DMG1013T-7 - DIODES INC - Datasheet.Directory

DMG1013T

NEW PRODUCT

P-CHANNEL ENHA NCEMENT MODE MOSFET

Product Summa r y

V(BR)DSS RDS(on) ID

TA = +25°C

-20V

700mΩ @ VGS = -4.5V -460mA

900mΩ @ VGS = -2.5V -420mA

1300mΩ @ VGS = -1.8V -350mA

Features an d Benef its

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 3kV

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Description and Applications

This new generation MOSFET is designed to minimize the on-state

resistanc e (RDS(on)) and yet maintain superior switching performance,

making it ideal for high effici ency power managem ent applications.

• DC-DC Converters

• Load Switch

• Power Management Functions

Mechanical Data

• Case: SOT523

• Case Material: Molded Plast ic, “Green” Molding Com pound.

UL Flammabilit y Classification Rating 94V-0

• Moisture Sensitivi t y: Level 1 per J-STD-020

• Terminals: Finish  Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connecti ons: See Diagram

•

Weight: 0.002 grams (approxim at e)

Ordering Information (Note 3)

Part Number

Case

Packaging

DMG1013T-7

SOT523

3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead -free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2009

2010

2011

2012

2013

2014

2015

2016

2017

Code

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

SOT523

Top View

Equivalent Circui t

Top View

PA1 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: W = 2009)

M = Month (ex: 9 = September)

PA1 YM

Source

Gate

Protection

Diode

Gate

Drain

ESD PROTECTED TO 3kV

DMG1013T

Document number: DS31784 Rev. 6 - 2 1 of 6

www.diodes.com August 2014

DMG1013T

NEW PRODUCT

Maximum Ratings @TA = +25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

-20

Gate-Source Voltage

VGSS

±6

Drain Current (Note 5) Steady

State

TA = +25°C

TA = +85°C

ID -0.46

-0.33 A

Pulsed Drain Current (Note 6)

IDM

-6

Thermal Characteristics @TA = +25°C unless otherwise specif ied

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.27

Thermal Resistance, Junction to Ambient (Note 5)

RθJA

461

°C/W

Operating and Storage Tem perature Range

STG

-55 to +150

°C

Electrical Characteristics @TA = +25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CH ARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

-20

VGS = 0V , ID = -250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

-100

VDS = -20V, VGS = 0 V

Gate-Source Leakage

IGSS

±2.0

µA

VGS = ±4.5V, VDS = 0V

ON CHARACTERIS TICS (Note 7)

Gate Threshold Voltage

VGS(th)

-0.5

-1.0

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance RDS (ON) -

0.5

0.7

VGS = -4. 5V, ID = -350mA

0.7

0.9

VGS = -2. 5V, ID = -300mA

1.0

1.3

VGS = -1. 8V, ID = -150mA

Forward Transfer Admittance

|Yfs|

0.9

VDS = -10V, ID = -250mA

Diode Forward Voltage

VSD

-0.8

-1.2

VGS = 0V , IS = -150mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

59.76

VDS = -16V, VGS = 0V,

f = 1.0MHz

Output Capacit ance

Coss

12.07

Reverse Transfer Capacitance

Crss

6.36

Total Gate Charge

580

VGS = -4.5V, VDS = -10V,

ID = -250mA

Gate-Source Charge

Qgs

104

Gate-Drain Charge

Qgd

125

Turn-On Delay Time

tD(on)

5.1

VDD = -10V, VGS = -4.5V,

RL = 47Ω, RG = 10Ω,

ID = -200mA

Turn-On Rise Time

8.1

Turn-Off Delay Time

tD(off)

28.4

Turn-Off Fall Time

20.7

Notes: 5. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in

steady-state condition.

6. Same as note 5, exce pt the device is pulsed at dut y c ycl e of 1% for a puls e wi dth of 10 µs.

7. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300µs; duty cycle ≤ 2%.

