2N4930* 2N4931* W BD FNEW ENGLAND SEMICONDUCTOR *also available as JAN, JANTX, JANTXV HIGH VOLTAGE , 5 WATT HIGH BREAKDOWN VOLTAGE PNP TRANSISTORS HIGH VOLTAGE AMPLIFIERS MAXIMUM RATINGS Rating Symbol | 2N4930 | 2N4931 Unit Collector-Emitter Voltage Vero 200 250 Vde Collector-Base Voltage Vou 200 250 Vde Emitter-Base Voltage Ves 40 Vde Collector Current - Continuous le 500 mAdc TO-39 Peak (1) Total! Device Dissipation Pp @Tc = 25C 5.0 Ww Derate above 25C 28.6 mW/'C MECHANICAL OUTLINE Operating and Storage Junction Ti. Trg -65 to +200 "C Temperature Range (1)Pulse Test: Pulse Width = 10ms, Duty Cycle < 10% ELECTRICAL CHARACTERISTICS (T,. = 25C unless otherwise noted) Characteristics | Symbol | Min | Max | Unit | OFF CHARACTERISTICS (00 eeses<sseeeee Collector-Emitter Sustaining Voltage Vcgo(sus) Vde AT Ic= 10 mAdc, Ip= 0 2N4930 200 E 2N4930 250 i Emitter-Base Cutoff Current lego Ven = 3 Vde, I= 0 1.0 | pAde searne UHI PLATE D Collector-Base Cutoff Current Teno Vog = 150 Vde, I, = 0 1.0 pAdc ON CHARACTERISTICS (1) DC Current Gain gg Ic= 1.0mAdc, Veg = 10 Vde 20 Ic= 10 mAdc, Veg = 10 Vde 20 200 I.= 30 mAdc, Vep= 10 Vde 20 Collector-Emitter Saturation Voltage Vercat) Vde I= 10mAdc, Ig = 1.0 mAdc 5.0 Base-Emitter Voltage Vee Vde Ip = 10 mAdc, Vcog = 10 Vde 1.0 TRANSIENT CHARACTERISTICS Current-Gain--Bandwidth Product fT MHz I,= 2.0mAdce, Vog= 20 Vde, f= 20 MHz 10 Common-Base Output Capacitance Cop Ven = 10 Vde, 1, = 0, 15 p Emitter-Base Capacitance orn Var = 0.5 Vde, Ie = 0, F= 140 kHz 400 p PIN1. EMITTER Small-Signal Current Gain Hee PIN 2. BASE Ie = 10mAdc, Vog= 10 Vde, f= 5.0 MHz 15 PIN 3. COLLECTOR (1)Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%. 6 Lake Street Lawrence,MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-302 REV: -- NEW ENGLAND SEMICONDUCTOR