DMT32M5LFG Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS Features and Benefits ID Max TC = +25C RDS(ON) Max Low RDS(ON) - Ensures On-State Losses are Minimized Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converts Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product 100% UIS (Avalanche) Rated Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) 1.7m @ VGS = 10V 100A 2.8m @ VGS = 4.5V 100A 30V Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Mechanical Data ideal for high efficiency power management applications. Applications Backlighting Power Management Functions DC-DC Converters (R) Case: PowerDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminal Finish - Matte Tin Annealed Over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) PowerDI3333-8 D Pin 1 S S S 1 8 2 7 3 6 4 5 G D D D G D Top View S Bottom View Equivalent Circuit Top View Ordering Information (Note 4) Part Number DMT32M5LFG-7 DMT32M5LFG-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. YYWW Marking Information SK2 SK2 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) PowerDI is a registered trademark of Diodes Incorporated. DMT32M5LFG Document number: DS39020 Rev. 4 - 2 1 of 7 www.diodes.com June 2017 (c) Diodes Incorporated DMT32M5LFG Maximum Ratings (@TC = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TC = +25C TC = +70C TA = +25C TA = +70C Continuous Drain Current (Note 6) VGS = 10V Continuous Drain Current (Note 5) VGS = 10V Value 30 20 100 100 ID Unit V V A IS IDM ISM IAS EAS 30 24 2.8 350 350 46.7 109 A A A A mJ Symbol PD RJA PD RJC TJ, TSTG Value 2.3 54 50 2.5 -55 to +150 Unit W C/W W C/W C ID Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) Pulsed Body Diode Forward Current (380s Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA = +25C TC = +25C Electrical Characteristics (@TJ = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS -- -- -- -- 1 10 V Zero Gate Voltage Drain Current IDSS 30 -- -- Gate-Source Leakage IGSS -- -- 10 A ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) RDS(ON) 1.4 1.4 2.1 3 1.7 2.8 V Static Drain-Source On-Resistance 1 -- -- -- 1.9 2.6 m VSD -- 0.7 1 V Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4066 1736 333 0.71 34 67.7 8 15 7.2 13.2 37.4 23.9 28.7 45.8 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Bodyy Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: A m Test Condition VGS = 0V, ID = 1mA VDS = 24V, VGS = 0V VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -16V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 20A VGS = 4.5V, ID = 15A VGS = 10V, ID = 20A, TJ = +125C (Note 8) VGS = 0V, IS = 2A pF VDS = 15V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 15V, ID = 20A ns VDD = 15V, VGS = 10V, RG = 3, ID = 20A ns nC IF = 15A, di/dt = 500A/s 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT32M5LFG Document number: DS39020 Rev. 4 - 2 2 of 7 www.diodes.com June 2017 (c) Diodes Incorporated DMT32M5LFG 30 50.0 25 VGS = 4.0V 40.0 VGS = 4.5V 35.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5.0V VGS = 3.5V 45.0 VGS = 10V 30.0 25.0 20.0 VGS = 3.0V 15.0 10.0 15 10 85oC 150oC 5 5.0 -55oC 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0 2 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 2. Typical Transfer Characteristic 10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m) 3.00 2.50 VGS = 4.5V 2.00 1.50 VGS =10V 1.00 0.50 8 ID = 20A 6 4 2 ID = 15A 0 0.00 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) 2 30 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage Figure 4. Typical Transfer Characteristic 3 2.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m) 25oC 125oC VGS = 2.5V 0.0 RD(SON), DRAIN-SOURCE ON-RESISTANCE (m) 20 VGS = 10V 2.5 150oC 175oC 2 125oC 1.5 85oC 25oC 1 oC oC -55 -55 0.5 0 2 1.8 VGS = 10V, ID = 20A 1.6 1.4 1.2 1 VGS = 4.5V, ID = 15A 0.8 0.6 0.4 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMT32M5LFG Document number: DS39020 Rev. 4 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Temperature June 2017 (c) Diodes Incorporated DMT32M5LFG 2.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m) 5 4.5 4 3.5 3 VGS = 4.5V, ID = 15A 2.5 2 1.5 1 VGS = 10V, ID = 20A 0.5 2 ID = 1mA 1.5 ID = 250A 1 0.5 0 0 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs. Junction Temperature 10000 30 CT, JUNCTION CAPACITANCE (pF) VGS = 0V IS, SOURCE CURRENT (A) 25 20 15 10 TA = 150oC TA = 125oC 5 TA = 25oC TA = 85oC Coss 1000 TA = -55oC 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Crss 100 0 0 f = 1MHz Ciss 0 1.2 10 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 1000 RDS(ON) Limited 8 PW = 100s 100 ID, DRAIN CURRENT (A) VGS (V) 30 6 4 VDS = 15V, ID = 20A 10 PW = 1ms PW = 10ms 1 PW = 1s 2 0.1 0 0.01 0 10 20 30 40 Qg (nC) 50 60 70 Figure 11. Gate Charge DMT32M5LFG Document number: DS39020 Rev. 4 - 2 PW = 100ms 4 of 7 www.diodes.com TJ(Max) = 150 TC = 25 Single Pulse DUT on 1*MRP Board VGS = 10V 0.01 PW = 10s DC 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure12. SOA, Safe Operation Area 100 June 2017 (c) Diodes Incorporated DMT32M5LFG 1 D=0.9 r(t), TRANSIENT THERMAL RESISTANCE D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 0.01 D=0.02 D=0.01 RJA (t) = r(t) * RJA RJA = 53/W Duty Cycle, D = t1/t2 D=0.005 D=Single Pulse 0.001 0.0001 DMT32M5LFG Document number: DS39020 Rev. 4 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 June 2017 (c) Diodes Incorporated DMT32M5LFG Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 A3 A1 A Seating Plane D L(4x) D2 1 Pin #1 ID E4 b2(4x) E E3 E2 L1(3x) 8 z(4x) PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm b e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X3 8 Y2 X2 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 Y4 X1 Y1 Y3 Y 1 X DMT32M5LFG Document number: DS39020 Rev. 4 - 2 C 6 of 7 www.diodes.com June 2017 (c) Diodes Incorporated DMT32M5LFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2017, Diodes Incorporated www.diodes.com DMT32M5LFG Document number: DS39020 Rev. 4 - 2 7 of 7 www.diodes.com June 2017 (c) Diodes Incorporated