WESTCODE SEMICONDUCTORS 35E D MM 9709955 O00e4eS 6&6 BMBUVESB T- 2 S~Q) GY) WESTCODE @ SEMICONDUCTORS High Frequency Inverter Grade Capsule Thyristor Type R350C distributed amplified gate for high di/dt and low switching losses 965 amperes average: up to 1200 volts Vaan/Vorm Ratings (Maximum values at 125C Tj unless stated otherwise) Technical Publication TR350C Issue 2 December 1985 RATING CONDITIONS SYMBOL 55C heatsink temperature 965 A Average on-state current Half sine wave {double side cooled) hav) 85C heatsink temperature 298 A (single side cooled) R.M.S. on-state current 25C heatsink temperature, double side cooled triams} 2000 A Continuous on-state current 25C heatsink temperature, double side cooled 4 1510 A Peak one-cycle surge 10ms duration, 60% Vary te-applied hsm 17600 A (non-repetitive) on state current 10ms duration, Vas 10 volts brsm(2} 19400 A . i 10ms duration, Vax 10 volts 12t (2) 1880000 A?; Maximum permissible surge energy 3ms duration, Va< 10 volts Pt 13 Az Peak forward gate current Anode positive with respect to cathode leo 36A Peak forward gate voltage Anode positive with respect to cathode Veco 16V Peak reverse gate voltage Vrcm 5V Average gate power Pg 2W Peak gate power 100s. pulse width Pom 120 W Rate of rise of off-state voltage To 80% Vprm gate open-circuit dv/dt *200 V/us Rate of rise of on-state current di/dt (1) 1000 A/ps (repetitive) Gate drive 20 volts, 20 ohms with t, < 1s. Rate of rise of on-state current Anode voltage < 80% Vpan di/dt (2) 1500 A/us (non-repetitive) Operating temperature range Ths 40+ 125C Storage temperature range Tstg 40+ 150C Characteristics (Maximum values at 125C Tj unless stated otherwise) CHARACTERISTIC CONDITIONS SYMBOL Peak on-state voltage At 2000 A, lry Vim 2.18 V Forward conduction threshold voltage Vo 1.72V Forward conduction slope resistance r 0.23 mQ Repetitive peak off-state current At Vorm lpram 100 mA Repetitive peak reverse current At Vero lana 100 mA Maximum gate current required to fire all devices let 300 mA Maximum gate voltage required to fire all devices \ At 25C, V,=10V, |, =2A { Ver 3V Maximum holding current My 1A Maximum gate voltage which will not trigger any device Veo 0.25 V Stored charge lr, = 1000A, dir/dt 60A/us Vrut= =50V, 50% chord value Ore 130 nC Circuit commutated turn-off time m= 1000A 200V/us to 80% Voay} ta 2025 ys available down to dtiat= =60A/uS, Vay =50V) 20V/us to 80% Voam}| ta typical 15-20 ps Thermal resistance, junction to heat sink, Double side cooled Ri 0.032C /W for a device with a maximum forward volt Single side cooled hurhs} 0.064C /W drop characteristic VOLTAGE CODE HO2 H04 HO06 HO8 H10 H12 Repetitive peak voltages Varnm Voam Non-repetitive peak off-state voltage Vpsm 200 400 600 800 1000 1200 Non-repetitive peak reverse blocking voltage Vasm | 300 500 700 900 1100 1300 Ordering Information (Please quote device code as explained below) R 3 5 0 C e@e8 @ 0 dv/dt code to 80% Voam Turn-off time Fixed Voltage Code C=20V/us E = 100V/us J=25 us K=20 us type code (see ratings) D=50V/us F=200V/us L=15 us Typical code: R350CHO6FJO = 600 Varn 600 Vea 200 V/us dv/dt to 80% Vary 25 us turn-off *Other values of dv/dt up to 1000 V/us, and turn-off time may be available. / { 9000-3996WESTCODE SEMICONDUCTORS (a) (b) (c) (d) (e) (a) INTRODUCTION The R350C series of thyristors incorporates diffused silicon slices, 50 mm in diameter in cold- weld housings. Fast turn-on, with low turn-on loss is achieved by interdigitation of the cathode. NOTES ON THE RATINGS Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1500 A/us at any