peak;tr-2nsec max;td-3nsec max. 2N5271f ~ CK273 CK277 VWa2224224 Pt 6OOmW:BVCEV 280V max,ICER 20nA max;iCER(H) 500uA min;VO 100V min. Po-.25W max; BVCBO-25V. Ps-.25W_ max; BVCBO-9OV. 2N592 ~ 2N593 2N594 v3 b> Pr T25mMW;BVCBO 20V;ICBO 5.0uAjhfe 40typ;Cob 35p typ:NF 16db;fab 400k min Pt 125mW;BVCBO 40V;ICBO .QuA;hfe 80typ;Cob 35p typ:NF 16db;fab 600k min Pt 100mW:BVCBO 20V;ICBO 5.QuA;hfe 30typ;Cob 15p typ:;NF 16db;fab 1.5M min 2N595 2N596 2N1169 Pt 100mW;BVCBO 15V;ICBO S.0uA;hfe 45typ;Cob 15p typ:;NF 16db;fab 3.0M min Pt 100mW:BVCBO 10V;ICBO 5.0uA;:hfe 6Otyp;Cob 15p typ;NF 16db;fab 5.0M min Pt_120mW;BVCBO 40V max;VP 20V_ max;fab 4.5MHz min;hFE 20 min. aout : TH hWN = OB 1 | 2N1170 2N1640 2N1641 Zz2zi2 SSS DE >>> > DID > > Pt T20mW:BVCBO 40V max;VP 39V max;fab 4.5MHz min;hFE 20 min. Po-.25 Wmax;BVCBO-30V;1C-5OmAmax;fab-.40Mc typ. Pc-.25W_ max;BVCBO-30V;IC-5OmA max;fab-.80Mc Typ. 2N1642 2N1891* 2N1994 WU SB Pb Pc. 25W max;BVCBO-30V;IC-5OmA max;fab-1.2Mc Typ. Pc- 150mW:VEBO-25V max;VCBO-25V max;fab-5.0Mc min. Pc. 15W max;BVCBO-30V;IC-.30A max;ton-1500ns;toff-1800ns;fab-3Mc NN al = S| ps O/C i Gy 2N1995 _ 2N1996 2N2474 PPP Po TSW max;BVCBO-25V;IC-.30A max;ton-1300ns;toff-1800ns;fab-5Mc Pc-.15W max;BVCBO-20V;IC-.30A max;ton-1100ns;toff-1800ns;fab-8Mc Pc-.25W_max;BVCBO-30V;BVEBO-30V;BVCEO-15V;hFE-15;VO-6mV_ max. seh 2N2968 2N2969 2N2970 wWIZzZZzzZ PP Pd-150mW max;hFE-15 at TOOUA;BVCEO-3OV; IC-5OmA max. Pd-150mW max:hFE-15 at 10Q0uUA;BVCEO-30V; IC-5OmA max. Pd-150mW max;hFE-10 at 100uUA;BVCEO-20V; IC-5OmA max. 2N2971 AC 130 GT34S wWVv yD P3opeh pip > vip > a> > pip Pzze Pd-150mW max;hFE-10 at 1OQUA;BVCEO-20V; IC-5OmA max. Pc--14W max; BVCBO-20V; IC-.1A max; fab-2.0Mc. Pc-150mW;BVCBO-40V;BVEBO-40V;iCBO-100uajhfe-15 at _10ma. 2SJ55 2SJ56 3SK47*_ AD842 AD3954 AD3954A _ gem Oo [o7 MOS FET;toff 18ns,ton T2ns,tstg 9ns,Coss 700prCrss 60pF MOS FET;toff 18ns,ton 12ns,tstg 9ns,Coss 7OOpF,Crss 60pF Dual Gate Hi-Freq Ampl/Variable Resistor Dual GateiG 50pAmax:VGS(1-2)25mVmax:AVGS(1-2)/AT 40uV/7C Dual Gate;/iG 50pAmax;VGS(1-2)10mVmax:AVGS \/AT 10uV/C /AT SuV/C AD3955 AD3956 AD3958 T- 1-2 Qual GateJG 50pAmax;VGS(1-2) 10mVmax;AVGS(1-2 Dual Gate/iG 50pAmax;VGS(1-2)25mVmax;AVGS(1-2)/AT 25uV/C Dual Gate;/IG 50pAmax:VGS(1-2)25mVmax;AVGS(1-2)/AT 50uV/C Gate;/IG 50pAmax;VGS(1-2)25mVmax:AVGS(1-2)/AT_ 100uV/C 5 Ou VMOS; 30-175MHz; Po 7W:Vds 35;EFF 50%;Gain 12db VMOS;30-175MHz:Po 25W;VDS 35;EFF 50%;Gain 10db min VMOS:30-175MHz:Po SOW;Vds 35;EFF 50%; Gain 9db min VMOS;30-175MHz:Po TOOW:Vds 35;EFF 50% min;Gain 8db min Broadband R.F.Amp;Dual,Matched for Vpot25mV.gmt5%;Thru SOOMHz Ultra Low Noise;Dual,Matched for Vpot25mV,gmt5%;Max Vpo 3.0V Low Ron Switching;Max Rds(On) 7.00;ldss Min 750mA;Vp-10V High Conduct Rect;Vprv 20V;VF .8V;IF 40A;Pt 32W:IR 100mADC High Conduct Rect;Vprv_25V:VF_.8V;IF 40A;Pt 32W;IR_ 100mADC HCR1050 High Conduct Rect;Vprv 30V:VF .8V;IF 40A;Pt 32W:IR 100mADC High Conduct Rect;Vprv 40V:VE .8ViF 40A;PT 32WiIR 100mADC High Conduct Rect;Vprv 50V;VF_8VAF 40A;PT 32W:IR 100mADC HCR1070 HCR1100 PTC181 VWIVVYVVASSZAZSVSZVCVVYvVvIZzvdsvsy High Conduct Rect:Vprv 7OV:VF .8V;IF 40A;PT 32W;IR TOOmADC High Conduct Rect;Vprv 100V;VF .8V;IF 40A;PT 32W:IR 100mADC Ciual Gate VHF Mosfet;gfs 8.0m Mhos:VDs 25V;Pd 1.2W;IG 10/10mA Max PTC182~ PTC184 SA2345 D rc Ciual Gate VHF Mosfet;gfs 30m Mhos;:VDs 27V;Pd 1.2W iG 10/10mA Max Dual Gate VHF Mosfet:gfs 9.0m Mhos;VDs 20V;Pd 360mW;IG 10/10mA Max EVDGO-50V_ miniGSS-.50nA max;RP-.8Omohms minjIG--20nA max. SK3187-RT SK3448-RT {SK35314-AT__ 2N1019 2N529 |2N530 2N531 2N532 |2N533 2N2707 2N3773 2N3838t Dual;PT 360mW; iD 50mA:VDS 27VDS I15mMANVGS JT and 2 6.0V.gfs 25mMho Jdunction:;PT 150mW:ID 10mA;VDG 30V;