Numerical Index 2N3174-2N3261 ale MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS te) | REPLACE. | PAGE P |e] ty) |} Veg. |= tre @ Io Veesan @ Ie 2|/ |= NPE VETS | ment | numper | USE eff | By gen e| m |B) eB =| @ 25C) B] C | (volts) | (volts) |S | (min) (max) >| (volts) = 2 5/3 2N3174 |S{ P | 2N3790 7-147] HPA 75W)C}200} 100} 100;0] 12} 36] 1.OA} 0.75] 1,0A 10 }E | 1,0M|T 2N3175 | S| P | MJ2267 7-202] HPA 85W 1) C | 200 40 40}, 0] LO} 30] 2.04 1.0] 2.0A 10}E |] 1.OM}T 2N3176 | S| P | 2N3789 7-147| HPA 85W 1 C | 200 60 60/0] 10] 30] 2.0A 1.0] 2.0A 10}E |] 1.0M|T 2N3177 | S| P | 2N3790 7-147| HPA 85W | C | 200 80 80}0|{ 10{ 30] 2.0A 1.0} 2.0A 10 |E | 1.0M|T 2N3178 |S] P |] 2N3790 7-147} HPA 85w!lc]200} 100] 100}/0] 10] 30} 2.04 1.0] 2,04 10 |E | 1.0M]T 2N3179 S| P | MJ2267 7-202 | HPA 85w ] Cc | 200 40 40/0 10 30 2.0A 1.0 2,0A IO |E 1.0M | T 2N3180 S| P | 2N3789 7-147 | HPA 85W 1c | 200 60 60 | 0 10 30 2.0A 1.0 2.0A lO] E 1.0M|T 2N3181 | S| P | 2N3790 7-147 | HPA g5w]}c {200 80 80}0] 10] 30] 2,0A 1.0) 2.04 10} E} 1.0M|T 2N3182 S| P | 2N3790 7-147] HPA 85W | C | 200 100 100 } 0 10 30 2,0A 1.0 2,0A lO |E 10M | T 2N3183 S|] P | 2N3789 7-147| HPA 75W {C | 200 40 40/0 10 30 2,04 1.0 2,0A 10 | E 1.0M | T 2N3184 | S| P | 2N3789 7-147|{ HPA 75W 1 C | 200 60 60/0] 10] 30] 2,0A 1.0} 2,04 10 |}E 7] 1.0M]T 2N3185 |S] P | 2N3790 7-147 | HPA 75W | | 200 80 80 |o |] 10] 30] 2.0A 1.0] 2,04 10 |E | 1.0MIT 2N3186 S| P | 2N3790 7-147 | HPA 75W | C | 200 100 100 | 0 10 30 2.04 1.0 2,0A 10 |/E 1,0M]T 2N3187 S| P | MJ2267 7-202] HPA 85W | C | 200 40 40 | 0 10 30 3.0A 0.9 3.0A 10 | E 1,0M | T 2N3188 |S] P } 2N3789 7+147| HPA 85W | Cc | 200 60 60]O] 10] 30] 3.0A 0.9] 3.0A 10 |}E | 1.0M/T 2N3189 | S| P | 2N3790 7-147) HPA 85W | c | 200 80 80/0] lO] 30) 3.0A 0.9] 3.0A 10 |E | 1.0M]T 2N3190 | S| P | 2N3790 7-147] HPA 85w {Cc 200} 100] 1o0}0] 10] 30] 3.0A 0.9] 3.0A 10 7;E | L.OM/T 2N3191 |S} P HPA 85W | C } 200 40 40|0; 10} 30] 3.0A 0.9) 3.0A 10)E } 1.0M]T 2N3192 |S} P | 2N3789 7-147!) HPA 85W |} C | 200 60 60/0; 10] 30] 3.0A 0.9] 3.0A 10 |E | L.OM}T 2N3193 S|} P | 2N3790 7-147 | HPA 85W | C | 200 80 80/0 lo 30 3.0A 0.9 3.0A LOE 1.0M | T 2N3194 ) S| P } 2N3790 7-147) HRA 85W } Cc} 200} 100} 100)0) 10) 30) 3.0A 0.9} 3.04 10 )E ) 1.0M)T 2N3195 |S} P HPA 75wW | c | 200 40 40/0] 10] 30] 3.0A 0.9] 3,0A 1O}E | 1L.OM|T 2N3196 S| P | 2N3789 7-147] HPA 75W | C | 200 60 60 | 0 10 30 3.0A 0.9 3.0A 10 JE 1,0M | T 2N3197_ |. S| P | 2N3790 7-147 {| HPA 75W | C | 200 80 80 }O}] 10] 30] 