FAST SWITCHING PIN AND NIP DIODES ML 4000 SERIES The ML 4600 Series of PIN and NIP diodes are designed for control applications such as RF switching, limiting, duplexing, phase shifting, modulation and pulse forming. They are designed to provide two impedance states, one approaching an open circuit when reverse biased and the other a short circuit when forward biased. Optimised dc and RF parameters are obtained by employing high quality P on P+ and N on N+ epitaxial silicon and careful control of device processing. The complete range of diodes is achieved by optimisation of the diodes 'T' region width and junction area. SPECIFICATIONS @ +25c Minority Breakdown Forward Carrier Switching Thermal Voltage Capacitance Resistance Lifetime Time Resistance Standard Type Number (V) Cy. (pF) (Ohms) (us) (ns) (Crw) Case Min. Typ. Typ. Max. Typ. Max. Typ. Typ. Typ. Max. Style ML4603 35 - 0.15 0.20 15 1.7 150 15 - 500 54 ML4604 35 - 0.35 0.40 0.9 1.0 150 15 - 500 54 ML4605 35 - 1.10 1.20 0.7 0.8 150 15 - 500 54 ML4606 100 - 0.15 0.20 15 L7 350 35 - 500 54 ML4607 100 - 0.35 0.40 0.9 1.0 350 35 - 500 54 ML4608 100 - 1.10 1.20 0.7 0.8 350 35 - 500 54 ML4610 15 25 0.35 0.40 1.2 15 10 1 70 80 30 ML4611 40 60 0.30 0.35 1,3 15 20 2 60 70 30 ML4612 40 60 0.40 0.50 1.0 13 20 2 50 60 30 ML4614 70 90 0.30 0.35 1.3 LS 60 6 50 60 30 ML4615 70 90 0.40 0.50 1.0 13 60 6 40 50 30 ML4617 100 120 0.30 0.35 1.3 15 120 12 40 50 30 ML4618 L100 120 0.40 0.50 1.0 13 120 12 40 45 30 ML4619 100 120 0.50 0.60 0.8 1.0 120 12 35 40 30 ML4622 150 180 0.30 0.35 1.0 13 250 25 40 45 30 ML4623 150 180 0.40 0.50 0.8 1.0 250 25 35 40 30 ML4624 150 180 0.50 0.60 0.6 0.8 250 25 30 35 30 ML4627 200 250 0.30 0.35 1.0 13 400 40 35 40 30 ML4628 200 250 0.40 0.50 0.8 1.0 400 40 30 35 30 ML4629 200 250 0.50 0.60 0.6 0.8 400 40 25 30 30 NOTES 1. Breakdown Voltage measured at ], = 10uA. 2. Junction capacitance measured at f = 1MHz. 3. Minority carrier lifetime measured at ],= 1OmA. 4. Thermal resistance measurement is based on an infinite heat sink. 5. Forward bias series resistance measured at I, = 40mA and f = 3.3GHz. 6. The following types are available as NIP diodes, add suffix FP. 4610P, 4611P, 4612P, 4614P, 4615P, 4617P, 4618P, 4619P, 4622P, 4623P, 4624P, 4627P, 4628P,4629P. 7. Alternative case styles available on request. The above diodes are also available in chip form. 8. Storage/Operating Temperature Range 65C to +150C M/A-COM Ltd, Humphrys Road, Dunstable, Bedfordshire, LUS 4SX United Kingdom. North America: 800 366 2266 Europe: (44) 1344 869595 426 Asia Pacific: (81) 3 3226 1671