600 V, 40 A Field Stop IGBT General Description Using novel field stop IGBT technology, ON Semicondcutor's field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch-ing losses are essential. Features * High Current Capability * Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A * High Input Impedance * Fast Switching * RoHS Compliant Applications * Solar Inverter, UPS, Welder, PFC E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Ratings Unit Collector to Emitter Voltage 600 V Gate to Emitter Voltage 20 Transient Gate-to-Emitter Voltage 30 Symbol VCES VGES IC ICM (1) PD Description V Collector Current @ TC = 25oC 80 A Collector Current @ TC = 100oC 40 A Pulsed Collector Current @ TC = 25oC 120 A o Maximum Power Dissipation @ TC = 25 C 290 W Maximum Power Dissipation @ TC = 100oC 116 W TJ Operating Junction Temperature -55 to +150 o C Tstg Storage Temperature Range -55 to +150 o C TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds oC 300 Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (c)2008 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Typ. Max. - 0.43 o C/W 40 o C/W - 1 Unit Publication Order Number: FGH40N60UF/D FGH40N60UF -- 600 V, 40 A Field Stop IGBT FGH40N60UF Part Number Top Mark FGH40N60UFTU FGH40N60UF Package Packing Method TO-247 Parameter Tape Width Quantity N/A N/A 30 Tube Electrical Characteristics of the IGBT Symbol Reel Size TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A BVCES / TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 A - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA IC = 250 A, VCE = VGE 4.0 5.0 6.5 V IC = 40 A, VGE = 15 V - 1.8 2.4 V IC = 40 A, VGE = 15 V, TC = 125oC - 2.0 - V - 2110 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz - 200 - pF - 60 - pF Switching Characteristics td(on) Turn-On Delay Time - 24 - ns tr Rise Time - 44 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss VCC = 400 V, IC = 40 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 25oC - 112 - ns - 30 60 ns - 1.19 - mJ - 0.46 - mJ Ets Total Switching Loss - 1.65 - mJ td(on) Turn-On Delay Time - 24 - ns tr Rise Time - 45 - ns td(off) Turn-Off Delay Time - 120 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 0.69 - mJ Ets Total Switching Loss - 1.89 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCC = 400 V, IC = 40 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 125oC VCE = 400 V, IC = 40 A, VGE = 15 V www.onsemi.com 2 - 40 - ns - 1.2 - mJ - 120 - nC - 14 - nC - 58 - nC FGH40N60UF -- 600 V, 40 A Field Stop IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 120 120 20V 15V TC = 125 C 12V 15V 20V 100 Collector Current, IC [A] 100 Collector Current, IC [A] o o TC = 25 C 80 60 10V 40 12V 80 60 10V 40 20 20 VGE = 8V VGE = 8V 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 0 0.0 6.0 Figure 3. Typical Saturation Voltage Characteristics 6.0 Figure 4. Transfer Characteristics 120 120 Common Emitter VGE = 15V 100 o TC = 125 C 80 Common Emitter VCE = 20V 100 o TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 60 40 20 o TC = 25 C o TC = 125 C 80 60 40 20 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 0 4 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 6 7 8 9 10 11 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. VGE Common Emitter VGE = 15V 3.0 20 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 3.5 80A 2.5 2.0 1.5 1.0 25 40A IC = 20A 50 75 100 o Case Temperature, TC [ C] 125 Common Emitter o TC = - 40 C 16 12 8 40A 4 80A IC = 20A 0 4 www.onsemi.com 3 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGH40N60UF -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 80A 40A 4 IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 125 C 16 12 8 40A IC = 20A 0 20 4 Figure 9. Capacitance Characteristics 20 15 Common Emitter Common Emitter VGE = 0V, f = 1MHz Ciss o Gate-Emitter Voltage, VGE [V] 4000 Capacitance [pF] 8 12 16 Gate-Emitter Voltage, VGE [V] Figure 10. Gate charge Characteristics 5000 o TC = 25 C 3000 Coss 2000 1000 Crss 0 0.1 TC = 25 C 12 Vcc = 100V 200V 300V 9 6 3 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 50 100 Gate Charge, Qg [nC] 150 Figure 12. Turn-on Characteristics vs. Gate Resistance 400 200 100 10s 100 Switching Time [ns] Collector Current, Ic [A] 80A 4 100s 10 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 tr td(on) Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 25 C o TC = 125 C 10 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 0 www.onsemi.com 4 10 20 30 40 Gate Resistance, RG [] 50 FGH40N60UF -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 5500 500 Common Emitter VGE = 15V, RG = 10 o TC = 25 C o o TC = 25 C 1000 Switching Time [ns] Switching Time [ns] Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 125 C td(off) 100 tf TC = 125 C 10 20 30 40 td(on) 10 20 10 0 50 40 Gate Resistance, RG [] 80 Figure 16. Switching Loss vs. Gate Resistance 10 600 Common Emitter VGE = 15V, RG = 10 Common Emitter VCC = 400V, VGE = 15V o IC = 40A TC = 25 C o o TC = 125 C td(off) 100 tf 10 20 40 60 TC = 25 C Switching Loss [mJ] Switching Time [ns] 60 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current o TC = 125 C Eon Eoff 1 0.3 0 80 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [] 50 Figure 18. Turn off Switching SOA Characteristics 10 200 Common Emitter VGE = 15V, RG = 10 100 Collector Current, IC [A] Eon o TC = 25 C Switching Loss [mJ] tr 100 o TC = 125 C Eoff 1 10 Safe Operating Area o VGE = 15V, TC = 125 C 0.1 20 1 40 60 80 1 10 100 Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] www.onsemi.com 5 1000 FGH40N60UF -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 19.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.01 0.05 0.02 0.01 0.1 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec] www.onsemi.com 6 0.1 1 FGH40N60UF -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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