PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications www.onsemi.com * Complement to BD135, BD137 and BD139 Respectively * These are Pb-Free Devices ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Symbol BD136 BD138 BD140 BD136 BD138 BD140 VCBO VEBO Collector Current (DC) Unit V -45 -60 -80 VCEO Emitter-Base Voltage Max V -45 -60 -80 -5 V IC -1.5 A Collector Current (Pulse) ICP -3.0 A Base Current IB -0.5 A TO-126 CASE 340AS 1 2 3 1 Emitter 2 Collector 3 Base MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. YWW BD1XX THERMAL CHARACTERISTICS Rating Symbol Max Unit Collector Dissipation PC 12.5 W Collector Dissipation (TA = 25C) PC 1.25 W Junction Temperature TJ 150 C Storage Temperature Range TSTG -55~150 C Y WW BD1XX XX ORDERING INFORMATION Device 1 Shipping 60 Units/ Tube BD13610S 500 Units/ Bulk Box BD13616STU 60 Units/ Tube BD13810STU November, 2019 - Rev. 1 Package BD13610STU BD13616S (c) Semiconductor Components Industries, LLC, 2000 = Year = Work Week = Specific Device Code = 36, 38, 40 TO-126 (Pb-Free) 500 Units/ Bulk Box 60 Units/ Tube BD13816STU 60 Units/ Tube BD14010STU 60 Units/ Tube BD14016STU 60 Units/ Tube BD14016S 500 Units/ Bulk Box Publication Order Number: BD136/D BD136 Series ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol VCEO(sus) Parameter Test Condition Collector-Emitter Sustaining Voltage (Note 1) IC = -30 mA, IB = 0 BD136 BD138 BD140 Min. Typ. Max. Units V -45 -60 -80 ICBO Collector Cut-off Current VCB = -30 V, IE = 0 -0.1 mA IEBO Emitter Cut-off Current VEB = -5 V, IC = 0 -10 mA hFE1 DC Current Gain (Note 1) VCE = -2 V, IC = -5 mA hFE2 25 VCE = -2 V, IC = -150 mA BD13610/BD13810/BD14010 BD13616/BD13816/BD14016 hFE3 VCE = -2 V, IC = -500 mA 63 100 160 250 25 VCE(sat) Collector-Emitter Saturation Voltage (Note 1) IC = 500 mA, IB = 50 mA -0.5 V VBE(on) Base-Emitter ON Voltage (Note 1) VCE = -2 V, IC = -0.5 A -1 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: PW = 350 ms, duty Cycle = 2% Pulsed www.onsemi.com 2 BD136 Series TYPICAL PERFORMANCE CHARACTERISTICS VCE = -2 V hFE, DC CURRENT GAIN 90 80 70 60 50 40 30 20 10 0 -10 -1000 -100 -500 VCE(sat), SATURATION VOLTAGE [mV] 100 -450 -350 -300 -250 -150 -100 -50 -0 -1E-3 -1 -0.1 -10 Figure 2. Collector-Emitter Saturation Volatage -1.1 -10 -1.0 -0.9 IC, COLLECTOR CURRENT [A] VBE(sat) IC = 10 IB -0.8 VBE(on) VCE = -5 V -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 -1E-3 -0.01 -0.1 -1 20.0 15.0 12.5 10.0 7.5 5.0 2.5 75 100 125 150 -10 -100 Figure 4. Safe Operating Area 17.5 50 DC VCE, COLLECTOR-EMITTER VOLTAGE [V] Figure 3. Base-Emitter Voltage 25 1 ms IC MAX. (Continues) -0.1 IC, COLLECTOR CURRENT [A] 0 10 ms 100 ms -0.01 -1 -10 -1 IC MAX. (Pulsed) BD140 BD138 BD136 VBE, BASE-EMITTER VOLTAGE [V] -0.01 IC, COLLECTOR CURRENT [A] Figure 1. DC Current Gain PC, POWER DISSIPATION [W] IC = 10 IB -200 IC[mA], COLLECTOR CURRENT 0.0 IC = 20 IB -400 175 TC, CASE TEMPERATURE [C] Figure 5. Power Derating www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-126-3LD CASE 340AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13817G TO-126-3LD DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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