3.0A 0.9 | 3.0A 10} E | 1.0M]T 2N3198 S| P | 2N3790 7-147 | HPA 75W | C | 200 100 100 | 0 10 30 3.04 0.9 3.04 10 | E 1.0M/|T 2N3199 S|P HPA 40W | C | 200 40 40 ]0 20 60 1.04 0.3 1,04 10 | E 1.0M|T 2N3200 |S] P | 2N3740 7-137 | HPA 40w | | 200 60 60 }O | 20] 60] 1.0A 0.3] 1,0A 10 ;E | 1.0M/T 2N3201 |S] P | 2N3741 7137] HPA 40W | C | 200 80 8010] 20] 60] 1.0A 0.3] 1.0A 10 /E } 1.OM|T 2N3202 1S 4)? HPA) 8.8W) C } 200 40 40}0}) 20) 60) 1L.0A 0.3) 1.04 10 )E ) 1.0M)T 2N3203 S| P | 2N3740 7-137] HPA 8.8W | C | 200 60 60 | 0 20 60 1,0A 0.3 1.04 10 |E 1.0M |T 2N3204 S| P | 2N3741 7-137) HPA 8.8W | C | 200 80 80 | 0 20 60 1.0A 0,3 1,0A IO | E 1.0M | T 2N3205 S|P HPA 40W | Cc | 200 40 40 |0 20 60 0.54 0.4 O.5A 10 |E 1.0M |T 2N3206 |S] P | 2N3740 7-137] HPA 40W | C | 200 60 60 ]0] 20] 60] 0.5A 0.4] O.5A 10 }E | L.OM{T 2N3207 S| P | 2N3741 7-137 | HPA 40W | Cc | 200 100 100 | 0 20 60 0.5A 0.4 0.5A 10 ]E 1.0M ]T 2N3208 |S | P | 2N3740 7-137] HPA | 8,8W | C | 200 40 40 ]0 |] 20) 60] 0.54 0.4] 0.5A 10/E | 1.0M/T 2N3209 |S | P | MM2894 8-328 | MSS | 0.36W | A | 200 20 20 |0 | 30 | 120 30M 0.2 30M 400M | T 2N3210 |S] N 8-196} HSS }] 0.36W } A ] 200 40 15 )}0 } 30) 120 10M) 0.75} 0.24 300M ) T 2N3211L S|N 8-198] HSS | 0.36W | A | 200 40 15 | 0 50 | 150 10M 0.2 10M 350M | T 2N3212 G]P LPA 14w | c | 110 100 80 | 0 30 90 3.0A 0.5 5,0A 3.0 ],E 2N3213 | G|P LPA 14w | c | 110 80 60/0} 30] 90] 3.0A 0.5] 5,0A ] 3.0 /E 2N3214 |G] P LPA 14w | c | 110 60 40 ]0] 30] 90} 3.04 0.5] 5.0A |] 3.0 ]E 2N3215 |G] P LPA 14Ww | c | 110 40 30 |0 |] 25; 100] 3.0A 0.5] 5.0A |] 3,0 ]E 2N3216 | G/ P MSS | 150M {A | 100 20 10/0 | 60 200M | 0,22 | 200M 10M | T 2N3217 Ss] P CHP 400M | A | 200 15 10 | 0 1.0M | T 2N3218 |s|P CHP | 400M | A 4200 25 20 |0 L.OM IT 2N3219 S]P CHP 400M | A | 200 40 35 |0 1.0M|T 2N3220 |S|N HFA | 6.0W |C |175 j 100 80 }0 | 20] 60] 1.0A 7] 1.25] 1.0A 20 |E 10M [| T 2N3221 jS|N HPA | 6.0W | C | 175 100} 80j;0 7 40/120] 1.0A |] 1.25] 1.0A 40 |E 10M | T 2N3222 S|N HPA 6.0W | c | 175 80 60 | 0 20 60 1.0A 1.25 1.0A 20 ]E 10M | T 2N3223 |S |N HPA | 6.0W]C | 175 80 60 |O | 40,120] 1.,0A | 1.25] 1,0A 40 /E 10M | T 2N3224 |S | P | 2N3498 8-232] VID] 0.7W {A {200} 100] 100/0 | 204 60 50M 20 |E 60M | T 2N3225 S| P | 2N3498 8-232 | VID 0.7W | A | 200 100 100 | 0 40 | 120 50M 40 |E 80M | T 2N3226 |S |N LPA 75W |C | 200 35 35 [0 4 201 50] 2.0A 1.2 | 2.74 20 |E 30K | E 2N3227 S|N 8-130 | HSS | 0,36W | A | 200 40 20 | 0 } LOO | 300 10M 0.25 10M 500M |T 2N3228 Thyristor, see Table on Page 