MIL-M-38510/319C
14 July 2003 _
SUPERSEDING
MIL-M-38510/319B
4 March 1985
MILITARY SPECIFICATION
MICROCIRCUITS, DIGITAL, LOW-POWER SCHOTTKY TTL, 4 BY 4
REGISTER FILE, CASCADABLE, MONOLITHIC SILICON
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the detail requirements for monolithic silicon, Schottky TTL, low-power, 4 by
4 register file microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are
provided for each type and are reflected in the complete part number. For this product, the requireme nts of M IL-M-
38510 have been superseded by MIL-PRF-38535, (see 6.3).
1.2 Part number. The part number should be in accordance with MIL-PRF-38535, and as specified herein.
1.2.1 Device types. The device types should be as follows:
Device type Circuit
01 4 by 4 register file with 3-state outputs, cascadable
02 4 by 4 register file with open collector outputs, cascadable
1.2.2 Device class. The device class should be the product assurance level as defined in MIL-PRF-38535.
1.2.3 Case outlines. The case outlines should be as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style
E GDIP1-T16 or CDIP2-T16 16 Dual-in-line
F GDFP2-F16 or CDFP3-F16 16 Flat pack
2 CQCC1-N 20 20 Square leadless chi p carrier
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN:
DSCC-VAS, P. O. Box 3990, Columbus, OH 43216-5000, by using the self addressed Standardization
Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A FSC 5962
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH
-
POUND
Inactive for new design after 18 April 1997.
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1.3 Absolute maximum ratings.
Supply voltage range ............................................................................. -0.5 V dc to 7.0 V dc
Input voltage range ................................................................................ -1.5 V at -18 mA to 5.5 V
Storage temperatur e range .................................................................... -65° to +150°C
Maximum power dissipation (PD) 1/
Device type 01 ................................................................................. 275 mW
Device type 02 ................................................................................. 220 mW
Lead temperature (solderin g, 10 seco nds) ............................................. 300°C
Thermal resistance, junction to case (θJC):
Cases E, F, and 2 ................................................................................ (See MIL-STD-1835)
Junction temperature (TJ) 2/................................................................... +175°C
1.4 Recommended operating conditions.
Supply voltage (VCC) .............................................................................. 4.5 V minimum to 5.5 V maximum
Minimum high level input voltage (VIH) ................................................... 2.0 V
Maximum low level input voltage (VIL) .................................................... 0.7 V
Case operating temperature range (TC) ................................................. -55°C to +125°C
Minimum width of write enable or read enable pulse ............................. 25 ns
Minimum setup time (data) ..................................................................... 10 ns
Minimum setup time (write select) .......................................................... 15 ns
Minimum hold time (data) ....................................................................... 15 ns (with respect to GW)
Minimum hold time (write select) ............................................................ 5 ns
Minimum latch time for new data ............................................................ 25 ns
2. APPLICABLE DOCUMENTS
2.1 Government documents.
2.1.1 Specifications and Standards. The following specifications and standards form a part of this specification to the
extent specified herein. Unless otherwise specified, the issues of these documents shall be those listed in the issue of
the Departments of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 - Test Method Standard for Microelectronics.
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines
(Unless otherwise indicated, copies of the above specifications and standards are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and
regulations unless a specific exemption has been obtained.
_______
1/ Must withstand the added PD due to short-circuit test (e.g., IOS).
2/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening
conditions in accordance with MIL-PRF-38535.
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3. REQUIREMENTS
3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract
award (see 4.3 and 6.4).
3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as
specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM
plan shall not affect the form, fit, or function as described herein.
3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as
specified in MIL-PRF-38535 and herein.
3.3.1 Terminal connections. The terminal connections shall be as specified on figure 1.
3.3.2 Truth table. The truth table shall be as specified on figure 2.
3.3.3 Logic diagram. The logic diagram shall be as specified on figure 3.
3.3.4 Schematic circuits. The schematic circuits shall be maintained by the manufa cturer and made av aila ble to the
qualifying activity and the preparing activity upon request.
3.3.5 Case outlines. The case outlines shall be as specified in 1.2.3.
3.4 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6).
