50RIA120M - Vishay Presicion Group

Document Number: 93711 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 19-Sep-08 1

Medium Power Thyristors

(Stud Version), 50 A

50RIA Series

Vishay High Power Products

FEATURES

• High current rating

• Excellent dynamic characteristics

• dV/dt = 1000 V/µs option

• Superior surge capabilities

• Standard package

• Metric threads version available

• Types up to 1200 V VDRM/VRRM

• RoHS compliant

TYPICAL APPLICATIONS

• Phase control applications in converters

• Lighting circuits

• Battery charges

• Regulated power supplies and temperature and speed

control circuit

• Can be supplied to meet stringent military, aerospace and

other high reliability requirements

PRODUCT SUMMARY

IT(AV) 50 A

TO-208AC (TO-65)

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

IT(AV)

50 A

TC94 °C

IT(RMS) 80 A

ITSM

50 Hz 1430

60 Hz 1490

I2t

50 Hz 10.18

kA2s

60 Hz 9.30

VDRM/VRRM 100 to 1200 V

tqTypical 110 µs

TJ- 40 to 125 °C

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93711

2Revision: 19-Sep-08

50RIA Series

Vishay High Power Products Medium Power Thyristors

(Stud Version), 50 A

ELECTRICAL SPECIFICATIONS

Notes

(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs

(2) For voltage pulses with tp ≤ 5 ms

VOLTAGE RATINGS

TYPE NUMBER VOLTAGE

CODE

VDRM/VRRM, MAXIMUM

REPETITIVE PEAK AND

OFF-STATE VOLTAGE (1)

VRSM, MAXIMUM NON-REPETITIVE

PEAK VOLTAGE (2)

IDRM/IRRM MAXIMUM

AT TJ = TJ MAXIMUM

50RIA

10 100 150

20 200 300

40 400 500

60 600 700

80 800 900

100 1000 1100

120 1200 1300

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current

at case temperature IT(AV) 180° sinusoidal conduction 50 A

94 °C

Maximum RMS on-state current IT(RMS) 80 A

Maximum peak, one-cycle

non-repetitive surge current ITSM

t = 10 ms No voltage

reapplied

Sinusoidal half wave,

initial TJ = TJ maximum

1430

t = 8.3 ms 1490

t = 10 ms 100 % VRRM

reapplied

1200

t = 8.3 ms 1255

Maximum I2t for fusing I2t

t = 10 ms No voltage

reapplied

10.18

kA2s

t = 8.3 ms 9.30

t = 10 ms 100 % VRRM

reapplied

7.20

t = 8.3 ms 6.56

Maximum I2√t for fusing I2√tt = 0.1 to 10 ms, no voltage reapplied,

TJ = TJ maximum 101.8 kA2√s

Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.94 V

High level value of threshold voltage VT(TO)2 (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ maximum 1.08

Low level value of on-state

slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 4.08

mΩ

High level value of on-state

slope resistance rt2 (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ maximum 3.34

Maximum on-state voltage VTM Ipk = 157 A, TJ = 25 °C 1.60 V

Maximum holding current IH

TJ = 25 °C, anode supply 22 V, resistive load,

initial IT = 2 A 200 mA

Latching current ILAnode supply 6 V, resistive load 400

Document Number: 93711 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 19-Sep-08 3

50RIA Series

Medium Power Thyristors

(Stud Version), 50 A Vishay High Power Products

Note

(1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum rate of

rise of turned-on current

VDRM ≤ 600 V

dI/dt

TC = 125 °C, VDM = Rated VDRM,

Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum

ITM = (2 x rated dI/dt) A

200

A/µs

VDRM ≤ 1600 V 100

Typical delay time td

TC = 25 °C, VDM = Rated VDRM, ITM = 10 A dc resistive circuit

Gate pulse = 10 V, 15 Ω source, tp = 20 µs 0.9

µs

Typical turn-off time tq

TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/µs

dIr/dt = - 10 A/µs, VR = 50 V 110

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of

off-state voltage dV/dt

TJ = TJ maximum linear to 100 % rated VDRM 200

V/µs

TJ = TJ maximum linear to 67 % rated VDRM 500 (1)

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power PGM TJ = TJ maximum, tp ≤ 5 ms 10

Maximum average gate power PG(AV) 2.5

Maximum peak positive gate current IGM 2.5 A

Maximum peak positive gate voltage +VGM 20

Maximum peak negative gate voltage -VGM 10

DC gate current required to trigger IGT

TJ = - 40 °C

Maximum required gate trigger

current/voltage are the lowest

value which will trigger all units 6 V

anode to cathode applied

250

mATJ = 25 °C 100

TJ = 125 °C 50

DC gate voltage required to trigger VGT

TJ = - 40 °C 3.5

TJ = 25 °C 2.5

DC gate current not to trigger IGD

TJ = TJ maximum,

VDRM = Rated voltage

Maximum gate current/voltage not

to trigger is the maximum value

which will not trigger any unit with

rated VDRM anode to cathode

applied

5.0 mA

DC gate voltage not to trigger VGD TJ = TJ maximum 0.2 V

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93711

4Revision: 19-Sep-08

50RIA Series

Vishay High Power Products Medium Power Thyristors

(Stud Version), 50 A

Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction and

storage temperature range TJ, TStg - 40 to 125 °C

Maximum thermal resistance,

junction to case RthJC DC operation 0.35

K/W

Maximum thermal resistance,

case to heatsink RthCS Mounting surface, smooth, flat and greased 0.25

Allowable mounting torque

Non-lubricated threads 3.4 + 0 - 10 %

(30) N · m

(lbf · in)

Lubricated threads 2.3 + 0 - 10 %

(20)

Approximate weight 28 g

1.0 oz.