1-154 2N3229 S|N HPA | 17.5W |C | 200 105 60 }O [5.0 2.58 1.0 2,5A 150M | T 2N3230 |S|N PHS 25W jc | 200 80 60 |]0 | 2K] 20K) 2.0A 1.4] 2.0A 40M | T 2N3231 |S ]N PHS 25W }C |200 | 100 80 ]}0 | 2K] 20K] 2.04 1.4] 2.0A 40M | T 2N3232 S|] N 7-106 | HPA 1l7w {Cc | 200 80 60 |0 13 55 3.0A 2.5 3.04 10 |E 1,.0M JE 2N3233 S|N HPA LL7wW } Cc | 200 110 100 | 0 18 55 3.0A 2.5 3.0A 10 JE 1.OM JE 2N3234 |S)N HPA |] 117W}C }200) 160 |} 160 )0]) 18) 55) 3.0A 2.5] 3.08 10 )}E ) 1.0My)E 2N3235 S|N 7-106) HPA 117W | Cc | 200 65 55 ]0 20 70 4.0A 1b 4,04 10 JE 1.0M |E 2N3236 S|N HPA 150W | C | 200 90 90 |0 17 60 5.0A 1.1 5.0A lO /E 1L.OM|E 2N3237 |S |N HPA | 200W | C | 200 90 75 }O 7 12] 36 10A 2.0 104 10 |E | L.OM|E 2N3238 S|N HPA 150W | c {200 80 80 | 0 [8.5 25 10A 3.0 104 10 |E 1.0M |E 2N3239 S|N HPA 150w | c | 200 80 80 |0 [8.5 25 10A 1.0 LOA 10 | E 1,0M/E 2N3240 S|]N HPA 150W | Cc | 200 160 160 | oO |8.5 25 LOA 1.0 LOA 10 /E 1.OM|E 2N3241 S|N LNA 0.5W A [175 30 2540 50 | 300 10M 7O|E 50M | T 2N3241A |S | N AFA 500M |A |175 30 25 10 L7I5 |E 100M | T 2N3242 S{N LNA 0.5W {A [175 30 25 10 75 10M 100 | E 50M /T 2N3242A |S |N AFA 500M |A [175 40 40/10 200 | E 100M | T 2N3244 |S 1P 8-200 | HSS | 1.0W JA {200 40 40 Jo | 50 {150 | 0.54 0.3 | 0.154 175M | T 2N3245 S|P 8-200} HSS 1.0W [A | 200 50 50/0 30 90 0.5A 0.35 | O.15A 150M | T 2N3246 |S|N LNA | 0.35W | A | 200 60 45 10 |200 | 600 10* 0.5 | 5,0M | 200 /E 60M | T 2N3247 S{N LNA | 0.15W | A 1150 60 45 | QO |200 | 600 10* 0.5 5.0M 200 | E 60M | T 2N3248 S|P 8-204 | HSS | 0.36W | A | 200 15 12 |90 50 | 150 O.1M |0.125 10M 250M | T 2N3249 S|P 8-204 | HSS | 0.36W [A | 200 15 12 |o | 100 | 300 O.1M |0.125 10M 300M | T 2N3250 s|P 8-208 | HSS | 0.36W ]A | 200 50 40 |0 50 | 150 10M 0.25 10M 50 JE 250M | T 2N3250A |S | P 8-208 | HSS | 0.36W [A | 200 60 60 |}O | 50 } 150 10M | 0.25 10M 50 |}E | 250M |T 2N3251 |s|P 8-208 | HSS | 0.36W | A | 200 50 40 70 | 100 | 300 10M | 0.25 10M | 100 /E | 300M;T 2N3251A {S| P 8+208 | HSS | 0.36W | A 1200 60 60 | O | 100 | 300 LOM 0,25 10M 100 |E 300M | T 2N3252 |SIN 8-214] Hss | 1.0W | A | 200 60 30/0 | 30] 90} 0.5A 0.3 | 0.15A 200M | T ou 383 s|N 8-214 | HSS | 1.0W jA | 200 75 40 |O } 25 | 75 | 375M | 0.35 | 0.15A 175M | T 2 thru Thyristors, see Table on Page 1-154 2N3259 2N3260 [SIN pMs | 200W |c 200 | 200 | 200 /0j; 10] 40 20A 1 20A 0.6M | T 2N3261 S|N HSS 0.3W {A [175 40 15 |0 40 | 150 10M 0.35 0.14 600M 1-137KX KX AANAR WN AN .MW\MWQ Q QA MAG ~ ANNALARA WS AAS WN WS WK QQ SS SX NS ANANAN WG