Document Number: 94518 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 11-Mar-10 1
Ultrafast Rectifier, 2 x 5 A FRED Pt®
VS-MURB1020CTPbF, VS-MURB1020CT-1PbF
Vishay High Power Products
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION/APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
trr 25 ns
IF(AV) 2 x 5 A
VR200 V
VS-MURB1020CTPbF
D
2
PAK TO-262
VS-MURB1020CT-1PbF
Base
common
cathode
Common
cathode
A
node
1
Anode
2
2
12 3
Base
common
cathode
Common
cathode
Anode
1
Anode
2
2
12 3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage VRRM 200 V
Average rectified forward current per leg IF(AV)
5
A
total device Rated VR, TC = 149 °C 10
Non-repetitive peak surge current per leg IFSM 50
Peak repetitive forward current per leg IFM Rated VR, square wave, 20 kHz, TC = 149 °C 10
Operating junction and storage temperatures TJ, TStg - 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA 200 - -
V
Forward voltage VF
IF = 5 A, TJ = 125 °C - 0.87 0.99
IF = 10 A, TJ = 125 °C - 1.02 1.20
IF = 10 A, TJ = 25 °C - 1.12 1.25
Reverse leakage current IR
VR = VR rated - - 10 μA
TJ = 150 °C, VR = VR rated - - 250
Junction capacitance CTVR = 200 V - 8 - pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8.0 - nH
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94518
2Revision: 11-Mar-10
VS-MURB1020CTPbF, VS-MURB1020CT-1PbF
Vishay High Power Products Ultrafast Rectifier,
2 x 5 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
ns
IF = 0.5 A, IR = 1.0 A, IREC = 0.25 V - - 25
TJ = 25 °C
IF = 5 A
dIF/dt = 200 A/μs
VR = 160 V
-24-
TJ = 125 °C - 35 -
Peak recovery current IRRM
TJ = 25 °C - 3.3 - A
TJ = 125 °C - 5.0 -
Reverse recovery charge Qrr
TJ = 25 °C - 33 - nC
TJ = 125 °C - 76 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range TJ, TStg - 65 - 175 °C
Thermal resistance,
junction to case per leg RthJC --5
°C/W
Thermal resistance,
junction to ambient per leg RthJA --50
Thermal resistance,
case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 -
Weight -2.0- g
-0.07- oz.
Mounting torque 6.0
(5.0) -12
(10)
kgf · cm
(lbf · in)
Marking device Case style D2PAK MURB1020CT
Case style TO-262 MURB1020CT-1
Document Number: 94518 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 11-Mar-10 3
VS-MURB1020CTPbF, VS-MURB1020CT-1PbF
Ultrafast Rectifier,
2 x 5 A FRED Pt®
Vishay High Power Products
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
IF - Instantaneous Forward Current (A)
VF - Forward Voltage Drop (V)
0.2 0.4 0.8 1.20.6 1.0 1.4 1.6
0.1
1
100
10
94518_01
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
0 40 80 120 160 200
0.0001
0.001
0.01
0.1
1
10
100
94518_02
TJ = 125 °C
TJ = 175 °C
TJ = 150 °C
TJ = 100 °C
TJ = 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
1 10 100 1000
1
100
10
94518_03
TJ = 25 °C
0.01
0.1
1
10
0.00001
94518_04
0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
PDM
t2
t1
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94518
4Revision: 11-Mar-10
VS-MURB1020CTPbF, VS-MURB1020CT-1PbF
Vishay High Power Products Ultrafast Rectifier,
2 x 5 A FRED Pt®
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
642 8
0
170
180
130
150
160
140
94518_05
Square wave (D = 0.50)
Rated VR applied
See note (1)
DC
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
4657321 8
0
94518_06
6
7
0
2
4
3
5
1
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
RMS limit
t
rr
(ns)
dI
F
/dt (A/μs)
100 1000
10
50
20
40
30
94518_07
VR = 160 V
TJ = 125 °C
TJ = 25 °C
IF = 10 A
IF = 5 A
Q
rr
(nC)
dI
F
/dt (A/μs)
100 1000
0
160
120
40
20
60
80
140
100
94518_08
IF = 10 A
IF = 5 A
VR = 160 V
TJ = 125 °C
TJ = 25 °C
Document Number: 94518 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 11-Mar-10 5
VS-MURB1020CTPbF, VS-MURB1020CT-1PbF
Ultrafast Rectifier,
2 x 5 A FRED Pt®
Vishay High Power Products
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94518
6Revision: 11-Mar-10
VS-MURB1020CTPbF, VS-MURB1020CT-1PbF
Vishay High Power Products Ultrafast Rectifier,
2 x 5 A FRED Pt®
ORDERING INFORMATION TABLE
2- Ultrafast MUR series
3- B = D2PAK/TO-262
4- Current rating (10 = 10 A)
5- Voltage rating (20 = 200 V)
6- CT = Center tap (dual)
7- None = D2PAK
-1 = TO-262
9- PbF = Lead (Pb)-free (for TO-262 and D2PAK tube)
P = Lead (Pb)-free (for D2PAK TRR and TRL)
8- None = Tube (50 pieces)
TRL = Tape and reel (left oriented, for D2PAK package)
TRR = Tape and reel (right oriented, for D2PAK package)
Device code
51 324
6789
VS- MUR B 10 20 CT -1 TRL P
1- HPP product suffix
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95014
Part marking information www.vishay.com/doc?95008
Packaging information www.vishay.com/doc?95032
Document Number: 95014 For technical questions concerning discrete products, contact: diodes-tech@vishay.com www.vishay.com
Revision: 31-Mar-09 For technical questions concerning module products, contact: ind-modules@vishay.com 1
D2PAK, TO-262
Outline Dimensions
Vishay High Power Products
DIMENSIONS FOR D2PAK in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not
exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC outline D2PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
www.vishay.com For technical questions concerning discrete products, contact: diodes-tech@vishay.com Document Number: 95014
2 For technical questions concerning module products, contact: ind-modules@vishay.com Revision: 31-Mar-09
Outline Dimensions
Vishay High Power Products D2PAK, TO-262
DIMENSIONS FOR TO-262 in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not
exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190
A1 2.03 3.02 0.080 0.119
b 0.51 0.99 0.020 0.039
b1 0.51 0.89 0.020 0.035 4
b2 1.14 1.78 0.045 0.070
b3 1.14 1.73 0.045 0.068 4
c 0.38 0.74 0.015 0.029
c1 0.38 0.58 0.015 0.023 4
c2 1.14 1.65 0.045 0.065
D 8.51 9.65 0.335 0.380 2
D1 6.86 8.00 0.270 0.315 3
E 9.65 10.67 0.380 0.420 2, 3
E1 7.90 8.80 0.311 0.346 3
e 2.54 BSC 0.100 BSC
L 13.46 14.10 0.530 0.555
L1 - 1.65 - 0.065 3
L2 3.56 3.71 0.140 0.146
(4)
(4) Base
metal
Plating b1, b3
(b, b2)
c1
c
Section B - B and C - C
Scale: None
Section A - A
(3)
E1
(3)D1
E
B
A
A
A
c2
c
A1
Seating
plane
Lead tip
(3)
(2) (3)
(2)
A
E
(Datum A)
L1
L2
BB
CC
3
2
1
L
D
2 x e
3 x b2
3 x b
0.010 A B
MM
Modified JEDEC outline TO-262
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
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Revision: 02-Oct-12 1Document Number: 91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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