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LM2767
SNVS069D –FEBRUARY 2000–REVISED AUGUST 2015
LM2767 Switched Capacitor Voltage Converter
1 Features 3 Description
The LM2767 CMOS charge-pump voltage converter
1• Doubles Input Supply Voltage operates as a voltage doubler for an input voltage in
• SOT-23 5-Pin Package the range of 1.8 V to 5.5 V. Two low-cost capacitors
• 20-ΩTypical Output Impedance and a diode are used in this circuit to provide at least
15 mA of output current.
• 96% Typical Conversion Efficiency at 15 mA The LM2767 operates at 11-kHz switching frequency
2 Applications to avoid audio voice-band interference. With an
operating current of only 40 µA (operating efficiency
• Cellular Phones greater than 90% with most loads), the LM2767
• Pagers provides ideal performance for battery-powered
• PDAs, Organizers systems. The device is manufactured in a 5-pin
SOT-23 package.
• Operational Amplifier Power Suppliers
• Interface Power Suppliers Device Information(1)
• Handheld Instruments PART NUMBER PACKAGE BODY SIZE (NOM)
LM2767 SOT-23 (5) 2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
space
space
space
space
Typical Application
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM2767
SNVS069D –FEBRUARY 2000–REVISED AUGUST 2015
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Table of Contents
8.3 Feature Description................................................... 8
1 Features.................................................................. 18.4 Device Functional Modes.......................................... 8
2 Applications ........................................................... 19 Application and Implementation .......................... 9
3 Description............................................................. 19.1 Application Information.............................................. 9
4 Revision History..................................................... 29.2 Typical Application ................................................... 9
5 Pin Configuration and Functions......................... 310 Power Supply Recommendations ..................... 13
6 Specifications......................................................... 411 Layout................................................................... 13
6.1 Absolute Maximum Ratings ...................................... 411.1 Layout Guidelines ................................................. 13
6.2 ESD Ratings.............................................................. 411.2 Layout Example .................................................... 13
6.3 Recommended Operating Conditions....................... 412 Device and Documentation Support................. 14
6.4 Thermal Information.................................................. 412.1 Device Support...................................................... 14
6.5 Electrical Characteristics........................................... 512.2 Community Resources.......................................... 14
6.6 Typical Characteristics ............................................. 612.3 Trademarks........................................................... 14
7 Parameter Measurement Information .................. 712.4 Electrostatic Discharge Caution............................ 14
7.1 Test Circuit................................................................ 712.5 Glossary................................................................ 14
8 Detailed Description.............................................. 813 Mechanical, Packaging, and Orderable
8.1 Overview................................................................... 8Information........................................................... 14
8.2 Functional Block Diagram......................................... 8
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (May 2013) to Revision D Page
• Added Device Information and Pin Configuration and Functions sections, ESD Rating table, Feature Description,
Device Functional Modes,Application and Implementation,Power Supply Recommendations,Layout,Device and
Documentation Support, and Mechanical, Packaging, and Orderable Information sections................................................. 1
Changes from Revision B (May 2013) to Revision C Page
• Changed layout of National Data Sheet to TI format ........................................................................................................... 12
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5 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
Top View
Pin Functions
PIN TYPE DESCRIPTION
NUMBER NAME
1 VOUT Power Positive voltage output.
2 GND Ground Power supply ground input.
3 CAP−Power Connect this pin to the negative terminal of the charge-pump capacitor.
4 V+ Power Power supply positive voltage input.
5 CAP+ Power Connect this pin to the positive terminal of the charge-pump capacitor.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Supply voltage (V+ to GND, or V+ to VOUT) 5.8 V
VOUT continuous output current 30 mA
Output short-circuit duration to GND(3) 1 sec
Continuous power dissipation (TA= 25°C)(4) 400 mW
TJMax(4) 150 °C
Storage temperature, Tstg −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, contact the TI Sales Office/ Distributors for availability and specifications.
(3) VOUT may be shorted to GND for one second without damage. For temperatures above 85°C, VOUT must not be shorted to GND or
device may be damaged.
(4) The maximum allowable power dissipation is calculated by using PDMax = (TJMax −TA)/RθJA, where TJMax is the maximum junction
temperature, TAis the ambient temperature, and RθJA is the junction-to-ambient thermal resistance of the specified package.
