DATA SH EET
Product specification
Supersedes data of September 1995
File under discrete semiconductors, SC14
1997 Oct 29
DISCRETE SEMICONDUCTORS
BFR93A
NPN 6 GHz wideband transistor
1997 Oct 29 2
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFR93A
FEATURES
High power gain
Low noise figure
Very low intermodulation distortion.
APPLICATIONS
RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector Fig.1 SOT23.
page
MSB003
Top view
12
3
Marking code: R2p.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter 15 V
VCEO collector-emitter voltage open base 12 V
ICcollector current (DC) 35 mA
Ptot total power dissipation Ts95 °C300 mW
Cre feedback capacitance IC= 0; VCE = 5 V; f = 1 MHz 0.6 pF
fTtransition frequency IC= 30 mA; VCE = 5 V; f = 500 MHz 6 GHz
GUM maximum unilateral power gain IC= 30 mA; VCE = 8 V ; f = 1 GHz; Tamb =25°C13 dB
IC= 30 mA; VCE = 8 V ; f = 2 GHz; Tamb =25°C7 dB
F noise figure IC= 5 mA; VCE = 8 V; f = 1 GHz; Γs=Γopt;
Tamb =25°C1.9 dB
VOoutput voltage dim =60 dB; IC= 30 mA; VCE =8V;
R
L=75; Tamb =25°C;
fp+f
qf
r= 793.25 MHz
425 mV
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 15 V
VCEO collector-emitter voltage open base 12 V
VEBO emitter-base voltage open collector 2V
I
Ccollector current (DC) 35 mA
Ptot total power dissipation Ts95 °C; note 1 300 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature +175 °C
1997 Oct 29 3
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFR93A
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and .
2. Measured on the same die in a SOT37 package (BFR91A).
3. dim =60 dB (DIN 45004B); IC= 30 mA; VCE = 8 V; RL=75; Tamb =25°C;
Vp=V
Oat dim =60 dB; fp= 795.25 MHz;
Vq=V
O6 dB at fq= 803.25 MHz;
Vr=V
O6 dB at fr= 805.25 MHz;
measured at fp+f
qf
r= 793.25 MHz.
4. IC= 30 mA; VCE = 8 V; RL=75; Tamb =25°C;
Vp= 200 mV at fp= 250 MHz;
Vq= 200 mV at fq= 560 MHz;
measured at fp+f
q= 810 MHz.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point Ts95 °C; note 1 260 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =5V −−50 nA
hFE DC current gain IC= 30 mA; VCE = 5 V 40 90
Cccollector capacitance IE=i
e= 0; VCB =5V; f=1MHz 0.7 pF
Ceemitter capacitance IC=i
c= 0; VEB = 0.5 V; f = 1 MHz 1.9 pF
Cre feedback capacitance IC=i
c= 0; VCE = 5 V; f = 1 MHz;
Tamb =25°C0.6 pF
fTtransition frequency IC= 30 mA; VCE = 5 V; f = 500 MHz 4.5 6 GHz
GUM maximum unilateral power gain
(note 1) IC= 30 mA; VCE = 8 V; f = 1 GHz;
Tamb =25°C13 dB
IC= 30 mA; VCE = 8 V; f = 2 GHz;
Tamb =25°C7dB
F noise figure (note 2) IC= 5 mA; VCE = 8 V; f = 1 GHz;
Γs=Γopt; Tamb =25°C1.9 dB
IC= 5 mA; VCE = 8 V; f = 2 GHz;
Γs=Γopt; Tamb =25°C3dB
VOoutput voltage notes 2 and 3 425 mV
d2second order intermodulation
distortion notes 2 and 4 −−50 dB
GUM 10 log
S
21 2
1
S
11 2


1
S
22 2


-------------------------------------------------------------- dB=
1997 Oct 29 4
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFR93A
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
L1=L3=5µH choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
handbook, full pagewidth
MBB251
18
1.5 nF
10 kL2
L1
1 nF
75
input
270
1 nF
L3
1.5 nF
1 nF
0.68 pF
3.3 pF
DUT
75
output
VCC
VBB
Fig.3 Power derating curve.
handbook, halfpage
0 50 100 200
400
300
100
0
200
MBG246
150
Ptot
(mW)
Ts(oC)
Fig.4 DC current gain as a function of
collector current.
VCE = 5 V; Tj=25°C.
handbook, halfpage
0102030
120
0
40
80
MCD087
hFE
I (mA)
C
1997 Oct 29 5
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFR93A
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values.
IE=i
e= 0; f = 1 MHz; Tj=25°C.
handbook, halfpage
048 16
1
0
0.8
MBB252
12
0.6
0.4
0.2
Cc
(pF)
VCB (V)
Fig.6 Transition frequency as a function of
collector current; typical values.
