IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 30A 350m 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 30 A IDM TC = 25C, pulse width limited by TJM 75 A IA TC = 25C 15 A EAS TC = 25C 2 J dV/dt IS IDM, VDD VDSS, TJ 150C 20 V/ns PD TC = 25C 890 W -55 ... +150 C Features TJM 150 C Tstg -55 ... +150 C * International standard package * Encapsulating epoxy meets 300 C * miniBLOC with Aluminium nitride 2500 3000 V~ V~ * Fast recovery diode * Unclamped Inductive Switching (UIS) 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60 Hz, RMS IISOL 1mA Md Mounting torque Terminal connection torque S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. UL 94 V-0, flammability classification isolation t = 1min t = 1s Weight Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 V 6.5 V 300 nA rated * Low package inductance - easy to drive and to protect Advantages * Easy to mount * Space savings * High power density Applications z z TJ = 125C (c) 2008 IXYS CORPORATION, All rights reserved 50 A 5 mA 350 m z z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Laser Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99884A (4/08) IXFN30N120P Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 0.5 * ID25, Note 1 RGi 13 22 S Gate input resistance 1.70 19 nF VGS = 0V, VDS = 25V, f = 1MHz 960 pF 25 pF Ciss Coss SOT-227B Outline Crss td(on) Resistive Switching Times 57 ns tr VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 60 ns td(off) RG = 1 (External) 95 ns 56 ns 310 nC 104 nC 137 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd RthJC 0.14 RthCS 0.05 Source-Drain Diode TJ = 25C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM C/W C/W Characteristic Values Min. Typ. Max. 30 A Repetitive, pulse width limited by TJM 120 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 15A, -di/dt = 100A/s VR = 100V 1.6 C 14 A Note 1: Pulse test, t 300s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN30N120P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 30 65 VGS = 10V 27 VGS = 10V 9V 60 55 24 50 8V 45 ID - Amperes ID - Amperes 21 18 15 12 7V 9 40 8V 35 30 25 20 15 6 7V 10 3 6V 6V 5 0 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 20 25 30 Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 30 2.8 VGS = 10V 8V 27 2.6 VGS = 10V 2.4 RDS(on) - Normalized 24 21 ID - Amperes 15 VDS - Volts VDS - Volts 7V 18 15 12 9 2.0 I D = 30A 1.8 1.6 I D = 15A 1.4 1.2 1.0 6V 6 2.2 0.8 3 5V 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 35 VGS = 10V 2.4 TJ = 125C 30 25 2 ID - Amperes RDS(on) - Normalized 2.2 1.8 1.6 20 15 1.4 10 1.2 TJ = 25C 1 5 0.8 0 0 10 20 30 40 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 50 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN30N120P Fig. 7. Input Admittance Fig. 8. Transconductance 35 30 TJ = - 40C 30 25C 25 TJ = 125C 25C - 40C 20 g f s - Siemens ID - Amperes 25 15 10 125C 20 15 10 5 5 0 0 4.5 5 5.5 6 6.5 7 7.5 0 8 2 4 6 VGS - Volts 10 12 14 16 18 20 22 24 26 28 30 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 90 16 80 14 70 VDS = 600V I D = 15A I G = 10mA 12 VGS - Volts 60 IS - Amperes 8 50 40 TJ = 125C 10 8 6 30 TJ = 25C 4 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1.3 50 100 VSD - Volts 150 200 250 300 350 400 450 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 10,000 Ciss Z(th)JC - C / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_30N120P(97) 4-01-08-C