time during turn-on on a non-repetitive basis. For repetitive performance the on-state rate of rise of current must not exceed 1000 A/us at any time during turn-on. Note that these values of current rate of rise apply to the circuit external to the device and its specified snubber network and device current rates of rise will be higher. Square wave ratings These ratings are given for leading edge linear rates of rise of forward current of 100 and 500 A/us. Duty Cycle Lines The 100% duty cycle line appears on ail these ratings. These frequency ratings are presented in the form that all duty cycles may be represented by straight parallel lines. Maximum operating Frequency The maximum operating frequency, frax, is set by the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. 1 tpuse + tq + tv Energy per pulse characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let E, be the Energy per pulse for a given current and pulse width, in joules. Then Wayv=E, x f. REVERSE RECOVERY LOSS On account of the number of circuit variables affecting reverse recovery voltage, no allowance for reverse recovery loss has been made in these ratings. The following procedure is recommended for use where it is necessary to include reverse recovery loss. Determination by Measurement From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be A joules per pulse. A new heat sink temperature can then be evaluated from: max . 6 Tsink (new) = Tsink (original) A (2 + Rth x 7 where r,=4.1x 10-5/t t= duration of reverse recovery loss per pulse in microseconds A= Area under reverse loss waveform per pulse in joules (W.S.) f=rated frequency at the original heat sink temperature (b) (a) (b) 35E D MM 9709955 000242b T MBWESBT-AS-gy The total dissipation is now given by Witot) = Wiorigina) + A f Design Method In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses may be estimated from figure 7. A typical R-C snubber network is connected across the thyristor to control the transient reverse voltage waveform. Let E be the value of energy per reverse cycle in joules (figure 7). Let f be the operating frequency in Hz then Tsink new = Tsink original ERinxf where Tsinx new is the required maximum heat sink temperature and Tsink Original is the heat sink temperature given with the frequency ratings. GATE DRIVE The recommended gate drive is 20 V, 20 ohms with a short-circuit current rise time of not more than 1 ps. This gate drive must be applied when using the full di/dt capability of the device. THE DV/DT SUPPRESSION NETWORK The effect of a conventional resistor-capacitor snubber of 0.25 F 5 ohms has been included in these ratings and all rating di/dt values apply to the circuit external to the thyristor and its suppression network. Snubber Network Values A series connected C-R filter may be required across the anode to cathode terminals of the thyristor for the purpose of reducing off-state voltage overshoot. The optimum values for C and R depend partly on the circuits connected to the thyristor. For most applications the snubber design values should not exceed a maximum of 0.25 wF or a minimum of 5 ohms. Please consult Westcode for values outside these limits. NOTE 1 REVERSE RECOVERY LOSS BY MEASUREMENT This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge care must be taken to ensure that: a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. The measuring oscilloscope has adequate dynamic range typically 100 screen heights to cope with the initial forward current without overload.100 hs = 85 500 A/us uare wave 10 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 