50A,600V Stealth Diode Features The FFH50US60S-F085 is a StealthTM diode optimized for low loss performance in output rectification.The STEALTHTM family exhibits low reverse recovery current(IRR),low VF and soft recovery under typical operating conditions. It has a low forward-voltage drop and is of silicon nitride passivated. This device is intended for use as a freewheel/clamping diode in various automotive switching power supplies and other power switching applications. Its low stored charge as well as StealthTM and soft recovery characteristics minimize ringing and electrical noise while reduce the overall power loss. * Stealth Recovery ( trr=163ns(Typ.) @ IF=50A ) * Low Forward Voltage( VF=1.69V(Max.) @ IF=50A ) * Avalanche Energy Rated * AEC-Q101 Qualified Applications * Automotive DCDC Converter * Automotive On Board Charger * Switching Power Supply * Power Switching Circuits Pin Assignments 1 1. Cathode TO-247-2L 1. Cathode 2 2. Anode 2. Anode Absolute Maximum Ratings TC = 25C unless otherwise noted Ratings Units VRRM Symbol Peak Repetitive Reverse Voltage Parameter 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current (Halfwave 1 Phase 50Hz) EAVL Avalanche Energy (1A, 40mH) TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics T C @ TC = 25C 50 A 150 A 20 mJ - 55 to +175 C Max Units = 25C unless otherwise noted Symbol Parameter RJC Maximum Thermal Resistance, Junction to Case RJA Maximum Thermal Resistance, Junction to Ambient 0.71 C/W 30 C/W Package Marking and Ordering Information Device Marking Device Package Tube Quantity FFH50US60S FFH50US60S-F085 TO-247-2L - 30 (c)2014 Semiconductor Components Industries, LLC. August-2017. Rev 3 Publication Order Number: FFH50US60S-F085/D FFH50US60S-F085 50A, 600V Stealth Diode FFH50US60S-F085 50A, 600V Stealth Diode C Symbol IR = 25C unless otherwise noted Parameter Conditions Instantaneous Reverse Current VR = 600V VFM 1 trr2 Typ. Max Units TC = 25 C - - 100 uA TC = 175 C - - 1000 uA Instantaneous Forward Voltage IF = 50A TC = 25 C TC = 175 C - 1.27 1.19 1.69 1.57 V V Reverse Recovery Time IF =1A, di/dt = 200A/s, VR = 390V TC = 25 C - 41 82 ns IF = 50A, di/dt = 200A/s, VR= 390V TC = 25 C TC = 175 C - 163 364 - ns ns IF = 50A, di/dt = 200A/s, VR= 390V TC = 25 C - 65 98 886 - ns ns nC Reverse Recovery Time ta tb Qrr Min. Reverse Recovery Charge Notes: 1. Pulse : Test Pulse width = 300s, Duty Cycle = 2% 2. Guaranteed by design Test Circuit and Waveforms trr Test Circuit VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE trr Waveforms and Definitions - dIF trr dt ta tb 0 + IGBT t1 IF CURRENT SENSE VDD 0.25 IRM IRM t2 Avalanche Energy Test Circuit Avalanche Current and Voltage Waveforms I = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT - t0 www.onsemi.com 2 t1 t2 t FFH50US60S-85 50A, 600V Stealth Diode Electrical Characteristics T Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 250 1000 100 100 o TC = 175 C Reverse Current , IR [A] Forward Current, IF [A] o TC = 175oC 10 T C = 125oC 1 o T C = 25 C 0.1 0.1 0.5 1.0 1.5 2.0 Forward Voltage, V F [V] 0.1 o T C = 25 C 0.01 1E-4 100 2.5 200 300 400 500 Reverse Voltage, VR [V] 600 Figure 4. Typical Reverse Recovery Time vs. di/dt 800 500 IF = 50A Reverse Recovery Time, trr [ns] Typical Capacitance at 10V = 99pF Capacitances , Cj [pF] 1 1E-3 Figure 3.Typical Junction Capacitance 600 400 200 0 0.1 1 10 Reverse Voltage, V R [V] 400 o TC = 175 C 300 o TC = 125 C 200 o T C = 25 C 100 0 100 100 200 300 di/dt [A/s] 400 500 Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt 150 40 IF = 50A Average Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] TC = 125 C 10 o TC = 175 C 30 o TC = 125 C 20 o T C = 25 C 10 0 100 200 300 di/dt [A/s] 400 500 www.onsemi.com 3 100 50 0 25 50 75 100 125 150 o Case temperature, TC [ C] 175 FFH50US60S-F085 50A, 600V Stealth Diode Typical Performance Characteristics FFH50US60S-F085 50A, 600V Stealth Diode Typical Performance Characteristics (Continued) Figure 7. Reverse Recovery Charge Reverse Recovery Charge, Q rr [nC] 5000 TC = 175oC I F = 50A 4000 3000 o TC = 125 C 2000 1000 o T C = 25 C 0 100 200 300 di/dt [A/s] 400 500 Figure 8. Transient Thermal Response Curve Z (t), Thermal Response thJC 1 D=0.5 PDM 0.2 0.1 t1 0.1 0.05 * Notes : 0.02 o 1. Z (t) = 0.71 C/W Typ. thJC 2. Duty Factor, D=t /t 1 2 0.01 0.01 -5 10 t2 -T =P *Z (t) 3. T JM C DM thJC single pulse 10 -4 -3 10 -2 10 -1 10 t , Square Wave Pulse Duration [sec] 1 www.onsemi.com 4 0 10 10 1 2 10 FFH50US60S-F085 50A, 600V Stealth Diode Mechanical Dimensions TO-247-2L Dimensions in Millimeters www.onsemi.com 5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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