MITSUBISHI TRANSISTOR MODULES QM50TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-24 * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 1020.5 6 14 6 14 6 17 4-5.5 7-M4 P U V N W 30 16.5 12 BuN EuN BvN EvN BwN EwN 10 BvP EuP EvP EwP BvN BwN EvN EwN BuN EuN N N U V W 8.5 17 N 24.5 P 30 740.25 P 910.5 BwPEwP 43 BvP EvP 27 BuP EuP P BwP BuP 2 20 20 800.25 22 11 Tab#110, t=0.5 LABEL 7 30+1.5 -0.5 29.5 8.1 22 Note: All Transistor Units are 3-Stage Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V Conditions 1200 V VCEX Collector-emitter voltage VEB=2V 1200 V VCBO Collector-base voltage Emitter open 1200 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 50 A -IC Collector reverse current DC (forward diode current) 50 A PC Collector dissipation TC=25C 400 W IB Base current DC 3 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 500 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Charged part to case, AC for 1 minute Main terminal screw M4 -- Mounting torque Mounting screw M5 -- Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 0.98~1.47 N*m 10~15 kg*cm 1.47~1.96 N*m 15~20 kg*cm 660 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1200V, VEB=2V -- -- 1.0 mA ICBO Collector cutoff current VCB=1200V, Emitter open -- -- 1.0 mA IEBO Emitter cutoff current VEB=7V -- -- 200 mA VCE (sat) Collector-emitter saturation voltage -- -- 3.0 V VBE (sat) Base-emitter saturation voltage -- -- 3.5 V -VCEO Collector-emitter reverse voltage -IC=50A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=50A, VCE=5V 75 -- -- -- -- -- 2.5 s Switching time VCC=600V, IC=50A, IB1=-IB2=1A -- -- 15 s -- -- 3.0 s Transistor part (per 1/6 module) -- -- 0.31 C/ W Diode part (per 1/6 module) -- -- 1.2 C/ W Conductive grease applied (1/6module) -- -- 0.2 C/ W IC=50A, IB=1A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) DC CURRENT GAIN hFE Tj=25C 80 IB=1.5A 60 IB=1.0A IB=0.5A IB=0.3A 40 IB=0.1A 20 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 0 7 5 4 3 2 2.0 2.4 2.8 3.2 BASE-EMITTER VOLTAGE 10 3 7 5 3 2 VCE=5.0V 10 2 7 5 3 2 3.6 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 2 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) 2 3 4 5 7 10 1 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) IC=30A IB=1A Tj=25C Tj=125C COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 3 IC=50A VCE(sat) 10-1 10 0 VBE (V) 5 IC=20A VBE(sat) 10 0 7 5 4 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 4 VCE=2.8V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=2.8V Tj=25C 10 -1 1.6 Tj=25C Tj=125C VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 4 7 5 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 100 10 2 7 5 3 2 ts VCC=600V IB1=-IB2=1A Tj=25C Tj=125C 10 1 7 5 3 2 tf 10 0 ton 7 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) SWITCHING TIME ts, tf (s) 2 10 1 7 5 4 3 2 160 ts COLLECTOR CURRENT IC (A) 3 REVERSE BIAS SAFE OPERATING AREA tf VCC=600V 10 0 IB1=1A IC=50A 7 Tj=25C 5 Tj=125C 4 3 10-1 2 3 4 5 7 10 0 120 100 80 BASE REVERSE CURRENT -IB2 (A) 40 20 VCE (V) 100 200S C 100S 10 1 7 5 TC=25C 3 NON-REPETITIVE 2 SECOND BREAKDOWN AREA 90 50S 10 0 7 5 3 2 DERATING FACTOR (%) D 1mS COLLECTOR CURRENT IC (A) 200 400 600 800 1000 1200 1400 1600 DERATING FACTOR OF F. B. S. O. A. 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 7 0.5 0.4 0.3 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 IB2=-1A 60 0 2 3 4 5 7 10 1 Tj=125C 140 10 2 7 5 4 3 2 TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 10 1 7 5 4 3 2 10 0 0.4 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 5 4 3 2 10 1 Tj=25C Tj=125C Irr Qrr 10 1 7 5 4 3 2 10 0 10 0 10 0 trr (s) 500 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) trr VCC=600V IB1=-IB2=1A 2 3 4 5 7 10 1 10 -1 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 2.0 1.8 Zth (j-c) (C/ W) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999