ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
11/12/00
DB91024m-AAS/A2
APPROVALS
lUL recognised, File No. E91231
DESCRIPTION
The IS4N45, IS4N46 are optically coupled
isolators consisting of an infrared light emitting
diode and a NPN silicon photo darlington which
has an integral base-emitter resistor to optimise
switching speed and elevated temperature
characteristics in a standard 6pin dual in line
plastic package. These devices are designed to
equal the 4N45, 4N46 characteristics while
providing greater voltage and current capability.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lHigh Current Transfer Ratio ( 1500% typ.)
lHigh BVCEO ( 55V min.)
lInternal base-emitter resistor minimizes
output leakage
lLow input current 0.5mA IF
APPLICATIONS
lTelephone ring detector
lDigital logic ground isolation
lLow input current line receiver
lLogic to reed relay interface
lLevel shifting
lInterface between logic families
lLine voltage status indicator - low input
power dissipation
IS4N46
IS4N45
LOW INPUT CURRENT
DARLINGTON OUTPUT OPTICALLY
COUPLED ISOLATOR
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse Voltage 6V
Peak Forward Current 3A
(1µs pulse, 300pps)
Power Dissipation 100mW
OUTPUT TRANSISTOR
Output Voltage ( pin 5 - 4 ) VO55V
Emitter-baseVoltage (pin 4 - 6) 7V
Power Dissipation 200mW
POWER DISSIPATION
Total Power Dissipation 260mW
Dimensions in mm
1
3 4
6
2 5
0.5 0.26
0.5
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
7.62
6.62
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
10.46
9.86
0.6
0.1 1.25
0.75
DB91024m-AAS/A1
11/12/00
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.5 VIF = 10mA
Reverse Voltage (VR)6VIR = 10µA
Reverse Current (IR)10 µAVR = 6V
Output Output Breakdown Voltage ( pin 5 - 4) 55 VI54 = 1mA
Base Breakdown ( pin 4 - 6 ) 7VIE = 0.1mA
Logic High Output 100 µAV54 = 18V
Coupled DC Current Transfer Ratio ( CTR )
IS4N46 350 %0.5mA IF , 1V VCE
IS4N46 500 %1mA IF , 1V VCE
IS4N45 250 %1mA IF , 1V VCE
IS4N46, IS4N45 200 %10mA IF , 1.2V VCE
Logic Low Output Voltage ( VOL )
IS4N46 1.0 V0.5mA IF , 1.75mA IOL
IS4N46 1.0 V1mA IF , 5mA IOL
IS4N45 1.0 V1mA IF , 2.5mA IOL
IS4N46, IS4N45 1.2 V10mA IF , 20mA IOL
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 1011 VIO = 500V (note 1)
Input-output Capacitance Cf 0.5 pF V = 0, f =1MHz
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Output
VCC
Input
FIGURE 1
RL
SWITCHING SPECIFICATIONS AT TA = 25°C ( VCC = 5V Unless otherwise noted )
PARAMETER SYM DEVICE MIN TYP MAX UNITS TEST CONDITION
Propagation Delay Time tPHL IS4N46,45 80 µsIF = 1mA, RL = 10k
to Logic Low at Output ( fig.1) tPHL IS4N46,45 550 µsIF = 10mA, RL = 220
Propagation Delay Time tPLH IS4N46,45 1500 µsIF = 1mA, RL = 10k
to Logic High at Output( fig.1) tPLH IS4N46,45 150 500 µsIF = 10mA, RL = 220
Common Mode Transient
Immunity at Logic High CMH500 V/µsIF = 0mA,VCM = 10VPP
Level Output RL = 10k
Common Mode Transient
Immunity at Logic Low CML500 V/µsIF= 1mA,VCM= 10VPP
Level Output RL = 10k
tPHL tPLH
IF
0
VO
VO
2.5V
2.5V
VOL
5V
DB91024m-AAS/A1
11/12/00
0 1 2 3 4 5 6
0.01
0.1
Collector-emitter voltage VCE ( V )
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Normalized Output Current vs.
Collector-emitter Voltage
Collector dark current I CEO (nA)
Collector Dark Current vs.
Ambient Temperature
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
100
0
Collector power dissipation P C (mW)
Collector Power Dissipation vs. Ambient Temperature
50
0.1 1.0 10 100
Input current IF (mA)
Normalized Output Current vs.
Input Current
0.01
0.1
1.0
10
1.0
10
100
Normalized output current
IF = 1mA
10mA
50mA
1
10
100
1k
10k
100k
150
200
250
1.0
Normalized output current
Normalized Output Current vs.
Ambient Temperature
10
-50 -25 0 25 50 75 100
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Forward Current vs. Ambient Temperature
Forward current I F (mA)
70
80
Normalized to
IF = 1mA
(300µs pulse),
VCE = 5V
10mA
IF = 1mA
50mA
Normalized to
IF = 1mA
(300µs pulse),
VCE = 5V
TA = 25 °C
0.01
Normalized output current
50V
VCE
VCE = 5V
0.1
100
100
Normalized to
IF = 1mA
(300µs pulse),
VCE = 5V
TA = 25 °C
10V
VCE