3.5 Electrical performance characteristics. The electrical performance characteristics are as specified in table I, and
apply over the full recommended case operating temperature range, unless otherwise specified.
3.6 Electrical test requirements. The electrical test requirements for each device class shall be the subgroups
specified in table II. The electrical tests for each subgroup are described in table III.
3.7 Marking. Marking shall be in accordance with MIL-PRF-38535.
3.8 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number 12
(see MIL-PRF-38535, appendix A).
4. VERIFICATION
4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as
modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not effect
the form, fit, or function as described herein.
4.2 Screening. Screening shall be in accordance with, MIL-PRF-38535 and shall be conducted on all devices prior to
qualification and quality conformance inspection. The following additional criteria shall apply:
a. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified
in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be
maintained under document control by the device manufacturer's Technology Review Board (TRB) in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon
request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in
accordance with the intent specified in test method 1015 of MIL-STD-883.
b. Interim and final electrical test parameters shall be as specified in table II, except interim electrical parameters
test prior to burn-in is optional at the discretion of the manufacturer.
c. Additional screening for space level product shall be as specified in MIL-PRF-38535, appendix B.
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TABLE I. Electrical performance characteristics.
Test Symbol Conditions Device Limits Unit
-55°C ≤ TC ≤ +125°C type Min Max
High level output voltage VOH V
CC = 4.5 V, VIN = 2.0 V 01 2.4 V
IOH = -1 mA
Collector cutoff current ICEX V
CC = 4.5 V, VOH = 5.5 V 02 20 µA
Low level output voltage VOL V
CC = 4.5 V, VIN = 0.7 V 01, 02 0.4 V
I
OL = 4 mA
Input clamp voltage VI C V
CC = 4.5 V, IIN = -18 mA, 01, 02 -1.5 V
TC = +25°C
High level input current IIH1 V
CC = 5.5 V, VIN = 2.7 V 01, 02 20 µA
all inputs except GR and
GW
High level input current IIH2 V
CC = 5.5 V, VIN = 2.7 V 01 60 µA
at GR 02 40
High level input current IIH3 V
CC = 5.5 V, VIN = 2.7 V 01, 02 40 µA
at GW
High level input current IIH4 V
CC = 5.5 V, VIN = 5.5 V 01, 02 100 µA
all inputs except GR and
GW
High level input current IIH5 V
CC = 5.5 V, VIN = 5.5 V 01 300 µA
at GR 02 200
High level input current IIH6 V
CC = 5.5 V, VIN = 5.5 V 01, 02 200 µA
at GW
Off state output current, IOZH V
CC = 5.5 V, VO = 2.7 V 01 20 µA
high level voltage applied
Off state output current: IOZL V
CC = 5.5 V, VO = 0.4 V 01 -20 µA
low level voltage applied
Low level input current at IIL1 V
CC = 5.5 V, VIN = 0.4 V 01, 02 -0.5 -460 µA
data, read select, and
write select
Low level input current at IIL2 V
CC = 5.5 V, VIN = 0.4 V 01 -90 -1300 µA
read enable 02 -90 -900
Low level input current at IIL3 V
CC = 5.5 V, VIN = 0.4 V 01, 02 -60 -840 µA
write enable
Short circuit output current IOS V
CC = 5.5 V 1/ 01 -15 -130 mA
Supply current ICC V
CC = 5.5 V 01 50 mA
02 40
See footnote at end of table.
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TABLE I. Electrical performance characteristics - Cont inued.
Test Symbol Conditions Device Limits Unit
-55°C ≤ TC ≤ +125°C type Min Max
Propagation delay time, tPLH1 VCC = 5.0 V, CL = 50 pF ±10%, 01 2 65 ns
low to high level from data RL = 316 Ω ±5% for device type 01, 02 2 65
Propagation delay time, tPLH2 RL = 2 kΩ ±5% for device type 02 01 2 58 ns
low to high level from read
select 02 2 58
Propagation delay time, tPHL1 01 2 58 ns
high to low level from data 02 2 52
Propagation delay time, tPHL2 01 2 65 ns
low to high level from read
select 02 2 58
Propagation delay time, tPLH3 01 2 65 ns
low to high level from write
enable 02 2 65
Propagation delay time, tPLH4 02 2 46 ns
low to high level from read
enable
Propagation delay time, tPHL3 01 2 72 ns
high to low level from write
enable 02 2 58
Propagation delay time, tPHL4 02 2 46 ns
high to low level from read
enable
Output enable time to low tPZL 01 2 58 ns
level
Output enable time to high tPZH 01 2 52 ns
level
Output disable time to low tPLZ 01 2 52 ns
level
Output disable time to high tPHZ 01 2 72 ns
level
1/ Not more than one output should be shorted at one time.
