Specifications
7
C-BAND, L-BAND, PASS-BAND
LOW-LEAKAGE PIN PHOTODIODES
Parameter EPM 605 EPM 606 EPM 613 EPM 650
Activediameter Typical 60µm 60µm 75µm 100µm
Responsivity
l=980nm Minimum — — 0.30A/W —
l=1310nm Minimum 0.80A/W — 0.85A/W 0.80A/W
l =1550nm Minimum 0.85A/W 0.85A/W 0.0004A/W 0.85A/W
l=1625nm Minimum — 0.80A/W — —
Backreflection
l=980nm Minimum — — −30dB —
l=1310nm Minimum — — −40dB −27dB
l=1550nm Minimum −40dB — — —
l=1625nm Minimum — −40dB — —
Dark current
Standardleakage Maximum 0.6nA 0.6nA 1.0nA 1.0nA
Lowleakage Maximum 0.08nA 0.08nA — —
Capacitance1 Maximum 0.75pF 0.75pF 0.9pF 1.25pF
Bandwidth2 Typical 2.0GHz 2.0GHz 1.5GHz 1.5GHz
PDL
l =980nm Typical — — 0.2dB —
l=1310nm Typical 0.1dB — — 0.1dB
l =1550nm Typical 0.1dB 0.1dB — —
l=1625nm Typical — 0.1dB — —
Isolation between bands
1310and1550nm Typical — — 33dB —
980and1550nm Typical — — 29dB —
MaximumRatings
Forward current3 Maximum 10mA
Reverse current4 Maximum 10mA
Reversevoltage Maximum 25V
Powerdissipation Maximum 100mW
Operatingcasetemperature −40to85°C
Solderingtemperature Maximum 250°C
Storage temperature −40to85°C
1.Measuredwithcasegrounded.
2.−3dBpointintoa50W load.
3.Currentthatmaydamagedeviceunderforwardbias.
4.Currentthatmaydamagedeviceunderreversebias.