6.2 ESD Ratings VALUE UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000
Electrostatic
V(ESD) V
discharge Machine model (CDM), per JEDEC specification JESD22-C101(2) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT
Junction temperature −40 100 °C
Ambient temperature −40 85 °C
Lead temperature (soldering, 10 sec.) 240 °C
6.4 Thermal Information LM2767
THERMAL METRIC(1) DBV (SOT-23) UNIT
5 PINS
RθJA Junction-to-ambient thermal resistance 210 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics
Unless otherwise specified, typical limits are for TJ= 25°C, minimum and maximum limits apply over the full operating
temperature range: V+ = 5 V, C1= C2= 10 μF.(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V+ Supply voltage 1.8 5.5 V
IQSupply current No load 40 90 µA
ILOutput current 1.8 V ≤V+ ≤5.5 V 15 mA
ROUT Output resistance(2) IL= 15 mA 20 40 Ω
ƒOSC Oscillator frequency See(3) 8 22 50 kHz
ƒSW Switching frequency See(3) 4 11 25 kHz
RL(5 kΩ) between GND and OUT 98%
PEFF Power efficiency IL= 15 mA to GND 96%
VOEFF Voltage conversion efficiency No load 99.96%
(1) In the test circuit, capacitors C1and C2are 10-µF, 0.3-Ωmaximum ESR capacitors. Capacitors with higher ESR may increase output
resistance, and reduce output voltage and efficiency.
(2) Specified output resistance includes internal switch resistance and capacitor ESR. See the details in Application and Implementation for
positive voltage doubler.
(3) The output switches operate at one half of the oscillator frequency, ƒOSC = 2 × ƒSW.
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6.6 Typical Characteristics
(Circuit of Figure 9, VIN = 5 V, TA= 25°C unless otherwise specified).
Figure 1. Supply Current vs Supply Voltage Figure 2. Output Resistance vs Capacitance
Figure 4. Output Resistance vs Temperature
Figure 3. Output Resistance vs Supply Voltage
Figure 5. Output Voltage vs Load Current Figure 6. Switching Frequency vs Supply Voltage
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Typical Characteristics (continued)
(Circuit of Figure 9, VIN = 5 V, TA= 25°C unless otherwise specified).
Figure 7. Switching Frequency vs Temperature Figure 8. Output Ripple vs Load Current
7 Parameter Measurement Information
7.1 Test Circuit
Figure 9. LM2767 Test Circuit
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V+
CAP+
OUT
GND
Oscillator Switch Array
Switch
Drivers CAP-
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SNVS069D –FEBRUARY 2000–REVISED AUGUST 2015
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8 Detailed Description
8.1 Overview
The LM2767 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the
range of 1.8 V to 5.5 V. Two low-cost capacitors and a diode (needed during start-up) are used in this circuit.
8.2 Functional Block Diagram
8.3 Feature Description
The LM2767 contains four large CMOS switches which are switched in a sequence to double the input supply
voltage. Energy transfer and storage are provided by external capacitors. Figure 11 illustrates the voltage
conversion scheme. When S2and S4are closed, C1charges to the supply voltage V+. During this time interval,
switches S1and S3are open. In the next time interval, S2and S4are open; at the same time, S1and S3are
closed, the sum of the input voltage V+ and the voltage across C1gives the 2V+ output voltage when there is no
load. The output voltage drop when a load is added is determined by the parasitic resistance (Rds(on) of the
MOSFET switches and the ESR of the capacitors) and the charge transfer loss between capacitors. Details are
discussed in Application and Implementation.
8.4 Device Functional Modes
The LM2767 is always enabled when power is applied to the V+ pin (1.8 V ≤VIN ≤5.5 V). To disable the part,
power must be removed.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The LM2767 provides a simple and efficient means of creating an output voltage level equal to twice that of the
input voltage. Without the need of an inductor, the application solution size can be reduced versus the magnetic
DC-DC converter solution.
9.2 Typical Application
The main application of the LM2767 is to double the input voltage. The range of the input supply voltage is 1.8 V
to 5.5 V.
Figure 10. LM2767 Typical Application
9.2.1 Design Requirements
For typical switched-capacitor voltage converter applications, use the parameters listed in Table 1.