WAAR! IQui'_'w y K\WYW MN NS SS ~ NS LL WH WL WS NS WAAAN WS Switching and General Purpose Transistors QUICK SELECTOR GUIDES SILICON HIGH-SPEED SWITCHING AND GENERAL PURPOSE TRANSISTORS The following two tables categorize the silicon devices included in this section into two classifications those intended for general-purpose switching and amplifier applications, and those recommended primarily for high-speed saturated switching purposes. Only the preferred devices those that merit first consideration for new designs are listed. In each table, the devices are grouped in voltage and current ranges. The voltage given is the minimum collector-emitter breakdown voltage (BVc RO): The current range columns represent operating current values for which optimum current gain (hpp) and/or collector-emitter satura- tion voltage (VoR(sat)) are specified in the data sheets. SATURATED SWITCHING TRANSISTORS (SILICON) Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcro Oto 10mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.08 LOAtO3.0A 3.0A to 5.0A Min Volts NPN PNP NPN. PNP NPN PNP NPN PNP NPN PNP NPN PNP o 2N3010 2N2894 2N2369A| 2N2894 2N3009 2N3303 2N3303 2N3493 | 2N3546 2N3009 | 2N3546 2N3013 MM709 | 2N4411 2N3010 2N3510 MM1748 2N3011 2N3511 2N3013 2N3647 2N3210 2N3648 19 2N3211 20 2N702 2N2501 2N24%6 2N703 2N3014 2N2477 | 2N3227 2N2501 2N3508 2N2847 29 2N3509 2N2848 30 2N2537 2N2537 2N3252 2N3734 2N2538 2N2538 2N3724 2N3736 2N2539 2N2539 2N3734 2N2540 2N2540 2N3736 2N2845 2N4013 2N2846 2N4046 2N3015 2N3724 2N4013 39 2N4046 40 2N3725 2N3725 | 2N3467 2N3253 | 2N3467 2N3444 | 2N3762 2N3506 2N4014 2N4014 | 2N3468 2N3444 | 2N3468 2N3735 | 2N3764 2N3507 2N4047 2N3725 | 2N3762 2N3737 2N3735 | 2N3764 2N3737 2N4014 59 2N4047 60 2N3763 2N3763 79 2N3765 2N3765 Switching and General Purpose Transistors INGLOZ , 2NSLIG (SILICON) (JAN2N3253 AVAILABLE) 2N3444 CASE 31 (TO-5) MAXIMUM RATINGS Collector connected to case Vero = 30-50 V Io =I1A f; = 175-200 MHz NPN silicon annular transistors for high-current saturated switching and core driver applications. Rating Symbol | 2N3252 |2N3253|2N3444} Unit Colector-Base Voltage Vop 60 vi) 80 Vde Collector-Emitter Voltage VCEO 30 40 50 Vde Emitter-Base Voltage Veg ____ 56 Vde Total Device Dissipation Pp 25C Case Temperature <5 Watts Derate above 25C _ 28.6_ mWw/C Total Device Dissipation Pp 25C Ambient Temperature DOO Watt Derate above 25C a SOOO mW/C Junction Operating Temperature Range Ty _ -65 to +200 _> C Storage Temperature Range