VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF Series
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Thyristor/Diode and Thyristor/Thyristor
(Super MAGN-A-PAK Power Modules), 500 A
FEATURES
• High current capability
• High surge capability
• Industrial standard package
• 3000 VRMS isolating voltage with non-toxic
substrate
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Motor starters
• DC motor controls - AC motor controls
• Uninterruptible power supplies
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV), IF(AV) 500 A
Type Modules - thyristor, standard
Package Super MAGN-A-PAK
Super MAGN-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IT(AV) , IF(AV) TC = 82 °C 500 A
IT(RMS) TC = 82 °C 785 A
ITSM
50 Hz 17.8 kA
60 Hz 18.7
I2t50 Hz 1591 kA2s
60 Hz 1452
I2t15 910 kA2s
VRRM Range 800 to 1600 V
TStg Range -40 to +150 °C
TJRange -40 to +130
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM/IDRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-VSK.500
08 800 900
100
12 1200 1300
14 1400 1500
16 1600 1700
VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF Series
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ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
IT(AV),
IF(AV)
180° conduction, half sine wave 500 A
82 °C
Maximum RMS on-state current IT(RMS) 180° conduction, half sine wave at TC = 82 °C 785 A
Maximum peak, one-cycle,
non-repetitive on-state surge current
ITSM,
IFSM
t = 10 ms No voltage
reapplied
Sinusoidal
half wave,
initial TJ = TJ maximum
17.8
kA
t = 8.3 ms 18.7
t = 10 ms 100 % VRRM
reapplied
15.0
t = 8.3 ms 15.7
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
1591
kA2s
t = 8.3 ms 1452
t = 10 ms 100 % VRRM
reapplied
1125
t = 8.3 ms 1027
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 15 910 kA2s
Low level value or threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.85 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.93
Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.36 m
High level value on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.32
Maximum on-state voltage drop VTM Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.50 V
Maximum forward voltage drop VFM Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.50 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 500 mA
Maximum latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of rise of turned-on current dI/dt TJ = TJ maximum, ITM = 400 A, VDRM applied 1000 A/μs
Typical delay time td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 2.0
μs
Typical turn-off time tq
ITM = 750 A; TJ = TJ maximum, dI/dt = - 60 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage dV/dt TJ = 130 °C, linear to VD = 80 % VDRM 1000 V/μs
RMS insulation voltage VINS t = 1 s 3000 V
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied 100 mA
VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF Series
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Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10 W
Maximum peak average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current +IGM
TJ = TJ maximum, tp 5 ms
3.0 A
Maximum peak positive gate voltage +VGM 20 V
Maximum peak negative gate voltage -VGM 5.0
Maximum DC gate current required to trigger IGT TJ = 25 °C, Vak 12 V 200 mA
DC gate voltage required to trigger VGT 3.0 V
DC gate current not to trigger IGD TJ = TJ maximum 10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range TJ-40 to +130 °C
Maximum storage temperature range TStg -40 to +150
Maximum thermal resistance,
junction to case per junction RthJC DC operation 0.065
K/W
Maximum thermal resistance,
case to heatsink per module RthC-hs Mounting surface smooth, flat and greased 0.02
Mounting
torque
± 10 %
Super MAGN-A-PAK to heatsink A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound
6 to 8
Nm
busbar to super MAGN-A-PAK 12 to 15
Approximate weight 1500 g
Case style See dimensions - link at the end of datasheet Super MAGN-A-PAK
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.009 0.006
TJ = TJ maximum K/W
120° 0.011 0.011
90° 0.014 0.015
60° 0.021 0.022
30° 0.037 0.038
VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF Series
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Revision: 26-Jul-2018 4Document Number: 94420
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
VSK.500.. Series
R (DC) = 0.065 K/ W
thJC
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800 900
DC
30° 60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduc tion Period
VSK.500.. Series
R (DC) = 0.065 K/ W
thJC
0
100
200
300
400
500
600
700
0 100 200 300 400 500
RM S Li m i t
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.500.. Series
Pe r Ju nc t io n
T = 1 3 0 ° C
J
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 700 800
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.500.. Series
Pe r Ju n c t i o n
T = 1 3 0 ° C
J
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
110100
Numbe r Of Equa l Amp litude Half Cyc le Current Pulses (N)
Peak Half Sine Wave On-sta te Current (A)
Init ial T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Ra t ed V Ap p lie d Fo llowing Surg e .
