MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description * 12 A, 60 V. RDS(ON) = 0.18 @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. * Critical DC electrical parameters specified at elevated temperature. * Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. * Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). * 175C maximum junction temperature rating. D G D G TO-220 S S Absolute Maximum Ratings TC = 25C unless otherwise noted Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage 15 V ID Drain Current - Continuous 12 A - Pulsed 42 Symbol PD TJ, TSTG Parameter Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range 48 0.32 -65 to +175 W W/C C 3.13 C/W C/W Thermal Characteristics R JC Thermal Resistance, Junction-to- Case R JA Thermal Resistance, Junction-to- Ambient (Note 1) 62.5 Package Outlines and Ordering Information Device Marking Device Package Information Quantity MTP3055VL MTP3055VL Rails/Tubes 45 units * Die and manufacturing source subject to change without prior notification. 1999 Fairchild Semiconductor Corporation MTP3055VL Rev. A1 MTP3055VL June 2000 DISTRIBUTION GROUP* Symbol T C = 25C unless otherwise noted Parameter Test Conditions DRAIN-SOURCE AVALANCHE RATINGS w DSS IAR BV DSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse On Characteristics V GS(th) V GS(th) TJ R DS(on) V DS(on) g FS Typ Max Units 72 mJ 12 A (Note 2) Single Pulse Drain-Source V DD = 25 V, ID = 12 A Avalanche Energy Maximum Drain-Source Avalanche Current Off Characteristics BV DSS Min V GS = 0 V, ID = 250 A 60 ID = 250 A, Referenced to 25 C V mV/ C 55 A V DS = 60 V, V GS = 0 V 10 V DS = 60 V, V GS = 0 V, T J = 150 C V GS = 15 V, V DS = 0 V 100 100 nA V GS = -15 V, V DS = 0 V -100 nA (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Drain-Source On-Voltage On-Resistance Forward Transconductance V DS = V GS , ID = 250 A ID = 250 A, Referenced to 25 C 1 1.6 V GS = 5 V,ID = 6 A, 0.100 V GS = 5 V,ID = 12 A V DS = 8 V, ID = 6 A 2 5 V mV/ C -4 0.180 2.6 V 8.7 S Dynamic Characteristics C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge V DS = 25 V, V GS = 0 V, f = 1.0 MHz 345 570 pF 110 160 pF 30 40 pF (Note 2) V DD = 30 V, ID = 12 A, V GS = 5 V, R GEN = 9.1 20 ns 190 ns Turn-Off Delay Time 30 ns Turn-Off Fall Time 90 ns 10 nC V DS = 48 V, ID = 12 A, V GS = 5 V 7.8 1.7 nC 3.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current (Note 2) 12 A ISM Maximum Pulsed Drain-Source Diode Forward Current (Note 2) 42 A V SD Drain-Source Diode Forward Voltage Drain-Source Reverse Recovery Time (Note 2) 1.3 V trr V GS = 0 V, IS = 12 A IF =12 A, di/dt = 100A/s 55 nS Notes: 1. RJA is the sum of the juntion-to-case and case-to-ambient thermal resistance. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% MTP3055VL Rev. A1 MTP3055VL Electrical Characteristics TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11