VS-MURB1020CTPbF, VS-MURB1020CT-1PbF Vishay High Power Products Ultrafast Rectifier, 2 x 5 A FRED Pt(R) FEATURES VS-MURB1020CTPbF VS-MURB1020CT-1PbF Base common cathode 2 Base common cathode 2 1 2 Anode Common 1 cathode 3 Anode 2 1 2 Anode Common 1 cathode D2PAK * * * * * Ultrafast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Halogen-free according to IEC 61249-2-21 definition * Compliant to RoHS directive 2002/95/EC * AEC-Q101 qualified 3 DESCRIPTION/APPLICATIONS Anode 2 MUR.. series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, dc-to-dc converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. TO-262 PRODUCT SUMMARY trr 25 ns IF(AV) 2x5A VR 200 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage Average rectified forward current TEST CONDITIONS MAX. UNITS 200 V VRRM per leg total device Non-repetitive peak surge current per leg IF(AV) 5 Rated VR, TC = 149 C 10 IFSM Peak repetitive forward current per leg IFM Operating junction and storage temperatures A 50 Rated VR, square wave, 20 kHz, TC = 149 C TJ, TStg 10 - 65 to 175 C ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 5 A, TJ = 125 C - 0.87 0.99 IF = 10 A, TJ = 125 C - 1.02 1.20 IF = 10 A, TJ = 25 C - 1.12 1.25 IR = 100 A VR = VR rated - - 10 TJ = 150 C, VR = VR rated - - 250 UNITS V A Reverse leakage current IR Junction capacitance CT VR = 200 V - 8 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH Document Number: 94518 Revision: 11-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 1 VS-MURB1020CTPbF, VS-MURB1020CT-1PbF Vishay High Power Products Ultrafast Rectifier, 2 x 5 A FRED Pt(R) DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - - 35 IF = 1.0 A, dIF/dt = 50 A/s, VR = 30 V UNITS IF = 0.5 A, IR = 1.0 A, IREC = 0.25 V - - 25 TJ = 25 C - 24 - - 35 - - 3.3 - - 5.0 - TJ = 25 C - 33 - TJ = 125 C - 76 - MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 C Thermal resistance, junction to case per leg RthJC - - 5 Thermal resistance, junction to ambient per leg RthJA - - 50 Thermal resistance, case to heatsink RthCS - 0.5 - - 2.0 - - 0.07 - oz. - 12 (10) kgf * cm (lbf * in) Reverse recovery time trr TJ = 125 C Peak recovery current Reverse recovery charge IRRM Qrr TJ = 25 C TJ = 125 C IF = 5 A dIF/dt = 200 A/s VR = 160 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Mounting surface, flat, smooth and greased Weight 6.0 (5.0) Mounting torque Marking device www.vishay.com 2 Case style D2PAK MURB1020CT Case style TO-262 MURB1020CT-1 For technical questions, contact: diodestech@vishay.com C/W g Document Number: 94518 Revision: 11-Mar-10 VS-MURB1020CTPbF, VS-MURB1020CT-1PbF Vishay High Power Products 100 100 TJ = 175 C 10 IR - Reverse Current (A) IF - Instantaneous Forward Current (A) Ultrafast Rectifier, 2 x 5 A FRED Pt(R) 10 TJ = 175 C TJ = 125 C TJ = 25 C 1 TJ = 150 C 1 TJ = 125 C TJ = 100 C 0.1 0.01 0.001 TJ = 25 C 0.0001 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 VF - Forward Voltage Drop (V) 94518_01 40 120 160 200 VR - Reverse Voltage (V) 94518_02 Fig. 1 - Typical Forward Voltage Drop Characteristics 80 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 C 10 1 1 94518_03 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 0.01 0.00001 94518_04 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single pulse (thermal resistance) 0.0001 0.001 PDM t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94518 Revision: 11-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 VS-MURB1020CTPbF, VS-MURB1020CT-1PbF Ultrafast Rectifier, 2 x 5 A FRED Pt(R) 180 50 IF = 10 A IF = 5 A 170 40 DC 160 trr (ns) Allowable Case Temperature (C) Vishay High Power Products 150 30 Square wave (D = 0.50) Rated VR applied 140 20 VR = 160 V TJ = 125 C TJ = 25 C See note (1) 130 0 2 4 6 IF(AV) - Average Forward Current (A) 94518_05 10 100 8 Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 7 160 6 140 120 5 RMS limit Qrr (nC) Average Power Loss (W) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 4 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 3 2 1 94518_06 1 2 3 4 5 6 IF = 10 A IF = 5 A 100 80 60 40 VR = 160 V TJ = 125 C TJ = 25 C 20 0 0 1000 dIF/dt (A/s) 94518_07 7 0 100 8 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 1000 dIF/dt (A/s) 94518_08 Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions, contact: diodestech@vishay.com Document Number: 94518 Revision: 11-Mar-10 VS-MURB1020CTPbF, VS-MURB1020CT-1PbF Ultrafast Rectifier, 2 x 5 A FRED Pt(R) Vishay High Power Products VR = 200 V 0.01 L = 70 H D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94518 Revision: 11-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 VS-MURB1020CTPbF, VS-MURB1020CT-1PbF Ultrafast Rectifier, 2 x 5 A FRED Pt(R) Vishay High Power Products ORDERING INFORMATION TABLE Device code VS- MUR 2 1 B 10 20 CT -1 TRL P 3 4 5 6 7 8 9 1 - HPP product suffix 2 - Ultrafast MUR series 3 - B = D2PAK/TO-262 4 - Current rating (10 = 10 A) 5 - Voltage rating (20 = 200 V) 6 - CT = Center tap (dual) 7 - None = D2PAK -1 = TO-262 8 - None = Tube (50 pieces) TRL = Tape and reel (left oriented, for D2PAK package) TRR = Tape and reel (right oriented, for D2PAK package) 9 - PbF = Lead (Pb)-free (for TO-262 and D2PAK tube) P = Lead (Pb)-free (for D2PAK TRR and TRL) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95014 Part marking information www.vishay.com/doc?95008 Packaging information www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodestech@vishay.com Document Number: 94518 Revision: 11-Mar-10 Outline Dimensions Vishay High Power Products D2PAK, TO-262 DIMENSIONS FOR D2PAK in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb 0.004 M B 0.010 M A M B Plating 2x e Base Metal (4) b1, b3 H Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0 to 8 MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch Document Number: 95014 Revision: 31-Mar-09 e (7) 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Outline conforms to JEDEC outline TO-263AB For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Outline Dimensions D2PAK, TO-262 Vishay High Power Products DIMENSIONS FOR TO-262 in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 NOTES 4 4 4 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e 2.54 BSC 0.100 BSC L 13.46 14.10 0.530 0.555 L1 - 1.65 - 0.065 L2 3.56 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches www.vishay.com 2 2 (6) 3 Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com Document Number: 95014 Revision: 31-Mar-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000