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TABLE II. Electrical test requirements.
Subgroups (see table III)
MIL-PRF-38535
test requirements Class S
devices Class B
devices
Interim electrical parameters
1 1
Final electrical test parameters
1*, 2, 3, 7, 9,
10, 11 1*, 2, 3, 7, 9
Group A test requirements
1, 2, 3, 7, 8,
9, 10, 11 1, 2, 3, 7, 8,
9, 10, 11
Group B electrical test parameters
when using method 5005 QCI option 1, 2, 3, 7, 8
9, 10, 11 N/A
Group C end-point electrical parameters 1, 2, 3, 7, 8
9, 10, 11 1, 2, 3
Group D end-point electrical parameters
1, 2, 3 1, 2, 3
*PDA applies to subgroup 1.
4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535.
4.4 Technology Conformance Inspection (TCI). Technology conformance inspection shall be in accordance with MIL-
PRF-38535 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4).
4.4.1 Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows:
a. T ests shal l be as specif ied in table II herein.
b. Subgroups 4, 5, and 6 shall be omitted.
4.4.2 Group B inspection. Group B inspection shall be in accordance with table II MIL-PRF-38535.
4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as follows:
a. End-point electrical parameters shall be as specif ied in t able II herein.
b. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as
specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit
shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon
request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in
accordance with the intent specified in test method 1005 of MIL-STD-883.
4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End-point
electrical parameters shall be as specified in table II herein.
4.5 Methods of inspection. Methods of inspection shall be specified and as follows:
4.5.1 Voltage and current. All voltages given are referenced to the microcircuit ground terminal. Currents given are
conventional and positive when flowing into the referenced terminal.
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Pin identification
Device types 01 and 02
Pin
number Case 2 Case E, F
1 NC Data D2
2 Data D2 Data D3
3 Data D3 Data D4
4 Data D4 Read Select RB
5 Read Select RB Read Select RA
6 NC Output Q4
7 Read Select RA Output Q3
8 Output Q4 GND
9 Output Q3 Output Q2
10 GND Output Q1
11 NC Read Enable GR
12 Output Q2 Write Enable GW
13 Output Q1 Write Select WB
14 Read Enable GR Write Select WA
15 Write Enable GW Data D1
16 NC VCC
17 Write Select WB
18 Write Select WA
19 Data D1
20 VCC
FIGURE 1. Terminal connections.
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Device type 01
Write function table (see notes A, B, and C) Read function table (see notes A and D)
Write inputs Word Read inputs Outputs
WB WA GW Q 1 2 3 RB RA GR Q1 Q2 Q3 Q4
L L L Q = D Q0 Q
0 Q
0 L L L W0B1 W0B2 W0B3 W0B4
L H L Q0 Q = D Q0 Q
0 L H L W1B1 W1B2 W1B3 W1B4
H L L Q0 Q
0 Q = D
Q0 H L L W2B1 W2B2 W2B3 W2B4
H H L Q0 Q
0 Q
0 Q = D
H H L W3B1 W3B2 W3B3 W3B4
X X H Q0 Q
0 Q
0 Q
0 X X H Z Z Z Z
NOTES:
A. H = high level, L = low level, X = irrelevant, Z = high impedance (off)
B. (Q = D) - The four selected internal flip-flop outputs will assume the states applied to the four external data
inputs.
