© 2008 IXYS CORPORATION, All rights reserved DS99884A (4/08)
VDSS = 1200V
ID25 = 30A
RDS(on) ≤≤
≤≤
≤ 350mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1200 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C30A
IDM TC= 25°C, pulse width limited by TJM 75 A
IATC= 25°C15A
EAS TC= 25°C2J
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 20 V/ns
PDTC= 25°C 890 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
VISOL 50/60 Hz, RMS t = 1min 2500 V~
IISOL ≤ 1mA t = 1s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.3/11.5 Nm/lb.in.
Weight 30 g
IXFN30N120P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 1200 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ± 30V, VDS = 0V ± 300 nA
IDSS VDS = VDSS 50 μA
VGS = 0V TJ = 125°C 5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 350 mΩ
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
•International standard package
•Encapsulating epoxy meets
UL 94 V-0, flammability classification
•miniBLOC with Aluminium nitride
isolation
•Fast recovery diode
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
- easy to drive and to protect
Advantages
•Easy to mount
•Space savings
•High power density
PolarTM Power MOSFET
HiPerFETTM
Applications
zHigh Voltage Switched-mode and
resonant-mode power supplies
zHigh Voltage Pulse Power
Applications
zHigh Voltage Discharge circuits in
Laser Pulsers, Spark Igniters, RF
Generators
zHigh Voltage DC-DC converters
zHigh Voltage DC-AC inverters
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN30N120P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 13 22 S
RGi Gate input resistance 1.70 Ω
Ciss 19 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 960 pF
Crss 25 pF
td(on) Resistive Switching Times 57 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 60 ns
td(off) RG= 1Ω (External) 95 ns
tf 56 ns
Qg(on) 310 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 104 nC
Qgd 137 nC
RthJC 0.14 °C/W
RthCS 0.05 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 30 A
ISM Repetitive, pulse width limited by TJM 120 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 1.6 μC
IRM 14 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IF = 15A, -di/dt = 100A/μs
VR = 100V
SOT-227B Outline
© 2008 IXYS CORPORATION, All rights reserved
IXFN30N120P
Fi g. 1. Outp ut C h aracter isti cs
@ 25ºC
0
3
6
9
12
15
18
21
24
27
30
012345678910
V
DS
- Volts
I
D
- Am peres
V
GS
= 10
V
7
V
8V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
5
10
15
20
25
30
35
40
45
50
55
60
65
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Am peres
V
GS
= 10
V
9
V
7V
6V
8
V
Fig. 3. Output Characteristics
@ 125ºC
0
3
6
9
12
15
18
21
24
27
30
0246810121416182022
V
DS
- Volts
I
D
- A mp er es
V
GS
= 10
V
8
V
5
V
7
V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 15A Val u e
vs. Ju ncti o n Temper atu r e
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centi grad e
R
DS(on)
- N ormaliz ed
V
GS
= 10
V
I
D
= 30
A
I
D
= 15
A
Fig. 5. R
DS(on)
Normalized to I
D
= 15A Value
vs. Dr ai n C u rr en t
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 10203040506070
I
D
- Amp eres
R
DS(on)
- N o rm a liz ed
V
GS
= 10
V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 6 . Maximu m Dr ai n C u r r en t vs .
Cas e Temp er at u r e
0
5
10
15
20
25
30
35
-50-250 255075100125150
T
C
- Degrees Centigrad e
I
D
- A mp e re s
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN30N120P
IXYS REF: F_30N120P(97) 4-01-08-C
Fig. 7. Input Admittance
0
5
10
15
20
25
30
4.5 5 5.5 6 6.5 7 7.5 8
V
GS
- V olt s
I
D
- Am peres
TJ
= 125ºC
25ºC
- 40ºC
Fig. 8. Tr ansconductance
0
5
10
15
20
25
30
35
0 2 4 6 8 1012141618202224262830
I
D
- Amp eres
g
f s
- Siemens
TJ
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
0.30.40.50.60.70.80.9 1 1.11.21.3
V
SD
- Vo lts
I
S
- A m p e res
TJ
= 125ºC
TJ = 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400 450
Q
G
- NanoCoulombs
V
GS
- V o lts
VDS
= 600V
I D = 15A
I G = 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - P icoFarads
f
= 1 MH
Ciss
Crss
Coss
Fi g . 12. Maximu m Tr an sien t Th er mal
Impedance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W