ROI WM 7428999 0008818 O44 MERHM Page bod Specification iProoucts an Hype 3. Das Tentative i dhe i cuba iucd 1. TYPE, 285K2102 2. DESCRIPTION, Silicon N-Channel MOS FET, 3. APPLICATION. Switching. 4. ABSOLUTE MAXIMUM RATINGS (Ta=2 5) Item Symbo | Rating Unit Drain-Source Voltage Vp Ss 30 Vv - + Gate-Source Voltage VG ss +20 Vv Drain Current I D 200 mA Power Dissipation Ph 200 mW Channel Temperature Tech 150 Storage Temperature Tstg ~55~150 o. ELECTRICAL CHARACTERISTICS (Ta=25T) Item Symbol Test Condition min. | typ. } max, Unit - =t = - om i+ Gate-Source Leak Current I GSS Vo S +20V, Voy S Ov +100} nA Drain-to-Source _ _ _ _ Breakdown Voltage Yeryoss| 1p= 1mA: Va g=OV) 30 Vv Zero Gate Voltage _ = _ _ Drain Current Toss | Yas 3Y) Veg=0V 10 }aA Gate Threshold Voltage Vos(off) Iy= lmA, Vogml OV! 0.5 - 1.81 V Forward Transfer _ _ _ _ J Admittance IY 6! TL =0.1A, Vog=iovV 50 mS Static Drain-to-Source _ _ _ _ On-State Resistance Roscon) I D- 0.14, Vo Ss Lov 2.0) 2 Input Capacitance Ciss Vo s =10V - 30 - pF Output Capacitance Coss {Vv Gsm ov - 15 - pF Reverse Transfer Crss|f=1MHz _ 10} | pF Capacitance Turn-On Delay Time t d(on) | V HFlsV, R. =10Q2 - 15 - ns DD in Rise Time tr Rp =isog - 25 - ns Turn-Off Delay Time t d (off) Vo s= 1OV - 80; - Ins Fall Time tf T,=0.1A - 300 - ns ROHM CO., LTD. [Design lApproval Specitication No Date PRKCTO2-4 . an ay Jan /12,93 | . | | ooROH Mi 7628999 0008819 T2 MBRHN Page Qok Bpecitication Pracucis een ue 25Sh2702 F igure 1, FD: f ig-8420 4+0,2 TYPE N Lot No. prot NO. 3 L ae; ee " | es Hl | : Hl | | | Jo.ast8-28 HT I HT yy 0 1.27 1,27 0.5 0.45/08 + UNIT:mm Nn = = (1) Source ae {aa (2) Drain ay (3) Gate 25 A factory APOLLO ELECTRONICS CO.,LTD. 883 Kamikitajima,Chikugo,Fukuoka 833. Japan The net weight 0. 1l3geYpce Two kind of marking are available Direct Laser Marking *Laser Marking on silver color under coated surface %Minimun order quantity for Bulk Packing: 2,000pcs/INNER CASE ROHM CO., LTD.