A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS T
C
= 25 OC NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVDSS ID = 40 mA VGS = 0 V 125 V
IDSS VDS = 50 V VGS = 0 V 5.0 mA
IGSS VDS = 0 V VGS = 30 V 1.0 µ
µµ
µA
VGS VGS = VDS IDS = 300 mA 1.0 7.0 V
gM VDS = 10 V VGS = 5.0 V 5.5 Mho
RDSON VGS = 20 V IDS = 6.0 A 0.30 Ω
ΩΩ
Ω
IDSAT VGS = 20 V VDS = 10 V 35 A
Ciss
Coss
Crss VDS = 50 V VGS = 0 V f = 1.0 MHz 400
200
15
pF
PGS
η
ηη
η
ψ
ψψ
ψ VDS = 50 V IDQ = 0.8 A f = 225 MHz 14
50
20:1
dB
%
---
POWER MOSFET
N-Channel Enhancement Mode
BLF378
PACKAGE STYLE .400 BAL FLG(D)
1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE
DESCRIPTION:
The ASI BLF378 is a N-Channel
Enhancement-Mode RF Power
MOSFET Designed for broadband RF
Applications up to 225 MHz.
FEATURES INCLUDE:
• PG = 14 dB Min. at 225 MHz
• 20:1 Load VSWR Capabilit y
• Omnigold™ metalization system
MAXIMUM RATINGS
ID 18 A
VDSS 125 V
VGS 20 V
PDISS 500 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 0.35 °C/W