Tote ~ - 65 to +200 _> C 93c 35 C/W Thermal Resistance: 934 0.175 C/mw SWITCHING CHARACTERISTICS Characteristic Symbol] Min | Max { Unit Output Capacitance Cop pF (Voz = 10 Vde, Ig = 0,f = 100 kHz) _ 12 Input Capacitance Ciy pF (Vpp = 0.5 Vde, Ip = 0, f = 100 kHz) _ 80 Current Gain-Bandwidth Product fp MHz (Ig = 50 mAdc, Ver = 10 Vdc, f = 100 MHz) 2N3252 200 _ 2N3253, 2N3444 175 Total Control Charge Qr nc (Ig = 500 mAde, Iq, = 50 mAdc, Voc = 30 V) _ 5 Delay Time Ig = 500 mAdc, ly = 50 mAdc tg _ 15 ns Rise Time Voc = 30 V, V; = 2V 2N3252 t _ 30 ns ce BE 2N3253, 2N3444 x 35 Storage Time I, = 500 mAdc, Ip1 = Ino = 50 mAdc ts _ 40 ns Fall Time Voc = 30V te _- 30 ns 8-214 Switching and General Purpose Transistors 2N3252, 2N3253, 2N3444 (continued) ELECTRICAL CHARACTERISTICS (At 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector Cutoff Current logo Adc (Vop= 40 Vde, Ip = 0) 2N3252 _ 0.50 (Vop= 40 Vdc, Iz = 0, Ty = 100C) 2N3252 75.0 (VcB = 60 Vdc, Ip = 0) 2N3253, 2N3444 0.50 (Vop= 60 Vde, Ip = 0, Ty, = 100C) 2N3253, 2N3444 75.0 Emitter Cutoff Current leBo uAdc (VBr = 4 Vdc, I = 0) _ 0.05 Collector Cutoff Current Icrx Adc (Voge = 40 Vde, Vapiogy= 4 Vdc) 2N3252 _ 0.5 (Veg = 60 Vdc, Veep(otf)= 4 Vdc) 2N3253, 2N3444, _ 0.5 Base Cutoff Current Ipp MAdc (Vog = 40 Vde, Venn) = 4 Vac) 2N3252 0.50 (Vog = 60 Vde, VEeR(off) 4 Vdc) 2N3253, 2N3444 _ 0.50 Collector-Base Breakdown Voltage BVcpo Vde (ic = 10 Adc, Ip = 0) 2N3252 60 _ 2N3253 1 _ 2N3444 80 _ Collector-Emitter Breakdown Voltage * BVoro* Vde (ie = 10 mAdc, pulsed, Ip = 0) 2N3252 30 _ 2N3253 40 _ 2N3444 50 Emitter-Base Breakdown Voltage BV Bo Vde (Ig = 10 wAdc, Ic = 0) 5 _ Colector Saturation Voltage * Ver ( sat) Vde (Ig = 150 mAdc, Ip = 15 mAdc) 2N3252 _ 0.3 2N3253, 2N3444 _ 0.35 (Ig = 500 mAdc, Ip = 50 mAdc) 2N3252 _ 0.5 2N3253, 2N3444 _ 0.60 (Ig = 1.0 Adc, Ig = 100 mAdc) 2N3252 _ 1.0 2N3253, 2N3444 _ 1.2 Base-Emitter Saturation Voltage * VEE (sat)* Vdc (I = 150 mAdc, Ip = 15 mAdc) _ 1.0 Ie = 500 mAdc, Ip = 50 mAdc) 0.7 1.3 (ig = 1.0 Adc, Ip = 100 mAdc) _ 1.8 DC Forward Current Transfer Ratio * hpp* _ (Ic = 150 mAde, Vopr?) Vdc) 2N3252 30 _ 2N3253 25 _ 2N3444 20 _ (Ic = 500 mAdc, Vor = 1 Vde) 2N3252 30 90 2N5253 25 15 2N3444 20 60 (ig = 1 Ade, Veg = 5 Vde) 2N3252 25 _ 2N3253 20 _ 2N3444 15 _ * Pulse Test: Pulse width = 300 ws, duty cycle = 2% 8-215 Switching and General Purpose Transistors 2N3252, 2N3253, 2N3444 (continued) COLLECTOR SATURATION VOLTAGE CHARACTERISTICS 2N3252 T, = 25C Ie = 100 mA le = 500 