+ MR AP G E SOLID STATE Ob pe ff 3a750a1 OO17?b74 Q I 3875081 GE SOLID STATE : OIE 17678 > TeS7 Silicon Controlled Rectifiers 2N3654, 2N3655, 2N3656, 2N3657, 2N3658, S7412M File Number 724 35-A Silicon Controlled TERMINAL DESIGNATIONS Rectifiers . CATHODE For Inverter Applications Features: w Fast turn-off time ~- 10 us max. High di/dt and dv/dt capability Low thermal resistance RCA-2N3654 to 2N3658, inclusive, and the S7412M* are ==. ANODE all-diffused silicon controlled rectifiers (reverse-blocking triode thyristors) intended for high-speed switching appli- cations such as power inverters, switching regulators, and high-current pulse applications. They feature fast turn-off, high dv/dt, and high di/dt characteristics and may be used at frequencies up to 25 kHz. The 2N3654 to 2N3658 have forward and reverse off-state voltage ratings of 50, 100, 200, 300, and 400 volts, respec- tively. Type S7412M has a forward and reverse off-state voltage rating of 600 volts. These SCRs employ a harmetic JEDEC TO-208AA package. "Formerly RCA Type No. $7432M. 928-277 31K1 JEDEC TO-208AA MAXIMUM RATINGS, Absolute-Maximum Values: 2N3654 2N3655 2N3656 2N3657 2N3658 $7412M "Vasomt .cccesceeseseneee beveurtceeee 75 150 300 4c0 500 700 Vv Vosomt ..- ccs cee e sentence ees . 75 150 300 400 500 700 v Vanomtevsecescateeveneenseeees 50 100 200 300 400 600 v Vonomt ccscecevscccuressvevees 50 100 200 300 400 600 Vv Irramss (Te = 40C, 8 = 180).......,. 35 A Inaw (Te = 40C, @ = 180) .......... 25 A Irsu: For one full cycle of applied principal voltage 60-Hz (Rectan- gular wave-pw = 5 ms, t, = 50 ys), Te = 40C coe cece cece cece 180 A *di/dt: Vo = Vosom, Ior = 200 mA, t, = 0.1 ps (See Fig. 15) ...... ec cee evuceceneee 400 Alus ft: Ts = -65 to 120C, t=1to83ms.... 165 A2s * Paral: Peak (forward or reverse) for 10us maximum, See Fig. 7) 40 Ww *Peuvil: Avaraging time = 10 ms maximum... 4 WwW *Tato* . -65to150_ Ter 65to120. 8G tT During soldering for 10 s maximum (terminal and case).,........... 225 = C Ts? Recommended............cceeeeeee 35 in-Ibf 0.4 kgf-m Maximum (OO NOT EXCEED) ...... 50 in-Ibf 0.57 kgf-m * inaccordance with JEDEC registration data format (JS-14, RDF-1) filed for the JEDEC (2N series) types. + These values do not apply if there is a positive gate signal. Gate must be open or negatively biased. Any product of gate current and gate voltage which results in a gate power less than the maximum Is permitted. * For temperature measurement reference point, see Dimensional Outline. 684 1221 C-12* GE SOLID STATE oi pe aazsoa. ooue79 1 9 3875081 G E SOLID STATE ~ O1E 17679 DB T-2Z8-/7 Sillcon Controlled Rectifiers 2N3654, 2N3655, 2N3656, 2N3657, 2N3658, S7412M ELECTRICAL CHARACTERISTICS At Maximum Ratings Untess Otherwise Specified and at Indicated Case Temperature (Tc) LIMITS FOR ALL TYPES CHARACTERISTIC Except as Specified UNITS MIN. | TYP. | MAX. 