RRM
VSK.500.. Se ries
Pe r Ju n c t io n
6000
8000
10000
12000
14000
16000
18000
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Tra in Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Dura tion. Control
Of Conduction May Not Be Maintained.
Initial T = 130°C
No Volta g e Reapplied
Ra t e d V Re a p p l i e d
RRM
J
VSK.500.. Series
Pe r Jun c t i o n
VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF Series
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Fig. 7 - On-State Power Loss Characteristics
Fig. 8 - On-State Power Loss Characteristics
Fig. 9 - On-State Power Loss Characteristics
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.07K/W-DeltaR
0.09K/W
0.12K
/W
0.16K/W
0.2K/W
0.3K
/W
0.4K
/W
0.6K
/W
thS
A
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
0 100 200 300 400 500 600 700 800
180°
120°
90°
60°
30°
To t a l RM S O u t p u t C u r r e n t ( A )
Maximum Total On-state Power Loss (W)
Conduction Angle
VSK.500.. Series
Pe r M o d u le
T = 130°C
J
020406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.01K/W-DeltaR
0.02K/W
0.03K/W
0.05K
/W
0.08K
/W
0.12K
/W
0.2K
/W
thS
A
0
500
1000
1500
2000
2500
3000
0 200 400 600 800 1000
Total Output Current (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x VSK.500.. S e ries
Si n g l e Ph a se Br i d g e
Connected
T = 130°C
J
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.01K/W-DeltaR
0.02K/W
0.03K
/W
0.05K
/W
0.08K
/W
0.2K
/W
thS
A
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 250 500 750 1000 1250 1500
Total Output Current (A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x VSK.500.. Se rie s
Th r e e Ph a se Br i d g e
Connected
T = 1 3 0 ° C
J
VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF Series
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Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance ZthJC Characteristics
Fig. 12 - Gate Characteristics
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 1 3 0 ° C
J
VSK.500.. Serie s
Pe r Ju n c t i o n
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Sq u a r e Wa v e Pu l se D u r a t i o n ( s)
thJC
Tra n si e n t Thermal Impedance Z (K/W)
VSK.500.. Se ries
Pe r Ju n c t i o n
St e a d y St a t e V a l u e :
R = 0.065 K/ W
(DC Operation)
thJC
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj =2 5 ° C
Tj = - 4 0 ° C
(2) (3)
In st a nt a n e o u s G a t e C u rre n t ( A )
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
Tj = 1 3 0 ° C
VSK.500.. Series Frequency Limited by PG(AV)
(4)
- Circuit configuration (see end of datasheet)
- Current rating
- Voltage code x 100 = VRRM (see voltage ratings table)
- Lead (Pb)-free
Device code KTVS-VS 500 - 16 PbF
2
3
4
5
21 43 5
1- Vishay Semiconductors product
VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF Series
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CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING
Two SCRs doubler circuit KT
SCR/diode doubler circuit, positive control KH
SCR/diode doubler circuit, negative control KL
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95283
+
7
(K2)
6 (G2)
-
4
(K1)
5 (G1)
~
1
2
3
VSKT...
+
-
4(K1)
5(G1)
~
1
2
3
VSKH...
+
7(K2)
6(G2)
-
~
1
2
3
VSKL...
Outline Dimensions
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Super MAGN-A-PAK Thyristor/Diode
DIMENSIONS in millimeters (inches)
60.0 (2.36)
48.0 (1.89)
31.0
(1.22)
50.0
(1.97)
44.0
(1.73)
17 (0.67) max.
19 (0.75)
M10
Fast-on tabs
2.8 x 0.8 (0.11 x 0.03)
17.8
(0.70)
36.4 (1.14)
4.5 (0.20)
54
6
5, 6 = Gate
4, 7 = Cathode
7
28.0
(1.10)
26.0
(0.98)
26.0
(0.98)
112.0 (4.41)
124.0 (4.88)
149.0 (5.67)
1.0 (0.039)
32
1
Ø 6.5 mm ± 0.3 mm x 4 holes (Typ.)
52 (2.05)
9.9 ± 0.5 (0.39 ± 0.02)
18 (0.71) max.
48 (1.90)
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