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BC807 / BC808 — PNP Epit axial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC807 / BC808 Rev. 1.1.0 1
November 2014
BC807 / BC808
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low Power Output Stages
• Complement to BC817 / BC818
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Marking Package Packing Method
BC80716MTF 9FA SOT-23 3L Tape and Reel
BC80725MTF 9FB SOT-23 3L Tape and Reel
BC80740MTF 9FC SOT-23 3L Tape and Reel
BC80840MTF 9GC SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage BC807 -50 V
BC808 -30
VCEO Collector-Emitter Voltage BC807 -45 V
BC808 -25
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -800 mA
TJJunction Temperat ure 150 °C
TSTG Storage Temperature -65 to +150 °C
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
BC807 / BC808 — PNP Epit axial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC807 / BC808 Rev. 1.1.0 2
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
hFE Classification
Symbol Parameter Value Unit
PDPower Dissipation 310 mW
Derate Above 2 5°C2.48mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 403 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown
Voltage BC807 IC = -10 mA, IB = 0 -45 V
BC808 -25
BVCES Collector-Emitter Breakdown
Voltage BC807 IC = -0.1 mA, VBE = 0 -50 V
BC808 -30
BVEBO Emitter-Base Br eakdown Voltage IE = -0.1 mA, IC = 0 -5 V
ICES Collector Cut-Off Current VCE = -25 V, VBE = 0 -100 nA
IEBO Emitter Cut-Off Current VEB = -4 V, IC = 0 -100 nA
hFE1 DC Current Gain VCE = -1 V, IC = -100 mA 100 630
hFE2 VCE = -1 V, IC = -300 mA 60
VCE(sat) Collector-Emitter Saturation Voltage IC = -500 mA, IB = -50 mA -0.7 V
VBE(on) Base-Emitter On Voltage VCE = -1 V, IC = -300 mA -1.2 V
fTCurrent Gain Bandwidth Product VCE = -5 V, IC = -10 mA,
f = 50 MHz 100 MHz
Cob Output Capacitance VCB = -10 V, f = 1 MHz 12 pF
Classification 16 25 40
hFE1 100 ~ 250 160 ~ 400 250 ~ 630
hFE2 60 ~ 100 ~ 170 ~
BC807 / BC808 — PNP Epit axial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC807 / BC808 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. Static Characteristic
Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Input Output Capacitance
-0 -1 -2 -3 -4 -5
-0
-100
-200
-300
-400
-500
P
T
= 600mW
IB = - 3.0mA
IB = - 2.0mA
IB = - 3.5mA
IB = - 1.0mA
I
B
= - 1.5mA
IB = - 0.5mA
IB = - 4.0mA
IB = - 2.5mA
IB = - 4.5mA
IB = - 5.0mA
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0 -10 -20 -30 -40 -50
-0
-4
-8
-12
-16
-20
P
T
= 600mW
I
B
= - 80μA
I
B
= - 70μA
I
B
= - 60μA
I
B
= - 50μA
I
B
= - 40μA
I
B
= - 30μA
I
B
= - 20
μ
A
I
B
= - 10μA
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100 -1000
1
10
100
1000 PULSE
- 1.0V
VCE = - 2.0V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100 -1000
-0.01
-0.1
-1
-10
IC = 10 IB
PULSE
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9
-0.1
-1
-10
-100
-1000
VCE = -1V
PULSE
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-0.1 -1 -10 -100
1
10
100
Cib
f = 1.0MHz
Cob
Cib, Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
BC807 / BC808 — PNP Epit axial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC807 / BC808 Rev. 1.1.0 4
Typical Performance Characteristics (Continued)
Figure 7. Current Gain Bandwidth Product
-1 -10 -100
10
100
1000
VCE = -5.0V
fT[MHz], GAIN BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
BC807 / BC808 — PNP Epit axial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC807 / BC808 Rev. 1.1.0 5
Physical Dimensions
Figure 8. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
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