VCE = 5 V; f = 500 MHz; Tj=25°C.
handbook, halfpage
01020 40
8
6
2
0
4
MCD089
30 I (mA)
C
(GHz)
T
f
Fig.7 Gain as a function of collector current;
typical values.
VCE = 8 V; f = 500 MHz.
handbook, halfpage
0
30
20
10
010 20 40
IC (mA)
gain
(dB)
30
MBB255
MSG
GUM
Fig.8 Gain as a function of collector current;
typical values.
VCE = 8 V; f = 1 GHz.
handbook, halfpage
0
30
20
10
010 20 40
MBB256
30
gain
(dB)
I (mA)
C
MSG
GUM
1997 Oct 29 6
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFR93A
Fig.9 Gain as a function of frequency;
typical values.
IC= 10 mA; VCE =8V.
handbook, halfpage
50
010
MBB257
102103104
10
20
30
40
gain
(dB)
f (MHz)
MSG
GUM
Gmax
Fig.10 Gain as a function of frequency;
typical values.
IC= 30 mA; VCE =8V.
handbook, halfpage
50
010
MBB258
102103104
10
20
30
40
gain
(dB)
f (MHz)
MSG
GUM
Gmax
Fig.11 Circles of constant noise figure;
typical values.
IC= 4 mA; VCE = 8 V; f = 800 MHz; Tamb =25°C.
handbook, halfpage
02040 80
40
20
20
40
0
MBB253
60 G (mS)
S
BS
(mS)
2.0 2.5
1.6 F = 3.5 dB3.0
Fig.12 Circles of constant noise figure;
typical values.
IC= 4 mA; VCE = 8 V; f = 800 MHz; Tamb =25°C.
handbook, halfpage
0
0
10
20
30 20 40 60
MBB254
G (mS)
S
BS
(mS)
10
20
30
2.5
3.0
3.5
2.3
F = 4.0 dB
1997 Oct 29 7
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFR93A
Fig.13 Minimum noise figure as a function of
collector current; typical values.
VCE =8V.
handbook, halfpage
4
2
1
0
MCD094
101
3
F
(dB)
I (mA)
C
f = 2 GHz
500 MHz
1 GHz
102
Fig.14 Minimum noise figure as a function of
frequency; typical values.
VCE =8V.
handbook, halfpage
4
2
1
0
MCD095
3
F
(dB)
f (MHz)
5 mA
10 mA
104
103
102
I = 30 mA
C
Fig.15 Intermodulation distortion; typical values.
VCE = 8 V; VO= 425 mV (52.6 dBmV);
fp+f
q
f
r= 793.25 MHz; Tamb =25°C.
Measured in MATV test circuit (see Fig.2)
handbook, halfpage
MBB263
(dB)
01020 40
40
65
45
30
50
55
60
I (mA)
C
dim
Fig.16 Second order intermodulation distortion;
typical values.
VCE = 8 V; VO= 200 mV (46 dBmV);
fp+f
q
f
r= 810 MHz; Tamb =25°C.
Measured in MATV test circuit (see Fig.2)
handbook, halfpage
01020 40
30
55
35
MBB264
30
40
45
50
I (mA)
C
d2
(dB)
1997 Oct 29 8
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFR93A
Fig.17 Common emitter input reflection coefficient (S11).
IC= 30 mA; VCE = 8 V; Zo=50; Tamb =25°C.
handbook, full pagewidth
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
– j
MBB259
500
200
100 MHz
10.2 1052
0.5
1200
800 1000
Fig.18 Common emitter forward transmission coefficient (S21).
IC= 30 mA; VCE = 8 V; Tamb =25°C.
handbook, full pagewidth
MBB261
ϕ
ϕ
0o
30o
60o
90o
120o
150o
180o
150o
120o
90o60o
30o
100
10 20 30
200
500
800
1000
1200 MHz
1997 Oct 29 9
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFR93A
Fig.19 Common emitter reverse transmission coefficient (S12).
IC= 30 mA; VCE = 8 V; Tamb =25°C.
handbook, full pagewidth
MBB262
ϕ
ϕ
0o
30o
60o
90o
120o
150o
180o
150o
120o
90o60o
30o
200
1200
0.05 0.1 0.15
100 MHz
500
800
1000
Fig.20 Common emitter output reflection coefficient (S22).
IC= 30 mA; VCE = 8 V; Zo=50; Tamb =25°C.
handbook, full pagewidth
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
– j
MBB260
10.2 10520.5
1200
800
1000 500
200
100 MHz
1997 Oct 29 10
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFR93A
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
1997 Oct 29 11
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFR93A
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Internet: http://www.semiconductors.philips.com
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© Philips Electronics N.V. 1997 SCA55
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Printed in The Netherlands 127127/00/02/pp12 Date of release: 1997 Oct 29 Document order number: 9397 750 02764