Table 1. Design Parameters
DESIGN PARAMETER EXAMPLE VALUE
Minimum input voltage 1.8 to 5.5 V
Output current (minimum) 15 mA
Switching frequency 11 kHz (typical)
9.2.2 Detailed Design Procedure
9.2.2.1 Positive Voltage Doubler
Figure 11. Voltage Doubling Principle
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D=P
OUT
P
IN
=IL2RL
IL2RL+ IL2ROUT + IQ(V+)
V
RIPPLE =
IL
&OSC × C2
+ 2 × IL× ESRC2
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SNVS069D –FEBRUARY 2000–REVISED AUGUST 2015
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The output characteristics of this circuit can be approximated by an ideal voltage source in series with a
resistance. The voltage source equals 2 V+. The output resistance Rout is a function of the ON resistance of the
internal MOSFET switches, the oscillator frequency, and the capacitance and ESR of C1and C2. Because the
switching current charging and discharging C1is approximately twice the output current, the effect of the ESR of
the pumping capacitor C1is multiplied by four in the output resistance. The output capacitor C2is charging and
discharging at a current approximately equal to the output current, therefore, its ESR only counts once in the
output resistance. A good approximation of Rout is:
where
• RSW is the sum of the ON resistance of the internal MOSFET switches shown in Figure 11. (1)
The peak-to-peak output voltage ripple is determined by the oscillator frequency as well as the capacitance and
ESR of the output capacitor C2:
(2)
High capacitance, low ESR capacitors can reduce both the output resistance and the voltage ripple.
The Schottky diode D1is only needed to protect the device from turning on its own parasitic diode and potentially
latching up. During start-up, D1also quickly charges up the output capacitor to VIN minus the diode drop thereby
decreasing the start-up time. Therefore, the Schottky diode D1must have enough current carrying capability to
charge the output capacitor at start-up, as well as a low forward voltage to prevent the internal parasitic diode
from turning on. A Schottky diode like 1N5817 can be used for most applications. If the input voltage ramp is less
than 10 V/ms, a smaller Schottky diode like MBR0520LT1 can be used to reduce the circuit size.
9.2.2.2 Capacitor Selection
As discussed in Positive Voltage Doubler, the output resistance and ripple voltage are dependent on the
capacitance and ESR values of the external capacitors. The output voltage drop is the load current times the
output resistance, and the power efficiency is
where
• IQ(V+) is the quiescent power loss of the device; and
• IL2Rout is the conversion loss associated with the switch on-resistance, the two external capacitors and their
ESRs. (3)
The selection of capacitors is based on the allowable voltage droop (which equals Iout Rout), and the desired
output voltage ripple. Low-ESR capacitors (Table 2) are recommended to maximize efficiency, reduce the output
voltage drop and voltage ripple.
Table 2. Low-ESR Capacitor Manufacturers
MANUFACTURER PHONE WEBSITE CAPACITOR TYPE
Nichicon Corp. (847)-843-7500 www.nichicon.com PL & PF series, through-hole aluminum electrolytic
AVX Corp. (843)-448-9411 www.avxcorp.com TPS series, surface-mount tantalum
Sprague (207)-324-4140 www.vishay.com 593D, 594D, 595D series, surface-mount tantalum
Sanyo (619)-661-6835 www.sanyovideo.com OS-CON series, through-hole aluminum electrolytic
Murata (800)-831-9172 www.murata.com Ceramic chip capacitors
Taiyo Yuden (800)-348-2496 www.t-yuden.com Ceramic chip capacitors
Tokin (408)-432-8020 www.tokin.com Ceramic chip capacitors
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ROUT = ROUT of each LM 2767
Number of Devices
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9.2.2.3 Paralleling Devices
Any number of LM2767 devices can be paralleled to reduce the output resistance. Because there is no closed
loop feedback, as found in regulated circuits, stable operation is assured. Each device must have its own
pumping capacitor C1, while only one output capacitor COUT is needed as shown in Figure 12. The composite
output resistance is:
(4)
Figure 12. Lowering Output Resistance by Paralleling Devices
9.2.2.4 Cascading Devices
Cascading the several LM2767 devices is an easy way to produce a greater voltage (a two-stage cascade circuit
is shown in Figure 13).
The effective output resistance is equal to the weighted sum of each individual device:
ROUT = 1.5 ROUT_1 + ROUT_2 (5)
Note that increasing the number of cascading stages is practically limited because it significantly reduces the
efficiency, increases the output resistance and output voltage ripple.
