NTE3027
Infrared Emitting Diode
High Speed for Remote Control
Description:
The NTE3027 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a
clear, blue–grey tinted plastic package.
Features:
DLow Forward Voltage
DHigh Radiant Power and Radiant Intensity
DSuitable for DC and High Pulse Current Operation
DHigh Reliability
DStandard T–1 3/4 (5mm) Package
Applications:
Infrared remote control and free air transmission systems with low forward voltage and comfort-
able radiation and angle requirements in combination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Reverse Voltage, VR5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, IF
Continuous 150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surge Forward Current (Note 2), IFSM 2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, PD210mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, TJ+100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, Topr –55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Soldering Temperature (t ≤ 5sec, 2mm from case), TL+260°C. . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, RthJA 375K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. tp = 100µs, tp/T = 0.5
Note 2. tp = 100µs
Electrical Characteristics: (TA = +25°C unless otherwis specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Voltage VFIF = 100mA, tp = 20ms –1.3 1.7 V
IF = 1.5A, tp = 100µs–2.2 3.4 V
Temperature Coefficient of Forward Voltage IF = 100mA – –1.3 –mV/°C
Reverse Current IRVR = 5V – – 100 µA
Junction Capacitance CjVR = 0, f = 1MHz, E = 0 –30 –pF
Radient Intensity IeIF = 100mA, tp = 20ms 10 17 –mW/sr
IF = 1.5A, tp = 100µs 85 160 –mW/sr
Angle of Half Intensity Φ–±22 –deg
Radient Power ΦeIF = 100mA, tp = 20ms –14 –mW
Temperature Coefficient of Radient Intensity IF = 20mA – –0.8 –%/°C
Peak Wavelength λpIF = 100mA –950 –nm
Temperature Coefficient of Peak Wavelength IF = 100mA –0.2 –nm/°C
Spectral Bandwidth ∆λ IF = 100mA –50 –nm
Rise Time trIF = 100mA –800 –ns
IF = 1.5A –400 –ns
Fall Time tfIF = 100mA –800 –ns
IF = 1.5A –400 –ns
.040
(1.01)
.230
(5.84)
Dia
Flat Denotes
Cathode
.100 (2.54)
.100 (2.54) R
.200 (5.08) Dia
Seating Plane
.025 (0.63) Max Sq
.050 (1.27) Typ .050 (1.27)
.100 (2.54)
.100 (2.54)
.340
(8.63)
.750
(19.05)
Min
Tolerance ±.010 (.254)