'pom oF tROM: > Vp = Vprom F Va = Varom Tc = 120C 2N3654, 2N3655, 2N3656, $7412M .........5000 - 2 6* mA QNSGE7 Lecce cece n eee eee eens - 2 5.5* 2N3658 2... eee nent eee ete eees - 2 4* YT: iT = 25 A (peak), TO= 25C oo sees eee eee eee - 1.5 2.05* V ino: To HOBO ccc cee eee tenet renter neees - 75 150 mA TOE HEB OS eect e eee e renee - 150 350* *| dv/dt: Vo= VpROM: exponential voltage rise, Tot 120C (See Fig. 16) 20... c eee eee cee eee eee 200 ~ V/us let: Vp = 6V (de), RE F402, TE = 2B CO... eee - 80 180 mA Vp =6V (de), RE = 22, TE =-65C Woe - 150 500* Vet: 3 Vp = 6V (de), RL 249, TE = 25 Co. .a eee eee - 1.6 3 *| Vp =6V (de), Ry = 2002, To = 120C... 0.25 | - - Vv Vp = 6V (de), RL= 22, TE =-65C veces eee [= 2 4.5* *l tq: Rectangular Pulse Vox = Vorom. i7 = 104A, pulse duration = 50 ps, dv/dt = 200 V/us, ~di/dt = 5 A/us, [gy = 200 mA at turn-on, Vryx = 15 V minimum, Vg = 0 Vat turn-off, Te = 120C (See Figs. 17 & 18) ....... 005, - - 10 Sinusoidal Pulse us Vpx = VprRom it = 100 A, pulse duration = 2 us, dv/dt = 200 Vius, Vay = 30 V minimum, Vex =0 at turn-off, To = 118C (See Figs. 19 & 20) ......... - - 10 a 0 ~ 0.85 1.7*] C/W * In accordance with JEDEC registration data format (JS-14, RDF-1) filed for the JEDEC (2N series) types. 685 1222 c-13G E SOLID STATE on eff sazsos1 oo17ea0 5 [ 3875081 GE SOLID STATE o1 17680. D T=Z2S-!7 Silicon Controtled Rectifiers 2N3654, 2N3655, 2N3656, 2N3657, 2N3658, S7412M CURRENT WAYEFOR@ tte -~-, o suk? z i - 2 z 2 5 8 6 i g S z $ . . rino A T + _] rt Yasow*t Veron to Yorow 9288+ 3896RS 0 Pry Fig. 1 Principal voltage-current characteristic. PEAK OW STATE CURRENT (itu) = veal ma Fig, 2 Power dissipation vs. peak on-state current. AVITCHING LOSSES ANE HEGLECTEO CURRENT WAVEFQRw ITN TI ne 2 s 2 i = g 3 & id z z i = a ; ree OOSTATE CURRENT UT gl- 4 ween PEAK ON STATE CURRENT {itg)- A esas Fig. 3 Maximum allowable case-temperature vs. peak on-state current, Fig. 4 ~ Power dissipation vs. peak on-state current, SVETCHING LOSSES ANE HEGLECTEO CUMSENT WAYEFOR A TEMPERATURE {Tcl 35C we . z : nh ble 5 =| = 4 : e 4 g = 3 3 = Z 5 5 3 3 2a a a 5 i 1 a d a 5 PERE OW-STATE CURREMT (yy) - 4 OM STATE YOUTAGE (y7}- . . wad wow Fig. 5 Maximum allowable case-temperature vs, peak on-state current, Fig. 6 Variation of on-state with on-state voltage. 686 1223 C-14 botG E SOLID STATE 3875081 G E SOLID STATE Oo] Def sazsoai consi o O1E 17681 Silicon Controlled Rectifiers 2N3654, 2N3655, 2N3656, 2N3657, 2N3658, S7412M BISTANTANEGUS OFF-STATE VOLTAGE (2px) ~ RATE OF RISE OF OFF-STATE VOLTAGE (dr &) ity. PEAK REVERSE VOLTAGE (Vayu) = 2009 LF SINE-KAVE CURRENT WAVE FORM CASE TENE ERATURE it 5 oC PEAK REVERSE RECCVERY CURRENT mn PEAX ON-STATE CURRENT itty) - a 1 Fig. 7 Typical variation of paak reverse-racavery current with peak on-state current (half-sine-wave pulse). Oc) 1208 PULSE (OH-STATE CURRENT) WOTH*50ps PEAK REVERSE RECOVERY