C. Q0 = the level of Q before the indicated input conditions were established.
D. W0B1 = The first bit of word 0, etc.
Device type 02
Write function table (see notes A, B, and C) Read function table (see notes A and D)
Write inputs Word Read inputs Outputs
WB WA GW Q 1 2 3 RB RA GR Q1 Q2 Q3 Q4
L L L Q = D Q0 Q
0 Q
0 L L L W0B1 W0B2 W0B3 W0B4
L H L Q0 Q = D Q0 Q
0 L H L W1B1 W1B2 W1B3 W1B4
H L L Q0 Q
0 Q = D
Q0 H L L W2B1 W2B2 W2B3 W2B4
H H L Q0 Q
0 Q
0 Q = D
H H L W3B1 W3B2 W3B3 W3B4
X X H Q0 Q
0 Q
0 Q
0 X X H H H H H
NOTES:
A. H = high level, L = low level, X = irrelevant
B. (Q = D) - The four selected internal flip-flop outputs will assume the states applied to the four external data
inputs.
C. Q0 = the level of Q before the indicated input conditions were established.
D. W0B1 = The first bit of word 0, etc.
FIGURE 2. Truth tables.
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FIGURE 3 Logic diagram.
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FIGURE 3 Logic diagram - Continued.
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NOTES:
1. Input pulse char act eris tic s: PRR ≤ 1.0 MHz, tr ≤ 15 ns, tf ≤ 6 ns, duty cycle = 50% ±15%.
2. CL = 50 pF ±10%. CL includes probe and jig capacitance.
3. All diodes are 1N3064 and 1N916.
4. Load circuits on a given output are required only where the specific test given in table III indicates "OUT"
on that output. Load circuits may otherwise be omitted.
FIGURE 4. Switching test circuit and waveforms for device types 01 and 02.
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FIGURE 4. Switching test circuit and waveforms for device types 01 and 02 - Continued.
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5. PACKAGING
5.1 Packaging requirements. For acquisition purposes, the packaging requirements shall be as specified in the
contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these
personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements.
Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military
Department of Defense Agency, or within the Military Department's System Command. Packaging data retrieval is
available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM
products, or by contacting the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature which may be helpful, but is not
mandatory.)
6.1 Intended use. Microcircuits conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of the specification.
b. Complete part number (see 1.2).
c. Requirements for delivery of one copy of the quality conformance inspection data pertinent to the device
inspection lot to be supplied with each shipment by the device manufacturer, if applicable.
d. Requirements for certificate of compliance, if applicable.
e. Requirements for notification of change of product or process to contracting activity in addition to
notification to the qualifying activity, if applicable.
f. Requirements for failure analysis (including required test condition of method 5003 of MIL-STD-883),
corrective action, and reporting of results, if applicable.
g. Requirements for product assurance options.
h. Requirements for special carriers, lead lengths, or lead forming, if applicable. These requirements should
not affect the part number. Unless otherwise specified, these requirements will not apply to direct
purchase by or direct shipment to the Government.
j. Requirements for "JAN" marking.
6.3 Superseding information. The requirements of MIL-M-38510 have been superseded to take advantage of the
available Qualified Manufacturer Listing (QML) system provided by MIL-PRF-38535. Previous references to MIL-M-
38510 in this document have been replaced by appropriate references to MIL-PRF-38535. All technical requirements
now consist of this specification and MIL-PRF-38535. The MIL-M-38510 specification sheet number and PIN have
been retained to avoid adversely impacting existing government logistics systems and contractor's parts lists.
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List QML-38535 whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government test ed for quali fic ation in order that they may be eligible to be awarded contracts or purchase orders for
the products covered by this specification. Information pertaining to qualification of products may be obtained from
DSCC-VQ, 3990 E. Broad Street, Columbus, Ohio 43123-1199.
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6.5 Abbreviations, symbols, and definitions. The abbrev iatio ns, sy mbo ls, and defi nitions used herein are defined
in MIL-PRF-38535, MIL-HDBK-1331, and as follows:
GND ........................................... Ground zero voltage potential.
I
IN ................................................ Current flowing into an input terminal.
V
IC ............................................... Input clamp voltage.
V
IN ............................................... Voltage level at an inpu t termi nal.
I
OZL .............................................. Output current in the high impedance mode with the output voltage low.