1 Frequency v. pulse width 100 Ths = 55C 500 A/us square 10 1 0.1 N x= w 3 Cc o 3 S = 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 3. Frequency v. pulse width 100 Ths = 85 100 A/us square wave 10 0.1 frequency, KHz 2 = 0.01 0.1 1 pulse width, m.secs Figure 2, Frequency v. pulse width 100 Ths = 100 A/us square wave 10 0.1 frequency, KHz 2S ran) = 0.01 0.1 1 pulse width, m.secs Figure 4 Frequency v. pulse width 10 10 35E D MM 9709955 0002427 1 MBWESB TS) WESTCODE SEMICONDUCTORSWE energy/pulse, joules energy per pulse, joules STCODE SEMICONDUCTORS 35E D MM 97059955 0002428 3 MHWESB 100 100 Tasa 10 10 1 1 2 j= 125C 3 Tj= 125C 500 A/us g 100 A/ps square wave 2 uare wave > Dm 2 0.1 o 0.1 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 5 Energy/pulse v. pulse Figure 6 Energy/pulse v. pulse width width 0.3 snubber connected 0.25 nF 5 Q peak reverse voltage Vay = 0.67 Varnm max. (804 volts) 0.2 0.1 0.09 0.07 0.05 0.04 0.03 0.02 20 30 40 50 70 90 100 200 commutating di/dt, A/ns Figure 7 Max. reverse recovery energy loss per pulse at 125C junction temperature and Vam = 804 volts.WESTCODE SEMICONDUCTORS 39E D WM 9709955 0002429 5 MBWESB T= 25"2) hs = 85 C sine 10 10 0.1 o 2 3 N 2 3 3 sine wave oO o > 2 o = 0.01 S 0.1 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 8 Frequency v. pulse width Figure 9 Energy/pulse v. pulse width 200 | 7 m Lory LT 4 Ths = 55C LAT Aer) 4 ne wave | ert | a] at LT | | LT | 1 L- a | 5 4 i IY 4 Lb 10 M | a LA L- 4 ET | eo 1 Ly Va Ut 1 | pa Ly LA Lp P47] 100 aGnElr LU 41 LY 4] 930 AA va 1 LA 1 4 Ly pL) a ly PH 80 V7 7 +O y a 5 H a E 7 0.1 60 aa at o Va La] N & x 5 4 = 50 ~ | g 8 | = 0.01 2 40 LY 0.01 0.1 1 10 20 30 40 50 100 200 pulse width, m.secs commutating di/dt, A/ys Figure 10 Frequency v. pulse Figure 11 Maximum recovered width charge at 125C junction temperature \ \\WESTCODE SEMICONDUCTORS 359E D M@m@ 9709955 O00e430 1 MBUESB 2 0.1 9 100 = 107 - 0.05 2 ~IC- 8 5 TasAl o ~ 8 : 5 2 a 3 n E oot 2 8 a FE , 3 3 10 108 E $ 0.008 3 & 5 3 5 2 . E Ss x 0.001 31 ow 2 0.001 0.01 0.1 1 10 1 10105 5 50 100 time, seconds m.secs cycles at 50 Hz ) * . . duration of surge . Figure 12 Junction to heatsink Figure 13. Max. non-repetitive surge current transient thermal at initial junction temperature 125C impedance (gate may temporarily lose control of firing angle) Note: This rating must not be interpreted as an intermittent rating 18 16 Veg pk. max. (lq tr= 4 14 g d.c. max. 12 23 : 10 $ a Pg max. (pulse) 3 2 5 3 120 W > 2 - = g 3 > 6 4 g 8 4 S$ 8 lie within these curves 2 r $ 2 | tov deter of Pg max. d.c.=2 20 2 toes Ly 0 200 400 600 9, 0 gate current, fc, milliamperes 01 0305 1 3 5 10 30 50 Figure 15 Gate triggering gate current, Ig, amperes characteristics. Figure 14 Gate characteristics at Trigger points of all thyristors lie within the ) areas shown Gate drive load line must lie On: . 25C junction temperature outside appropriate Ig/Vg rectangle 10000 5000 dimensions in mm (inches) Mounting force: 1900-2600 kgf n o E = 1000 Weight: 510 grams 2 @ 74129) 5 500 waGHt ~ 2 6 . 3 [ a& 100 1 015106 16.20 24 228 08 AC | FOR AMP REC. on-state voltage, volts ates a No S059) Figure 16 Limit on-state characteristic 2 2 HOLES TO 200AC In the interest of product improvement, Westcode reserves the right to change specifications at any time without notice WESTCODE SEMICONDUCTORS LTD P.O. Box 57 Chippenham Wiltshire SN15 1JL England Telephone Chippenham (0249) 654141 Telex 44751 CH HAWKER SIDDELEY Westinghouse Br2ke and Signal Co. Ltd. U. Printed by the Pheon Press, Gristol 2M1285 Ne