CURRENT Upxsi) =A Qo 1 a x RATE-OF DESCEHT OF OH STATE CURRENT (41 di}-A us eeOsAr Fig. 9 Typical variation of peak reverse-recovery current with rate-of-descent of on-state current (rectangular pulse). F-STATE VOLTAGE (px)= 6004 ATE OF RISE OF CFF-STATE VOLTAGE a/)= aK eoveRse vDLTAGE Wax): 20 ALE SINUSOIDAL CURRENT WAVE FORK & i PEAK OW STATE CURRENT (Iyx)~ A Fig. 11 Typical variation of turn-off time with peak on-state current (half-sine-wave pulse). REAPPLIED OFF-STATE VOLTAGE (Ypx) = b00 RECTANCULAR CURRENT PULSE RATE-OF-DESCENT OF ON STATE CURRENT Ld = 104 os PEAK REVERSE RECOVERY CURRENT s 10 8 a pe) s a s OW-STATE CURRENT (iq)-A ese Fig. 8 Typical variation of peak reverse- recovery current with on-state current (rectangular pulse). pate = us + a - . 5 & 2 an 1 JUNCTION TEMPERATURE {T))-C " em RAE Fig. 10 Typical variation of turn-off time with junction temperature (rectangular pulse). STATE CURRENT {7} = 20 A (RECTANGULAR PULSE} SE TEMPERATURE 0 100 mm RATE OF RISE OF REAPPLIED OFF.STATE VOLTAGE Uv/dib' in fa. Fig. 12 Typical variation of turn-off time with rate-of-rise of reapplied off-state voltage (rectangular pulse). 687 "4224 p-O1 dD T-25717G SOLID STATE 02 pep ss7sos, oo17.ae 1 3875081 G E SOLID STATE DiE 17682 D 3 T-Z2S-17 Silicon Controlled Rectifiers 2N3654, 2N3655, 2N3656, 2N3657, 2N3658, S7412M oq. fe &, tte a hy ssn SrogsP 1= RC 2CS-13365R3 Fig. 13 Rate-of-change of on-state currant with Fig. 14 Rate-ol-rise of off-state voltage with time time (defining di/dt). (defining dv/dt). FORWARD CURRENT CIRCUIT REVERSE CyReeNT Zz SUPPLY SUPPLY VOLTAGE VOLTAGE VRx fue enue TEST * W +,,1 L FOR ADDITIONAL INFORMATION . ON GATE TRIGGER CIRCUITS, ETC. REFER 70 JED! ARD +0 eRe >} No. 7 SECTION 6.204.2. Whe Na 3 i 7 - 9258-4375 LINEAR dv/dt CIRCUIT 288 Fig. 15 Circuit used to measure turn-off time (t.), ractangular pulse. tg = bn # ge FORWARD CURRENT CIRQUT. points defining turn-off time (t,), rectangular pulse. Dl la rr DEVICE adidt UNDER * \ + L S| Yt oe OT EEO} | I SUPPLY * VOLTAGE tram } | a me ee -9 4 4 ETO GATE TRIGGER CRCUIT i LA Yox RX i CONSTANT tye fo} 4, } +0 ou ent t " sassaait SLoceate VOLTAGE SUPPLY ssasn Fig. 16 Relationship between off-state voltage, Fig. 17 Circuit used to measure turn-off time reverse voltage, on-state current, and (ta), half-sine-wave pulse. reverse current showing reference f 688 . | 1225 D-02G E SOLID STATE O1 DE ff 3875081 OO17b44 3 IT ' 3875081 G E SOLID STATE "- o4e 17683 DO T*ZS-/7 : Sllicon Controlled Rectifiers 2N3654, 2N3655, 2N3656, 2N3657, 2N3658, S7412M Yox aA fd VOLTAGE ANODE-CATHODE = ' & = 2 & SESSANIE AMBIENT TEAPERATURE (T,)-*C ser Fig. 18 Relationship between off-state voltage, t reverse voltage, on-state current, and i reverse current showing reference ' points for specification of turn-off (tq), half-sine-wave pulse. Fig. 19 Heat sink guidance. corm oevenmmn er EOE | ERRNO 689