I
OZH ............................................. Output current in the high impedance mode with the output voltage high.
t
PHZ .............................................. Output disable time from high level - The time between the specified
reference points on the input and output voltage waveforms with the three
state output changing from the defined high level to a high impedance
(off) state.
t
PLZ .............................................. Output disable time from low level - The time between the specified
reference points on the input and output voltage waveforms with the three
state output changing from the defined low level to a high impedance
(off) state.
t
PZH .............................................. Output enable time to high level - The time between the specified
reference points on the input and output voltage waveforms with the three
state output changing from a high impedance (off) state to the defined
high level.
t
PZL .............................................. Output enable time to low level - The time between the specified
reference points on the input and output voltage waveforms with the three
state output changing from a high impedance (off) state to the defined
low level.
6.6 Logistic support. Lead materials and finishes (see 3.4) are interchangeable. Unless otherwise specified,
microcircuits acquired for Government logistic support will be acquired to device class B (see 1.2.2), lead material
and finish A (see 3.4). Longer length leads and lead forming should not affect the part number.
6.7 Substitutability. The cross-reference information below is presented for the convenience of users.
Microcircuits covered by this specification will functionally replace the listed generic-industry type. Generic-industry
microcircuit types may not have equivalent operational perfor man ce chara cter istics across mil itary tempera ture
ranges or reliability factors equivalent to MIL-M-38510 device types and may have slight physical variations in relation
to case size. The presence of this information should not be deemed as permitting substitution of generic-industry
types for MIL-M-38510 types or as a waiver of any of the provisions of MIL-PRF-38535.
Military device
type Generic-industry
type
01 54LS670
02 54LS170
6.8 Manufacturers' designation. Manufacturers' circuits, which form a part of this specification, are designated
with an "X" as shown in table IV herein.
TABLE IV. Manufacturer's designator.
Manufacturer
Circuit A Circui t B Circuit C Circuit E Circuit F
Device
type Texas
Instruments Signetics
Corp. National
Semiconductor Fairchild
Semiconductor
Motorola
Inc.
01 X X X X X
02 X X X X X
6.9 Changes from previous issue. Asterisks are not used in this revision to identify changes with respect to the
previous issue due to the extensiveness of the changes.
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Custodians: Preparing activity:
Army - CR DLA - CC
Navy - EC
Air Force - 11 (Project 5962-1966)
DLA - CC
Review activities:
Army - MI, SM
Navy - AS, CG, MC, SH, TD
Air Force - 03, 19, 99
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STAND ARDIZATION DOCUMENT IM PROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activit y must complet e bl ocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7, and send to preparing activity.
3. The preparing activit y must provide a reply withi n 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarific ation of requirem ents on curren t contr acts.
Comments submitt ed on this form do not constit ute or imply authorizat i on to waive any portion of the referenced document(s) or to amend
contract ual requi rements.
I RECOMM E ND A CH ANGE:
1. DOCUMENT NUMBER
MIL-M-38510/319C 2. DOCUMENT DATE (YYYYMMDD)
2003-07-14
3. DOCUMENT TITLE
MICROCIRCUITS, DIGITAL, LOW-POWER SCHOTTKY TTL, 4 BY 4 REGISTER FILE, CASCADABLE, MONOLITHIC SILICON
4. NATURE OF CHANGE (Identify paragraph number and inc l ude proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATI O N
6. SUBMITTER
a. NAME (Last, First Middle Initial)
b. ORGANIZATION
c. ADDRESS (Incl ude Zip Code)
d. TELEPHONE (Include Area Code)
(1) Commercial
(2) DSN
(If applicabl e)
7. DATE SUBMITTED
(YYYYMMDD)
8. PREPAR ING ACTIVI TY
a. NAME
Defense Supply Center, Columbus
b. TELEPHONE (Include Area Code
(1) Commercial 614-692-0536 (2) DSN 850-0536
c. ADDRESS (Incl ude Zip Code)
DSCC-VA
P. O. Box 3990
Columbus, Ohio 43216-5000
IF YOU DO NOT RECEIVE A REPLY WIT HIN 45 DAYS , CONT ACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman Road, Suite 2533
Fort Belvoir, Virginia 22060-6221
Telephone (703)767-6888 DSN 427-6888
DD Form 1426, FEB 1999 (EG) PREVIOUS EDITIONS ARE OBSOLETE. WHS/DIOR, Feb 99
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