TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/511
T4-LDS-0150 Rev. 2 (101161) Page 1 of 5
DEVICES LEVELS
2N4261 2N4261UB JAN
2N4261UBC * JANTX
JANTXV
* Available for JANS only JANS
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage VCEO 15 Vdc
Collector-Base Voltage VCBO 15 Vdc
Emitter-Base Voltage VEBO 4.5 Vdc
Collector Current IC 30 mAdc
Total Power Dissipation @ TA = +25°C PT
0.2 W
Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 °C
Note: Consult 19500/511 for Thermal Performance Curves.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc V(BR)CEO 15 Vdc
Collector-Base Cutoff Current
VCB = 15Vdc ICBO 10 μAdc
Emitter-Base Cutoff Current
VEB = 4.5Vdc IEBO 10 μAdc
Collector-Emitter Cutoff Current
VCE = 10Vdc, VBE = 0.4Vdc ICEX1 50 ηAdc
Collector-Emitter Cutoff Current
VCE = 10Vdc, VBE = 2.0Vdc ICEX2 5 ηAdc
TO-72
2N4261
3 PIN
2N4261UB
2N4261UBC
(UBC = Ceramic Lid Version)