GS1A – GS1M 1 of 4 © 2006 Won-Top Electronics
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GS1A – GS1M
1.0A SURFACE MOUNT STANDARD DIODE
Features
Diffused Junction
Ideally Suited for Automatic Assembly B
Low Forward Voltage Drop
Surge Overload Rating to 30A Peak D
Low Power Loss A
Built-in Strain Relief F
Plastic Case Material has UL Flammability
Classification Rating 94V-O C H G
E
Mechanical Data
Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic Symbol GS1A GS1B GS1D GS1G GS1J GS1K GS1M Unit
Peak Repetitive Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current @TL = 100°C IO 1.0 A
Non-Repetiti ve Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method) IFSM 30 A
Forward Voltage @IF = 1 .0A VFM 1.10 V
Peak Reverse Current @T
A = 25°C
At Rated DC Blocking Voltage @TA = 125°C IRM 5.0
200 µA
Reverse Recovery Time (Note 1) trr 2.5 µS
Typi cal Junction Capacitance (Note 2) Cj 15 pF
Typi cal Thermal Resistance (Note 3) RθJL 30 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +175 °C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
WTE
POWER SEM IC ON DUC TOR S
SMA/DO-214AC
Dim Min Max
A 2.29 2.92
B 4.00 4.60
C 1.27 1.90
D 0.152 0.305
E 4.80 5.30
F 2.00 2.44
G 0.051 0.203
H 0.76 1.52
All Dimensions in mm