ES2A - ES2D
ES2A-ES2D, Rev. C2001 Fairchild Semiconductor Corporation
Fast Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Electrical Characteristics TA = 25°C unless otherwise noted
ES2A - ES2D
Features
• For surface mount applications.
•Glass passivated junction.
•Low profile package.
•Easy pick and place.
• Built-in strain relief.
•Superfast recovery times for
high efficiency.
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Device
Units
2A 2B 2C 2D
VF Forward Voltage @ 2.0 A 0.90 V
trr Reverse Recovery Time
I
F = 0.5 A, IR = 1.0 A, IRR = 0.25 A 20 ns
IR Reverse Current @ rated VR TA = 25°C
TA = 100°C 10
350 µA
µA
CT Total Capacitance
V
R = 4.0 V, f = 1.0 MHz 18 pF
Value
Symbol
Parameter 2A 2B 2C 2D
Units
VRRM Maximum Repetitive Reverse Volt age 50 100 150 200 V
IF(AV) Average Rectified Forward Current
.375 " lead length @ TA = 110°C 2.0 A
IFSM Non-repetiti ve Peak Forward Surge Current
8.3 ms Single H a lf-Sin e-Wave 50 A
Tstg Storage Temperature Range -55 to +150 °C
TJ Operating Junction Temperat ure -55 to +150 °C
Symbol
Parameter
Value
Units
PD Power Dissipation 1.66 W
RθJA Thermal Resistance, Junctio n to Ambient* 75 °C/W
RθJL Thermal Resistanc e, Junctio n to Lead* 20 °C/W
*Device mounted on FR-4 PCB 0.013 mm.
ES2A - ES2D
ES2A-ES2D, Rev. C
2001 Fairchild Semiconductor Corporation
Typical Characteristics
Pulse
Generator
(Note 2)
50Ω
NONINDUCTIVE 50Ω
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50Ω
NONINDUCTIVE
50V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+ 0 .5A
0
-0.25A
-1.0A
5/ 10 ns/ cm
0 20406080100120140
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [mA]
T = 25 C
º
A
T = 10 0 C
º
A
T = 75 C
º
A
0 25 50 75 100 125 150 175
0
0.5
1
1.5
2
2.5
Ambient Temperature [ºC]
Average Rectified Forward Current, IF [A]
SINGLE PHASE
HALF WAV E
60HZ
RESIS TI VE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENG T H S
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
0.01
0.1
1
10
50
Forward Voltage, VF [V]
Forward Current, IF [A]
Pulse Width = 300 µ
µµ
µs
2% Duty Cycle
T = 25 C
º
A
12 51020 50100
0
10
20
30
40
50
60
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
0.1 0.5 1 5 10 20 50 100 500
0
10
20
30
40
50
60
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
Figure 3. Non-Repetitive Surge Current Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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Advance Information
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No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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