BFR949T
Aug-09-20011
NPN Silicon RF Transistor
Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 9 GHz
F = 1.0 dB at 1 GHz
VPS05996
1
2
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR949T RKs 1 = B 2 = E 3 = C SC75
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 10 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 1.5
Collector current IC35 mA
Base current IB4
Total power dissipation
TS
75°C 1) Ptot 250 mW
Junction temperature Tj150 °C
Ambient temperature TA-65 ... 150
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point2) RthJS
300 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
BFR949T
Aug-09-20012
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 10 - - V
Base-emitter forward voltage
IE = 25mA VBEF - - 1.05
Collector-base cutoff current
VCB = 10 V, IE = 0 ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0 IEBO - - 0.1 µA
DC current gain
IC = 5 mA, VCE = 6 V hFE 100 140 200 -
BFR949T
Aug-09-20013
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 6 V, f = 1 GHz fT7 9 - GHz
Collector-base capacitance
VCB = 10 V, f = 1MHz Ccb - 0.33 0.4 pF
Collector-emitter capacitance
VCE = 10 V, f = 1MHz Cce - 0.2 -
Emitter-base capacitance
VEB = 0.5 V, f = 1MHz Ceb - 0.6 -
Noise figure
IC = 5 mA, VCE = 6 V, ZS = ZSopt ,
f = 1 GHz
IC = 3 mA, VCE = 8 V, ZS = ZSopt ,
f = 1.8 GHz
F
-
-
1
1.5
2.5
-
dB
Power gain, maximum stable 1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
Gms - 20 -
Power gain, maximum available 2)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
Gma - 14 -
Transducer gain
IC = 15 mA, VCE = 6 V, ZS = ZL = 50
,
f = 1 GHz
IC = 10 mA, VCE = 8 V, ZS = ZL = 50
,
f = 1.8 GHz
|S21e|2
13
-
16
11
-
-
1Gms = |S21 / S12|
2Gma = |S21 / S12| (k-(k2-1)1/2)
BFR949T
Aug-09-20014
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS = 4.36 fA
VAF = 30 V
NE = 1.998 -
VAR = 41.889 V
NC = 1.569 -
RBM = 0.823
CJE = 291 fF
TF = 8.77 ps
ITF = 1.336 mA
VJC = 1.048 V
TR = 1.39 ns
MJS = 0-
. -
NF = 1.085 -
ISE = 1.86 pA
NR = 1.095 -
ISC = 3.68 pA
IRB = 72.2 µA
RC = 0.849
MJE = 0.456 -
VTF = 0.198 V
CJC = 459 fF
XCJC = 0.217 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
BF = 120 -
IKF = 0.152 A
BR = 33.322 -
IKR = 0.063 A
RB = 20.766
RE = 0.101
VJE = 0.586 V
XTF = 0.00894 -
PTF = 0 deg
MJC = 0.334 -
CJS = 0fF
NK = 0.5 -
FC = 0.924 -
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
EHA07524
Transistor C’ L
E’
B’
3
4
C
C
Chip
E
L
1
5
C
B
2
L
C
6
C
1
C
2
C
3
L1 = 0.762 nH
L2 = 0.706 nH
L3 = 0.382 nH
C1 = 62 fF
C2 = 84 fF
C3 = 180 fF
C4 = 7fF
C5 = 40 fF
C6 = 48 fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM
or see Internet: http://www.infineon.com/silicondiscretes
BFR949T
Aug-09-20015
Total power dissipation Ptot = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
P
tot
Permissible Pulse Load RthJS = f (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
R
thJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
P
totmax
/ P
totDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BFR949T
Aug-09-20016
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0 5 10 15 V25
VCB
0
0.1
0.2
0.3
0.4
pF
0.6
C
cb
Transition frequency fT = f (IC)
VCE = Parameter
0 5 10 15 20 25 30 35 mA 45
IC
0
2
4
6
GHz
10
f
T
10V
8V
5V
3V
2V
1V
0.7V
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
0 5 10 15 20 25 30 35 mA 45
IC
7
10
13
16
dB
22
G
10V 8V
5V
3V
2V
1V
0.7V
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
0 5 10 15 20 25 30 35 mA 45
IC
0
4
8
dB
16
G
10V 8V
5V
3V
2V
1V
0.7V
BFR949T
Aug-09-20017
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
0 3 6 V12
VCE
0
5
10
15
dB
25
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
IC=10mA
Power Gain Gma, Gms = f(f)
VCE = Parameter
012345GHz 7
f
0
5
10
15
20
25
30
35
dB
45
G
10V5V
1V
IC=10mA
Power Gain |S21|2= f(f)
VCE = Parameter
012345GHz 7
f
0
5
10
15
20
dB
30
|S
21
|
2
10V
5V
1V
IC=10mA