Figure 13. Increasing Output Voltage By Cascading Devices
9.2.2.5 Regulating VOUT
It is possible to regulate the output of the LM2767 by use of a low dropout regulator (such as LP2980-5.0). The
whole converter is depicted in Figure 14.
A different output voltage is possible by use of LP2980-3.3, LP2980-3.0, or LP2980-ADJ.
The following conditions must be satisfied simultaneously for worst case design:
2VIN_MIN > VOUT_MIN + VDROP_MAX (LP2980) + IOUT_MAX × ROUT_MAX (6)
2VIN_MAX < VOUT_MAX + VDROP_MIN (LP2980) + IOUT_MIN × ROUT_MIN (7)
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Figure 14. Generate a Regulated 5-V From 3-V Input Voltage
9.2.3 Application Curve
Figure 15. Efficiency vs Load Current
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VOUT
GND
LM2767
CAP-
CAP+
V+
LM2767
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10 Power Supply Recommendations
The LM2767 is designed to operate from as an inverter over an input voltage supply range from 1.8 V and 5.5 V.
This input supply must be well-regulated and capable to supply the required input current. If the input supply is
located far from the device, additional bulk capacitance may be required in addition to the ceramic bypass
capacitors.
11 Layout
11.1 Layout Guidelines
Use the following steps as a reference to ensure the device is stable across its intended operating voltage and
current range.
• Place CIN on the top layer (same layer as the LM2767) and as close to the device as possible. Connecting
the input capacitor through short, wide traces to both the V+ and GND pins reduces the inductive voltage
spikes that occur during switching which can corrupt the V+ line.
• Place COUT on the top layer (same layer as the LM2767) and as close as possible to the OUT and GND pin.
The returns for both CIN and COUT must come together at one point, as close to the GND pin as possible.
Connecting COUT through short, wide traces reduce the series inductance on the OUT and GND pins that
can corrupt the VOUT and GND lines and cause excessive noise in the device and surrounding circuitry.
• Place C1 on the top layer (same layer as the LM2767 device) and as close to the device as possible.
Connect the flying capacitor through short, wide traces to both the CAP+ and CAP– pins.
11.2 Layout Example
Figure 16. LM2767 Layout Example
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12 Device and Documentation Support
12.1 Device Support
12.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 —TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM2767M5 NRND SOT-23 DBV 5 1000 Non-RoHS &
Non-Green Call TI Call TI -40 to 85 S17B
LM2767M5/NOPB ACTIVE SOT-23 DBV 5 1000 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 S17B
LM2767M5X/NOPB ACTIVE SOT-23 DBV 5 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 S17B
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
PACKAGE OPTION ADDENDUM
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Addendum-Page 2
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LM2767M5 SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
LM2767M5/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
LM2767M5X/NOPB SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
PACKAGE MATERIALS INFORMATION
www.ti.com 29-Sep-2019
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM2767M5 SOT-23 DBV 5 1000 210.0 185.0 35.0
LM2767M5/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0
LM2767M5X/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0
PACKAGE MATERIALS INFORMATION
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Pack Materials-Page 2
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PACKAGE OUTLINE
C
0.22
0.08 TYP
0.25
3.0
2.6
2X 0.95
1.9
1.45
0.90
0.15
0.00 TYP
5X 0.5
0.3
0.6
0.3 TYP
8
0 TYP
1.9
A
3.05
2.75
B
1.75
1.45
(1.1)
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
4214839/E 09/2019
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Refernce JEDEC MO-178.
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
0.2 C A B
1
34
5
2
INDEX AREA
PIN 1
GAGE PLANE
SEATING PLANE
0.1 C
SCALE 4.000
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EXAMPLE BOARD LAYOUT
0.07 MAX
ARROUND 0.07 MIN
ARROUND
5X (1.1)
5X (0.6)
(2.6)
(1.9)
2X (0.95)
(R0.05) TYP
4214839/E 09/2019
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:15X
PKG
1
34
5
2
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED METAL
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
EXPOSED METAL
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EXAMPLE STENCIL DESIGN
(2.6)
(1.9)
2X(0.95)
5X (1.1)
5X (0.6)
(R0.05) TYP
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
4214839/E 09/2019
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:15X
SYMM
PKG
1
34
5
2
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TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
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