Document Number: 86051 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 25-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 161
Standard Avalanche Sinterglass Diode
BYW82, BYW83, BYW84, BYW85, BYW86
Vishay Semiconductors
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
Glass passivated junction
Hermetically sealed package
Controlled avalanche characteristics
Low reverse current
High surge current loading
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
Rectification, general purpose
949588
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYW82 VR = 200 V; IFAV = 3 A SOD-64
BYW83 VR = 400 V; IFAV = 3 A SOD-64
BYW84 VR = 600 V; IFAV = 3 A SOD-64
BYW85 VR = 800 V; IFAV = 3 A SOD-64
BYW86 VR = 1000 V; IFAV = 3 A SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak
reverse voltage See electrical characteristics
BYW82 VR = VRRM 200 V
BYW83 VR = VRRM 400 V
BYW84 VR = VRRM 600 V
BYW85 VR = VRRM 800 V
BYW86 VR = VRRM 1000 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 100 A
Repetitive peak forward current IFRM 18 A
Average forward current IFAV 3A
Pulse avalanche peak power tp = 20 μs, half sine wave, Tj = 175 °C PR1000 W
Pulse energy in avalanche mode, non
repetitive (inductive load switch off) I(BR)R = 1 A, Tj = 175 °C ER20 mJ
i2t-rating i2t40A
2s
Junction and storage temperature
range Tj = Tstg - 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, TL = constant RthJA 25 K/W
On PC board with spacing 25 mm RthJA 70 K/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86051
162 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 25-Aug-10
BYW82, BYW83, BYW84, BYW85, BYW86
Vishay Semiconductors Standard Avalanche Sinterglass
Diode
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX UNIT
Forward voltage IF = 3 A VF--1V
Reverse current VR = VRRM IR-0.1A
VR = VRRM, Tj = 100 °C IR- 5 10 μA
Breakdown voltage IR = 100 μA, tp/T = 0.01, tp = 0.3 ms V(BR) - - 1600 V
Diode capacitance VR = 4 V, f = 1 MHz CD-4060pF
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr -3.55μs
IF = 1 A, dI/dt = 5 A/μs, VR = 50 V trr -4.57.5μs
Reverse recovery charge lF = 1 A, dI/dt = 5 A/μs Qrr - 8 12 μC
0 5 10 15 25
0
10
20
30
40
RthJA - Therm. Resist.
Junction/Ambient (K/W)
I - Lead Length (mm)
30
94 9563
20
ll
TL = constant
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 20 40 60 80 100 120 140 160 180
T
amb
- Ambient Temperature (°C)
16361
I
FAV
- Average Forward Current (A)
RthJA = 70 K/W
PCB: d = 25 mm
VR = VRRM
half sinewave
RthJA = 25 K/W
I = 10 mm
IF - Forward Current (A)
0.001
0.01
0.1
1
10
100
0 0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
16360
Tj = 25 °C
Tj = 175 °C
0
50
100
150
200
250
300
350
25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
16363
VR = VRRM
PR - Reverse Power Dissipation (mW)
PR-Limit
at 100 % VR
PR-Limit
at 80 % VR
BYW82, BYW83, BYW84, BYW85, BYW86
Standard Avalanche Sinterglass
Diode Vishay Semiconductors
Document Number: 86051 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 25-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 163
Fig. 5 - Reverse Current vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
1
10
100
1000
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16362
VR = VRRM
I
R
- Reverse Current (A)
0
20
40
60
80
100
0.1 1 10 100
VR - Reverse Voltage (V)
16364
CD - Diode Capacitance (pF)
f = 1 MHz
1
10
100
1000
Zthp - Thermal Resistance for Pulse Cond. (K/W)
tp - Pulse Length (s)
94 9568
IFRM - Repetitive Peak
Forward Current (A)
10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 10 1
tp/T = 0.05
VRRM = 1000 V RthJA =70K/W
tp/T=0.5
tp/T=0.2
tp/T=0.1
tp/T = 0.01
Tamb =25°C
45 °C
70°C
100°C
60 °C
tp/T = 0.02
Cathode Identification 4.3 (0.168) max.
1.35 (0.053) max.
4 (0.156) max.
Sintered Glass Case
SOD-64
26(1.014) min. 26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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