BPV23NF(L)
Vishay Semiconductors
1 (6)
Rev. 3, 16-Nov-99 www.vishay.com
Document Number 81513
Silicon PIN Photodiode
Description
BPV23NF(L) is a high speed and high sensitive PIN
photodiode in a plastic package with a spherical side
view lens.
The epoxy package itself is an IR filter, spectrally
matched to GaAs on GaAs and GaAlAs on GaAlAs IR
emitters (
l
p = 950 nm, srel(
l
= 875 nm) > 90 %).
Lens radius and chip position are perfectly matched to
the chip size, giving high sensitivity without
compromising the viewing angle.
In comparison with flat packages the spherical lens
package achieves a sensitivity improvement of 80%.
Features
D
Large radiant sensitive area (A = 5.7 mm2)
D
Wide viewing angle ϕ = ± 60
°
D
Improved sensitivity
D
Fast response times
D
Low junction capacitance
D
Plastic package with universal IR filter
D
Option ”L”: long lead package optional available
with suffix ”L”; e.g.: BPV23FL
94 8633
Applications
Infrared remote control and free air transmission systems in combination with IR emitter diodes
(TSU.–, TSI.–, or TSH.–Series). High sensitivity detector for high data rate transmission systems.
The IR filter matches perfectly to the high speed infrared emitters in the 830 nm to 880 nm wavelength range.
Absolute Maximum Ratings
Tamb = 25
_
CParameter Test Conditions Symbol Value Unit
Reverse Voltage VR60 V
Power Dissipation Tamb
x
25
°
C PV215 mW
Junction Temperature Tj100
°
C
Operating Temperature Range Tamb –55...+100
°
C
Storage Temperature Range Tstg –55...+100
°
C
Soldering Temperature t
x
5 s Tsd 260
°
C
Thermal Resistance Junction/Ambient RthJA 350 K/W
BPV23NF(L)
Vishay Semiconductors
2 (6) Rev. 3, 16-Nov-99
www.vishay.com Document Number 81513
Basic Characteristics
Tamb = 25
_
C
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 50 mA VF1 1.3 V
Breakdown Voltage IR = 100
m
A, E = 0 V(BR) 60 V
Reverse Dark Current VR = 10 V, E = 0 Iro 2 30 nA
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 CD48 pF
Serial Resistance VR = 12 V, f = 1 MHz RS900
W
Open Circuit Voltage Ee = 1 mW/cm2,
l
= 950 nm Vo390 mV
Temp. Coefficient of VoEe = 1 mW/cm2,
l
= 950 nm TKVo –2.6 mV/K
Short Circuit Current Ee = 1 mW/cm2,
l
= 950 nm Ik65
m
A
Reverse Light Current Ee = 1 mW/cm2,
l
= 870 nm, VR = 5 V Ira 45 65
m
A
Temp. Coefficient of Ira Ee = 1 mW/cm2,
l
= 950 nm, VR = 10 V TKIra 0.1 %/K
Absolute Spectral Sensitivity VR = 5 V,
l
= 870 nm s(
l
) 0.57 A/W
y
VR = 5 V,
l
= 950 nm s(
l
) 0.60 A/W
Angle of Half Sensitivity ϕ±60 deg
Wavelength of Peak Sensitivity
l
p940 nm
Range of Spectral Bandwidth
l
0.5 790...1050 nm
Quantum Efficiency
l
= 950 nm
h
90 %
Noise Equivalent Power VR = 10 V,
l
= 950 nm NEP 4x10–14 W/√ Hz
Detectivity VR = 10 V,
l
= 950 nm D*5x1012 cm√Hz/
W
Rise Time VR = 10 V, RL = 1k
W
,
l
= 820 nm tr70 ns
Fall Time VR = 10 V, RL = 1k
W
,
l
= 820 nm tf70 ns
Cut–Off Frequency VR = 12 V, RL = 1k
W
,
l
= 870 nm fc4 MHz
VR = 12 V, RL = 1k
W
,
l
= 950 nm fc1 MHz
BPV23NF(L)
Vishay Semiconductors
3 (6)
Rev. 3, 16-Nov-99 www.vishay.com
Document Number 81513
Typical Characteristics (Tamb = 25
_
C unless otherwise specified)
20 40 60 80
1
10
100
1000
I – Reverse Dark Current ( nA )
ro
Tamb – Ambient Temperature ( °C )
100
94 8403
VR=10V
Figure 1. Reverse Dark Current vs. Ambient Temperature
020406080
0.6
0.8
1.0
1.2
1.4
I – Relative Reverse Light Current
ra rel
Tamb – Ambient Temperature ( °C )
100
94 8409
VR=5V
l
=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
0.01 0.1 1
0.1
1
10
100
1000
I – Reverse Light Current ( A )
ra
Ee – Irradiance ( mW/cm2 )
10
94 8424
m
VR=5V
l
=950nm
Figure 3. Reverse Light Current vs. Irradiance
0.1 1 10
1
10
100
VR – Reverse Voltage ( V )
100
94 8425
I – Reverse Light Current ( A )
ra
m
1mW/cm2
0.5mW/cm2
0.2mW/cm2
0.1mW/cm2
0.05mW/cm2
0.02mW/cm2
l
=950nm
Figure 4. Reverse Light Current vs. Reverse Voltage
0.1 1 10
0
20
40
60
80
C – Diode Capacitance ( pF )
D
VR – Reverse Voltage ( V )
100
94 8423
E=0
f=1MHz
Figure 5. Diode Capacitance vs. Reverse Voltage
750 850 950 1050
0
0.2
0.4
0.6
0.8
1.2
S ( ) – Relative Spectral Sensitivity
rel
l
– Wavelength ( nm )
1150
94 8426
1.0
l
Figure 6. Relative Spectral Sensitivity vs. Wavelength
BPV23NF(L)
Vishay Semiconductors
4 (6) Rev. 3, 16-Nov-99
www.vishay.com Document Number 81513
0.4 0.2 0 0.2 0.4
S – Relative Sensitivity
rel
0.6
94 8413
0.6
0.9
0.8
0°30°
10
°20
°
40°
50°
60°
70°
80°
0.7
1.0
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
Dimensions BPV23NF in mm
95 11475
BPV23NF(L)
Vishay Semiconductors
5 (6)
Rev. 3, 16-Nov-99 www.vishay.com
Document Number 81513
Dimensions BPV23NFL in mm
9612205
BPV23NF(L)
Vishay Semiconductors
6 (6) Rev. 3, 16-Nov-99
www.vishay.com Document Number 81513
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