Case style See dimensions - link at the end of datasheet TO-208AC (TO-65)

ΔRthJC CONDUCTION

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.078 0.057

TJ = TJ maximum K/W

120° 0.094 0.098

90° 0.120 0.130

60° 0.176 0.183

30° 0.294 0.296

100

110

120

130

0 102030405060

30° 60° 90°

120°

180°

Average On-state Current (A)

Maximum All owable Case Temperature (°C)

Conduction Angle

50RIA Series

R (DC) = 0.35 K/W

thJC

100

110

120

130

0 1020304050607080

30°

60°

90°

120°

180°

Average On-state Current (A)

Maximum Allowable Case Temperature (°C)

Conduction Period

50RIA Series

R (DC) = 0.35 K/W

thJC

Document Number: 93711 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 19-Sep-08 5

50RIA Series

Medium Power Thyristors

(Stud Version), 50 A Vishay High Power Products

Fig. 3 - On-State Power Loss Characteristics

Fig. 4 - On-State Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 7 - Forward Voltage Drop Characteristics

0 1020304050

RMS Limit

Conduction Angle

180°

120°

90°

60°

30°

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

50RIA Series

T = 125°C

100

0 1020304050607080

180°

120°

90°

60°

30°

RMS Limit

Conduction Period

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

50RIA Series

T = 125°C

600

700

800

900

1000

1100

1200

1300

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

50RIA Series

500

600

700

800

900

1000

1100

1200

1300

1400

1500

0.01 0.1 1

Peak Half Sine Wave On-state Current (A)

Pulse Train Duration (s)

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conducti on May Not Be Maintai ned.

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

RRM

50RIA Series

100

1000

0.5 1 1.5 2 2.5 3 3.5 4 4.5

T = 25°C

Instantaneous On-state Current (A)

Instantaneous On-state Voltage (V)

T = 125°C

50RIA Series

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6Revision: 19-Sep-08

50RIA Series

Vishay High Power Products Medium Power Thyristors

(Stud Version), 50 A

Fig. 8 - Thermal Impedance ZthJC Characteristics

Fig. 9 - Gate Characteristics

ORDERING INFORMATION TABLE

0.01

0.1

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

thJ-hs

Steady State Value

R = 0.35 K/W

thJ-hs

Transient Thermal Impedance Z (K/W)

50RIA Series

0.1

100

0.001 0.01 0.1 1 10 100 1000

VGD

IGD

(b) (a)

Tj=25 °C

Tj=-40 °C

(1) (2)

Instantaneous Gate Current (A)

Instantaneous Gate Voltage (V)

a) Recommended load line for

b) Recommended load line for

tr<=1 µs

Rectangular gate pulse

rated di/dt : 20V, 30 ohms; tr<=0.5 µs

<=30% rated di/dt : 20V, 65 ohms

(1) PGM = 10W, tp = 5ms

(2) PGM = 20W, tp = 2.5ms

(3) PGM = 50W, tp = 1ms

(4) PGM = 100W, tp = 500µs

(3) (4)

Tj=125 °C

50RIA Series Frequency Limited by PG(AV)

1- Current code

2- Essential part number

3- Voltage code x 10 = VRRM (see Voltage Ratings table)

5-None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2

M = Stud base TO-208AC (TO-65) M6 x 1

- Critical dV/dt:

None = 500 V/µs (standard value)

S90 = 1000 V/µs (special selection)

Device code

51324

50 RIA 120 S90 M

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95334

Document Number: 95334 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 08-Jul-08 1

TO-208AC (TO-65)

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

5.1/7.6

(0.2/0.3)

Ø 4.1 (Ø 0.16)

Ø 1.5 (Ø 0.06)

3 MIN.

(0.118 MIN.)

2.5/3.6

(0.1/0.14)

Ø 15 (Ø 0.59)

1/4"-28UNF-2A

for metric device M6 x 1

1.7/1.8

(0.06/0.07)

2.7 (0.106)

31 MAX.

(1.22 MAX.)

Ø 19.2 (Ø 0.75)

10.7/11.5

(0.42/0.46)

22.4 MAX.

(0.88 MAX.)

14.5 MAX.

(0.57 MAX.)

Across flats

17.2/17.35

(0.67/0.68)

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Revision: 12-Mar-12 1Document Number: 91000

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