8. For design aid only, not subject to production testing.

DMG1013T

Document number: DS31784 Rev. 6 - 2 2 of 6

www.diodes.com August 2014

DMG1013T

NEW PRODUCT

0.3

0.6

0.9

1.2

1.5

0 1 2 3 4 5

Fig. 1 Typical Output Characteristic

-V , DRAIN-SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

V = -1.2V

V = -1.5V

V = -2.0V

V = -2.5V

V = -3.0V

V = -4.5V

V = -8.0V

00.5 11.5 22.5 3

Fig. 2 Ty pical Tra ns fer Characteristic

-V , GATE-SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = -5V

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

00.3 0.6 0.9 1.2 1.5

Fig. 3 Typical O n-Resis tance

vs. Drain Current and Gate Voltage

-I , DRAIN-SOURCE CURRENT (A)

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) Ω

V = -2.5V

V = -4.5V

V = -1.8V

0.2

0.4

0.6

0.8

1.0

00.3 0.6 0.9 1.2 1.5

R, DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

-I , DRAIN CURRENT (A)

Fig. 4 Typical On-Resistance

vs. Drain Curre nt and Tem perature

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = -4.5V

Fig. 5 On-Resis tan c e Variation with Temperatur e

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

0.5

0.7

0.9

1.1

1.3

1.5

1.7

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DSON

V = -4.5V

I = -1.0A

V = -2.5V

I = -500mA

0.2

0.4

0.6

0.8

1.0

1.2

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

R , DRAIN-SOURCE

ON-RESISTANCE ( )

DSON

Ω

V = -4.5V

I = -1.0A

V = -2.5V

I = -500mA

DMG1013T

Document number: DS31784 Rev. 6 - 2 3 of 6

www.diodes.com August 2014

DMG1013T

NEW PRODUCT

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

0.4

0.8

1.2

1.6

-V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = -1mA

I = -250µA

0.2 0.4 0.6 0.8 1.0 1.2

Fig. 8 Diode Forward Voltage vs. Current

-V , SOURCE-DRAIN VOLTAGE (V)

-I , SOURCE CURRENT (A)

T = 25°C

100

0 5 10 15 20

Fig. 9 Typical Total Capacit ance

-V , DRAIN-SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

iss

rss

oss

f = 1MHz

00.2 0.4 0.6 0.8 1.0

Q , T OTAL GATE CHARGE (nC)

Fig. 10 Gat e-Char ge Characteristics

-V , GATE-SOURCE VOLTAGE (V)

0.00001 0.001 0.01 0.1 110 100 1,000

Fig. 11 Tran sient Therma l Response

t , PULSE DURATION TIME (s)

0.0001

0.001

0.01

0.1

r(t), TRANSIENT THERMAL RESISTANCE

T - T = P * R (t)

Duty Cycle, D = t /t

J A JA

R (t) = r(t) *

θJA

R = 504°C/W

P(pk) t

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

DMG1013T

Document number: DS31784 Rev. 6 - 2 4 of 6

www.diodes.com August 2014

DMG1013T

NEW PRODUCT

Package Ou t lin e Dim en sio ns

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

SOT523

Dim

Min

Max

Typ

0.15

0.30

0.22

0.75

0.85

0.80

1.45

1.75

1.60



0.50

0.90

1.10

1.00

1.50

1.70

1.60

0.00

0.10

0.05

0.60

0.80

0.75

0.10

0.30

0.22

0.10

0.20

0.12

0.45

0.65

0.50

0°

8°



All Dimensions in mm

Dimensions

Value (in mm)

1.8

0.4

0.51

1.3

0.7

DMG1013T

Document number: DS31784 Rev. 6 - 2 5 of 6

www.diodes.com August 2014

DMG1013T

NEW PRODUCT

IMPORTANT NOTICE

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final and determinative f orm at released by Diodes I ncorporat ed.

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written approval of the Chief Executive Off icer of Diodes I ncorporat ed. As us ed herein:

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representati ves against any dam ages arising out of the use of Diodes Incorporat ed products i n such safety-cri tical, life support devices or systems.

www.diodes.com

DMG1013T

Document number: DS31784 Rev. 6 - 2 6 of 6