mA le = 750 mA MAXIMUM COLLECTOR SATURATION VOLTAGE (VOLTS) Vee 2 3 4 5 6 7 8 9 10 15 20 30 40 50 60 70 80 90 100 150 200 Ip, BASE CURRENT (mA) 2N3253 T, = 25C te = 100 mA ic = 250 mA le = 500 mA te = 750 mA MUM COLLECTOR SATURATION VOLTAGE (VOLTS) Voce, MAXI 2 3 4 5 6 7 8 9 10 15 20 30 40 50 60 70 8090100 150.200 I, BASE CURRENT (mA} 2N3444 T, = 25C Io = 100 mA fo = 250 mA Ic = 500 mA. te = 750 mA CTOR SATURATION VOLTAGE (VOLTS) Vee, MAXIMUM COLLE 2 3 4 5 6 7 8 9 10 15 20 30 40 50 60 70 80 90100 150200 Ia, BASE CURRENT (mA) 8-216t,, STORAGE TIME (ns) Switching and General Purpose Transistors 2N3252, 2N3253, 2N3444 (continued) MINIMUM CURRENT GAIN CHARACTERISTICS 700 800 900 1000 2N3253 VQ SV 70 T, = 125C 50 Ty = 26C z = 30 a T, = ~-15C & g = 20 Ty = 55C 3 = 5 = = = 2 10 i=l 7 5 50 60 70 80 90 100 200 300 400 500 600 Ig, COLLECTOR CURRENT (mA) = = oO =z a 2 & s 3 = =] = z = & 50 60 70 80 690 (100 200 300 400 500 600 tc, COLLECTOR CURRENT (mA) Ty = 125C Ty = 25C Ty = ~15C T, = 55C Hee, MINIMUM CURRENT GAIN 50 60 70 80 390 100 400 500 600 200 306 Ie, COLLECTOR CURRENT (mA) TYPICAL STORAGE TIME VARIATIONS 100 100 pr = 20 70 70 50 560 Zz a = 30 5 30 fr = 10 = i, = 1 a 20 feat, 1/8t, 20 eee 2568 125C 10 10 50 70 100 200 300 500 700 1000 60 70 100 200 300 te, COLLECTOR CURRENT (mA) 8-217 ~ ea Ve = 2V 700 800 900 1000 700 800 900 1000 TYPICAL FALL TIME VARIATIONS ta = tee Veo = 30 V 25C T. 125C T, 500 700 1000 Ic, COLLECTOR CURRENT (mA) Switching and General Purpose Transistors 2N3252, 2N3253, 2N3444 (continued) TIME (nsec) CAPACITANCE (pF) SATURATION VOLTAGE (VOLTS) TYPICAL TURN-ON TIME VARIATIONS WITH VOLTAGE TYPICAL RISE TIME VARIATIONS WITH TEMPERATURE Br = 10 T, = 26C Veo = 30V fe = 10 25C owe oe 125C t,, RISE TIME (nsec) =O0V ta@ Ve = 2V 50 70 100 200 300 500 700 1000 50 70 100 200 300 500 700 1000 ley COLLECTOR CURRENT (mA) Je, COLLECTOR CURRENT (mA) JUNCTION CAPACITANCE VARIATIONS MAXIMUM CHARGE DATA 10,000 Ty = 25C Vec == 30 V MAX 7000 le = 10 In -= TYP Ty = 25C 5000 3000 nn S 2 So 2N3252 CHARGE (pC} 1000 700 500 300 200 0.1 0.2 05 1.0 2.0 5.0 10 20 50 50 70 ~=:100 200 300 500 700 1000 REVERSE BIAS (VOLTS) le, COLLECTOR CURRENT (mA) LIMITS OF SATURATION VOLTAGES TYPICAL TEMPERATURE COEFFICIENTS Be = 10 5 Ty = 25C 25C T0 Ova for Veg 55C TO 25C MAX Ve (ret) MIN Vee sat) COEFFICIENT (m/C) MAX Vee (ut) 2N3253-2N3444 Oya for Veg MAX Vce taat} 50 70 100 200 300 500 700 1000 Qo 200 400 600 800 1000 Je, COLLECTOR CURRENT (mA) Ie, COLLECTOR CURRENT (mA) 8-218