©2002 Fairchild Semiconductor Corporation Rev. A, January 2002
BC516
TO-92
Absolute Maximum Ratings TA=25°C unless otherwise noted
Electrical Characteristics TA=25°C unless otherwise noted
NOTES:
1. Pulse Test Pulse Width 2%
2. fT = IhfeI · ftest
Thermal Charac teris tics TA=25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 10 V
ICCollector Current - Continuous 1 A
PDTotal Power Dissipation TA = 25°c625mW
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C
Symbol P arameter Test Condition Min. Typ . M ax. Units
VCEO Collector-Emitter Breakdown Volt age IC = 2mA, IB = 0 30 V
VCBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 40 V
VEBO Emitter-Base Breakdown Volt age IE = 10µA, IC = 0 10 V
ICBO Collect or Cutoff Current VCB = 30V, IE = 0 100 nA
hFE DC Current Gain IC = 20mA, VCE = 2V 30000
VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 0.1mA 1 V
VBE(on) Base-Emitter On Voltage IC = 10mA, VCE = 5V 1.4 V
fTCurrent Gain Bandwidth Product (2) IC = 10mA, VCE = 5V, f = 100MHz 200 MHz
Symbol Parameter Max. Units
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
BC516
PNP Darlington Transistor
This device is designed for applications reguiring extremely high
current gain at currents to 1mA.
Sourced from process 61.
1. Collector 2. Base 3. Emitter
1
Package Demensions
©2002 Fairchild Semiconductor Corporation Rev. A, January 2002
BC516
Dimensions in Millimeters
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
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As used herein:
©2002 Fairchild Semiconductor Corporation Rev. H4
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when properly used in accordance with instructions for use
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Design This datasheet contains the design specifications for
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Preliminary First Production This datasheet contains preliminary data, and
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